Professional Documents
Culture Documents
EECS 3440
Lab Manual
January 2002
rev. 2
editor
Roger King, prof. EECS
ii
Foreword
This lab is a continuation of the lab experience included with the course Electronics I.
As such, it would be repetitious to include the sections describing the equipment, documenting
procedures, or reviewing SPICE. For the same reason, a comprehensive set of data sheets is not
included in this lab manual. (The PN2222A data sheet is included because of its frequent use.)
It is assumed that the student has retained a copy of the lab manual from the Electronics I
(EECS 3400) course.
The main new topics covered by this lab are frequency response and feedback in analog
electronic systems. These are fundamental for any practical electronics, and in addition, each of
these has a counterpart in the digital signal processing world. An understanding of the behavior
of the analog system is the best preparation for an understanding of the corresponding
digital-domain behavior. As with Electronics I, this lab will also emphasize the use of SPICE
along with hands-on experimentation to gain an intuitive understanding of the electronics
involved. The student is encouraged in each experiment to simulate the lab using SPICE, to
hand work a simplified analysis, and to compare these with the observed experimental behavior.
This lab is continually being redeveloped. Please give the instructor your feedback
concerning the lab experiments and procedures so that the future manuals can be as error-free as
possible.
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iv
Table of Contents
vi
Experiment 1
SPICE Modeling the 741 Op-Amp
Introduction
The purpose of this experiment is to gain experience with ac and transient SPICE
simulation procedures, and to learn about the slew rate and bandwidth behaviors of a typical
general-purpose op-amp. A simple model of the internal structure of the 741 op-amp will be
used.
Equipment Needed
v PC running a current version of
PSpice
Procedure
Use PSpice to run an analysis of the circuit of Fig. 1. A model for the 741 op-amp is
given in Fig. 2. (The model in Fig. 2 is also available from the instructor on disk.) The actual
circuit requires two 15-V power supplies for the op-amp; the model in Fig. 2 works without
having to explicity show these power supplies. Most general purpose op-amps have two internal
stages of gain: the first one is modeled in Fig. 2 as the voltage-controlled current source
Gstage1, and the second one is modeled as the voltage-controlled voltage source Estage2.
1. Make the input source Vin a pulse voltage source (VPULSE) in series with a transient
sine source (VSIN). Set the ac component of VPULSE to 1 V, and its pulse component
to transition from -1 V to +1 V as a square wave with a period of 400 s (200 s at -1 V,
and 200 s at +1 V). Set up VSIN for an offset voltage of 0, an amplitude of 50 mV, and
a frequency of 40 kHz. The input voltage to the inverting amplifier will then be a 1-V ac
signal during the ac analysis (a steady-state phasor analysis), and it will be a 50-mV
40-kHz sine wave added to a 1-V 2.5-kHz square wave during the transient simulation.
2. Run an ac sweep from 0.1 Hz to 10 MHz, and a transient simulation for 500 s.
2. The high-frequency cutoff fH is defined as the frequency at which the gain is down to
3 dB less than its low-frequency value. What is the value of fH for this amplifier?
Vout
3. What is the voltage gain of the op-amp itself Vid (in dB) at very low frequencies?
Describe the variation of the op-amp gain with respect to frequency. What is the value of
fH for the op-amp by itself?
Table 1
Device Parameters for the Inverting Amplifier SPICE Model
VPULSE
VSIN
Gstage1
Estage2
D1 & D2
Transconductance
amplifier (VCCS)
with saturation
Voltage amplifier
(VCVS) with
saturation
Generic diodes
(use Dbreak model)
DC=0
AC=0
VOFF=0
VAMPL=50mV
FREQ=40kHz
TABLE=
(-75mV,-15uA)
(+75mV,+15uA)
DC=0
AC=1V
V1=-1V
V2=+1V
TD=200us
TR=0
TF=0
PW=200us
PER=400us
TABLE=
(-50mV,-13V)
(+50mV,+13V)
Dbreak D(
IS=1E-14
CJO=0.1pF
RS=0.1)
Experiment 2
741 Op-Amp Circuits
Introduction
The purpose of this experiment is to gain experience with the '741 op-amp in several
typical applications, and to discover some of the basic limitations of all op-amps. The observed
behavior of the inverting amplifier will be compared with the simulated behavior from
Experiment 1.
Pre-Lab
It is expected that Experiment 1, "SPICE Modeling the '741 Op-Amp," has already been
performed.
Equipment Needed
v LM741/MC741/SN741 op-amp
(prefix indicates manufacturer)
Procedure
1. Connect the circuit of Fig. 1. Use a 100-mV peak 1-kHz sine wave input voltage to
vo
measure the system voltage gain Av = vi . (The expected result is -10.) To reduce the
high-frequency noise on the scope channel handling the 100-mV signal, turn on its
bandwidth limit, found on the channel input menu.
2. Measure the high-frequency cutoff (fH) of Fig. 1 using a 100-mV sine wave input and
monitoring the output voltage. Starting at 1 kHz, increase the frequency of v i until the
output v o has decreased to 70.7% of its 1-kHz value. Record this -3 dB frequency as fH .
(The expected value of fH is about 90 kHz.)
3. Collect two output voltage waveforms from Fig. 1 and display them simultaneously using
the memory capability of the DSO. Focus on the rising edge of the square wave
response. Display and record:
a) The response to a 50-mV peak 1-kHz square wave. Measure the slope of the rising
edge of the response using a horizontal scale of 0.5 s/div, and a vertical scale of
0.2 V/div.
b) The response to a 500-mV peak 1-kHz square wave. Measure the slope of the rising
edge of the response using a horizontal scale of 5 s/div, and a vertical scale of 2 V/div.
4. Measure the slew rate (SR) capability of the '741 op-amp from the recorded response of
(b) above. (The expected value of SR is about 0.5 V/s.) Try increasing the amplitude
5
6. Connect Fig. 3 and display the input and output voltage waveforms together, using a
0.5-V peak 1-kHz square wave for v i . Does the output appear to satisfy the following
transfer function?
vo =
1
RiCf
0t vi(t) dt + vo(0)
7. Record this square wave input with its triangle wave response. Record the input/response
pair for a 1-kHz sine wave.
Report
1. Compare the 1-kHz voltage gains measured for Figs. 1 and 2 with those predicted by
ideal op-amp equations.
2. Compare the high-frequency cutoff measured for Fig. 1 with that predicted by the SPICE
simulation in Experiment 1. Use the SPICE model for the '741 op-amp to explain why
the circuit gain decreases at frequencies above fH .
3. Compare the slew rate measured for Fig. 1 with that predicted by the SPICE simulation
in Experiment 1. Does increasing the input voltage amplitude beyond 1 V increase the
slew rate observed at the output? Why?
4. Do the integrator responses observed in steps 6 and 7 agree with the equation given for
an ideal op-amp? Compare the shapes and amplitudes of the predicted and observed
responses to square wave and sine wave inputs.
Fig. 3 Integrator.
Experiment 3
SPICE Simulation of a JFET Common-Source Amplifier
Introduction
The purpose of this experiment is to gain practical experience with the mechanics of the
SPICE simulations for bias point and ac analysis. The circuit used is a JFET common-source
amplifier.
Pre-Lab
There is no pre-lab for this experiment.
Equipment Needed
v Current version of PSpice
Procedure
Turn on the PC and open the current version of PSpice. Enter the circuit of Fig. 1 using
the library model for the 2N5457 JFET. The signal source Vin should be an ac source, set to an
amplitude of 1 V, and with its dc component set to 0 V.
1. Set up the simulation for a detailed bias point solution, a dc sweep, and an ac sweep. The
bias point solution will consist of a detailed listing of the operating-point solution in the
output file, along with calculated incremental model parameters for the JFET. Set the dc
sweep to step the dc value of source Vin from -5 V to +5 V in 0.1-V steps. Set the ac
sweep to step the frequency of the ac content of Vin from 1 Hz to 100 kHz in 101 steps
Experiment 4
JFET Common-Source Amplifier
Introduction
The purpose of this experiment is to investigate the performance of a JFET
common-source amplifier.
Equipment Needed
v Normal laboratory equipment
Pre-Lab
Estimated typical values of the JFET parameters are: VP = -2.5 V and IDSS = 3 mA.
Obtain a 2N5457 data sheet and find out what the allowable ranges of these parameters are.
Read the text file of the 2N5457 SPICE model currently used in this department and determine
what values the model assumes for these parameters.
Procedure
1. Obtain the FET drain characteristics using the curve tracer. Measure the pinchoff voltage
VP and the zero-bias drain current IDSS. Make sure these lie within the ranges promised
on the 2N5457 data sheet. Record the measured values of these two parameters, but you
do not need to record the drain characteristics.
