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PowerDissipationinInverterCircuits
Staticpowerdissipation(Ps)dueto
leakagecurrents
othercurrentdrawncontinuouslyfromthepowersupply
Dynamicpowerdissipation(Pd)duetochargingand
dischargingloadcapacitance
Shortcircuitpowerdissipation(Psc)duringthefinite
riseandfalltimesofinput
P=Ps+Pd+Psc
CMOSInverterStaticPower
NostaticcurrentinCMOSaslongasVin <VTN orVin >VDD +VTP
Leakagecurrent
isdeterminedbytheofftransistorinfluencedby
transistorwidth
supplyvoltage
MOSthresholdvoltage
Leakage(Static)PowerConsumption
DIBL
VDDIleakage
Subthresholdleakage
Drain(diode)leakage
Gateleakage
Subthresholdcurrentisthedominantfactor.
Allleakagecurrentincreaseexponentiallywith
temperature!
4
DynamicPowerDissipation
VOH
VOL
Vin,VOut
T/2
Pd
1
v t i t dt
T 0
T2
T
1
2
5
DynamicPowerDissipation
dVout
iDN t CL
dt
T2
dVout
1
Pd vout t CL
dt
T 0
dVout
iDP t CL
dt
T
dVout
dt VDD vout t CL
dt
T
2
dt
VDD
0
1
Pd CL vout t dVout CL VDD vout t dVout
T VDD
0
VDD
2 0
2
Vout
Vout
1
Pd CL
CL VDDVout
2 V
2 0
T
DD
Pd
1
2
CLVDD
T
Pd C V
2
L DD
f
6
ShortCircuitPowerConsumption
Duringswitching
Finiteslopeofinputsignalcausesadirectpath
betweenVDD andGNDforashortperiodoftime
Boththetransistorsareconducting
ShortCircuitPowerConsumption
Imax isdeterminedby
SaturationcurrentofNMOSandPMOS
Dependson
sizes
processtechnology
temperature
Imax isastrongfunctionof
Ratiobetweentheinputandoutputslopes
afunctionofCL
ShortCircuitPowerConsumption
ApproximateISC asatriangularfunction
Energypercycle
ESC
tr t f
I max tr I max t f
VDD
VDD I SC
2
2
2
PSC VDD I SC f
ImpactofCL onPSC
WithlargeCL
Inputmovesthroughthetransientregionbeforethe
outputstartstochange
VDS ofPMOSis 0duringthisperiod
PMOSshutsoffwithoutdeliveringanycurrent
ISC 0
10
ImpactofCL onPSC
WithsmallCL
Outputfalltimeismuchsmallerthantheinputrisetime
PMOSVDS VDD formostofthetransitionperiod
PMOSdeviceisinsaturation
ISC PMOSsaturationcurrent
11
ObservationsonPSC
Short circuit dissipation is minimized when
output rise (fall) time larger than input rise (fall) time
Output rise (fall) time too large slows down the gate
Can cause short circuit currents in the fan-out gates
Local vs. global conflict
ObservationsonPSC
Shortcircuitcurrentisreducedwhenthepowersupplyis
lowered.
