Readout and Functional Electronics For Intracranial Pressure Icp Sensor

Proceedings of the 2nd International Conference on Current Trends in Engineering and Management ICCTEM -2014
17 19, July 2014, Mysore, Karnataka, India
INTERNATIONAL JOURNAL OF ELECTRONICS AND

COMMUNICATION ENGINEERING & TECHNOLOGY (IJECET)
ISSN 0976 6464(Print)
ISSN 0976 6472(Online)
Volume 5, Issue 8, August (2014), pp. 32-45
IAEME: http://www.iaeme.com/IJECET.asp
Journal Impact Factor (2014): 7.2836 (Calculated by GISI)
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IJECET
IAEME
READOUT AND FUNCTIONAL ELECTRONICS FOR INTRACRANIAL

PRESSURE (ICP) SENSOR
Aravind G1,
Dr. C.R.Venugopal2,
Vijay Mishra3
Dept. of ECE, SJCE, Mysore, India

HOD, Dept. of ECE, SJCE, Mysore, India
3
CeNSE, Indian Institute of Science(IISC), Bangalore, India
2
ABSTRACT
Intracranial Pressure (ICP) is the combination of the pressure exerted by the brain
tissue, blood and cerebral spinal fluid (CSF). Continuous monitoring of ICP data has evolved into an
indispensable diagnosis tool in the current medical scenario. The main advantage of continuous
monitoring of ICP is that it prevents the blind prophylactic treatment of ICP, avoiding
unnecessary administration of the ICP lowering therapies which in turn can be dangerous at times.
This work involves electrical characterization of intracranial pressure(ICP) sensor developed
at CeNSE, IISC and its comparison with a commercially available similar sensor. The sensitivity of
these sensors are measured and analyzed for different configuration of associated network bridge.
Using commercially available similar sensor available in the market we have proposed a new idea
for intra-cranial pressure(ICP) monitoring in the cranial vault, along with the temperature. First part
consists of our new proposed model for ICP monitoring along with temperature. In the second part
we have tried to emulate our new proposed model using commercially available sensor for
different pressure as well as temperature values. Electronics part consisting of opamps in
different configurations, has been designed and tested several times, inorder to condition the low
output voltage of sensor. Finally MSP430 microcontroller has been programmed to accept the output
of signal conditioning board and display it on the output devices. Programming is done using
Embedded C language. IDE tool used is code composer studio(CCS).
Keywords: Commercially Available Sensor, Emulation, Pressure Sensor, Piezoresistor, ICP,
Wheatstone Bridge.
1. INTRODUCTION
Intracranial Pressure (ICP) is the combination of the pressure exerted by the brain tissue,
blood, and cerebral spinal fluid (CSF) [1]. The normal range of this pressure is 0 10 mm of Hg [2].
32
Continuous monitoring of ICP, sometimes for a few days, is crucial in diagnosing and treating
patients with severe head injuries.
1.1 Problem statement
Present ICP monitoring devices available in market focuses only on monitoring pressure
inside the cranium that houses the brain. Simultaneous monitoring of intracranial temperature (ICT)
is also desirable and has not been covered by the existing systems.
Accurate knowledge of cerebral temperature is assuming increasing importance, because
its manipulation is employed more frequently for cerebral protection. Recent work has confirmed
that body temperature and brain temperature may differ significantly. Hence, brain temperature
monitoring is essential if one is trying to improve outcome by lowering brain temperature. ICP
monitoring is very crucial especially during head injuries.
1.2 Objective
The main objective of this project is to develop an embedded system for the ICP sensor and
to perform electrical characterization of the ICP sensor, which has been designed and developed at
CeNSE, IISC.
The work involves programming of microcontroller to read the sensor output and display it
on output devices. This project has challenges like setting up the calibration setup and implementing
the sensor practically. It involves application of electronics and microcontroller programming skills,
calibration and testing of the sensors. The purpose of Intracranial Pressure (ICP) monitoring is to
trend the pressure inside the cranial vault. The pressure readings determine the interventions
necessary to prevent secondary brain injury, which can lead to permanent brain damage and
even death. If the intracranial pressure is in the range of 20 to 25 mmHg, therapeutic interventions,
medical and/or surgical, should be initiated. This is because as the ICP increases, it gradually
becomes more difficult for the blood to be pumped to the head to perfuse the brain tissue.
1.3 Motivation
Figure 1.1 shows typical brain sites used for ICP measurement, such as intraventricular drain,
intraparenchymal probe, sub-arachnoid probe, epidural probe.
Intra cranial contents are:
Brain - 80 to 85%
Cerebrospinal Fluid(CSF) - 8 to 12%
Cerebral Blood Volume - 5 to 8%
Figure 1.1: The typical brain sites used for ICP measurement
33
As the cranial vault is essentially a closed, fixed bony box, its volume is constant. This
volume is described by the Monro-Kellie doctrine, proposed in the early part of the 19th century:
Intracranial (constant) = Brain + CSF + Blood + Mass lesion
As all these components are fluids and non-compressible, once the cranial vault is filled, it's
pressure rises dramatically. This intracranial pressure (ICP) rise can then lead to interruption of
cerebral blood flow by reducing the cerebral perfusion pressure. As an intracranial mass lesion or
oedematous brain expands, some compensation is possible as cerebrospinal fluid (CSF) and blood
move into the spinal canal and extracranial vasculature respectively. Beyond this point, further
compensation is impossible and ICP rises dramatically [4].
1.4 Scope of the project
Simultaneous monitoring of ICP and ICT(Intra cranial temperature) is not reported anywhere
else. ICT is equally important to monitor in case of serious head injuries. Simultaneously monitoring
of pressure and temperature by suitable electronic processing of electrical signals coming out of the
sensor is done here. In this project ICP monitoring systems has been set up at laboratory conditions
to provide an virtual environment to sense the ICP and ICT through sensor.
1.5 Organization of the report
The framework of the project is described as follows:
1- Introduction
This chapter gives a brief introduction about the project work, project objectives, motivation
for the project, scope and organization of the project report.
2- Sensors used in our experiment
This chapter deals with different types of sensors used in this project and its electrical
characterization.
3- Functional electronics
This section deals with the hardware part of the project.
2. SENSORS USED IN OUR EXPERIMENT
A sensor is a device, which responds to an input quantity by generating a functionally related
output usually in the form of an electrical or optical signal. Sensor's sensitivity indicates how much
the sensor's output changes when the measured quantity changes. For instance, if the mercury in a
thermometer moves 1 cm when the temperature changes by 1 C, the sensitivity is 1 cm/C.
In this project we are using three sensors:
ICP sensor- Designed and developed at CeNSE IISC.

Commercially available sensor
Emulated sensor- This sensor tries to emulate the behavior of ICP sensor by using
commercially available sensor.
2.1 Piezoresistive pressure sensor

Piezoresistivity is the change of resistance of a material when it is submitted to stress.
Typically, pressure is measured by monitoring its effect on a specifically designed mechanical
34
structure, referred to as the sensing element. The application of pressure to the sensing element
causes a change in shape, and the resulting deflection (or strain) in the material can be used to
determine the magnitude of the pressure. Piezoresistive pressure sensor's design includes two basic
elements. They are thin elastic diaphragm and piezoresistive material. The diaphragm is fixed around
the edges, with a trace wire on the surface. The wire is made of a piezoresistive material. When a
pressure is applied to the back of the diaphragm, the diaphragm (and the wire on it) deform,
changing the resistance of the wire. By measuring the resistance of the wire, we can measure the
pressure causing the deformation. The sensitivity of the sensor depends on the piezoresistive
material. Schematic of a sensor is as shown in Figure. 2.1.
Figure 2.1: Cross sectional schematic of pressure sensor

Here L and H correspond to length and thickness of the diaphragm respectively. Silicon
based pressure sensors have been widely used for industrial and biomedical electronics [8]. In this
design, Silicon nitride is used as diaphragm material and polysilicon is used as piezoresistive
material.
2.2 ICP sensor
This ICP sensor model has been designed and developed as IISC, Bangalore. In this design,
silicon nitride is used as diaphragm material and polysilicon is used as piezoresistive material. At
present, in the market we can find sensors which can only sense ICP. Simultaneous monitoring of
ICP and ICT(Intra cranial temperature) is not reported anywhere else. ICT is equally important to
monitor in case of serious head injuries. Simultaneously monitoring of pressure and temperature by
suitable electronic processing of electrical signals coming out of the sensor is done here. Therefore
the main objective of the sensor is to sense intracranial pressure as well as intracranial temperature.
The top views of ICP sensor is shown in figure 2.2. The figure 2.3 shows the side view of ICP
packaged sensor. The resistor which is on the diaphragm is sensitive to both temperature as well as
pressure. The resistor which is outside the diaphragm is sensitive to only temperature.
Figure 2.2: Top profiles of ICP sensor

35
Figure 2.3: Side profile of ICP packaged sensor

2.2.1 Pressure calibration
Practically, inorder to apply a constant pressure to the sensor we have used
sphygmomanometer at the input side of ICP monitoring system. The pressure was applied in steps of
40mmHg ranging from 0-160mmHg.
Figure 2.4: Hardware setup of ICP sensor for pressure calibration

Table 1: Tabulated results for ICP sensor
Pressure in mm Hg Bridge O/P in mV
Difference
0
1.3419
40
1.0981
-0.2438
80
0.8127
-0.2854
120
0.5513
-0.2614
160
0.3076
-0.2437
Sensitivity is 7.13 V/mmHg
Sensitivity=(Difference between any two bridge output voltage) / Number of divisions
= (1.3419 - 1.0981) / 40 = 0.007135
Sensitivity is 7.135 V/oC
36
Bridge output(millivolts) v/s Pressure(mmHg)

1.5
0.5
0
0
50
100
150
200
Figure 2.5: Bridge output voltage variation for different pressure values in ICP sensor.
The circuit is completed by balancing the bridge. The pressure is applied in steps of 40mmHg
ranging from 0-160mmHg. The changes in the bridge output voltage values are observed with the
increase in pressure and the results are tabulated (Table 1). The complete hardware setup of balanced
bridge for pressure calibration in ICP sensor is as shown in figure 2.4. The changes in the bridge
output voltage values of wheatstone bridge for different pressure values is shown in the figure 2.5.
We can notice a decreasing voltage as pressure increases. The result shows that the sensitivity of our
ICP sensor is 7.13 V/mmHg. This shows that it is not very much sensitive to applied pressure.
2.2.2 Temperature calibration
Similar to pressure calibration, complete the circuit by adding two external resistors to from a
full bridge configuration. This complete setup is kept in a Hot-Cold chamber. Hot cold chamber is an
electronic device which is consists of a air tight vacuum chamber. The chamber can be adjusted to
any temperature ranging from -200 to +200 degree celcius. The components are place in that
chamber and different temperatures are applied, inorder to study the behavior of the components.
Here in this case, the ICP sensor is balanced through Wheatstone bridge and placed in this Hot-Cold
chamber. The sensor is kept inside the Hot-Cold chamber and the other two resistors of Wheatstone
bridge is kept outside the chamber. We have used resistance pots to balance the bridge. The pots are
kept outside the Hot-Cold chamber inorder to prevent the pot resistance variation affecting the bridge
output. The complete setup of ICP sensor for temperature calibration is shown in figure 2.6.
Figure 2.6: Hardware setup of ICP sensor for temperature calibration
37
Table 2: Tabulated result for ICP sensor

Temperature in deg celcius
Bridge O/P in mv
Difference
0
3.7354
10
3.9047
0.1693
20
4.1019
0.1972
30
4.3857
0.2838
40
4.5498
0.1641
Sensitivity is 0.02838 mV/oC
Bridge output v/s Temperature
4.7
4.5
4.3
4.1
3.9
3.7
3.5
0
10
20
30
40
50
Figure 2.7: Bridge output voltage variation for different temperature values
The sensor is tested for different temperatures ranging for 0 degree celcius to 40 degree
celcius in steps of 10 degree celcius. Bridge output voltages at different temperatures are tabulated
(Table 2). Calculate the bridge output voltage for per degree celcius change in temperature. Shown in
figure 2.7.
2.3 Commercially available sensor
The P161 is a ultraminiature silicon piezoresistive pressure sensor die that is suitable for
monitoring pressure from the tip of a catheter. This sensor is offered in a miniature 1150 X 725 m
die. When excited with an AC or DC voltage source, it produces a milli voltage output that is
proportional to input pressure [9]. It is half bridge design, where external resistors are needed to
complete a full bridge configuration. Below figure 2.8 shows commercially available sensor
schematic diagrams: Complete the full bridge by inserting two 800 external resistors, closely
matched to minimize offset error. i.e. the built in resistors are of 800. So external resistors of 800
each are used to balance the wheatstone bridge. The dimension of the sensor is given by (l:w:h)
:1150m X 725 m X 170m.
Figure 2.8: Commercially available sensor schematic diagram

38

The complete hardware setup of balanced bridge for pressure calibration in commercially
available sensor is as shown in figure 2.9. The resistance of resistor R32 on commercially available
sensor increases with pressure. On the other hand, resistance of resistor R12 decreases with pressure.
Figure 2.9: Hardware setup of balanced bridge for pressure calibration

We have used resistance pots to balance the bridge, as variable resistances can be applied
through the resistance pots. Apply pressure to the sensor through sphygmomanometer and tabulate
the bridge output voltage for different pressure values (Table 3). Calculate bridge output voltage for
per mmHg pressure variation. Refer figure 2.10.
Table 3: Tabulation for commercially available sensor
Pressure in mm Hg Bridge output in mV
Difference
0
-4.9185
40
-3.000
1.9185
80
-0.7066
2.2934
120
1.580
2.2446
160
3.8612
2.3232
This commercially available sensor is not sensitive to temperature, so we are not performing
temperature calibration, only pressure calibration is done here. The sensitivity of commercially
available sensor is 58.08 V/mmHg.
6
4
2
0
0
50
100
150
200
-2
-4
-6
Figure 2.10: Bridge output voltage of commercially available sensor for different pressure
39
2.3.2 Emulating ICP sensor using commercially available sensor

In ICP sensor, the resistance of resistor which is on diaphragm decreases with pressure and
resistance of the resistor outside the diaphragm increases with pressure. Therefore we have selected
R12 of commercially available sensor for calibration.
Emulation: R12 from commercially available sensor and a fixed resistor of same value are
connected in series. This combination forms the ICP sensor model, as it has one resistor is on the
diaphragm and the other one outside the diaphragm, shown in figure 2.11. below.
Figure 2.11: Hardware setup for emulating ICP model

Complete the circuit by adding two external resistors to from a full bridge configuration.
Tabulate the bridge output voltage for different pressure values (Table 4). Calculate bridge output
voltage for per mmHg pressure variation, figure 2.12.
Table 4: Tabulation for emulated model
Pressure in mm Hg
Bridge output in mV
Difference
0
4.8851
40
4.2335
-0.6516
80
3.4356
-0.7979
120
2.4978
-0.9378
160
1.5969
-0.9009
6
5
4
3
2
1
0
0
50
100
150
200
Figure 2.12: Bridge output voltage of emulated hardware setup against different pressure
40
2.3.4 Temperature calibration

