Professional Documents
Culture Documents
I. Chen,Wai-Kai, 1936
TK7874.75.V573 1999
621.395dc21
99-047682
CIP
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Preface
Purpose
The purpose of The VLSI Handbook is to provide in a single volume a comprehensive reference work
covering the broad spectrum of VLSI technology. It is written and developed for the practicing electrical
and computer engineers in industry, government, and academia. The goal is to provide the most upto-date information in IC technology, devices and their models, circuit simulations, amplifiers, logic
design, memory, registers and system timing, microprocessor and ASIC, test and testability, design
automation, and design languages. The handbook is not an all-encompassing digest of everything taught
within an electrical and computer engineering curriculum on VLSI technology. Rather, it is the engineer's
first choice in looking for a solution. Therefore, full references to other sources of contributions are
provided. The ideal reader is a B.S.-level engineer with a need for a one-source reference to keep abreast
of new techniques and procedures as well as review standard practices.
Background
The handbook stresses fundamental theory behind professional applications. In order to do so, it is
reinforced with frequent examples. Extensive development of theory and details of proofs have been
omitted. The reader is assumed to have a certain degree of sophistication and experience. However, brief
reviews of theories, principles and mathematics of some subject areas are given. These reviews have been
done concisely with perception. The handbook is not a textbook replacement, but rather a reinforcement
and reminder of material learned as a student. Therefore, important advancement and traditional as well
as innovative practices are included.
Since the majority of professional electrical engineers graduated before powerful personal computers
were widely available, many computational and design methods may be new to them. Therefore,
computers and software use are thoroughly covered. Not only does the handbook use traditional references to cite sources for the contributions, it also contains all relevant sources of information and tools
that would assist the engineer in performing his/her job. This may include sources of software, databases,
standards, seminars, conferences, etc.
Organization
Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and
a broad range of practice. To encompass such a wide range of knowledge, the handbook focuses on the
key concepts, models, and equations that enable the electrical or computer engineer to analyze, design
and predict the behavior of very large-scale integrated circuits. While design formulas and tables are
listed, emphasis is placed on the key concepts and theories underlying the applications.
The information is organized into 13 major sections, which encompass the field of VLSI technology.
Each section is divided into chapters, each of which was written by a leading expert in the field to enlighten
and refresh knowledge of the mature engineer, and to educate the novice. Each chapter contains introductory material, leading to the appropriate applications, and references. The references provide a list of
useful books and articles for following reading.
Acknowledgments
The compilation of this book would not have been possible without the dedication and efforts of the
Editorial Board of Advisors, the section editors, the publishers, and most of all the contributing authors.
I wish to thank them all and also my wife, Shiao-Ling, for her patience and understanding.
Wai-Kai Chen
Editor-in-Chief
Editor-in-Chief
Advisory Board
Contributors
Ramachandra Achar
Victor Boyadzhyan
Daniel A. Connors
Carleton University
Ottawa, Ontario, Canada
University of Illinois
Urbana, Illinois
James H. Aylor
Charles E. Chang
Donald Cottrell
University of Virginia
Charlottesville, Virginia
R. Jakob Baker
Wai-Kai Chen
University of Idaho
Boise, Idaho
University of Illinois
Chicago, Illinois
David L. Barton
Kuo-Hsing Cheng
Intermetrics, Inc.
Vienna, Virginia
Andrea Baschirotto
Universit di Pavia
Pavia, Italy
Charles R. Baugh
C. R. Baugh and Associates
Bellevue, Washington
J. Bhasker
Cadence Design Systems
Allentown, Pennsylvania
David Blaauw
Motorola, Inc.
Austin, Texas
Marc Borremans
Katholieke Universiteit Leuven
Leuven-Heverlee, Belgium
Tamkang University
Tamsui, Taipei Hsien, Taiwan
John D. Cressler
Auburn University
Auburn, Alabama
Sorin Cristoloveanu
Institut National Polytechnique
de Grenoble
Grenoble, France
Bram De Muer
Katholieke Universiteit Leaven
Leuven-Heverlee, Belgium
Geert A. De Veirman
Silicon Systems, Inc.
Tustin, California
David J. Comer
Stanford University
Stanford, California
Allen M. Dewey
Donald T. Comer
Duke University
Durham, North Carolina
Abhijit Dharchoudhury
Peter J. Hesketh
Dimitri Kagaris
Motorola, Inc.
Austin, Texas
Karl Hess
University of Illinois
Urbana, Illinois
Steve M. Kang
Donald B. Estreich
Hewlett-Parkard Company
Santa Rosa, California
University of Illinois
Urbana, Illinois
Nick Kanopoulos
John W. Fattaruso
Texas Instruments,
Incorporated
Dallas, Texas
Charles Ching-Hsiang
Hsu
National Tsing-Hua University
Hsinchu, Taiwan
Tanay Karnik
Eby G. Friedman
University of Rochester
Rochester, New York
Jen-Sheng Hwang
National Science Council
Hsinchu, Taiwan
Stantanu Ganguly
Intel Corp.
Austin, Texas
Yosef Gavriel
Virginia Polytechnic Institute
and State University
Blacksburg, Virginia
Intel Corporation
Hillsboro, Oregon
Yasuhiro Katsumata
Thad Gabara
Lucent Technologies
Murray Hill, New Jersey
Wen-mei Hwu
University of Illinois
Urbana, Illinois
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Pankaj Khandelwal
Kazumi Inoh
Toshiba Corporation
Isogo-ku, Yokohama, Japan
University of Illinois
Chicago, Illinois
John M. Khoury
Hidemi Ishiuchi
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Lucent Technologies
Murray Hill, New Jersey
Heechul Kim
Rajesh K. Gupta
Hiroshi Iwai
Hideki Kimijima
Jan V. Grahn
University of California
Irvine, California
Sumit Gupta
University of California
Irvine, California
Mohammed Ismail
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Vikram Iyengar
Isik C. Kizilyalli
University of Illinois
Urbana, Illinois
Johan Janssens
Katholieke Universiteit Leuven
Leuven-Heverlee, Belgium
Robert H. Klenke
Martin Margala
Michel S. Nakhla
Virginia Commonwealth
University
Richmond, Virginia
University of Alberta
Edmonton, Alberta, Canada
Carleton University
Ottawa, Ontario, Canada
Samuel S. Martin
Zainalabedin Navabi
Ivan S. Kourtev
Lucent Technologies
Murray Hill, New Jersey
Northeastern University
Boston, Massachusetts
Erik A. McShane
Philip G. Neudeck
University of Illinois
Chicago, Illinois
Shin-ichi Minato
Kwok Ng
University of Idaho
Moscow, Idaho
Lucent Technologies
Murray Hill, New Jersey
Chi-Hung Lin
Sunderarajan S. Mohan
University of Pittsburgh
Pittsburgh, Pennsylvania
Thomas H. Lee
Stanford University
Stanford, California
Harry W. Li
John W. Lockwood
Washington University
St. Louis, Missouri
Stephen I. Long
University of California
Santa Barbara, California
Flavio Lorenzelli
ST Microelectronics, Inc.
