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INTRODUCTION
When ionizing radiations (X
rays, -rays, particles and particles) is
incident upon an insulator or semiconductor
and is heated, than the energy stored in the
phosphor, as a result of irradiation process,
liberates in the form of visible light in
addition to the normal thermal radiation. The
additional visible light emitted during first
heating is called thermo luminescence.
Reheating the phosphor, immediately after it
gives rise to only normal thermal emission.
Journal of Pure Applied and Industrial Physics Vol.4, Issue 4, 31 October, 2014, Pages (149-167)
150
Manas Kumar Sahu, et al., J. Pure Appl. & Ind. Phys. Vol.4 (4), 149-154 (2014)
Journal of Pure Applied and Industrial Physics Vol.4, Issue 4, 31 October, 2014, Pages (149-167)
Manas Kumar Sahu, et al., J. Pure Appl. & Ind. Phys. Vol.4 (4), 149-154 (2014) 151
provides the luminescence so
nc
E
S
E
exp
I = no S exp
exp
dT
kT
kT
T
(1)
where
is the probability that
recombination will occur radiatively.
The first order characteristic that
Tm independent on n 0 . The heating rate
must change Tm in such a way that the
dm
= A m mn c
(7)
dt
where n c is the concentration of free
I( t ) =
electrons.
The kinetics of the process in more
general terms and to see how the simplified
cases of first order, second order and more
general case emerge in above equation.
These are related to the relation
between the concentration of electrons in the
conduction band and in traps and to the rate
of change of these concentrations namely
E
Sk
(2)
= Tm2 exp
E
kTm
The maximum intensity I m is given by
Im
E
= Sn o exp
kTm
(3)
kT
t
dt
exp S
exp
kT (t )
to
T(t)
(4)
kT
1
dT
E
exp S T
exp
dT
To dt
kT
(5)
(8)
I =
dn
E
= S' n b exp
dt
kT
(9)
E
I ( T ) = n o2 S ' exp
kT
We discuss electron
recombination centers.
dn c
dn
<<
, n c << n
dt
dt
(6)
traps
and
(b 1) S
exp( E / kT )dT + 1
To
where S = S ' n o
b /(b 1)
b 1
hole
The equation for mixed order kinetics is
Journal of Pure Applied and Industrial Physics Vol.4, Issue 4, 31 October, 2014, Pages (149-167)
(10)
152
I (t ) =
Manas Kumar Sahu, et al., J. Pure Appl. & Ind. Phys. Vol.4 (4), 149-154 (2014)
dn
E
E
= S ' n 2 exp
+ S 'c1n exp
dt
kT
kT
(11)
{A m ( n + c1 ) + A n ( N n)}
Tm
S / exp( E / kT ) dT
To
(14)
S
E
E
exp
exp
dT
I = no S exp
kT
kT
T
E
= S exp
kTm
E
I m = Sn o exp
kTm
E
kTm2
t
E
E
I( t ) = n oS exp
dt
exp Sto exp
kT
kT( t )
Journal of Pure Applied and Industrial Physics Vol.4, Issue 4, 31 October, 2014, Pages (149-167)
Manas Kumar Sahu, et al., J. Pure Appl. & Ind. Phys. Vol.4 (4), 149-154 (2014) 153
E
I (T ) = no S exp
kT
1
dT
E
exp S T
exp
dT
To dt
kT
E
I = S' n 2 exp
kT
REFERENCES
T E
dT
kT To kT
E n oS
n o2S ' exp
'
kT o
kT
I (t ) = sno exp( E / kT )
(b 1) S
exp( E / kT )dT + 1
To
I( t ) =
b /(b 1)
dn
E
= S exp
F( n )
dt
kT
where
F( n) =
SA n n( n + c1 )
{A m ( n + c1 ) + A n ( N n)}
E
I(T ) n o2S' exp
kT
Tm
To
S / exp( E / kT) dT
Journal of Pure Applied and Industrial Physics Vol.4, Issue 4, 31 October, 2014, Pages (149-167)
154
Manas Kumar Sahu, et al., J. Pure Appl. & Ind. Phys. Vol.4 (4), 149-154 (2014)
Journal of Pure Applied and Industrial Physics Vol.4, Issue 4, 31 October, 2014, Pages (149-167)