Inorder to apply a constant temperature to the sensor we are using an instrument known as
"Hot Cold chamber". Here, the Hot-Cold chamber is considered as a prototype of cranial vault.
Therefore sensor to be tested is placed inside this chamber and the bridge balancing is done outside
the chamber.
Similar to pressure calibration, complete the circuit by adding two external resistors to from a
full bridge configuration. This complete setup is kept in a Hot-Cold chamber, figure 2.13. The sensor
is tested for different temperatures ranging for 0 degree celcius to 40 degree celcius in steps of 10
degree celcius. Bridge output voltage at different temperatures is tabulated (Table 5). Calculate the
bridge output voltage for per degree celcius change in temperature. Shown in figure 2.14.
Figure 2.13: Hardware setup for emulating ICP model using commercially available sensor for
temperature calibration
Table 5: Tabulation for emulated model
Temperature in deg celcius
Bridge O/P in mv
0
-40.808
10
-20.671
20
-0.9886
30
17.1053
40
35.2352
Sensitivity is 2.01373 millivolts/C
Difference
20.1373
19.6828
18.0939
18.1299
At room temperature: Bridge output voltage=9.4104 millivolts.

Bridge output(millivolts) v/s Temperature(C)
40
30
20
10
0
-10 0
10
20
30
40
50
-20
-30
-40
-50
Figure 2.14: Bridge output voltage of emulated hardware setup against different temperature
41
2.3.5 Comparison of results

2.3.5.1 Pressure calibration
Sensors
ICP sensor
Emulated sensor
Commercially available sensor
Sensitivity of balanced bridge output

7.13 V/mmHg
28.042 V/mmHg
58.42 V/mmHg
2.3.5.2 Temperature calibration

Sensors
ICP sensor
Emulated sensor
Sensitivity of balanced bridge output

0.02838 millivolts/oC
2.03853 millivolts/oC
The sensitivity of the ICP sensor developed at IISC is too less as compared to the emulated
sensor and commercially available sensor. Emulated and commercially available sensors are almost
four and eight times sensitive to pressure than ICP sensor respectively.
3. FUNCTIONAL ELECTRONICS
3.1 Block diagram of the system
The output of the balanced Wheatstone bridge will be in milli-volts. This voltage is very
small for further processing. Therefore it should be conditioned before applying to MSP430
microcontroller. Then, the output of the microcontroller is given output devices. Complete block
diagram of the system is shown in figure 3.1.
ICP
monitoring
system
Signal
conditioning
board
MSP430
Output unit
Figure 3.1: Block diagram of the system

3.2 ICP monitoring system
Practically in-order to apply a constant pressure to the sensor, we have used
sphygmomanometer and a pressure transducer tester DPM1B from Fluke Biomedical at the input
side. Functioning of this meter is to provide the pressure as well as measure it. One important
thing to be noted here is that we must make sure that the sphygmomanometer is leakage free. i.e.
there should not be any leakage in the sphygmomanometer inorder to read a correct pressure.
3.3 Signal conditioning board
The figure 3.2 shows the signal conditioning board. This part has been designed and tested at
systems lab, IISC. The sensitivity of the pressure sensor being developed in IISC is about
7.13V/mmHg. It is very difficult to transmit this small signal directly into ADC for computation as
for even 100 mmHg output would be 0.713mV which is a very small signal and ADC even with 10
bits resolution isnt able to digitize it without adding the noise component. Thus an additional
circuitry is required which will be able to condition the signal for accurate pressure readings as well
as extract the temperature data from the pressure signal. This circuitry forms the part of this analog
front end. The circuit level diagram shown in the figure 3.2 is the representation of the analog front
42
end design. The ICP resistors are denoted by R3 and R4. R4 resistor is on the diaphragm and the one
which is outside diaphragm is denoted by R3.
Figure 3.2: Signal conditioning board

