IRF640

IRF640, SiHF640
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
Dynamic dV/dt Rating
200
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC)
70
Fast Switching
Qgs (nC)
13
Ease of Paralleling
39
Simple Drive Requirements
Qgd (nC)
Configuration
Single
COMPLIANT
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
RoHS*
Compliant to RoHS Directive 2002/95/EC
Available
Repetitive Avalanche Rated
0.18
S
S
N-Channel MOSFET
ORDERING INFORMATION
TO-220AB
IRF640PbF
SiHF640-E3
IRF640
SiHF640
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
20
Continuous Drain Current

Pulsed Drain
VGS at 10 V
TC = 25 C
TC = 100 C
Currenta
ID
IDM
Linear Derating Factor
UNIT
V
18
11
72
1.0
W/C
EAS
580
mJ
Currenta
IAR
18
Repetitive Avalanche Energya
EAR
13
mJ
Single Pulse Avalanche Energyb

Repetitive Avalanche
Maximum Power Dissipation
TC = 25 C
Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
125
dV/dt
5.0
V/ns
TJ, Tstg
- 55 to + 150
300d
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).
c. ISD 18 A, dI/dt 150 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91036
S11-0509-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF640, SiHF640
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
Maximum Junction-to-Case (Drain)
RthJC
1.0
UNIT
C/W
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 A
200
VDS/TJ
Reference to 25 C, ID = 1 mA
0.29
V/C
VGS(th)
VDS = VGS, ID = 250 A
2.0
4.0
Gate-Source Leakage
IGSS
VGS = 20 V
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
25
VDS = 160 V, VGS = 0 V, TJ = 125 C
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance

Forward Transconductance
RDS(on)
gfs
ID = 11 Ab
VGS = 10 V
VDS = 50 V, ID = 11 Ab
0.18
6.7
1300
430
130
70
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
13
Gate-Drain Charge
Qgd
39
Turn-On Delay Time
td(on)
14
tr
51
45
36
4.5
7.5
18
72
2.0
300
610
ns
3.4
7.1
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 18 A, VDS =160 V,
see fig. 6 and 13b
VDD = 100 V, ID = 18 A,
Rg = 9.1 , RD = 5.4 , see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
pF
nC
ns
nH
Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 C, IS = 18 A, VGS = 0 Vb
TJ = 25 C, IF = 18 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com
2

S11-0509-Rev. B, 21-Mar-11

IRF640, SiHF640
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
ID, Drain Current (A)
Top
100
25 C
100
4.5 V
20 s Pulse Width
TC = 25 C
100
10-1
91036_01
4.5 V
100
20 s Pulse Width
TC = 150 C
10-1
91036_02
100
Fig. 2 - Typical Output Characteristics, TC = 150 C

S11-0509-Rev. B, 21-Mar-11
3.0
2.5
10
ID = 18 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
101
VDS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance

(Normalized)
Top
VGS, Gate-to-Source Voltage (V)
91036_03
Fig. 1 - Typical Output Characteristics, TC = 25 C
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
20 s Pulse Width
VDS = 50 V
10-1
101
101
150 C
101
91036_04
20 40 60 80 100 120 140 160
TJ, Junction Temperature (C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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3

IRF640, SiHF640
3000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
2500
2000
Ciss
1500
1000
Coss
500
Crss
ISD, Reverse Drain Current (A)
Vishay Siliconix
150 C
25 C
101
100
VGS = 0 V
0
100
101
0.50
91036_05
VDS = 160 V
VDS = 40 V
102
10 s
100 s
10
5
1 ms
10 ms
1
TC = 25 C
TJ = 150 C
Single Pulse
For test circuit

see figure 13
0
0
91036_06
15
30
45
60
0.1
0.1
75
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
1.50
Operation in this area limited

by RDS(on)
VGS, Gate-to-Source Voltage (V)
103
VDS = 100 V
12
1.30
1.10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 18 A
16
0.90
VSD, Source-to-Drain Voltage (V)
91036_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
0.70
91036_08
10
102
103
Fig. 8 - Maximum Safe Operating Area

S11-0509-Rev. B, 21-Mar-11

IRF640, SiHF640
Vishay Siliconix
RD
VDS
VGS
20
D.U.T.
RG
+
- VDD
16
10 V
Pulse width 1 s
Duty factor 0.1 %
12
Fig. 10a - Switching Time Test Circuit
VDS
90 %
0
25
50
75
100
125
150
TC, Case Temperature (C)
91036_09
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
0.1
0 0.5
0.2
0.1
0.05
0.02
0.01
PDM
10-3
10-5
91036_11
t1
Single Pulse
(Thermal Response)
10-2
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-4
10-3
10-2
0.1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S11-0509-Rev. B, 21-Mar-11
www.vishay.com
5

IRF640, SiHF640
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
RG
+
-
I AS
V DD
VDS
10 V
tp
0.01
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1400
ID
6.0 A
11.0 A
Bottom 18.0 A
Top
1200
1000
800
600
400
200
0
VDD = 50 V
25
91036_12c
50
75
100
125
150
Starting TJ, Junction Temperature (C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
QG
10 V
12 V
0.2 F
0.3 F
QGS
QGD
D.U.T.
VG
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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6
Fig. 13b - Gate Charge Test Circuit

S11-0509-Rev. B, 21-Mar-11

IRF640, SiHF640
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit

+
D.U.T.
Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer
Rg
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test
+
-
VDD
Driver gate drive

P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform

Reverse
recovery
current
Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91036.

S11-0509-Rev. B, 21-Mar-11
www.vishay.com
7

Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
H(1)
L(1)
M*
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
4.25
4.65
0.167
0.183
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
0.36
0.61
0.014
0.024
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
10.04
10.51
0.395
0.414
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
3.54
3.94
0.139
0.155
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14

DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
Legal Disclaimer Notice

www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12

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IRF640, SiHF640

Dynamic dV/dt Rating

Simple Drive Requirements

Third generation Power MOSFETs from Vishay provide the

Compliant to RoHS Directive 2002/95/EC

Repetitive Avalanche Rated

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

Continuous Drain Current

Linear Derating Factor

Repetitive Avalanche Energya

Single Pulse Avalanche Energyb

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

This datasheet is subject to change without notice.

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

VDS = VGS, ID = 250 A

Zero Gate Voltage Drain Current

VDS = 200 V, VGS = 0 V

VDS = 160 V, VGS = 0 V, TJ = 125 C

Gate-Source Threshold Voltage

Drain-Source On-State Resistance

Reverse Transfer Capacitance

Total Gate Charge

Turn-On Delay Time

Internal Drain Inductance

Internal Source Inductance

Drain-Source Body Diode Characteristics

Pulsed Diode Forward Currenta

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Document Number: 91036

This datasheet is subject to change without notice.

ID, Drain Current (A)

ID, Drain Current (A)

Fig. 2 - Typical Output Characteristics, TC = 150 C

Document Number: 91036

VDS, Drain-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 C

VDS, Drain-to-Source Voltage (V)

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

ISD, Reverse Drain Current (A)

VDS, Drain-to-Source Voltage (V)

For test circuit

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Operation in this area limited

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

VDS, Drain-to-Source Voltage (V)