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Presentation Overview
y History, need of SiGe Technology
y Physics behind HBTs
y Bandgap Engineering
y SiGe Strained Layer Epitaxy
y SiGe HBT Fabrication: Selective-Epitaxial Growth
y Technology aspects
y Some applications of Si-Ge HBTs
y Future Trends and conclusions
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transistor(Si HBT).
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Low Power
High Linearity
Low Noise
High speed of operation for RF, analog, memory and digital circuits
Low cost
Why Si?
y Si is wonderfully abundant and can be easily purified.
y Si crystals can be grown in amazingly large, virtually defect
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free single crystals. (Large wafer size more ICs low cost)
Si can be controllably doped with both n-type and p-type.
The energy bandgap of Si is of moderate magnitude
(1.12eV at 300K)
Non Toxic and highly stable
Excellent thermal (allowing for efficient removal of dissipated
heat) and mechanical properties
Si material system.
is given by:
y In more physical terms it is written as:
y If a large is desired, the numerator should be as large as
desirable, but at the same time the doping and width of the
base must be large:
To avoid punch-through
y To have low base resistance
y Base width is kept low so that the delay caused by diffusion of
the minority carriers through the base is kept low
y
where
y The current amplification factor for the HBT can be defined
as:
where
is the difference in bandgap between the
emitter and base.
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engineering possible.
y When incorporated into the base of a bipolar transistor SiGe
gives a reduction in the potential barrier to electrons in the
emitter. The result is enhanced collector current and hence
enhanced gain.
less potential barrier increased collector current gain
y This enhanced gain can be traded for increased base doping
and decreased basewidth, and hence improved highfrequency performance.
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Technology Aspects
Some of the early pay-off in using the Si/SiGe HBT was its
ability to perform at very high speeds: e.g. 65 GHz
maximum oscillation frequency in IBMs earliest
production technology (BiCMOS 5HP).
y Since device switching at these speeds is not necessary for
the bulk of wireless circuits operating at frequencies from
900 MHz to 2.4 GHz, the usefulness of the SiGe HBT
comes at being able to trade this excess speed for
improvement in other device figures of merit, most notably
operation at lower power levels.
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Applications
The explosion of interest in SiGe heterojunction bipolar
technology is being driven in the first instance by the wireless
communications market.
y Wireless systems are revolutionizing both the communications
and computer industries, and providing a driving force for the
merging of these two industries into a single information industry.
y Most wireless applications tend to be in the 110 GHz frequency
range. Products include cordless phones, mobile phones, wireless
local area networks, TV, satellite communications and automotive
navigation and toll systems.
y A vast range of rf and mixed-signal circuits are possible with this
technology, such as low noise amplifiers, power amplifiers,
mixers, voltage controlled oscillators, synthesisers, and high speed
analogue to digital and digital to analogue converters.
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Applications continued
y A second application area where SiGe HBTs are finding
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References
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THANK YOU!!!
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