The R3 resistor varies with only temperature, whereas R4 resistor varies with temperature as
well as pressure. Therefore the differential signal obtained at one end of bridge varies with
temperature as well as pressure(INPUT1) and the differential obtained signal at the other end varies
with only temperature(INPUT2). Then these signals are fed to dedicated Instrumentation
amplifiers(IA1 and IA2) for the Pressure and temperature extraction.
3.3.1 Pressure extraction path
The differential signal, INPUT1 is a function of both temperature and pressure, and the
differential signal, INPUT2 is a function of only temperature. The pressure extraction path is via IA1
and OP2.
Initially, before applying to IA1, the differential signal, INPUT1 is passed through a voltage
follower inorder to match the input impedance of junction PCB output and analog signal
conditioning input.
At room constant temperature the INPUT1 signal varies according to the applied pressure to
the sensor. As temperature being a common mode signal in both INPUT1 and INPUT2, they get
cancelled out and only pressure and offset voltage appears at the output of IA1. Now if by any
chance the output of IA1 is negative, we can negate this by adding a reference voltage using OP2,
which act as a summing amplifier with inputs coming from the output stage of IA1 and a constant
reference voltage coming from reference generating path. Thus output is scaled as well as amplified
by this stage.
43
Ideally at 0 mmHg pressure the bridge output should be 0 volts. But practically we observe
some finite voltage at 0 mmHg pressure. This bridge output voltage at 0 mmHg pressure is known as
Offset voltage. Therefore the output at pressure extraction path consists of (pressure + offset)
voltage. While programming the microcontroller we should equate this offset value to zero in order
to display correct pressure values on output devices.
3.3.2 Temperature extraction path
Inorder to apply a constant temperature to the sensor we are using an instrument known as
"Hot Cold chamber". Here, the Hot-Cold chamber is considered as a prototype of cranial vault.
Therefore sensor to be tested is placed inside this chamber and the bridge balancing is done outside
the chamber.
Sensor is exposed to different temperatures, ranging from 0 to 40 degree celcius in steps 10
degrees. The bridge output voltage for each temperature variation are noted and results are tabulated.
The differential signal, INPUT2 is a function of only temperature and the temperature extraction path
is via IA2 and OP3. Initially, before applying to IA2, the differential signal, INPUT2 is passed
through a voltage follower inorder to match the input impedance of junction PCB output and analog
signal conditioning input.
One half of the differential signal is taken and it is provided to the instrumentation amplifier
(IA2), the other signal which is fed to IA2 is a reference voltage generated by the reference
generating circuit. Wheatstone bridge also acts as a voltage divider and will divide the voltage
according to the resistor arms, thus the output of one of the differential arm can be nearly
predicted and modified depending on the changes observed in the excitation voltages. With
this arrangement temperature data is preserved from getting cancelled as it is present only in
one end and other end is constant voltage. Thus the single ended voltage at the output of
IA2 contains a component of the temperature experienced by the system which is extracted.
Now if by any chance the output of IA2 is negative, we can negate this by adding a reference
voltage using OP2, which act as a summing amplifier with inputs coming from the output stage of
IA2 and a constant reference voltage coming from reference generating path. Thus output is scaled as
well as amplified by this stage.
3.4 MSP430 Microcontroller
MSP430 is 16 bit micro controller with a Von Neuman architecture. It has 16 bit address bus