San Diego, California
Ashraf Lotfi
Lucent Technologies
Murray Hill, New Jersey
Joseph W. Lyding
University of Illinois
Urbana, Illinois
Hideaki Nii
Stanford University
Stanford, California
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Tatsuya Ohguro
Hisayo S. Momose
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Mikael stling
Eiji Morifuji
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Alice C. Parker
Toyota Morimoto
Toshiba Corporation
Isogo-ku, Yokohama, Japan
University of Southern
California
Los Angeles, California
Saburo Muroga
Alison Payne
University of Illinois
Urbana, Illinois
Imperial College
University of London
London, England
Akio Nakagawa
Toshiba Corporation
Saiwai-ku, Kawasaki, Japan
Yuichi Nakamura
NEC Corporation
Miyamae-ku, Kawasaki, Japan
Massoud Pedram
University of Southern
California
Los Angeles, California
J. Gregory Rollins
Naofumi Takagi
Wayne Wolf
Nagoya University
Nagoya, Japan
Princeton University
Princeton, New Jersey
Elizabeth M. Rudnick
Donald C. Thelen
Chung-Yu Wu
University of Illinois
Urbana, Illinois
Analog Interfaces
Bozeman, Montana
Kirad Samavati
Chris Toumazou
Stanford University
Stanford, California
Imperial College
University of London
London, England
Rolf Schaumann
Portland State University
Portland, Oregon
Spyros Tragoudas
Southern Illinois University
Carbondale, Illinois
Yuh-Kuang Tseng
Krishna Shenai
University of Illinois
Chicago, Illinois
Meera Venkataraman
Bing J. Sheu
Avant! Corporation
Los Angeles, California
Suhrid A. Wadekar
Bang-Sup Song
IBM Corp.
Hopewell Junction, New York
University of California
La Jolla, California
Chorng-kuang Wang
Michiel Steyaert
R. F. Wassenaar
Haruyuki Tago
University of Twente
Enschede, The Netherlands
Toshiba Semiconductor
Company
Saiwai-ku, Kawasaki-shi, Japan
Kazuo Yano
Hitachi Ltd.
Kokubunji, Tokyo, Japan
Kung Yao
University of California
Los Angeles, California
Ko Yoshikawa
NEC Corporation
Fuchu, Tokyo, Japan
Kuniyoshi Yoshikawa
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Takashi Yoshitomi
Toshiba Corporation
Isogo-ku, Yokohama, Japan
Min-shueh Yuan
National Taiwan University
Taipei, Taiwan
C. Patrick Yue
Stanford University
Stanford, California
Contents
SECTION I
Introduction
Contemporary VLSI Systems
Emerging VLSI Systems
Alternative Technologies
Introduction
CMOS Technology
BiCMOS Technology
Future Technology
Summary
Bipolar Technology
3.1
3.2
3.3
3.4
3.5
VLSI Technology
Introduction
Bipolar Process Design
Conventional Bipolar Technology
High-Performance Bipolar Technology
Advanced Bipolar Technology
Introduction
Fabrication of SOI Wafers
Generic Advantages of SOI
SOI Devices
FullyDepleted SOI Transistors
Partially Depleted SOI Transistors
ShortChannel Effects
SOI Challenges
Conclusion
Sorin Cristoloveanu
SiGe Technology
5.1
5.2
5.3
5.4
5.5
SiC Technology
6.1
6.2
6.3
6.4
6.5
6.6
6.7
Akio Nakagawa
Introduction
Intelligent Power ICs
High-Voltage Technology
High-Voltage Metal Interconnection
High-Voltage SOI Technology
High-Voltage Output Devices
Sense and Protection Circuit
Examples of High-Voltage SOI Power ICs with LIGBT Outputs
SOI Power ICs for System Integration
High-Temperature Operation of SOI Power ICs
10
Ashraf Lotfi
Magnetic Components
Air Core Inductors
Resistors
Capacitors
Power IC Technologies
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
8.10
Philip G. Neudeck
Introduction
Fundamental SiC Material Properties
Applications and Benefits of SiC Electronics
SiC Semiconductor Crystal Growth
