Professional Documents
Culture Documents
2, APRIL 2006
959
I. INTRODUCTION
Manuscript received November 22, 2004; revised March 22, 2005. This
work was supported by the China Postdoctoral Science Foundation. Paper no.
TPWRD-00554-2004.
The authors are with the Department of Electrical Engineering, Tsinghua University, Beijing 100084, China (e-mail: shizbcn@tsinghua.edu.cn;
hansj@tsinghua.edu.cn; hejl@tsinghua.edu.cn; zengrong@tsinghua.edu.cn;
zpxddz@sohu.com).
Digital Object Identifier 10.1109/TPWRD.2005.859293
960
Fig. 1.
Part of a grid.
and
are the longitudinal currents at points
where
and
of segment , respectively. From the equivalent circuit
can
shown in Fig. 2, by applying the electric circuit theory,
be expressed by
(5)
where
is the scalar electric potential at the central point
and
is the impedance between the
of segment
central point
and the end point . In a similar way,
can also be obtained. By substituting (3) into (5) and then substituting (5) into (4), (4) will have only leakage currents and
surface charges, and the following equation can be obtained:
(2)
(6)
where
and
are coefficients.
If segment is the voltage source, according to (3), the corresponding equation will be
(7)
(3)
is equal to the
where is the current leaking from segment
potential caused by segment when a unit current leaks from the
segment considering the ground image, is the surface charge
is equal to the potential caused by
on boundary element
boundary element with a unit charge considering the ground
image, is the number of the segments, and is the number of
the boundary elements. Therefore, the tower, the grading rings,
the phase conductors, and the ground wires of the transmission
lines can be regarded as a resistance network and the potentials
on the segments outer surfaces can be regarded as sources.
Let us suppose that the longitudinal current in the segment is
centralized on the axis, and the leakage current in the segment
leaks from the segments central point. For segment as shown
in Fig. 1, the leakage current of the th segment
can be expressed by the longitudinal currents as
(4)
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complex resistivity and the leakage currents as unknown variables. Therefore, MoM can calculate the electric field around the
tower at some frequency, not at dc, and the differences among
the phase angle of the three-phase conductors can be easily considered. Another advantage is that MoM need not set the voltage
for each segment. Because an equivalent circuit can be set up
based on the MoM, the voltage of each segment is determined
by the equivalent circuit. Therefore, only the segments on which
the voltage sources are located should be given the voltages as
(7). If the complex resistivity is used, the CSM and the MoM
will have the same results, because the resistivity of the metal
segment is much smaller than air and each interconnected part
is almost equipotential.
B. Equations for the Boundary Elements
For the composite insulators, BEM will be used. On each
boundary element, an equation can be set up based on the indirect BEM. For example, for the th element, it should be the
following equation [14], [15]:
(9)
is the dielectric constant of the insulator,
is the
where
is the area of the th
normal direction of the th element,
is the electric field at the th element caused
element, and
by the charges on other elements, the ground image of
and
the leakage currents on the segments. Then, a group of equations
can be set up for all of the boundary elements
(10)
where
is a coefficient matrix by the segments, and
is a
coefficient matrix by the boundary elements.
By combining (10) and (8), the final group of equations can
be set up. Then, the leakage currents on the segments and the
surface charges on the boundary elements can be obtained, from
which the electric field and potential around the composite insulators and towers can be calculated.
C. Complex Resistivity
In order to take account of not only the permittivity but also
the resistivity of the media, complex resistivity is used to calculate
in (3), which is defined by
(11)
The complex resistivity will also be used to calculate the electric
field and potential around the composite insulators and towers.
III. VALIDATION
In order to verify the model, the electric-field distribution
along a composite insulator presented in Fig. 1 of [8] is calculated. The method in [8] has been verified by measurements.
There are 72 weathersheds on the housing. A grading device
(ring) is placed at the line end. The permittivity used in the calculation is 4.5 for the housing and 7.2 for the fiberglass rod.
Fig. 3(a) shows the potential distribution along the axis of the insulator. The potential and distance in Fig. 3(a) are in percentage
Fig. 3. Electric-field distribution along the insulation distance at the center line
of the rod. (a) Potential distribution. (b) Electric-field strength distribution.
values. A similar comparison of the electric-field strength distribution is shown in Fig. 3(b).
It can be seen that the electric-field distributions obtained by
the coupling method proposed in this paper are almost the same
with those in [8], which verifies the validity of the method proposed in this paper. Note that the result of [8] in Fig. 3(a) did
not consider the weathersheds while, in this paper, the weathersheds are considered. This also proves the conclusion presented
in [8] that the weathersheds have little effect on the electric-field
distribution.