2. Connect the circuit of Fig. 1 without C1 and measure its quiescent operating point (IDQ
and VGSQ).
3. Set the function generator for a 5-kHz sine wave with zero dc offset. Increase the FG
voltage level until the output voltage V o is on the verge of clipping-type distortion.
Record the output waveform, showing evidence of the voltage levels at which clipping
will occur.
4. Reduce the signal level to assure an undistorted output. Measure and record the voltage
gain Av
gain.
Vo
Vi at 5 kHz. Place C1 into the circuit and record its effect on the voltage
5. With C1 in the circuit, measure and record the amplitude and phase of the output voltage
(relative to the input voltage) at the following frequencies: 5 kHz, 500 Hz, 50 Hz.
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Background
Refer to your electronics text for background on modeling the JFET. For the purpose of
this experiment, it is OK to ignore channel-length modulation in modeling the JFET. Be aware
that various electronics books may present the following equations using different symbols.
v
iD = IDSS 1 VGSP
and
iD
gm = vGS
Q point
=
=
2IDSS
VP
2
VP
VGS
VP
IDSS $ ID
where
IDSS = zero-gate-voltage drain current, and
VP = pinchoff voltage.
The equations above are valid only in the constant-current (saturation, or pinch-off) region.
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Experiment 5
Small-Signal CC and CB Amplifiers
Introduction
The purpose of this experiment is the measurement of the small-signal voltage gain, input
resistance, and output resistance of a common-collector (emitter follower) and a common-base
amplifier. These two circuits are then compared to each other.
Equipment Needed
v Normal laboratory equipment
Procedure
Connect the circuit of Fig. 1 and measure its quiescent operating point (ICQ and VCEQ).
Connect a 5-kHz sine wave signal source to the input terminals, and a 100- load resistor to the
output. Measure the following small-signal amplifier parameters using a signal level low enough
to avoid clipping, yet high enough to be measurable.
1. Measure the voltage gain Av =
Vo
Vi
Vo
Vi
15
Report
1. Using reasonable approximations, predict the Q-point of Figs. 1 and 2, assuming that
dc = 150. Compare this with the experimentally measured Q-point.
2. Using the values of ac (hfe) and Q-point which were measured experimentally, predict the
16
17
2. Input resistance Ri can be measured by monitoring V o while driving the amplifier from a
source having a known source resistance (RS). Then, using a variable resistor in series
with the source, the source resistance is increased until V o drops to one-half its previous
value. We have:
3. Vo1 = Av Vs
Vo2 = Av Vs
Ri
Ri + Rs
(1)
Ri
Ri + Rs + Rpot
(second measurement)
(2)
4. Therefore:
Vo1
Vo2
1
2
Ri + Rs
(3)
Ri + Rs + Rpot
Ri = Rpot Rs
(4)
5. The input resistance Ri is calculated from the measured value of the variable resistor
(R pot ) and the value of the source resistance (R s ). For the FG in the electronics lab,
R s = 50
. This measurement is only valid for small (undistorted) signals. Ri is easily
calculated from Ri .
resistance Ro . This measurement is only valid for small signals. R o is easily calculated
from Ro .
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Experiment 6
Bypass and Coupling Capacitor Effects
Introduction
The purpose of this experiment is the measurement of the low-frequency response of an
ac-coupled amplifier.
Equipment Needed
v Normal laboratory equipment
Pre-Lab
Calculate the expected locations of the poles and zeros contributed by each capacitor in
Fig. 1 (they each act independently). Calculate the midband gain, and sketch a Bode plot of the
expected magnitude of the voltage gain from 1 Hz to 10 kHz.
Procedure
Gain will be measured over a wide range of values in this experiment: The amplitude of
the input signal may need to be changed in order to maintain a measurable output level, but at all
times keep the levels low enough to avoid appreciable distortion, yet high enough to be
measurable. You will need to use a switchable 0-dB/40-dB 50- attenuator at the FG output to
do this. Turn on the bandwidth limiters in both channels of the scope to reduce any
high-frequency noise present in low-level signals.
Details Lower the frequency by steps in a 10-4-2-1 sequence (e.g., 1 kHz - 400 Hz 200 Hz - 100 Hz), taking gain magnitude measurements at each step. You may need to
increase the input signal level at lower frequencies to maintain a measurable output
signal. Take data from 10 kHz down to 100 Hz. Continue going down in frequency
towards 10 Hz as far as meaningful data can be obtained. Use "averaging1" (found in the
scope Display menu) to reduce the amount of noise on small signals.
4. Divide the midband gain measured in part 1 by 1.414 (this is equivalent to subtracting
3 dB from its decibel value). Use the FG to experimentally measure the frequency at
which the amplifier's gain is 3 dB below its midband value. This is called the
"low-frequency cutoff."
Report
1. Bode plot the pre-lab calculated frequency response on 4-cycle semi-log paper. Use dB
notation, and use a frequency range of 1 Hz to 10 kHz.
2. Mark the experimental data points on this graph. Do they agree well with the predicted
values?
3. Identify the midband gain from the experimental data, and from the calculated response.
How do they compare?
4. Identify the low-frequency cutoff (fL) from the experimental data, and from the calculated
response. How do they compare?
1
"Averaging" is the process of storing repeated acquisitions of the waveform, each one based on the trigger
event, and point-by-point averaging these stored waveforms to produce the display. Averaging only works if there
is a stable trigger event.
20
Fig. 2 Bode plot of frequency response of C1 alone (upper figure); and C2 alone (lower figure)
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22
Experiment 7
BJT High-Frequency Performance
Introduction
The purpose of this experiment is the investigation of the high-frequency performance of
a BJT common-emitter amplifier. The transistor junction capacitances C and C will be
estimated from typical data sheet information.
Equipment Needed
v Normal laboratory equipment
Pre-Lab
Study the appendix to this lab which shows how to estimate the transistor junction
capacitances on the basis of the limited information typically given on a data sheet.
Procedure
The circuit of Fig. 1 may not maintain a stable dc operating point; therefore, you should
verify at several stages during the experiment that the operating point is still 5 mA/5 V (IC/VCE).
The collector current is controlled by adjusting VBB , and the collector-emitter voltage is then set
by adjusting VCC . Be sure to remove the dc voltmeter or milliameter from the circuit when
making the actual gain measurements. Gain will be measured from midband (5 kHz) to beyond
the high-frequency cutoff fH (1 MHz).
1. Connect Fig. 1 using a 1 K load resistor (RL). Set the dc operating point and remove all
Vo
dc meters from the circuit. Measure the midband gain factor V i at 5 kHz using a small
signal. Measure the transistor base-emitter resistance at 5 kHz by measuring the ac
signal at each end of R1.
2. Take gain measurements from 5 kHz to 1 MHz. The objective is to accurately determine
the high-frequency cutoff (fH). Take enough data points to be sure of the value of the
midband gain, and the frequency at which the gain is reduced to 70.7% of its midband
value. (Expected midband gain and hf cutoff are about -100 and 400 kHz.)
3. Change the load resistor (RL) to 560 . Readjust the dc operating point to maintain
5 mA/5 V. Measure the midband gain and the high-frequency cutoff again. (The
expected values are now 56% and 179% of the previous measurements, respectively.)
Report
1. Obtain a copy of the transistor data sheet for type 2N2222A or PN2222A, and put it in an
appendix to your report. Use the data sheet to estimate values for C and C .
2. Calculate the midband gain and high-frequency cutoff for each of the two values of load
resistance used. Compare these results with the experimental data.
3. Use SPICE to simulate the frequency response of the experimental circuit. Compare the
midband gain and high-frequency cutoff predicted by SPICE with your calculated and
observed data. After running your simulation successfully, open the *.OUT file and read
the values for C and C that were produced by SPICE. Compare these with your
estimated values.
24
2f T =
gm
C + C
If the proposed operating point current (IE ) is within one decade of the operating point used in
making the data sheet measurement, it may be assumed that fT does not change and the
computation of C is straightforward. If the proposed IE is small, model C by the following:
C = X0 + X1 $ IE
X0 is the zero-bias limiting value of the transition capacitance, and X1 is readily calculated from
the given GBW data together with the operating point used to measure it. This equation is then
used to estimate C at the proposed operating point.
As an example, capacitances are estimated from the data sheet for a National
Semiconductor PN2222A. A graph labeled "Emitter Transition and Output Capacitance vs.
Reverse Bias Voltages" directly states that C is typically 4.5 pF at VCB = 4.3 V. From the same
graph, X0 = 21 pF. Under the small-signal characteristics, it is stated that fT is at least 300 MHz
at IC = 20 mA. From this data, X1 = 20 pF/mA. Therefore, C is expected to be 121 pF at 5 mA.
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Experiment 8
Differential Amplifiers
Introduction
The purpose of this experiment is to investigate several key features of the balanced
differential pair and the wide band (asymmetrical) differential pair.
Equipment Needed
v Normal laboratory equipment
Pre-Lab
Assuming that the transistors will have a dc current gain ( or hFE) equal to 100, predict
the Q-points of Figs. 1 and 2. Estimate the differential gain (Ad) and the common-mode gain
(Acm) for Fig. 1. In each case, the output is taken at Q2's collector.
Procedure
1. Connect the circuit of Fig. 1 and verify that a reasonable Q-point is obtained. Remember
that the amplifier is not properly biased unless a dc current path is provided from each
transistor base to the ground. Substitute transistors until the collector currents of Q1 and
Q2 match to within 10 A of each other. Use the curve tracer to measure the ac current
gain (O or hfe) in the vicinity of the Q-point for each transistor.
2. Use the signal connections shown in solid lines in Fig. 1 to measure the differential-mode
Vo
gain ( Ad = Vs ) of the symmetric differential pair. Note that the output is taken
single-endedly (from one collector only). This is a midband, small-signal measurement;
use 400 Hz and a signal level low enough that there is no appreciable distortion in the
output sine wave. Use an attenuator as needed to reduce the output of the function
generator (FG). (The expected value is about 85.)
3. Measure the high-frequency cutoff fH of the symmetrical differential amplifier of Fig. 1.
Note that the input capacitance of the scope probe 1 is a part of the high-frequency model
of the circuit. (The expected value is about 27 kHz.)
4. Use the signal connections shown in broken lines in Fig. 1 to measure the common-mode
Vo
gain ( A cm = V cm ) of the symmetric differential pair. Use 400 Hz and a low signal level
so that there is no appreciable distortion in the input or output waveforms. (The expected
value is about -0.3.)
27
Differential Amplifiers
5. Connect the asymmetric differential pair of Fig. 2 and verify that a reasonable Q-point is
obtained. (VCB for Q2 should be between 10 and 18 V.)
6. Measure the gain ( Ad = Vs ) and the high-frequency cutoff of the asymmetric
differential pair of Fig. 2. Note that the input capacitance of the scope probe is also an
important part of the high-frequency model of this circuit. (The expected values are
about 85 and 80 kHz, respectively.)
Vo
Report
1. From the transistor data sheet, estimate the values of collector-base and emitter-base
capacitance at the Q-point. Hint: at the current level used here, C will be dominated by
its transition component.
2. Calculate the theoretical values of Ad , Acm and fH for Figs. 1 and 2, and compare with the
experimental results. (For Fig. 1, use Miller's Theorem and model the symmetrical
differential amplifier as equivalent to a common-emitter stage.)
3. Use SPICE (with a 2N2222A model) to simulate this circuit, and compare these results
with the experimental and calculated results.
4. Compare the gains and cutoff frequencies of Figs. 1 and 2. Compute a gain-bandwidth
product for each.
28
Differential Amplifiers
Fig. 1 Symmetrical differential pair. The load capacitance is the scope probe capacitance.
Fig. 2 Asymmetrical differential pair. The load capacitance is the scope probe capacitance.
Fig. 3 PN2222A
package and pin-out.
29
Differential Amplifiers
30
Experiment 9
Complementary-Symmetry Push-Pull Amplifier
Introduction
The purpose of this experiment is to observe the operation of a class-B
complementary-symmetry amplifier and the use of negative feedback to improve its behavior.
Equipment Needed
v Normal laboratory equipment
v Complementary-symmetry
output stage circuit board
Procedure
Connect the circuit of Fig. 1 using a complementary-symmetry output stage circuit board.
Fig. 3 gives a top view (component side) of this circuit board to identify the correct connection
points. Note that both Figs. 1 and 2 show only a simplified equivalent of the circuit board
schematic: The details of the circuit board are shown in Fig. 3. In making connections, bring
all ground leads separately back to the "COM" binding post on the circuit board (including the
function generator and scope ground leads). This is known as a "star" grounding arrangement.
1. Use the function generator (FG) to apply a 10-V peak 100-Hz triangle wave as shown in
Fig. 1. Connect the two scope channels as indicated. Display and record the input
(Chan. 1) and output (Chan. 2) waveforms. Note carefully the defect in the output
waveform around its zero crossings. This is known as "crossover" distortion.
2. Display and record an X-Y plot of output vs. input on the scope. (Look on the horizontal
"Main/Delayed" menu.) Be sure that both channels are set for zero offset and 2 V/div
before switching to the X-Y mode. This is the transfer function of the basic
complementary-symmetry output stage.
3. Obtain a type '741 op-amp and connect Fig. 2, placing the op-amp on a proto-board. It is
best to run separate jumper wires from each op-amp terminal to the corresponding
terminals on the output stage circuit board. Make all power supply connections (+15 V,
-15 V and COM) to the circuit board, not to the proto-board. Set the FG for 10 V peak at
100 Hz as before.
4. Display and record the input from the FG (Chan. 1) and the output (Chan. 2) waveforms.
Note the suppression of the crossover distortion by the negative feedback.
5. Display and record an X-Y plot of output vs. input as before. Use identical vertical
settings of 2 V/div and zero offset on both channels.
31
32
Fig. 3 Pictorial top view and detailed schematic of the complementary-symmetry output stage.
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34
Experiment 10
Negative Feedback
Introduction
The purpose of this experiment is to investigate the effects of shunt-shunt negative
feedback on the gain, input resistance and output resistance of a transresistance amplifier.
Equipment Needed
v Normal laboratory equipment
Procedure
Connect the circuit of Fig. 1. Verify that the Q-point is approximately 1 mA. All ac
measurements will be at midband (5 kHz) and small signal (no appreciable distortion).
1. Measure the closed-loop voltage gain Av =
Vo
Vs
2. Measure the input resistance indicated on Fig. 1, Rif . This may be done by measuring
the ac voltages VS and VSJ using the scope. Verify that these two voltages are in-phase.
Rif =
VSJ
IRS . (The expected value is about
3. Measure the output resistance indicated on Fig. 1, Rof . Fig. 2 shows how to do this:
Remove the function generator (FG), but keep its source resistance R S in place as
indicated. Connect the FG at the output terminal with a 100-K series resistor (R5). Set
the FG for a 10-V peak 5-kHz sine wave output and measure voltages V1 and V2.
V1
Compute the current in R5, and then find Rof = IR5 . (The expected value is about
370 .)
4. Connect the circuit of Fig. 3. This is the amplifier with the feedback removed, but the
loading effects of the feedback resistor Rf retained. Verify that the Q-point is the same as
previously, approximately 1 mA.
5. Measure the voltage gain Av = Vs , input resistance Ri , and output resistance Ro using
the same techniques as previously. (The expected values are -150, 3.2 K and, 5 K
respectively.)
Vo
35
Negative Feedback
Report
1. Use feedback theory to calculate the gain Av =
Vo
Vs
resistance Rof for Fig. 1. Be sure to note that the gain factor A v is not the one directly
A
stabilized by the feedback or given by the equation 1+A .
2. Use SPICE simulation to predict the gain and input/output resistances of Fig. 1.
3. Compare the results predicted by SPICE and by calculation to your experimental data.
output resistances as well.) When measuring the input resistance Rif , the source resistance RS
provides a convenient way of measuring the input current; however, changing the value of R S
from that given will alter the measured value of Rif because it would alter the loop gain. The
function generator (FG) is connected in series with a 1-K resistor which is considered the
source resistance. It is reasonably accurate to neglect the internal 50 resistance of the FG.
Similarly, the measuring apparatus in Fig. 2 (the FG with R5) alters the loop gain, and
thus produces an erroneous value of Rof . In this case, R5 is chosen to be much greater than the
open loop value of the output resistance so that it will only change the open loop gain by a small
amount and produce a reasonably accurate measurement.
36
Negative Feedback
Negative Feedback
38
Experiment 11
Voltage Regulators
Introduction
The purpose of this experiment is to investigate the performance characteristics of two
simple voltage regulators.
Equipment Needed
v Normal laboratory equipment
Pre-Lab
Complete the design of the Zener diode shunt regulator in Fig. 1 (determine the largest
5% standard value which can be used for R1). It must operate satisfactorily over a load current
range of 0 to 10 mA using a supply voltage of 12 V. The output voltage is expected to have a
nominal value of 6.8 V.
Procedure
The 12-V supply in the following procedure is a laboratory supply capable of 200 mA of
output current. Be sure to set its current limiter for at least this amount.
1. Set up the circuit of Fig. 1 using the standard value that you calculated for R1 in the
pre-lab. Use a resistor decade box as the "load resistor" RLOAD. Insert a milliammeter as
shown to monitor the load current. Measure the load voltage at light-load (ILOAD = 1 mA),
and at full-load (ILOAD = 10 mA).
2. Measure the output voltage/current pairs with various values of load resistance. Use
output currents ranging from zero to well beyond the point where the regulator "drops out
of regulation." Collect enough data to sketch a map of the regulator performance on the
VLOAD vs. ILOAD plane (put VLOAD on the vertical axis, and ILOAD on the horizontal). The
expected result is that the regulator will maintain the output voltage almost-constant with
regard to load current up to the "dropout current:" the output voltage will then fall
rapidly with further increase in load current.
3. Set up the circuit of Fig. 2 and adjust it for an output voltage of 5.0 V at no-load.
Measure the output voltage and current with load resistors of 500 and 50 .
4. Operate the voltage regulator for several minutes with a 50- load and feel Q2. (Is it
getting warm?)
39
Voltage Regulators
Report
1. Include and discuss your design calculations for the Zener diode voltage regulator of
Fig. 1.
2. Describe the range of output current over which Fig. 1 operates satisfactorily. Why does
it "drop out of regulation?"
3. Find the experimentally-measured dynamic output resistance of each regulator in the
following manner:
ROUT =
VLOAD
ILOAD
VLOAD,1 VLOAD,2
ILOAD,1 ILOAD,2
4. Use PSpice to estimate the output resistance of Figs. 1 and 2. Use ac simulation and
measure the resistance at midband (about 1 kHz). Include a 680- load resistor in Fig. 1,
and a 50 load resistor in Fig. 2. Model Z1 using a 1N750-series Zener diode, but edit
the breakdown voltage parameter to: (BV=6.8V). Model Q2 with a transistor having its
SPICE parameters set to: (IS=1E-14 BF=100 VAF=50V). Compare the SPICE results
with the experimentally-measured output resistances.
5. Use PSpice to determine the range of output current over which Fig. 2 operates
satisfactorily. Put a dc current source in place of the load resistor, and use a dc sweep to
plot the load voltage vs. the load current. (Truncate any data beyond the point at which
the load voltage is reduced to zero.) What is the maximum useful load current according
to this simulation? Calculate the power dissipation in Q2, and its junction temperature
for this amount of load current.
Voltage Regulators
MJE 371
Voltage Regulators
feeding power. (Nowadays, almost all electronic circuitry is fed from a voltage-regulated power
supply.) Note that the +12-V supply is the energy source which runs the whole system; it is not
usually a regulated source. One of the key specifications of a voltage regulator is its dynamic
output resistance, which indicates its ability to maintain a constant output voltage even as the
load current varies. This can be predicted theoretically by the same methods used to calculate
the output resistance of any shunt-sensing feedback amplifier.
Transistor Q2 is called a "series-pass transistor." This is because the main load current is
carried by Q2; the collector-emitter voltage drop on Q2 is equal to the difference between the
supply voltage (+12 V) and the load voltage. In general, Q2 dissipates a lot of heat, and thus
gets hot. The junction temperature of Q2 may be estimated by using a simplified heat-flow
model which makes the temperature drop between two locations directly proportional to the
amount of heat flowing from one to the other. (Note the analogy to Ohm's law.) For the
MJE 371, which is in a TO 225 package, mounted in free air, the "thermal resistance" between
the junction and the ambient air is approximately 83 C/W. The maximum safe junction
temperature for the long-term survival of this semiconductor is rated by the manufacturer at
150 C. The heat dissipated in the junction is calculated by P DISS = V CE $ I C (watts).
Therefore, assuming a laboratory ambient temperature of 25 C, the junction temperature is
estimated by: T J = P DISS $ (83 C/W ) + 25 C . The junction temperature of Q2 defines the
maximum load current that this regulator can safely deliver.
42
Experiment 12
Wien Bridge Oscillator
Introduction
The Wien bridge oscillator will be used to demonstrate the effects of positive feedback,
and the Barkhausen criterion for oscillation. Negative feedback is also used to stabilize the
transfer characteristics of the amplifier used by this oscillator.
Equipment Needed
y
Pre Lab
Read the appropriate section(s) of your electronics text dealing with the "Barkhausen
criterion" or "quasi-linear sinusoidal" oscillators.