SiC Device Fundamentals
SiC Electronic Devices and Circuits
Further Recommended Reading
Passive Components
7.1
7.2
7.3
7.4
John D. Cressler
Introduction
SiGe Strained Layer Epitaxy
The SiGe Heterojunction Bipolar Transistor (HBT)
The SiGe Heterojunction Field Effect Transistor (HFET)
Future Directions
Introduction
Microscopic Noise
Device Noise
Chip Noise
Future Trends
Conclusions
Micromachining
Peter J. Hesketh
10.1 Introduction
10.2 Micromachining Processes
10.3
10.4
10.5
10.6
10.7
10.8
10.9
10.10
10.11
11
Microelectronics Packaging
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
11.10
11.11
12
Introduction
Packaging Hierarchy
Package Parameters
Packaging Substrates
Package Types
Hermetic Packages
Die Attachment Techniques
Package Parasitics
Package Modeling
Packaging in Wireless Applications
Future Trends
13
Introduction
Multi-Chip Module Technologies
Materials for HTCC Aluminum Packages
LTCC Substrates
Aluminum Nitride
Materials for Multi-layered AlN Packages
Thin Film Dielectrics
Carrier Substrates
Conductor Metallization
Choosing Substrate Technologies and Assembly Techniques
Assembly Techniques
Summary
Introduction
Post-Metal Forming Gas Anneals in Integrated Circuits
Impact of Hot Electron Effects on CMOS Development
The Hydrogen/Deuterium Isotope Effect and CMOS Manufacturing
Summary
SECTION II
14
15
Introduction
Physical Characteristics and Properties of the BJT
Basic Operation of the BJT
Use of the BJT as an Amplifier
Representing the Major BJT Effects by an Electronic Model
Other Physical Effects in the BJT
More Accurate BJT Models
Heterojunction Bipolar Junction Transistors
Integrated Circuit Biasing Using Current Mirrors
The Basic BJT Switch
High-Speed BJT Switching
Simple Logic Gates
Emitter-Coupled Logic
Introduction
Fractal Capacitors
Spiral Inductors
On-Chip Transformers
SECTION III
Circuit Simulations
17
David J. Comer
16
J. Gregory Rollins
Introduction
Purpose of Simulation
Netlists
Formulation of the Circuit Equations
Modified Nodal Analysis
Active Device Models
Types of Analysis
Verilog-A
Fast Simulation Methods
Commercially Available Simulators
Michel S. Nakhla
18
SECTION IV
19
Massoud Pedram
Introduction .
Software-Level Power Estimation
Behavioral-Level Power Estimation
RT-Level Power Estimation
Gate-Level Power Estimation
Transistor-Level Power Estimation
Conclusion
Amplifiers
19.1 Introduction
19.2 Biasing Circuits
19.3 Amplifiers
20
21
High-Frequency Amplifiers
21.1
21.2
21.3
21.4
21.5
21.6
21.7
22
Geert A. De Veirman
Introduction
Single-Transistor Amplifiers
Differential Amplifiers
Output Stages
Bias Reference
Operational Amplifiers
Conclusion
Introduction
The Current Feedback Op-Amp
RF Low-Noise Amplifiers
Optical Low-Noise Preamplifiers
Fundamentals of RF Power Amplifier Design
Applications of High-Q Resonators in IF-Sampling Receiver Architectures
Log-Domain Processing
R. F. Wassenaar,
22.3
22.4
22.5
22.6
23
24
Saburo Muroga
Saburo Muroga
25
26
27
Saburo Muroga
Minimal Sums
Derivation of Minimal Sums by Karnaugh Map
Derivation of Minimal Sums for a Single Function by Other Means
Prime Implicates, Irredundant Conjunctive Forms, and Minimal Products
Derivation of Minimal Products by Karnaugh Map
Basic Concepts
Construction of BDD Based on a Logic Expression
Data Structure
Ordering of Variable for Compact BDDs
Remarks
28
Saburo Muroga
Introduction
Flip-Flops and Latches
Sequential Networks in Fundamental Mode
Malfunctions of Asynchronous Sequential Networks
