Professional Documents
Culture Documents
1. INTRODUCTION
The electrical conduction in
polymeric dielectrics is mainly due to
transport of free charge carriers present in
the bulk of the conducting polymer and from
a number of different conduction processes
taking place simultaneously depending upon
the experimental conditions. The structure of
these materials are sensitive to their
electrical, mechanical and thermal history so
that the mode of conduction differs from
55
2. EXPERIMENTAL DETAILS
56
I = I 0 exp
+ E1/ 2
kT
(1)
a 0
1/ 2
(2)
57
58
Table-1
Theoretical and Experimental value of
RS (Theo.)
PF (Theo.)
.X 10-5
...X 10-5
.X 10-5
40
3.21
2.62
5.64
60
3.21
2.59
5.49
80
3.19
2.48
5.32
90
3.18
2.34
5.13
Temp (oC)
4.50E-08
Tp=90C
4.00E-08
Tp=80C
3.50E-08
Tp=60C
Tp=40C
3.00E-08
2.50E-08
2.00E-08
1.50E-08
1.00E-08
5.00E-09
0.00E+00
0
10
20
30
40
50
Field Ep (kv/cm)
Fig 1 Current-Field Characteristics of doped PANI thickness 25 micron at different constant
tempratures 40,60,80,90o C with Al-Al electrode system
60
59
4.50E-07
Tp=90C
4.00E-07
Tp=80C
3.50E-07
Tp=60C
3.00E-07
Tp=40C
2.50E-07
2.00E-07
1.50E-07
1.00E-07
5.00E-08
0.00E+00
0
10
20
30
40
50
60
Field Ep (kv/cm)
Fig 2 Current-Field Characteristics of doped PMA thickness 25 micron at different constant
tempratures 40,60,80 and 90oC with Al-Al system
4.50E-08
25 Micron
4.00E-08
40 Micron
50 Micron
3.50E-08
3.00E-08
2.50E-08
2.00E-08
1.50E-08
1.00E-08
0
10
20
30
40
50
Field Ep (kv/cm)
Fig 3 Current-Field Characterstics of doped PANI at constant temprature Tp=60o C with
different thickness 25,40,50 micron for Al-Al system
60
-4.6
-4.55
-4.5
-4.45
-4.4
-4.35
-4.3
60
-4.25
-7.56
log( I )(Amp)
-7.61
-7.66
-7.71
-7.76
log( d )
Fig. 4 Thickness dependence on conduction current of doped PANI for Al-Al electrode system
3.50E-08
Al-Al ElectrodeSystem
3.00E-08
Tp= 90C
2.50E-08
Tp= 80C
2.00E-08
Tp= 60C
1.50E-08
Tp= 40C
1.00E-08
3
6
( Ep)
1/2
kv/cm
Fig 5 Schottky plots log I versus Ep1/2 at various tempratures for doped PANI films of 25 micron
thickness for Al-Al electrode system
61
3.50E-08
Tp= 90C
3.00E-08
Tp= 80C
2.50E-08
Tp= 60C
2.00E-08
1.50E-08
Tp= 40C
1.00E-08
3
3.5
4.5
5.5
( Ep)
1/2
6.5
7.5
kv/cm
Fig 6 Schottky plots logI versus Ep1/2 at various tempratures for doped PANI films of 25 micron
thickness for Al-Cu Electrode System
-12.55
-12.6
-12.65
log ( I / T 2 )
Al-Cu System
-12.7
-12.75
Ep=6kv/cm
-12.8
Ep=12kv/cm
Ep=18kv/cm
-12.85
-12.9
2.7
2.75
2.8
2.85
2.9
2.95
3.05
3.1
3.15
3.2
-1
1000 / T(K )
2
Fig. 7 Plot of log(I/T ) against 1000/T of doped PANI of thickness 25 micron for given electric field for
Al-Al electrode system
3.25
62
-11.6
-11.7
log( I / T )
-11.65
-11.75
-11.8
Ep=6kv/cm
Ep=12kv/cm
Ep=18kv/cm
-11.85
-11.9
2.7
2.75
2.8
2.85
2.9
2.95
3.05
3.1
3.15
3.2
3.25
1000/T(K-1 )
Fig. 8 Plot of log(I/T2) against 1000/T of doped PANI of thickness 25 micron for given electric field
for Al-Al electrode system
9.
REFERENCES
1.
2.
3.
4.
5.
6.
7.
8.
10.
11.
12.
13.
14.
15.
16.
17.
18.
P. K. Khare, R. K. Pandey. R. R.
Chaurasia and P. L. Jain, Polymer
International. 49, pp. 719 (2000).
M. Taylor and T. J. Lewis, J. Phys. D,
4, pp. 1346 (1971).
P. K. Khare, J. K. Upadhyay, Ashish
Verma and S. K. Paliwal, Polymer
International, pp. 145 (1998).
P. K. Khare and R. S. Chandok, J.
Polym. Mater. 12, pp. 23 (1995)
K. Rangaswami, A. V. Narsimham
and J. Sobhanadri, Indian J. Pure and
Appl. Phys. 33, pp. 279 (J995).
H. S. Nalwa, J. Macromol. Sci. C 31,
pp. 341 (1991).
J. Nderherbergh, ferroelectrics. 115,
pp. 295 (1991).
F. Gutman and L.E. Lyons, Organic
Semiconductors (New York, Wiley 1967).
J.G. Simmons, Phys. Rev. Letts. 15,
pp. 967 (1965).
W.Z. Schottky, Physik. 15, pp. 872
(1914).
63
19.
20.
21.
22.
23.
24.
25.
26.
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
37.
38.
39.
40.
41.
42.
43.
44.