IRFP460

N - CHANNEL 500V - 0.22 - 20 A - TO-247

PowerMESH MOSFET
TYPE
IRFP460

V DSS

R DS(on)

ID

500 V

< 0.27

20 A

TYPICAL RDS(on) = 0.22

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

DESCRIPTION
This power MOSFET is designed using the
companys consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.

TO-247

APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.

INTERNAL SCHEMATIC DIAGRAM

3
2
1

ABSOLUTE MAXIMUM RATINGS

Symbol
V DS
V DGR

Value

Un it

Drain-source Voltage (V GS = 0)

Parameter

500

Drain- gate Voltage (R GS = 20 k)

500

G ate-source Voltage

20

ID

Drain Current (continuous) at Tc = 25 o C

20

ID

Drain Current (continuous) at Tc = 100 oC

13

Drain Current (pulsed)

80

V GS

I DM ()
P tot

T otal Dissipation at Tc = 25 C
Derating Factor

dv/dt( 1 )
Ts tg
Tj

Peak Diode Recovery voltage slope

Storage Temperature
Max. Operating Junction Temperature

() Pulse width limited by safe operating area

September 1998

250

W /o C

3.5

V/ns

-65 to 150

150

( 1) ISD 20 , di/dt 160 A/s, VDD V(BR)DSS, Tj TJMAX

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IRFP460
THERMAL DATA
R thj -case
Rthj -amb

R thc-sink
Tl

Thermal Resistance Junction-case

Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose

0.5
30
0.1
300

C/W
oC/W
o
C/W
o
C

Max Valu e

Unit

20

1000

mJ

AVALANCHE CHARACTERISTICS
Symbo l

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

E AS

Single Pulse Avalanche Energy

o
(starting Tj = 25 C, I D = IAR , VDD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symbo l
V (BR)DSS

Parameter
Drain-source
Breakdown Voltage

Test Con ditions

I D = 250 A

V DS = Max Rating
Zero G ate Voltage
Drain Current (V GS = 0) V DS = Max Rating

IGSS

Gate-body Leakage
Current (VDS = 0)

T yp.

Max.

500

V GS = 0

I DSS

Min.

Unit
V

T c = 125 oC

V GS = 20 V

10
100

A
A

100

nA

ON ()
Symbo l

Parameter

Test Con ditions

ID = 250 A

V GS(th)

Gate Threshold
Voltage

R DS(on)

Static Drain-source O n V GS = 10V

Resistance

I D(o n)

V DS = V GS

Min.

T yp.

Max.

Unit

0.22

0.27

ID = 12 A
20

On State Drain Current V DS > ID(o n) x R DS(on )ma x

V GS = 10 V

DYNAMIC
Symbo l
g f s ()
C iss
C os s
C rss

2/8

Parameter

Test Con ditions

Forward
Transconductance

V DS > ID(o n) x R DS(on )ma x

Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance

V DS = 25 V

f = 1 MHz

I D = 12 A
V GS = 0

Min.

T yp.

13

Max.

Unit
S

4200
500
50

pF
pF
pF

IRFP460
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l

Parameter

Test Con ditions

t d(on)
tr

Turn-on Time
Rise Time

V DD = 250 V ID = 10 A
VGS = 10 V
R G = 4.7
(see test circuit, figure 1)

Qg
Q gs
Q gd

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

V DD = 400 V ID = 20 A V GS = 10 V

Min.

T yp.

Max.

32
15

Unit
ns
ns

100
21
37

130

nC
nC
nC

T yp.

Max.

Unit

SWITCHING OFF
Symbo l
tr (Voff)
tf
tc

Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time

Test Con ditions

Min.

20
25
47

V DD = 400 V ID = 20 A
R G = 4.7 V GS = 10 V
(see test circuit, figure 5)

ns
ns
ns

SOURCE DRAIN DIODE

Symbo l
ISD
I SDM ()
V SD ()
t rr
Q rr
I RRM

Parameter

Test Con ditions

Min.

T yp.

Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage

I SD = 20 A

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

I SD = 20 A di/dt = 100 A/s

T j = 150 o C
V DD = 100 V
(see test circuit, figure 3)

V GS = 0

Max.

Unit

20
80

A
A

1.6

700

ns

25

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

() Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

3/8

IRFP460
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/8

IRFP460
Normalized Gate Threshold Voltage vs

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

IRFP460
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 1: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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IRFP460

TO-247 MECHANICAL DATA

mm

DIM.
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

4.7

5.3

0.185

0.209

2.2

2.6

0.087

0.102

0.4

0.8

0.016

0.031

1.4

0.039

0.055

F3

2.4

0.079

0.094

F4

3.4

0.118

0.134

10.9

0.429

15.3

15.9

0.602

0.626

19.7

20.3

0.776

0.779

L3

14.2

14.8

0.559

0.413

L4

34.6

1.362

L5

5.5

0.217

0.582

0.079

0.118

Dia

3.55

3.65

0.140

0.144

P025P

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IRFP460

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