10/27/2014

Looking Inside Samsungs 3x nm Process Generation DDR3 SDRAM | Chipworks Blog

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January 31, 2011

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Looking Inside Samsungs 3x nm Process Generation DDR3 SDRAM

We recently acquired Samsungs latest DDR3 SDRAM, with package markings K4B2G0846D-HCH9. This part number lines up
with a press release from Samsung last year about their 2 Gb 3x-nm generation DRAMs. The first thing we did was measure
the die size. This chip is 35 sq mm, compared to the previous generation 48 nm Samsung 1Gb DDR3 SDRAM, which is 28.6 sq
mm. Clearly this 2 Gb die is much smaller than 2X the 48 nm 1 Gb die, so our assumption that we have a 3x nm part looks good
so far.

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Figure 1: Samsung 3x DDR3 SDRAM Die Photo

Next we did a bevel-section of the part to take a look at the cell array. We were surprised with what we found. The capacitors
are laid out in a square array instead of the more usual hexagonal pattern (see below), and the wordline (WL) and bitline (BL)
pitches are both about 96 nm. The usual method of determining DRAM node is to take half the minimum WL or BL pitch. That
places this DRAM at the 48 nm process node, the same as the previous Samsung generation (at 48 nm). So why does the die
size look like it should be a smaller technology? The answer lies in the cell.

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Figure 2: Plan-View TEM Image of Capacitors

For those who dont design DRAM, a short primer is in order.

DRAM uses a convention of describing cell size in terms of the minimum feature size, F. Historically DRAM cells used an 8F2
architecture. A diagram of an 8F2 cell is shown in Figure 3. This diagram shows that cells are only placed at the locations
where BLs and WLs cross. This allows for the use of a folded bitline architecture. This architecture uses a reference bitline that
is adjacent to the read bitline. This helps eliminate noise, since most noise will be common mode. In order to decrease cell
area companies came out with the first 6F2 cells in 2007. This 6F2 architecture is now used by all major players in the DRAM
market. Figure 4 shows the layout of this cell. Since more than half the possible cell locations are now filled, folded bitline is no
longer possible. Hence all companies have now moved to an open bitline architecture, despite inherent noise issues (which
we will not get into at this time). In a 6F2 architecture two-thirds of the WL/BL intersections are filled with storage cells.

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Looking Inside Samsungs 3x nm Process Generation DDR3 SDRAM | Chipworks Blog

Figure 3: 8F architecture

Figure 4: 6F architecture

Source: Nikkei Electronics Asia, January 2008

A 4F2 architecture is defined as having a memory cell at each and every possible location, that being each and every crossing
of WL and BL. The simplified layout architecture would be the same as the 6F2 architecture above, but with the cell being 2F X
2F.
Back to the device in question.
The first piece of evidence
The 48 nm SDRAM has a cell size of 0.014 sq m and this new SDRAM has a cell size of about 0.0092 sq m. If we take the
half-WL pitch as the minimum feature size (F), we get an F of 48 nm for this process. The cell area of 0.0092 sq m is exactly 4 x
F squared, or 4F2. Is this the worlds first 4F2 cell? From this point of view it certainly appears so. The cell is four times the size
of the minimum feature, squared.

Figure 5: DRAM Roadmap Source: Nikkei Techon

The second piece of evidence

If a 4F2 architecture is defined as having a memory cell at each and every possible location, and what we see on this Samsung
DRAM seems to do exactly that, then maybe we are looking at the first 4F architecture. Lets look just a bit closer to be sure.
The smoking gun
We compared the poly and active layout under the array between the 48 nm SDRAM and this new one. The images below

show that they both have very similar layouts. The angle of the active silicon (diffusion) direction is about the same. The active
areas are ovals. Each diffusion has two wordlines crossing it. There is a gap in all the active stripes, such that a third WL does
not cross active on this diagonal active stripe.

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Looking Inside Samsungs 3x nm Process Generation DDR3 SDRAM | Chipworks Blog

Figure 6: Samsung K4B1G0846F 48 nm 1 Gb DDR3 SDRAm,

Poly and Active Area Image under Cell Array

Samsung K4B2G0846D 2 Gb DDR3 SDRAM, Poly Remnants

and Active Areas under Cell Array

This new DRAM therefore has a very similar cell layout to the previous one. In both cases the wordlines do not have a transistor
under them at every possible location that a transistor would fit. Rather, one of every three possible transistor locations is filled
with a break in the diffusion stripe. In our opinion this is a critical factor in identifying a 6F cell, that in a 6F architecture 2/3 of
the WL/BL intersections are filled with storage cells. As we noted above, a 4F cell really should have transistors at every
possible transistor location. When we look at the pitch of the diffusions in this new DRAM, we see it is much tighter. In fact,
along the WL direction the diffusion pitch is now 64 nm, whereas in the 48 nm SDRAM this pitch was 96 nm. So if you take half
the minimum pitch in the chip as the node, this is a 32-nm part (ITRS 2009 still defines F as half the contacted M1 pitch, which
would be 48 nm).
Conclusion
So, do we have a 32 nm node, and a 6F architecture? Maybe. The only issue is that if we use 32 nm as F, then when we plug
that into the 6F equation we get 0.0061 um as the cell size. However, the cell size is actually 0.0092 um. If we use that
number and use the equation to calculate F we find that F=39nm. So do we call this a 32 nm or a 39 nm node? It depends
how you calculate it either way its a 3x! So, although its a little disappointing that I dont think we can announce the worlds
first 4F DRAM, we can announce the worlds smallest node, 32 or 39 nm, production 6F DRAM. Samsung have had to put in a
few process tweaks to squeeze the cells into the much smaller area, mostly at the transistor and STI level. Were still looking at
it, so we may not have the whole story yet, but some of what weve seen so far is:
Ti-? (likely TiN)-gate buried wordline transistors
STI filled with nitride in the array
Bitlines at the same level as peripheral transistors.
See available Circuit Analysis and Process Analysis Reports on the Samsung K4B2G0846D-HCH9.

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Looking Inside Samsungs 3x nm Process Generation DDR3 SDRAM | Chipworks Blog

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