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S. Saha
N+
C
N-
N+
Page 1
SiO2
N+ Buried Collector
N-Epi
N+
strip oxide
clean
grow single crystal epi layer
S. Saha
grow oxide
mask #1: BC
implant Sb
drive-in
Page 2
NPN-BJT Fabrication
Boron
N-Epi
P+
N+
grow oxide
mask #2: ISO
implant B
oxidation
Phosphorus
N-Epi
N+
P+
N+
P
S. Saha
Page 3
NPN-BJT Fabrication
B
P+
N-Epi N+
P+
N+
P
As/P
P+
N+
P+
N+
P
S. Saha
Page 4
NPN-BJT Fabrication
7. Define contact area
P+
N+
N-Epi N+
P+
N+
P
Contacts
8. Interconnect
P+
N+
N-Epi N+
P+
N+
deposit Aluminum
anneal
mask #7: Metal
P
9. Deposit protective dielectric (SiO2 or Si3N4). Mask #8 to open bonding pads.
S. Saha
Page 5
N+
1.E+21
P+
-3
N-Epi N+
Concentration (cm )
P+
b) 1d-cross-section along
the intrinsic device.
N+
NPN
Intrinsic
device
N+ Emitter
1.E+20
N+ Burried layer
1.E+19
P Base
1.E+18
1.E+17
N- Collector
1.E+16
1.E+15
0
S. Saha
Page 6
N Epitaxial layer
P+ Isolation
N+ Buried layer
P+ Base
N+ Emitter
CONTACT
Base
S. Saha
Emitter
Collector
Page 7
-3
N+ Emitter
1.E+20
N+ Burried layer
1.E+19
P Base
1.E+18
1.E+17
N- Collector
1.E+16
1.E+15
0
S. Saha
1.E+21
Concentration (cm )
Depth (um)
Page 8
Page 9
+
0.7 V
forward bias
NMost
of the
e
N+
C
+
5V
reverse bias
Page 10
Basic Operation
if WB << Ln (diffusion length) in the base, most of the injected e get
into the collector without recombining. A few do recombine; the
holes necessary for this are supplied as base current.
the e reaching the collector are collected across the C-B junction
depletion region.
E
IB
IC
Electrons flowing
emitter to collector
IE
IE
Holes
into emitter
IC
Recombining electrons
IB
Since most of the injected e reach the collector and only a few holes
are injected into the emitter, the required IB << IC.
Therefore, the device has a substantial current gain.
S. Saha
Page 11
x =
D p 1 dp kT 1 dp
=
p p dx q p dx
(1)
(2)
Page 12
(3)
J n = kT n
dn
n dp
+ q Dn
dx
p dx
(4)
q D n dp
dn
n
p
=
+
Jn
p dx
dx
q Dn d ( pn )
=
(5)
Or, J n
p dx
We integrate (5) over the quasi-neutral base region, WB.
S. Saha
Page 13
N+
xdeb
xdbc
N-
WB
x=0
Jn
WB
p dx
=
q Dn
x = WB
W B d pn
dx
dx
(6)
W B p dx
Jn
= pn(W B ) pn(0)
q Dn
o
S. Saha
(7)
Page 14
N
nno
ni2/NA
pno
in N region ND
+
+
+
+
+
+
+
+
+
+
+
P
ppo
npo
kT N D N A kT nno
ln
=
ln
2
q
ni
q
n po
q bi
kT
q bi
kT
(8)
(9)
Page 15
q V
nn + + pp
A
bi
(10)
nn = n p e
p p = pn e
kT
bi V A
kT
pn
(11)
pno
+
+
+
+
+
+
+
+
+
np
npo
q bi V A
q bi
n =
= n = n
kT
n
e
p
n
no
po e kT
S. Saha
(12)
Page 16
n p = n po e
qV A
kT
(13)
Similarly from (9) and (11) we can show under low level injection:
p n = p no e
qV A
kT
(14)
pn = n e
2
i
qV A
kT
(15)
(13) & (14) define the minority carrier densities at the edge of the
space charge region under applied bias while (15) defines the pnproduct of carriers at the depletion edge.