Different Tables for the Description of Transitions of Sequential Networks
29
30
Saburo Muroga
31
32
33
34
35
Saburo Muroga
Emitter-Coupled Logic
35.1
35.2
35.3
35.4
Ko Yoshikawa
Saburo Muroga
Introduction
Standard ECL Logic Gates
Modification of Standard ECL Logic Gates with Wired Logic
ECL Series-Gating Circuits
36
CMOS
36.1
36.2
36.3
36.4
36.5
36.6
37
Saburo Muroga
Pass Transistors
37.1 Introduction
37.2 Electronic Problems of Pass Transistors
37.3 Top-down Design of Logic Functions with Pass-Transistor Logic
38
39
Multipliers
39.1
39.2
39.3
39.4
39.5
40
Introduction
Sequential Multiplier
Array Multiplier
Multiplier Based on Wallace Tree
Multiplier Based on a Redundant Binary Adder Tree
Dividers
40.1
40.2
40.3
40.4
40.5
41
Introduction
Addition in the Binary Number System
Serial Adder
Ripple Carry Adder
Carry Skip Adder
Carry Look-Ahead Adder
Carry Select Adder
Carry Save Adder
Introduction
Subtract-And-Shift Dividers
Higher Radix Subtract-And-Shift Dividers
Even Higher Radix Dividers with a Multiplier
Multiplicative Dividers
Saburo Muroga
41.1 Introduction
41.2 Full-Custom Design Sequence of a Digital System
42
Saburo Muroga
42.3
42.4
42.5
42.6
43
Gate Arrays
Saburo Muroga
44
45
Saburo Muroga
Introduction
Basic Structures of FPGAs
Various Field-Programmable Gate Arrays
Features of FPGAs
Saburo Muroga
45.1 Introduction
45.2 Polycell Design Approach
45.3 Hierarchical Design Approach
46
SECTION VI
47
48
System Timing
47.1
47.2
47.3
47.4
47.5
Introduction
Synchronous VLSI Systems
Synchronous Timing and Clock Distribution Networks
Timing Properties of Synchronous Storage Elements
A Final Note
Appendix
ROM/PROM/EPROM
Jen-Sheng Hwang
48.1 Introduction
48.2 ROM
48.3 PROM
49
Saburo Muroga
Introduction
Design Approaches with Off-the-Shelf Packages
Full-and Semi-Custom Design Approaches
Comparison of All Different Design Approaches
SRAM
Yuh-Kuang Tseng
50
Embedded Memory
50.1
50.2
50.3
50.4
50.5
50.6
51
Flash Memories Rick Shih-Jye Shen, Frank Ruei-Ling Lin, Amy Hsiu-Fen
Chou, Evans Ching-Song Yang, and Charles Ching-Hsiang Hsu
51.1
51.2
51.3
51.4
51.5
51.6
51.7
51.8
52
Introduction
Review of Stacked-Gate Non-volatile Memory
Basic Flash Memory Device Structures
Device Operation
Variations of Device Structure
Flash Memory Array Structures
Evolution of Flash Memory Technology
Flash Memory System
53
Chung-Yu Wu
Introduction
Merits and Challenges
Technology Integration and Applications3,5
Design Methodology and Design Space3,5
Testing and Yield3,5
Design Examples
Kuo-Hsing Cheng
Introduction
Basic DRAM Architecture
DRAM Memory Cell
Read/Write Circuit
Synchronous (Clocked) DRAMs
Prefetch and Pipelined Architecture in SDRAMs
Gb SDRAM Bank Architecture
Multi-level DRAM
Concept of 2-bit DRAM Cell
Martin Margala
Introduction
Read-Only Memory (ROM)
Flash Memory
Ferroelectric Memory (FeRAM)
Static Random-Access Memory (SRAM)
Dynamic Random-Access Memory (DRAM)
Conclusion
SECTION VII
54
55
Introduction
Technology
The Receiver
The Synthesizer
The Transmitter
Towards Fully Integrated Transceivers
Conclusions
PLL Circuits
57.1
57.2
57.3
57.4
58
Introduction
Basic Theory of Operation
Alternative Sigma-Delta Architectures
Filtering for Sigma-Delta Modulators
Circuit Building Blocks
Practical Design Issues
Summary
57
Bang-Sup Song
Introduction
ADC Design Arts
ADC Architectures
ADC Design Considerations
DAC Design Arts
DAC Architectures
DAC Design Considerations
56
Analog Circuits
Introduction
PLL Techniques
Building Blocks of the PLL Circuit