IV. APPLICATIONS
The electric field and potential distributions around a threephase 330-kV transmission tower with composite insulators are
analyzed by the proposed method. The size of the transmission
tower and composite insulators, the position of the phase conductors, and the ground wires are shown in Fig. 4. There are
three insulator strings (two I-strings and one V-string) installed
on the tower. The dimension of the composite insulator is shown
in Fig. 4(b). The insulator has 33 big weathersheds and 32 small
weathersheds. Each phase of the line has three subconductors
with the diameter of 18.9 mm in converse equiangular triangle
placement. The length of the side of the equiangular triangle is
350 mm. The phase conductors and ground wires in our calculation are 400 m long. The diameter of the grading ring is 340
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mm with the diameter of the metal tube being 30 mm. The distance from the upper surface of the grading ring to the end of the
composite insulator is 65 mm. Fig. 5 shows the potential distributions around the tower. Figs. 6 and 7 show the electric-field
distributions and the potential distributions around the I-string
and V-string, respectively. Table I shows the maximum electric-field strengths on the surfaces of the grading rings and at
the ends of the composite insulators.
From Figs. 57, it can be seen that the effects of the composite insulators on the whole electric field and potential distribution around the tower are very small, which was also verified
in [8]. This is because the volume of the insulators is very small
compared with the whole tower. The electric fields vary greatly
near the grading rings while varying slowly far away from the
grading rings. Because of the existence of the tower and the difference of the insulators installation, the electric fields around
the three-phase conductors are quite different.
From Table I, it can be seen that although the V-string is in the
window of the tower, the maximum electric-field strength on the
surfaces of the grading rings at the V-strings high-voltage end is
smaller than that at the I-strings HV end. This may be because
there are two grading rings at the V-strings HV end which can
shield each other. The maximum electric-field strength at the
V-strings HV end is a little greater than that at the I-strings HV
end, while the electric-field strength at the V-strings grounded
ends is much smaller than that at the I-strings grounded end.
This may be because the tower has a different shielding effect
on the insulators grounded ends.
Due to the shielding effects of the hardware fittings and
grading rings, it is noteworthy that the maximum electric-field
strengths along the surfaces of the subconductors near the tower
do not occur just near the hardware fittings, but at the places
with a little distance from the hardware fittings. This can be
seen from Fig. 8.
From Fig. 8, it can be seen that due to the shielding effects
of the hardware fittings and grading rings, the electric-field
strengths on the surfaces of the subconductors near the hardware fittings are small. These electric-field strengths increase
quickly with the distances from the hardware fittings and reach
corresponding peak values due to the effect of the tower. Then
they decrease slowly with the distances from the hardware
fittings until reaching the midspan.
For the subconductors of the middle phase, because the lower
subconductor is farthest from the grading rings, the electric-field
strength on the surface of this subconductor near the hardware
fittings is greater than those of the upper subconductors on both
sides, but with the increase of the distance from the hardware
fitting, the difference among the subconductors becomes small.
The peak value appears at the distance 1.7 m from the hardware
fitting, which is 10% higher than the maximum electric field on
the surfaces of the subconductors at the midspan.
For the subconductors of the side phase, because the lower
subconductor is farthest from the grading rings, the electric-field
strength on the surface of this subconductor near the hardware
fitting is also greater than those of the upper subconductor on
both sides, and with the increase of the distance from the hardware fitting, the difference among the subconductors becomes
small. However, the electric-field strength on the surface of this
subconductor increases more slowly than that of the upper subconductor close to the tower, and at the distance 0.6 m from the
hardware fitting, this electric-field strength begins to be smaller
than that of the upper subconductor close to the tower. The peak
value appears at the distance 2 m from the hardware fitting,
which is 8% higher than the maximum electric field on the surfaces of the subconductors at the midspan.
In summary, due to the shielding effects of the hardware fittings and grading rings, the electric-field strengths on the surfaces of the subconductors near the hardware fittings are small
and quite different from each other. However, at the places with
a little distance from the hardware fittings, the effect of the
tower appears great while the effects of the hardware fittings
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can take into account not only the permittivity but also the resistivity of the media by using the complex resistivity and the
leakage currents as unknown variables. Therefore, it can take
account the composite insulators, the transmission towers, the
phase conductors, and the ground wires altogether at some frequency, not at dc, and the differences among the phase angle of
the three-phase conductors can be easily considered. Because an
equivalent circuit can be set up based on the MoM, the voltage of
each segment is determined by the equivalent circuit, and only
the segments on which the voltage sources are located should
be given. The method is verified by comparing the results with
those in [8].