S. Saha
Page 17
pn(0 ) = n e
2
i
qV BE
kT
pn(W B ) = n e
2
i
qV CB
kT
qV CB
qV BE
q n e kT e kT
Jn =
(from Eq (7))
WB
pdx
(16)
(17)
2
i
(18)
Dn
Now, the total charge in the un-depleted base region is given by:
WB
(19)
Q B = qA pdx
o
S. Saha
Page 18
kT
kT
e
I n I s e
(20)
q A2 ni2 D n
where, I s =
QB
(21)
Page 19
IC Vs. VBE
Since BC junction is reversed biased the eqVBC/kT term is
negligible and we can show from (20) and (21):
2
q A2 D n ni2 qVkTBE
(22)
e
In =
QB
1.E-01
Expt
1.E-02
Ideal
1.E-03
2
JC (A/cm )
1.E-04
Decade
change
in JC
1.E-05
1.E-06
1.E-07
1.E-08
60mV
1.E-09
JS
1.E-10
0.0
0.2
0.4
VB E (V)
S. Saha
0.6
Slope = (kT/q)ln(10)
= 60 mV/(decade I) (@ 25 oC)
Relationship holds extremely well for IC
transistors over many decades of JC.
Generally, QB is obtained by integration
over the base region. Therefore, QB is
typically well controlled to ~ 1012 cm-2 to
give high IC for a given VBE.
Page 20
D. Current gain
Let us consider the factors that can contribute to base
current in a BJT:
1 Recombination in the neutral base region
2 Hole injection into the emitter
3 Recombination in the E-B space charge region.
E
Electrons flowing
emitter to collector
IE
Holes
into emitter
IC
Recombining electrons
IB
S. Saha
Page 21
pn
pno
np
QB
npo
pno
=0
Dn
(24)
2
dx
n
S. Saha
Page 22
qV BE
Ln
=
kT
(26)
n p n po e
W B
sinh
Ln
Substituting (26) in (23) we get the emitter (InE) and collector
(InC) e currents.
S. Saha
Page 23
1
coth
(@ x = 0)
e kT
I nE
Ln
Ln
qA D n n p qV BE
W B
o
=
1
csc
h
(@ x = WB ) (28)
e kT
I nC
Ln
Ln
The ratio of these two currents is defined as the base
transport factor and is given by:
(29)
T 1 WB2/2Ln2
S. Saha
Page 24
IC
I
T
T nE =
> 1600
I B I nE I nC 1 T
q AE ni2 W B qV BE
e kT 1
I B REC =
2 N A n
(30)
Page 25
np
pn
pn
np
pn
xE >> LpE
xE << LpE
The injected hole currents in each case come directly from the analysis
of long base and short base diodes (E denotes emitter properties):
D pE qV BE
e kT 1
x E >> L pE : I pE = qA n
N DE L pE
(31)
D pE qV BE
e kT 1
x E << L pE : I pE = qA n
N DE x E
(32)
2
i
2
i
S. Saha
Page 26
Emitter Efficiency
The emitter injection efficiency is defined as:
I pE
I
I
nE
nE
=
=
= 1 / 1 +
I nE + I pE I TOT
I nE
(33)
Page 27
injection
recombination
hole
injection
Page 28
(35)
Note:
This current flows in the EB circuit and does not directly affect IC.
Thus, as IREC becomes important, the ratio of IC/IB will change.
eqVBE/2kT dependence is important at low current levels.
+
+
I C I nE
I nE
I nE
1
N A W B D P W B N A W B x E qV BE
+
+
e 2 kT
2
N D x E D n 2 L n 2 D n ni o
1
S. Saha
(36)
Page 29
max
1020
1021
NDE (cm3)
Page 30
(38)
Page 31
J nE
2
qV BE
q D nB nib2
q D nB nib2 qV BE
e kT
e kT =
WB
QB
N AB ( x)dx
(39)
J pE
qV BE
q D nB nie2
q 2 D nB nie2 qV BE
e kT
e kT =
L pE
QE
N DE ( x)dx
(40)
Page 32
1
=
J pE
J nE
1+
2
pE ie
D n
DnB nib2
1
WB
pE
N AB ( x)dx
(41)
N DE ( x)dx
=
1+
1
=
J pE
J nE
1
D pE N AB WB kTEg
1+
e
DnB N DE L pE
(42)
Page 33
1
=
J pE
J nE
1
D pE N AB WB kTEg
1+
e
DnB N DE L pE
(43)
Page 34
Page 35
qAE D n ni2 qV BE
e kT 1
I nE =
N AW B
S. Saha
Page 36
S. Saha
Page 37