PLL Applications
Continuous-Time Filters
58.1
58.2
58.3
58.4
58.5
John M. Khoury
Introduction
State-Variable Synthesis Techniques
Realization of VLSI Integrators
Filter Tuning Circuits
Conclusion
59
Switched-Capacitor Filters
59.1
59.2
59.3
59.4
59.5
59.6
59.7
59.8
59.9
SECTION VIII
60
63
Tanay Karnik
Introduction
Layout Problem Description
Manufacturing
Chip Planning
Architecture
63.1
63.2
63.3
63.4
Vikram Iyengar
Introduction
Design Verification Environment
Random and Biased-Random Instruction Generation
Correctness Checking
Coverage Metrics
Smart Simulation
Wide Simulation
Emulation
Conclusion
Abhijit Dharchoudhury,
Introduction
Static Timing Analysis
Noise Analysis
Power Grid Analysis
62
61
Andrea Baschirotto
Introduction
Sampled-Data Analog Filters
The Principle of SC Technique
First-Order SC Stages
Second-Order SC Circuit
Implementation Aspects
Performance Limitations
Compensation Technique (Performance Improvements)
Advanced SC Filter Solutions
Introduction
Types of Microprocessors
Major Components of a Microprocessor
Instruction Set Architecture
64
ASIC Design
64.1
64.2
64.3
64.4
64.5
64.6
64.7
64.8
64.9
64.10
64.11
64.12
64.13
64.14
64.15
64.16
65
Introduction
FPGA Structures
Logic Synthesis
Look-up Table (LUT) Synthesis
Chortle
Two-Step Approaches
Conclusion
SECTION IX
66
Introduction
Design Styles
Steps in the Design Flow
Hierarchical Design
Design Representation and Abstraction Levels
System Specification
Specification Simulation and Verification
Architectural Design
Logic Synthesis
Physical Design
I/O Architecture and Pad Design
Tests After Manufacturing
High-Performance ASIC Design
Low Power Issues
Reuse of Semiconductor Blocks
Conclusion
Nick Kanopoulos
67
Dimitri Kagaris
68
Spyros Tragoudas
69
Materials
69.1
69.2
69.3
69.4
70
71
Stephen I. Long
Introduction
Compound Semiconductor Materials
Why III-V Semiconductors?
Heterojunctions
Introduction
Unifying Principle for Active Devices: Charge Control Principle
Comparing Unipolar and Bipolar Transistors
Typical Device Structures
Stephen I. Long
71.1 Introduction
71.2 Static Logic Design
71.3 Transient Analysis and Design for Very-High-Speed Logic
72
SECTION XI
73
74
Design Automation
Introduction
Functional Requirements of Framework
IMEDA System
Formal Representation of Design Process
Execution Environment of the Framework
Implementation
Conclusion
Introduction
System Specification
System Partitioning
Scheduling and Allocating Tasks to Processing Modules
Allocating and Scheduling Storage Modules
74.6
74.7
74.8
74.9
74.10
75
76
Introduction
The ADEPT Design Environment
A Simple Example of an ADEPT Performance Model
Mixed-Level Modeling
Conclusions
Introduction
Uses of Microprocessors
Embedded System Architectures
Hardware/Software Co-Design
Donald Cottrell
Introduction
Design Automation An Historical Perspective
The Future
Summary
SECTION XII
79
James H. Aylor
78
Introduction
The Two HDLs
The Three Different Domains of Synthesis
RTL Synthesis
Modeling a Three-State Gate
An Example
Behavioral Synthesis
Conclusion
77
SECTION XIII
80
Design Languages
80.1
80.2
80.3
80.4
80.5
80.6
80.7
80.8
80.9
81
Design Languages
David L. Barton
Introduction
Objects and Data Types
Standard Logic Types
Concurrent Statements
Sequential Statements
Simultaneous Statements
Modular Designs
Simulation
Test Benches
Elements of Verilog
Basic Component Descriptions
A Complete Design
Controller Description
Gate and Switch Level Description
Test Bench Descriptions
Summary