and 16 bit data bus. Registers are 16 bit wide. CPU is often described as a RISC. The output of signal
conditioning board is given to the ADC of MSP430 microcontroller. The controller is programmed
to accept the analog values and display its respective decimal values on the LCD display unit.
CONCLUSION AND FUTURE WORK
Basically, the project work involves electrical characterization of intracranial pressure(ICP)
sensor developed at CeNSE, IISC and its comparison with a commercially available similar sensor.
The sensitivity of these sensors are measured and analyzed for different configuration of associated
network bridge. Using commercially available similar sensor available in the market we have
proposed a new idea for intra-cranial pressure(ICP) monitoring in the cranial vault, along with the
temperature. The sensitivity of commercially available sensor and ICP sensor has been tested and
verified at different temperatures and pressures.
The electrical characterization results shows that the sensitivity of the ICP sensor developed
at IISC is too less as compared to the commercially available sensor. So inorder to know the range of
sensitiveness of ICP sensor we tried to emulate the ICP sensor model using commercially available
sensor.
44
After analyzing and comparing the electrical characterization results we have noticed that the
sensitivity of the ICP sensor developed at IISC is too less as compared to the emulated sensor and
commercially available sensor. The sensitivity variation is almost 1:4:8 between ICP sensor,
Emulated ICP model and Commercially available sensors respectively. That is, our ICP sensor is
four times less sensitive and eight times less sensitive as compared to emulated model and
commercially available sensors respectively.
Electronics required for the intracranial pressure monitor has been designed and tested
several times. MSP430 microcontroller has been successfully programmed to extract the sensor
output and display it on output devices. Software part consists of embedded system programing.
Program is written in Embedded C language and the IDE tool used is CCS(code composer studio).
In future, our aim is to develop an ICP sensor whose sensitivity is as close to emulated
sensor. Inorder to increase the sensitivity of the present ICP sensor a new idea has been proposed and
the development of that new ICP sensor is under progress. As soon as it is designed it will be tested
and verified at different temperatures and pressures.
REFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
Overview of Adult Intracranial Pressure (ICP) Management & Monitoring Systems, Orlando
Regional Healthcare, Education & Development.
Normal & Abnormal Intracardiac Pressures by Lancashire & South Cumbria Cardiac
Network.
Journal of Cerebral Blood Flow & Metabolism (1999) 19, 762770; doi:10.1097/00004647199907000-00006.
http://www.trauma.org/archive/neuro/icp.html.
Intracranial pressure monitoring for traumatic brain injury in the modern era by Llewellyn C
Padayachy, Anthony A Figaji, M R Bullock.
Intracranial Pressure Monitoring by Gaurav Guta MD; Chief Editor: Jonathan P Miller.
Chih-Tang Peng1, Ji-Cheng Lin1, Chun-Te Lin1, Kuo-Ning Chiang2. Investigation of
Thermal Effect of Packaged CMOS Compatible Pressure Sensor, in Proc of IMECE2002,
ASME International Mechanical Engineering Congress & Exposition. November 17-22,
2002, New Orleans, Louisiana.
Vidhya Balaji and K.N. Bhat CeNSE IISC.A Comparison of Burst Strength and Linearity of
Pressure Sensors having Thin Diaphragms of Different Shapes.
http://www.ge-mcs.com/en/pressure-mems/mems-elementsdevices/p161.html.
http://www.allaboutcircuits.com/vol_3/chpt_8/10.html.
MSP430 Microcontroller Basics, author John H Davies.
Using Code Composer Studio IDE with MSP430, a quick start guide by Vu Tuan Than, Rene
Beuchat.
http://www.ti.com/product/msp430g2553.
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Proceedings of the 2nd International Conference on Current Trends in Engineering and Management ICCTEM -2014

