Irfh 5215 PBF

IRFH5215PbF
HEXFET Power MOSFET

VDS
150
RDS(on) max
58
Qg (typical)
21
nC
RG (typical)
2.3
27
(@VGS = 10V)
ID
(@Tc(Bottom) = 25C)
PQFN 5X6 mm
Applications
Primary Side Synchronous Rectification

Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits

Features
Low RDSon (< 58 m)
Low Thermal Resistance to PCB (<1.2C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRFH5215TRPBF
IRFH5215TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings

VDS
VGS
ID @ TA = 25C
ID @ TA = 70C
ID @ TC(Bottom) = 25C
ID @ TC(Bottom) = 100C
IDM
PD @TA = 25C
PD @ TC(Bottom) = 25C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor

Operating Junction and
Storage Temperature Range
g
g
Max.
150
20
5.0
4.0
27
17
108
3.6
104
Units
0.029
-55 to + 150
W/C
Notes through are on page 8

1
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Submit Datasheet Feedback
January 13, 2014
IRFH5215PbF
Static @ TJ = 25C (unless otherwise specified)
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Min.
150
3.0
21
Typ.
0.19
45.5
-12
21
7.2
2.2
6.7
4.9
8.9
10
Max. Units
Conditions
V VGS = 0V, ID = 250uA

V/C Reference to 25C, ID = 1.0mA
58
m VGS = 10V, ID = 16A
5.0
V
VDS = VGS, ID = 100A
mV/C
20
VDS = 150V, VGS = 0V
A
VDS = 150V, VGS = 0V, TJ = 125C
250
100
VGS = 20V
nA
-100
VGS = -20V
S VDS = 50V, ID = 16A

32
VDS = 75V
VGS = 10V
nC
ID = 16A
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2.3
6.7
6.3
11
2.9
1350
120
30
BVDSS
VDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
ns
pF
VDD = 75V, VGS = 10V

ID = 16A
RG=1.3
VGS = 0V
VDS = 50V
= 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
Typ.
Max.
96
16
Units
mJ
A
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
IS
ISM
Typ.
Max. Units
27
108
c
VSD
trr
Qrr
ton
Min.
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25C, IS = 16A, VGS = 0V
TJ = 25C, IF = 16A, VDD = 75V
di/dt = 500A/s
1.3
V
40
60
ns
370
555
nC
Time is dominated by parasitic Inductance
e
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
Typ.
Max.
1.2
15
35
22
Units
C/W
January 13, 2014
IRFH5215PbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
Tj = 25C
ID, Drain-to-Source Current (A)
100
BOTTOM
10
60s PULSE WIDTH

Tj = 150C
60s PULSE WIDTH
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
100
0.1
BOTTOM
10
5.0V
5.0V
0.01
0.1
0.1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
100
1000
1000
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
T J = 150C
10
T J = 25C
1
VDS = 50V
60s PULSE WIDTH
ID = 16A
VGS = 10V
2.0
1.5
1.0
0.5
0.0
10
12
14
16
-60 -40 -20 0
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics

100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 16A
C oss = C ds + C gd
10000
Ciss
1000
Coss
Crss
100
20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
V DS, Drain-to-Source Voltage (V)
0.1
VDS= 120V
VDS= 75V
12.0
VDS= 30V
10.0
8.0
6.0
4.0
2.0
0.0
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

3
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

January 13, 2014
IRFH5215PbF
1000
ISD, Reverse Drain Current (A)
1000
100
TJ = 150C
10
T J = 25C
1
OPERATION IN THIS AREA

LIMITED BY R DS(on)
100
1msec
10msec
10
Tc = 25C
Tj = 150C
Single Pulse
VGS = 0V
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
10
100
1000
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage

30
VGS(th) , Gate threshold Voltage (V)
6.0
25
ID, Drain Current (A)
100sec
20
15
10
5
0
5.0
4.0
ID = 100A
ID = 250A
ID = 1.0mA
ID = 10mA
3.0
2.0
25
50
75
100
125
150
-75 -50 -25
T C , Case Temperature (C)
25
50
75 100 125 150
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

4
January 13, 2014
130
400
ID = 16A
120
110
TJ = 125C
100
90
80
70
60
TJ = 25C
50
40
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m )
IRFH5215PbF
ID
TOP
2.0A
4.9A
BOTTOM 16A
350
300
250
200
150
100
50
0
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
25
50
75
100
125
150
Starting T J , Junction Temperature (C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
DRIVER
VDS
D.U.T
RG
+
V
- DD
IAS
20V
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width 1 s
Duty Factor 0.1
Fig 15a. Switching Time Test Circuit
I AS
0.01
tp
10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
January 13, 2014
IRFH5215PbF
D.U.T
Driver Gate Drive
D.U.T. ISD Waveform

Reverse
Recovery
Current
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D=
Period
P.W.
V DD
Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Id
Vds
Vgs
L
DUT
1K
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
Qgd
Qgodr
Fig 18. Gate Charge Waveform
January 13, 2014
IRFH5215PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking

INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(4 or 5 digits)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
January 13, 2014
IRFH5215PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information
Indus trial
Qualification level
(per JE DE C JE S D47F
Moisture Sensitivity Level
PQFN 5mm x 6mm
RoHS compliant
guidelines )
MS L1
(per JE DE C J-S T D-020D
Yes
Qualification standards can be found at International Rectifiers web site

http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 0.75mH, RG = 50, IAS = 16A.
Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
Comment
1/13/2014
Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
Updated data sheet with the new IR corporate template.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
January 13, 2014

Irfh 5215 PBF

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Irfh 5215 PBF

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IRFH5215PbF

HEXFET Power MOSFET

Primary Side Synchronous Rectification

Features and Benefits

EOL notice #259

Absolute Maximum Ratings

Linear Derating Factor

Notes through are on page 8

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

January 13, 2014

Gate-to-Source Forward Leakage

V VGS = 0V, ID = 250uA

S VDS = 50V, ID = 16A

nC VDS = 16V, VGS = 0V

VDD = 75V, VGS = 10V

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

January 13, 2014

60s PULSE WIDTH

60s PULSE WIDTH

V DS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

ID, Drain-to-Source Current (A)

Fig 1. Typical Output Characteristics

-60 -40 -20 0

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

20 40 60 80 100 120 140 160

T J , Junction Temperature (C)

VGS, Gate-to-Source Voltage (V)

V DS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

www.irf.com 2014 International Rectifier

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

January 13, 2014

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

OPERATION IN THIS AREA

VDS, Drain-to-Source Voltage (V)

VSD, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

-75 -50 -25

T C , Case Temperature (C)

75 100 125 150

Fig 9. Maximum Drain Current vs.

Fig 10. Threshold Voltage vs. Temperature

Thermal Response ( Z thJC ) C/W

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

January 13, 2014

EAS , Single Pulse Avalanche Energy (mJ)

RDS(on), Drain-to -Source On Resistance (m )

Starting T J , Junction Temperature (C)

VGS, Gate -to -Source Voltage (V)

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage