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Quasi-Resonant Converters
Introduction
20.1 The zero-current-switching quasi-resonant switch cell
20.1.1 Waveforms of the half-wave ZCS quasi-resonant switch cell
20.1.2 The average terminal waveforms
20.1.3 The full-wave ZCS quasi-resonant switch cell
20.2 Resonant switch topologies
20.2.1 The zero-voltage-switching quasi-resonant switch
20.2.2 The zero-voltage-switching multiresonant switch
20.2.3 Quasi-square-wave resonant switches
20.3 Ac modeling of quasi-resonant converters
20.4 Summary of key points
– – – – –
D1
Lr D1 Q1 Lr
i1(t) i2r(t) i2(t) i1(t) i2r(t) i2(t)
+ + + + + +
Q1
v1(t) v1r(t) D2 Cr v2(t) v1(t) v1r(t) D2 Cr v2(t)
– – – – – –
Switch network Switch network
Half-wave ZCS quasi-resonant switch cell Full-wave ZCS quasi-resonant switch cell
Lr D1 Q1
Tank inductor Lr in series with transistor: i1(t) i2r(t) i2(t)
+ + +
transistor switches at zero crossings of inductor
current waveform
v1(t) v1r(t) D2 Cr v2(t)
Tank capacitor Cr in parallel with diode D2 : diode
switches at zero crossings of capacitor voltage – – –
waveform Switch network
Half-wave ZCS quasi-resonant switch cell
Two-quadrant switch is required:
Half-wave: Q1 and D1 in series, transistor
D1
turns off at first zero crossing of current Lr
i1(t) i2r(t) i2(t)
waveform + + +
Full-wave: Q1 and D1 in parallel, transistor Q1
turns off at second zero crossing of current v1(t) v1r(t) D2 Cr v2(t)
waveform
– – –
Performances of half-wave and full-wave cells Switch network
differ significantly. Full-wave ZCS quasi-resonant switch cell
It is assumed that the converter filter elements are large, such that their
switching ripples are small. Hence, we can make the small ripple
approximation as usual, for these elements:
i 2(t) ≈ i 2(t) Ts
v1(t) ≈ v1(t) Ts
Lr D1 Q1
A generalization of the duty cycle i1(t) i2r(t)
d(t) + +
I2
Lr D1 Q1 V1
i1(t) i2r(t)
Lr
+ +
Subinterval: 1 2 3 4 θ = ω0t
ω0Ts
Conducting Q1 Q1 X D2
Each switching period contains four devices: D1 D1
subintervals D2
+
This subinterval ends when diode D2
V1 v2(t) I2
– becomes reverse-biased. This occurs
at time ω0t = α, when i1(t) = I2.
–
V1 I 2R0
i 1(α) = α = I2 α=
R0 V1
V1 + v2(t) Cr I2
–
The dc components of these
– waveforms are the dc
solution of the circuit, while
The circuit equations are the sinusoidal components
di 1(ω0t) have magnitudes that depend
Lr = V1 – v2(ω0t) v2(α) = 0 on the initial conditions and
dt
dv (ω t) i 1(α) = I 2 on the characteristic
C r 2 0 = i 1(ω0t) – I 2 impedance R0.
dt
V1 i1(t)
Peak inductor current: i 1(ω0t) = I 2 + sin ω0t – α
R0
V1 v2(ω0t) = V1 1 – cos ω0t – α
I2
I 1pk = I 2 + V1
R0 Lr
Subinterval: 1 2 3 4 θ = ω0t
This subinterval ends at the first zero α β δ ξ
crossing of i1(t). Define β = angular length of ω0Ts
subinterval 2. Then
V1
i 1(α + β) = I 2 + sin β = 0 Hence
R0
I 2 R0
I 2 R0 β = π + sin – 1
sin β = – V1
V1
Must use care to select the correct – π < sin – 1 x ≤ π
2 2
branch of the arcsine function. Note
(from the i1(t) waveform) that β > π. V1
I2 <
R0
If the requirement
V1
I2 <
R0
is violated, then the inductor current never reaches zero. In
consequence, the transistor cannot switch off at zero current.
The resonant switch operates with zero current switching only for load
currents less than the above value. The characteristic impedance
must be sufficiently small, so that the ringing component of the current
is greater than the dc load current.
Capacitor voltage at the end of subinterval 2 is
2
I R
v2(α + β) = Vc1 = V1 1 + 1– 2 0
V1
All semiconductor devices are off. The Subinterval 3 ends when the
circuit reduces to: tank capacitor voltage
+ reaches zero, and diode D2
becomes forward-biased.
v2(t) Cr I2 Define δ = angular length of
subinterval 3. Then
–
v2(α + β + δ) = Vc1 – I 2R0δ = 0
The circuit equations are
dv2(ω0t) V V IR 2
Cr = – I2
dt δ = c1 = 1 1 – 1– 2 0
v2(α + β) = Vc1 I 2R0 I 2R0 V1
The solution is
v2(ω0t) = Vc1 – I 2 R0 ω0t – α – β
Lr D1 Q1
Averaged switch modeling: i1(t) i2r(t)
we need to determine the + +
α+β i1(t)
ω0
q2 = i 1(t)dt q1 q2
α
ω0
I2 〈 i1(t)〉Ts
Node equation for subinterval 2:
i 1(t) = i C(t) + I 2
α α+β t
ω0 ω0
Substitute:
α+β α+β
ω0 ω0
q2 = i C(t)dt + I 2 dt Lr
i1(t)
α α
ω0 ω0 + ic(t)
Second term is integral of constant I2: +
V1 v2(t) Cr I2
α+β –
ω0 β
I 2 dt = I 2 ω –
α 0
ω0
Circuit during subinterval 2
αI 2 CVc1 βI 2
i 1(t) = + +
Ts 2ω0Ts Ts ω0Ts
i 1(t)
µ=
Ts
= α + CVc1 + β
I2 2ω0Ts I 2Ts ω0Ts
Eliminate α, β, Vc1 using previous results:
µ = F 1 12 J s + π + sin – 1(J s) + 1 1 + 1 – J 2s
2π Js
where
I 2 R0
Js =
V1
µ = FP12 J s
6
0
0 0.2 0.4 0.6 0.8 1
Js
ZCS boundary
1
Switch
0.9 characteristics:
0.8
max F bounda
0.8
µ = FP12 J s
0.7
0.6
0.6
Js 0.5
ry
Mode boundary:
0.4 0.4
0.3 Js ≤ 1
0.2
0.2 JsF
µ≤1–
F = 0.1 4π
0
0 0.2 0.4 0.6 0.8 1
µ
Fundamentals of Power Electronics 20 Chapter 20: Quasi-Resonant Converters
Buck converter containing half-wave ZCS quasi-resonant switch
max F bounda
0.8
IR
Js = 0 0.7
Vg 0.6
0.6
Js
ZCS occurs when 0.5
ry
Vg 0.4 0.4
I≤ 0.3
R0
0.2
0.2
Output voltage varies over the
F = 0.1
range
FIR0
0 ≤ V ≤ Vg – 0
4π 0 0.2 0.4 0.6 0.8 1
µ
M= V = 1
Vg 1 – µ Ig L i2(t) Cr
i1(t)
I 2 R0 I g R0 D2 + +
Js = = Lr
V1 V
+
Ig = I Vg – D1
v1(t) C R V
1–µ
Q1
Half-wave ZCS equations: – –
µ = FP12 J s
Half i1(t)
Lr D1 Q1
i2r(t) i2(t) i1(t)
wave + + +
I2
v1(t) v1r(t) D2 Cr v2(t)
V1
Lr
– – – Subinterval: 1 2 3 4 θ = ω0t
Switch network
Half-wave ZCS quasi-resonant switch cell
Full Lr
D1
wave i1(t) i2r(t) i2(t) i1(t)
+ + +
Q1 I2
v1(t) v1r(t) D2 Cr v2(t) V1
Lr
– – – Subinterval: 1 2 3 4 θ = ω0t
Switch network
Full-wave ZCS quasi-resonant switch cell
V1 1 + 1 – J 2s (half wave)
Vc1 =
V1 1 – 1 – J 2s (full wave)
P1 J s = 1 12 J s + 2π – sin – 1(J s) + 1 1 – 1 – J 2s
2π Js
µ = FP1 J s 1
ZCS boundary
max F bounda
approximated as F = 0.2 0.4 0.6 0.8
P1 J s ≈ 1
0.6
Js
ry
so 0.4
f
µ≈F= s
f0
0.2
0
0 0.2 0.4 0.6 0.8 1
µ
– – –
Switch network
ZCS quasi-resonant switch cell
SPST switch SW:
Cr
Connection of tank
Lr SW
capacitor to two i1(t) i2(t) L
other points at ac + +
ground. +
Vg D2 v2(t) C R V
–
This simply
– –
changes the dc
ZCS quasi-resonant switch
component of tank
capacitor voltage. Cr
The ac high-
SW
frequency i1(t)
Lr
i2(t) L
components of the + +
tank waveforms +
Vg D2 v2(t) C R V
are unchanged. –
– –
ZCS quasi-resonant switch
Cr
D2
Cr
i1(t) iLr(t) i2(t) L I
+ D1 + +
Lr
Vg + v1(t) Q1 D2 v2(t) C R V
–
– – –
µ = 1 – FP1 1 full-wave
Js
Subinterval: 1 2 3 4 θ = ω0t
iLr(t)
ZVS boundary I2
Js ≥ 1
Cs
D2 Cd
Cs L
i1(t) i2(t) I
+ D1 + +
Lr
Vg + v1(t) D2 Cd v2(t) C R V
– Q1
– – –
ZVS
SW Lr Cr D2
Lf D1 Q1 L
I
+
Lr
Vg + D2 C R V
– Cr
Cf
–
Lr i2(t)
D1
i1(t) i2(t) I V2
V1 –
+ + + Lr
L Lr
Q1
Vg + v1(t) D2 Cr v2(t) C R V
– v2(t) V1
– – –
0
ω0Ts ω0t
Conducting
devices: D1 Q1 X D2 X
– – – –
Gate
driver
Frequency vc(t)
modulator
+
–
+ + +
V1
fs
vg + v1r I2 f0 Cr v2 C R v
– fs
f0
– – –
fs
µ=F vc
Gm(s)
i1 L
1:F
+
–
+ +
V1
fs
vg + I2 f0 v2 C R v
– fs
f0
– –
fs
vc
Gm(s)
fs(t) i 2r(t)
Now, µ depends on js: µ(t) = P12 js(t) Ts
f0 js(t) = R0
v1r(t) Ts
Lr D1 L
i1(t) i2r(t) i2(t) i(t)
+ + + +
Q1
vg(t) + v1(t) v1r(t) D2 Cr v2(t) C R v(t)
–
– – – –
Gate
driver
Frequency vc(t)
modulator
with ∂µ R0 I 2
Kv = –
∂ js V 21
∂µ Fs 1 1 + 1 – J 2s
∂µ R0 = –
Ki = – ∂ js 2π f0 2 J 2s
∂ js V1
µ
Kc = 0
Fs
Lr i1 1 : µ0 i 2r L
+
–
+ + +
µ V1
vg + v1r µ I2 Cr v2 C R v
–
– – –
v1r i 2r
Kv ++ Ki
+
fs vc
Kc Gm(s)
i1 1 : µ0 i L
+
–
+
µ Vg
vg + µI C R v
–
vg i
Kv ++ Ki
+
fs vc
Kc Gm(s)
Gvg(s) = Gg0 1 µ 0 + K vV g
1 + 1 ωs + ωs
2 Gg0 =
Q 0 K iVg
0 1+
R
K cV g
Gvc(s) = Gc0 1 Gc0 =
K iVg
1 + 1 ωs + ωs
2
Q 0 1+
0 R
K iVg
1+
ω0 = R
Full-wave: poles and zeroes are same L rC r
as PWM K iVg
1+
Q= R
Half-wave: effective feedback reduces R0
Q-factor and dc gains + K iVg R
R R0
Lr
R0 =
Cr