WhenVDD <VTN +|VTP|,ISC =0
Shortcircuitdissipationisbecominglessimportantindeep
submicrontechnologies asthresholdvoltagesscalingata
slowerratethanVDD
13
NMOS/PMOSRatio
WidthofPMOSisincreasedsothattheresistancematchesthatof
NMOS
PMOStoNMOSwidthequalstotheratioof mobility(n/p),
typically2to3.5(ifstrainedsiliconisused,1)
Motivationbehindthisapproachistocreateaninverterwith
symmetricalVTC
PLH =PHL
Ratiomaynotyieldstheminimumoverallpropagationdelay
Ifsymmetryandreducednoisemarginsarenotofprimeconcern
speedupinverterbyreducingthewidthofthePMOSdevice
14
NMOS/PMOSRatio
Rationalitybehindthestatement wideningthe
PMOSis
ImprovesthetPLH oftheinverterbyincreasingthe
chargingcurrent
DegradesthetPLH becauseofalargerparasitic
capacitance
Whentwocontradictoryeffectsarepresent,
theremustexistatransistorratiothatoptimizes
thepropagationdelayoftheinverter
15
CascadedInverter
Considertwoidentical,cascadedCMOSinverters
Theloadcapacitanceofthefirstgateequals
CL = (Cdp1 + Cdn1) + (Cgp2 + Cgn2) + CW
WhenthePMOSdevicesare timeslargerthanthe
NMOS[ =(W/L)p/(W/L)n],alltransistorcapacitances
willscaleinapproximatelythesameway
Cdp1 Cdn1 and Cgp2 Cgn2
Thus,
CL = (1 + ) (Cdn1 + Cgn2) + CW
16
CascadedInverter
WithReqp (Reqn)theequivalentonresistanceofthe
PMOS(NMOS)overtheintervalofinterest
with PLH = Reqp CL and PHL = Reqn CL
Theaveragepropagationdelayis
Reqp
CascadedInverter
r
1 C C C 1 R
2
dn1
gn 2
eqn
Theoptimalvalueof (opt)canbefoundbysetting
thefirstdifferentialofp withrespectto to0
Cw
opt r 1
Cdn1 Cdn 2
Ifwiringcapacitanceisnotnegligible,largervalueof
shouldbeused
18
CascadedInverter
Theoptimumvalueof isaround1.9
IfCw isnegligible,
(Cdn1+Cgn2>>Cw),opt=r0.5,
incontrasttothefactorr
normallyusedinthenon
cascadedcase.
Smallerdevicesizesyield
fasterdesignatthe
expenseofsymmetryand
noisemargin
19
SuperBuffer
Achainofinvertersdesignedtodrivealargecapacitiveloadwith
minimalsignalpropagationdelaytime.
SuperBuffer
CL
GivenalargecapacitiveloadCL
Howtosizetheinverters?
Howmanystagesareneededtominimizethedelay?
20
InverterSizing
LetCiref andRref bethereferenceintrinsiccapacitanceand
equivalentonresistanceoftheinverter,andSbethe
sizingfactor
Cext
S
Cext
p 0.69 Rref Ciref 1
SC
iref
Cext
p p 0 1
SC
iref
p 0.69
Rref
SC
iref
21
InverterSizing
Cg andCintrinsic areproportionaltothegatesizeone
canwrite(thus isthesizingfactor)
Cintrinsic =Cg
NisNumberofinverterstages
Thedelayofjth inverterstagecanbewrittenas
Cg , j 1
C
ex
t
p , j p 0 1
p p 0 1
g, j
22
Ciref
InverterSizing
Totaldelaycanbecalculatedas
N
N
Cg , j 1
p p , j p 0 1
j 0
j 0
Cg , j
WithCg,N+1=CL
Minimump isobtainedbysetting
p
Cg , j
Cext
p p 0 1
C
iref
0 for each j
23
InverterSizing
p
Cg , j
Cg , j 1
Cg , j
Cg , j
Cg , j 1
; for j 1 N
Eachinverterissizedupbythesamefactorf withrespecttothe
precedinggate,andthussamedelay
GivenCg,0 andCL (Fistheeffectivesizeratio)
CL
f N 1
N 1 F
C g ,0
24
InverterSizing
Theminimumdelayis
Evaluating p 0
N 1 F
p N 1 p 0 1
N 1
N 1
F ln F
0
N 1
f e
1
f
f ln f 1
25
InverterSizing
Forthespecialcasewhen =0(noselfloading),
f ln f 1
f e
Inreality,theselfloadingcannotbeignored
26
BufferDesign
1
tp
64
65
18
64
15
64
2.8
15.3
64
16
2.8
64
22.6
27