AP9972GS/P-HF

Halogen-Free Product

Advanced Power
Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Low Gate Charge

Single Drive Requirement

RoHS Compliant & Halogen-Free

BVDSS

60V

RDS(ON)

18m

ID

60A

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

G D

TO-263(S)

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP) are
available for low-profile applications.
G

Absolute Maximum Ratings

Symbol

Parameter

TO-220(P)
S

Rating

Units

VDS

Drain-Source Voltage

60

VGS

Gate-Source Voltage

+25

ID@TC=25

Continuous Drain Current, VGS @ 10V

60

ID@TC=100

Continuous Drain Current, VGS @ 10V

38

IDM

Pulsed Drain Current

230

PD@TC=25

Total Power Dissipation

89

0.7

W/

45

mJ

30

Linear Derating Factor

3

Single Pulse Avalanche Energy

EAS

IAR

Avalanche Current

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
Rthj-c

Parameter
Maximum Thermal Resistance, Junction-case
4

Value

Units

1.4

/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient (PCB mount)

40

/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

62

/W

Data and specifications subject to change without notice

1
201104186

AP9972GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

60

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

0.06

V/

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V, ID=35A

18

VGS=4.5V, ID=25A

22

VGS=0V, ID=250uA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=35A

55

IDSS

Drain-Source Leakage Current

VDS=60V, VGS=0V

10

uA

Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V

250

uA

Gate-Source Leakage

VGS=+25V, VDS=0V

+100

nA

ID=35A

32

51

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=48V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

20

nC

VDS=30V

11

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=35A

58

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=10V

45

ns

tf

Fall Time

RD=0.86

80

ns

Ciss

Input Capacitance

VGS=0V

3170 5070

pF

Coss

Output Capacitance

VDS=25V

280

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

230

pF

Rg

Gate Resistance

f=1.0MHz

1.7

Min.

Typ.

IS=35A, VGS=0V

1.2

Source-Drain Diode
Symbol
VSD

Parameter
2

Forward On Voltage

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=35A, VGS=0V,

50

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

48

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=30V , L=100uH , RG=25 , IAS=30A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP9972GS/P-HF
200

150

10V
7.0V

10V
7.0V

T C = 150 C

150

ID , Drain Current (A)

ID , Drain Current (A)

T C =25 C

5.0V
100

4.5V

5.0V

100

4.5V

50

50

V G =3.0V

V G =3.0V

0
0

10

12

14

10

12

14

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.6

20

I D = 25 A
T C =25 o C

I D =35A
V G =10V

Normalized RDS(ON)

1.4

RDS(ON) (m)

18

16

1.2

1.0

0.8

0.6

14
2

-50

10

V GS , Gate-to-Source Voltage (V)

50

100

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

20

1.7

T j =150 o C

Normalized VGS(th) (V)

15

IS(A)

T j =25 o C

10

1.2

0.7

0.2

0
0

0.2

0.4

0.6

0.8

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.2

-50

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
3

AP9972GS/P-HF
f=1.0MHz
10

10000

C iss

V DS = 30 V
V DS = 38 V
V DS = 48 V

C (pF)

VGS , Gate to Source Voltage (V)

I D = 35 A

1000

C oss
C rss

100

0
0

20

40

60

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

Normalized Thermal Response (Rthjc)

ID (A)

100

100us

10

1ms
10ms
100ms
DC

T C =25 o C
Single Pulse

Duty factor=0.5

0.2

0.1

0.1
0.05

PDM

t
0.02

T
0.01

Duty factor = t/T

Peak Tj = PDM x Rthjc + T C
Single Pulse

0.01
0.1

10

100

1000

0.00001

0.0001

0.001

V DS , Drain-to-Source Voltage (V)

0.01

0.1

10

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

100

VG

V DS =5V
ID , Drain Current (A)

80

T j =25 o C

QG

T j =150 o C

4.5V
60

QGS

QGD

40

20

Charge

0
0

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform