ECE101 Electron Devices and Circuits L T P C

3 0 2 4
Version No.: 1.20
Prerequisite: PHY104
Objectives
To give the students a solid background of solid state devices.
To apply that knowledge to understand and develop simple electronic circuits.
To design amplifiers under different configurations and study their parameters
To study the devices under low frequency for small signals
To simulate the above using soft tools and compare their output with hard-wired circuitry.
Expected Outcome
Demystification of Electronics.
Ability to use it as a tool to solve real life problems.
Gain full confidence to work with devices in various types of circuits.
Unit I Diodes
Semiconductor Materials and Properties, the p-n Junction, The ideal diode, Terminal
characteristics of junction diodes, Modeling diode forward characteristics, Revere breakdown
region Zener diode, Rectifier circuits, Limiting and clamping circuits, Physical operation of
diodes, Special diodes.
Unit II The Bipolar Junction Transistor
Device structure and physical operation, current voltage characteristics, the BJT as an amplifier
and a switch, DC Analysis of BJT Circuits, Biasing BJT Amplifier Circuits.
Unit III BJT Amplifiers
Small Signal operations and models, transconductance, input resistances, voltage gain, hybrid-
model, T-model, Small Signal equivalent circuit, Early effect, Single stage BJT amplifiers CE, CB,
CC, Comparison.
Unit IV The MOS Field Effect Transistors
Device structure and physical operation, current voltage characteristics, the MOSFET as an
amplifier and a switch, DC Analysis of MOSFET Circuits, Biasing MOSFET Amplifier Circuits.
Unit V MOSFET Amplifiers
Small Signal operations and models, transconductance g
m
, T equivalent circuit model, Body
effect, Single stage MOS amplifiers Amplifier Configuration, Common Source, Source Follower,
Common Gate Configuration,: Summary and Comparison of the three Basic Amplifier
Configurations, Summary and comparison
Textbooks
1. Adel S. Sedra, Kenneth C. Smith & Arun N. Chandorkar, Microelectronic Circuits,: Theory and
Applications, 5/e, OUP, Chennai, 2009
2. D. A. Neamen, Electronic Circuit Analysis and Design, 3/e, Tata McGraw-Hill, New Delhi,
2007.
Reference Books
1. A. P. Malvino, D. J. Bates, Electronic Principles, 7/e, Tata McGraw-Hill, New Delhi, 2006.
2. R. L. Boylestad and L. Nashelsky Electronic Devices and Circuit Theory 10/e, Pearson
Education, Delhi, 2008.
3. D. A. Bell, Electronic Devices and Circuits, 6/e, Prentice Hall of India, New Delhi, 2008.
4. T. F. Boghart, J. S. Beasley and G. Rico, Electronic Devices and Circuits, Pearson Education,
6/e, Delhi, 2004.
5. B G. Streetman and S. Banerjee, Solid State Electronic Devices, Pearson Education, Delhi, 2002.
Mode of Evaluation: CAT- I & II, Quizzes, Assignments/ other tests, Term End
Examination.
Proceedings of the 29th Academic Council [26.4.2013] 310
ECE101 Electron Devices and Circuits Lab

Experiments:

1. PN Junction diode characteristics
2. Zener diode characteristics
3. Full wave Rectifier
4. Full wave Rectifier with capacitor filter.
5. Clipper
6. Clamper
7. Transistor CB characteristics (Input and Output)
8. Transistor CE characteristics (Input and Output)
9. Transistor as an amplifier (CE)
10. Emitter Follower (CC)
11. FET characteristics
12. UJT Characteristics.





























Proceedings of the 29th Academic Council [26.4.2013] 311