The electric-field distribution around a three-phase 330-kV
transmission tower with composite insulators was analyzed, and
several interesting results are obtained.
1) The effects of the composite insulators on the whole electric field and potential distribution around the tower are
very small.
2) The maximum electric-field strength on the surfaces of the
grading rings of the V-strings HV end is 6.5% smaller
than that of the I-strings HV end, while the maximum
electric-field strength at the V-strings HV end is 18.3%
greater than that at the I-strings HV end.
3) Due to the shielding effects of the hardware fittings and
grading rings, the maximum electric-field strengths along
the surfaces of the subconductors near the tower do not
occur just near the hardware fittings. For middle phase,
the peak value appears at the distance 1.7 m from the
hardware fitting, which is 10% higher than the maximum
electric field on the surfaces of the subconductors at the
midspan. While for side phase, the peak value appears at
the distance 2 m from the hardware fitting, which is 8%
higher than the maximum electric field on the surfaces of
the subconductors at the midspan.
4) The maximum electric-field strength of the middle phase
is 7% higher than those of phases on both sides.
Both the method and the results are useful for the design of
high-voltage transmission lines.
REFERENCES
[1] H. M. Schneider, J. F. Hall, G. Karady, and J. Rendowden, Nonceramic
insulators for transmission lines, IEEE Trans. Power Del., vol. 4, no. 4,
pp. 22142221, Oct. 1989.
[2] A. J. Phillips, D. J. Childs, and H. M. Schneider, Aging of nonceramic
insulators due to corona from water drops, IEEE Trans. Power Del., vol.
14, no. 3, pp. 10811089, Jul. 1999.
[3] B. Y. Lee, J. K. Park, and S. H. Myung, An effective modeling method
to analyze electric field around transmission lines and substations using
a generalized finite line charge, IEEE Trans. Power Del., vol. 12, no. 3,
pp. 11431150, Jul. 1997.
[4] B. Florkowska, A. Jackowicz-Korczynski, and M. Timler, Analysis of
electric field distribution around the high-voltage overhead transmission
lines with an ADSS fiber-optic cable, IEEE Trans. Power Del., vol. 19,
no. 3, pp. 11831189, Jul. 2004.
[5] S. Chakravorti and H. Steinbigler, Boundary element studies on insulator shape and electric field around HV insulators with or without polution, IEEE Trans. Dielect. Elect. Insul., vol. 7, no. 2, pp. 169176, Apr.
2000.
[6] H. El-Kishky and R. S. Gorur, Electric potential and field computation
along ac HV insulators, IEEE Trans. Dielect. Elect. Insul., vol. 1, no.
6, pp. 982990, Dec. 1994.
Bo Zhang was born in Datong, China, in 1976. He received the B.Sc. and
Ph.D. degrees in theoretical electrical engineering from the North China Electric Power University, Baoding, China, in 1998 and 2003, respectively.
Currently, he is a Research Assistant in the Department of Electrical Engineering, Tsinghua University, Beijing, China. His research interests include
computational electromagnetics, grounding technology, and electromagnetic
compatibility in power systems.
Shejiao Han was born in Xian, China, in 1966. He received the Ph.D. degree in
theoretical electrical engineering from Xian Jiaotong University, Xian, China,
in 2003.
Currently, he is a Postdoctoral Researcher in the Department of Electrical
Engineering, Tsinghua University. His research interests include computational
electromagnetics.
Rong Zeng (M02) was born in Shaanxi, China, in 1971. He received the B.Sc.,
M.Eng., and Ph.D. degrees from the Department of Electrical Engineering, Tsinghua University, Beijing, China, in 1995, 1997, and 1999, respectively.
He became a Lecturer in the Department of Electrical Engineering, Tsinghua
University, in 1999, and Associate Professor in the same department in 2002.
His research interests include high-voltage technology, grounding technology,
power electronics, and distribution system automation.
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Puxuan Zhu was born in Chongqing, China, in 1943. He received the B.Sc.
degree from the Department of Electrical Engineering, Wuhan University of
Hydraulic and Electric Power Engineering, Wuhan, China, in 1966.
Currently, he is a Researcher in the Department of Electrical Engineering,
Tsinghua University, Beijing, China. His research interests include high-voltage
technology and compact power transmission technology.