PHYSICS 2005

Q. 1. An electric dipole of dipole moment 20, X 10

-6
C.m is enclosed by a closed surface. What is
the net flux comin out of the surface! 1
Q. 2. An electron beam pro"ected alon #X-axis, experiences a force due to a manetic field alon
the #$-axis. What is the direction of the manetic field! 1
Q. 3. %he po&er factor of an a.c. circuit is 0.'. What &ill be the phase difference bet&een (oltae
and current in this circuit! 1
Q. 4. )lectrons are emitted from a photosensiti(e surface &hen it is illuminated by reen liht but
electron emission does not ta*e place by yello& liht. Will the electrons be emitted &hen the
surface is illuminated by +i, red liht, and +ii, blue liht. 1
Q. 5. What should be the lenth of the dipole antenna for a carrier &a(e of -re.u- ency / X 10
1
23! 1
Q. 6. 4efine 5electric line of force5 and i(e its t&o important properties. 2
Q. 7. +a, Why does the electric field inside a dielectric decrease &hen it is placed in an external
electric field!
+b, A parallel plate capacitor &ith air bet&een the plates has a capacitance of 1 p-. What &ill be the
capacitance if the distance bet&een the plates he reduced by half and the space bet&een them is
filled &ith a substance of dielectric constant 676! 2
Or
are *ept at the (ertices, A, 8 and C respecti(ely of
an e.uilateral trianle of side 20 cm as sho&n in the fiure. What should be the sin and manitude
of the chare to be placed at the mid-point +9, of side 8C so that the chare at A remains in
e.uilibrium! 2
Q. 8. 4ra& : - ; raph for ohmic and non-ohmic materials. <i(e one example for each. 2
Q. 9. 4efine the terms 59anetic 4ip5 and 59anetic 4eclination5 &ith the help of rele(ant
diarams. 2
Q. 10. ;n the fiure i(en belo&, a bar manet mo(in to&ards the riht or left induces an e.m.f. in
the coils +1, and +2,. -ind i(in reason, the directions of the direction of the induced currents
throuh the resistors A8 and C4 &hen the manet is mo(in +a, to&ards the riht, and +b, to&ards
the left. 2
Q. 11. +i, 4ra& the raphs sho&in (ariation of inducti(e reactance and Ca paciti(e reactance &ith
fre.uency of applied a.c. source.
+ii, Can the (oltae drop across the inductor or the capacitor in a series =C> circuit be reater than
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the applied (oltae of the a.c. source! ?ustify yourans&er. 2
Q. 12. %he imae of a candle is formed by a con(ex lens on a screen. %he lo&er half of the lens is
painted blac* to ma*e it completely opa.ue. 4ra& the ray diar- am to sho& the imae formation.
2o& &ill this imae be different from the one obtained &hen the lens is not painted blac*! 2
Q. 13. An electric dipole is held in a uniform electric field. +1, @sin suitable diaram, sho& that it
does not undero any translatory motion, and +ii, deri(e an expre- ssion for the tor.ue actin on it
and specify its direction. 3
Q. 14. A al(anometer &ith a coil of resistance 120 ohm sho&s full scale deflection for a current of
2.' mA. 2o& &ill you con(ert the al(anometer into an amm- eter of rane 0 to A.' A! 4etermine
the net resistance of the ammeter. When an ammeter is put in a circuit, does it read slihtly less or
more than the actual current in the oriinal circuit! ?ustify your ans&er. 3
Q. 15. 4efine the term 5resisti(ity5 and &rite its B. ; . unit. 4eri(e the expression for the resisti(ity of
a conductor in terms of number density of free electrons and relaxation time. 3
0r
Btate the principle of potentiometer. 4ra& a circuit diaram used to compare the e.m.f. of t&o
primary cells. Write the formula used. 2o& can the sensiti(ity of a potentiometer be increased!
Q. 16. )xplain, &ith the help of diaram, the principle and &or*in of an a.c. <enera- tor. Write the
expression for the e.m.f. enerated in the coil in terms of its speed of rotation. 3
Q. 17. <i(e reasons for the follo&inC 3
+i, =on distance radio broadcasts use short-&a(e bands.
+ii, %he small o3one layer on top of the stratosphere is crucial for human sur(i(al.
+iii, Batellites are used for lon distance %: transmission.
Q. 18. A fiure di(ided into s.uares, each of si3e 1 mm
2
is bein (ie&ed at a dista- nce of Dcm
throuh a manifyin lens of local lenth 10cm, held close to the eye.
+i, 4ra& a ray diaram sho&in the formation of the imae.
