J. Pure Appl. & Ind. Phys. Vol.

2 (3A), 374-376 (2012)

Fractomechanoluminescence Produced During Impulsive

Deformation of III-V Semiconductor
SAMEER THAKER
Department of Physics,
Govt. Nagarjuna P.G. College of Science, Raipur, C.G., INDIA.
ABSTRACT
When III-V semiconductor fractured impulsively by the impact of
a moving piston, then initially the ML intensity increases linearly
with time, attains a pick value Im at a particular time tm, and later
on it decreases with time. The value of time tm decreases with
increasing value of impact velocity, in which tm is proportional to
logarithm of the inverse of vo, the value of Im increases linearly
with vo, and the value of IT initially increases linearly with vo and
then it attains a saturation value for higher value of vo.The values
of tm increases with the logarithm of the thickness of crystals and
the value of the Im increases linearly with the area of cross section
of the crystals and the value of IT increases linearly with the
volume of the crystals.
Keywords: Fractomechanoluminescence, III-V Semiconductor.

INTRODUCTION
To date, the mechanisms of ML in
elemental and III-V semiconductors have
not been studied in detail. For the ML
excitation in elemental and III-V
semiconductors, the following models may
be proposed: (i) charging of newly created
surfaces, (ii) thermal generation of charge
carriers. (iii) recombination of fracturegenerated defects, and (iv) formation of
crack-induced localized states.
Theory

The rate of generations g1, g2 and g3,

of electrons in the conduction band, may be
expressed as


 




(1)

   

(2)




(3)

  

The rate of creation of new surfaces

is given by (Chandra et al. 2012)
Journal of Pure Applied and Industrial Physics Vol.2, Issue 3A, 1 July, 2012, Pages (286-402)

375



Sameer Thaker, J. Pure Appl. & Ind. Phys. Vol.2 (3A), 374-376 (2012)

   
 



exp   


 


1  exp


(4)

Eqs. (1), (2) and (3) can be expressed as:

 
 




 

 exp


  


1
  
 exp


    
 

 
  exp     1  exp

    

 




  exp

(5)


  

(6)


 


1
     exp

(7)

where
 = a constant,  = proportionality
constant,  = volume of crystals
 = an exponent,  = an exponent,  =a
constant,
=an exponent

= an exponent,
= an exponent,  =
initial velocity of piston
 = thickness of the sample,


  = rate-constant for the relaxation of

band and shallow traps, surface states and

defect centres an any time t.

moving piston
 = time constant for the relaxation of
moving piston
and,   rate constant for the decrease of
average surface area produced by the
movement of single crack
If !
, ! and ! are the rate
constants for the recombination of the
electrons then we can written as

If '
 , ' and ' are the efficiency

for the electron-hole radiative recombination
for the signals A, B, and C.






 !

(8)





  !


(9)





  !


(10)




   
exp   !

(11)




   
exp   !


(12)




   
exp   !


(13)

 
 


exp



exp  

(14)

     
exp 

    

    

  

 exp  

(15)

and,
     

where

,
 and
 are the changes in
the number of electrons in the conduction

    

  

 exp   exp 

(16)

For
!
( , ! (  and ! ( 
Eqs. (14), (15) and (16) can be expressed as
)
 

      

Journal of Pure Applied and Industrial Physics Vol.2, Issue 3A, 1 July, 2012, Pages (286-402)

(17)

Sameer Thaker, J. Pure Appl. & Ind. Phys. Vol.2 (3A), 374-376 (2012)
) 

      

) 

      

(18)

)  

    

(21)

(19)

)  

    

(22)

It is evident from Eqs. (17), (18) and (19)

that after the fracture )
 , ) and ) should
increase linearly with time .
The ML intensity ) corresponding to the
peak of ML intensity versus time curve can
be given by
)


 

    

  

  

(20)

  

 


The decay of ML intensity may be expressed

as


  
 



exp
    (23)

     
 exp    

(24)

     
 exp    

(25)

The ML intensity versus time curve can be

expressed as

exp   exp
 

  

exp   exp  

exp   exp  . 

  
 
      

  

(26)

where  is given by


376



 ! "#

(27)

To date, no experimental studies have been

made on the impulsive excitation of ML in
elemental and III-V semiconductors.
CONCLUSION
When a III-V semiconductors is
fractured impulsively by the impact of a
moving piston, then initially the ML
intensity increases linearly with time, attains
a peak value Im at a particular time tm, and
later on it decreases with time. The value of
time tm decreases with increasing value of
the impact velocity, in which tm is
proportional to logarithm of the inverse of

v0, the value of Im increases linearly with v0,

and the value of IT initially increases linearly
with v0 and then it attains a saturation value
for higher values of v0.The values of tm
increases with the logarithm of the thickness
of crystals and the value of Im increases
linearly with the area of cross-section of the
crystals and the value of IT increases linearly
with the volume of the crystals. To date, no
experimental studies have been made on the
impulsive excitation of ML in elemental and
III-V semiconductors.
REFERENCE
1. Chandra, B.P., Chandra, V.K., Jha, P.,
Patel, Rashmi, Shende, S.K., Thaker, S.,
Baghel, R.N., J. Lumin. 132, 2012-2022
(2012).

Journal of Pure Applied and Industrial Physics Vol.2, Issue 3A, 1 July, 2012, Pages (286-402)