17 19, July 2014, Mysore, Karnataka, India

INTERNATIONAL JOURNAL OF ELECTRONICS AND

READOUT AND FUNCTIONAL ELECTRONICS FOR INTRACRANIAL

Dept. of ECE, SJCE, Mysore, India

ICP sensor- Designed and developed at CeNSE IISC.

2.1 Piezoresistive pressure sensor

Figure 2.1: Cross sectional schematic of pressure sensor

Figure 2.2: Top profiles of ICP sensor

Figure 2.3: Side profile of ICP packaged sensor

Figure 2.4: Hardware setup of ICP sensor for pressure calibration

Bridge output(millivolts) v/s Pressure(mmHg)

Figure 2.6: Hardware setup of ICP sensor for temperature calibration

Table 2: Tabulated result for ICP sensor

Figure 2.8: Commercially available sensor schematic diagram

2.3.1 Pressure calibration

Figure 2.9: Hardware setup of balanced bridge for pressure calibration

2.3.2 Emulating ICP sensor using commercially available sensor

Figure 2.11: Hardware setup for emulating ICP model

2.3.4 Temperature calibration

At room temperature: Bridge output voltage=9.4104 millivolts.

2.3.5 Comparison of results

Sensitivity of balanced bridge output

2.3.5.2 Temperature calibration

Sensitivity of balanced bridge output

Figure 3.1: Block diagram of the system

Figure 3.2: Signal conditioning board

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