+ii, What is the manification produced by the lens! 2o& much is the area of each s.uare in the
(irtual imae!
+iii, What is the anular manification of the lens! 3
Q. 19. from a 100 W mercury source radiates a photo cell
made of molybdenum metal. ;f the stoppin potential is 1./ :, estimate the &or* function of the
metal. 2o& &ould the photo cell respond to hih intensity +10 ' Wm -2 , red liht of &a(elenth
produced by a 2e - Ee laser! Flot a raph sho&in the (ariation of photoelectric current
&ith ano- de potential for t&o liht beams of same &a(elenth but different intensity. 3
Q. 20. +a, 4ra& a raph sho&in the (ariation of potential enery of a p of nucleons as a function of
their separation. ;ndicate the reions in &hich nuclear force is +i, attracti(e, and +ii, repulsi(e.
+b, Write t&o characteristic features of nuclear force &hich distinuish it from the coulomb force. 3
Q. 21. +a, Bho& that the decay rate 5>5 of a sample of a radionuclide is related to the number of
radioacti(e nuclei 5E5 at the same instant by the expression
- decay is 1.' x 10
1A
s. What is the acti- (ity of a sample of @
ha(in 2' x 10
20
atoms! 3
Q. 22. )xplain, &ith the help of a circuit diaram, ho& the thic*ness of depletion layer in a p-n
"unction diode chanes &hen it is for&ard biased. ;n the follo&- in circuits &hich one of the t&o
diodes is for&ard biased and &hich is re(er- se biased! 3
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Q. 23. 4istinuish bet&een, analo and diital communication. Write any t&o modulation
techni.ues employed for the diital data. 4escribe briefly one of the techni.ues used. 3
Q. 24. 4ra& a schematic diaram of a sinle optical fibre structure. )xplain briefly ho& an optical
fibre is fabricated. 4escribe in brief, the mechanism of propa- ation of liht sinal throuh an
optical fibre. 3
Q. 25. (a) With the help of a labelled diaram, explain the principle and &or*in of a mo(in coil
al(anometer.
(b) %&o parallel coaxial circular coils of e.ual radius 5>5 and e.ual number of turns 5E5, carry e.ual
currents 5;5 in the same direction and are separated by a distance 52>5. -ind the manitude and
direction of the net manetic field prod- uced at the mid-point of the line "oinin their centres. 5
0r
(a) Btate 8iot-Ba(art5s la&. @sin this la&, deri(e the expression for the manetic field due to a
current carryin circular loop of radius 5>5, at a point &hich is at a distance 5x5 from its centre alon
the axis of the loop.
(b) %&o small identical circular loops, mar*ed +1, and +2,, carryin e.ual currents, are placed &ith
the eometrical axes perpendicular of each other as sho&n in the fiure. -ind the manitude and
direction of the net manetic field produced at the point 0.
Q. 26. (a) 2o& is a &a(efront different from a ray! 4ra& the eometrical, shape of the &a(efronts
&hen +i, liht di(eres from a point source, and +ii, liht emeres out of a con(ex lens &hen a point
source is placed as its focus.
(b) Btate 2uyens5 Frinciple. With the help of a suitable diaram, pro(e Bnell5s la& of refraction
usin 2uyens5 Frinciple. 5
0r
(a) ;n $oun5s double slit experiment, deduce the conditions for +i, comstru- cti(e, and +ii,
destructi(e interference at a point on the screen. 4ra& a raph sho&in (ariation of the resultant
intensity in the interference pattern aainst position 5x5 on the screen.
+b, Compare and contrast the pattern &hich is seen &ith t&o coherently illuminated narro& slits in
$oun5s experiment &ith that seen for a coherently illuminated sinle slit producin diffraction.
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Q. 27. (a) 4istinuish bet&een metals, insulators and semiconductors on the basis of their enery
bands.
(b) Why are photodiodes used preferably in re(erse bias condition! A photodiode is fabricated from
a semiconductor &ith band ap of 2.1 e:. Can it detect a &a(elenth of 6000 nm! ?ustify. 5
0r
(a) )xplain briefly, &ith the help of circuit diaram, ho& : - ; characteristics of a p-n "unction
diode are obtained ii +i, for&ard bias, and +ii, re(erse bias. 4ra& the shape of the cur(es obtained.
(b) A semiconductor has e.ual electron and hole concentration of 6 x 10
1
Gm
/
. 0n dopin &ith
certain impurity, electron concentration increases to D X10
12
Gm
/
.
+i, ;dentify the ne& semiconductor obtained after dopin.
+ii, Calculate the ne& hole concentration.
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