Procedure
V out
1.
Construct the amplifier of Fig. 1. Measure its voltage gain V in at 1 kHz. Verify
that the amplifier is non-inverting, and that trim pot R4 adjusts its voltage gain from
something less than +3 to something more than +3. Use the 100-K series resistor
together with the function generator (FG) to measure the amplifier input resistance
Rin . (The expected value is about 180 K.)
2.
3.
Remove the FG, and wire Fig. 2 as indicated by the "OSCILLATE" position of the
switch. Adjust trim pot R4 until the circuit breaks into oscillation. Adjust R4 to
produce the minimum amplifier gain which maintains oscillation. Study the effects
of a slight decrease or increase of the amplifier gain about the borderline value
which just barely sustains oscillation. Measure the frequency of oscillation.
4.
Do not change the setting on R4. Remove the frequency-selective feedback network,
V out
and measure the amplifier gain V in as done previously in Fig. 1.
43
2.
3.
Calculate the amplifier gain required for oscillation at f o . Compare this with your
laboratory observations.
4.
Run a series of several PSpice simulations of the complete oscillator circuit. Use a
transient simulation, and parametrically step the total resistance RE = R3+R4 from
1.2 K to 1.6 K in 100- steps. Set the simulation run time at 50 ms with a
maximum step size of 0.1 ms. Do not omit the initial transient solution. Observe the
start-up process for the oscillator, and comment on it in your report.
V o (s )
44
45
46
Experiment 13
Analog/Digital Conversion
Introduction
Most digital signal processing systems are interfaced to the analog world through
analog-to-digital converters (A/D) and digital-to-analog converters (D/A). The purpose of this
experiment is to observe how the conversion process modifies the signal. A circuit board having
separate sample-and-hold (S/H), A/D and D/A sections is provided for this experiment. It allows
easy access to the signals at each stage of these conversion processes.
Equipment Needed
y
Function generator
Analog/digital conversion
circuit board
Pre Lab
Read the appropriate section(s) of your electronics text dealing with A/D and D/A
conversion, as well as S/H circuits.
Procedure
1.
2.
Vary the dc voltage at the analog input slowly from 0 V to 5 V. The eight LEDs
indicate the digital value of the converted analog input voltage. The 8-bit byte
should vary from 00h to FFh . Determine what happens when the analog input
voltage goes below zero, or above 5 V. Using an increment of 1 mV in the analog
voltage, carefully determine the voltage change (to the nearest 1 mV) required to
produce a 1-bit change in the digital output. This is the "quantization step size."
3.
Use a dc voltmeter connected between "analog ground" and "VREF" to measure the
internal reference voltage of the A/D and D/A converters. The result should be 5 V,
plus or minus 5%. Divide VREF by (28 -1) and compare with the quantization step
size measured in step 2. These two results should be equal.
To obtain dc output from the HP 33120A, press and hold the buttons for two waveforms, such
as sine and triangle, simultaneously for several seconds.
47
Analog/Digital Conversion
4.
Set the FG for a 100-mVpp 50-Hz triangle wave with a 100-mV dc offset2. Connect
channel 1 of the scope to show this analog input waveform, and connect channel 2 to
show the output voltage of the S/H stage, labeled "S/H OUT." Trigger from channel
1. You will need to use event averaging to obtain a low-noise display at 50 mV/div.
Record this display which documents the relationship between the low-frequency
input signal and a sampled version of it.
5.
Keep the same setup as the previous step, except move channel 2 to the "analog
output." This output shows the result of digitizing the sampled signal, and then
converting it back to analog form. Record this display which documents the
relationship between the low-frequency input signal and a sampled and quantized
version of it. Use this display to measure the quantization step size.
6.
7.
Set the FG for a 5-Vpp 500-Hz sine wave with a 2.5-V dc offset. View the input
signal on channel 1, and the sampled signal (S/H OUT) on channel 2. Be sure to
trigger the scope from channel 1. View the results both with and without event
averaging (8 averages is fine). The normally-acquired waveforms should clearly
show the effects of the sampling process on the signal. Record two sets off
waveforms, one event-averaged and the other without event averaging.
8.
With the event averaging turned off, slowly change the frequency of the sine wave
by +/- 10 Hz using 1-Hz increments. Your scope display should be showing signal
components at 500 Hz, and signal components at the sampling frequency ( 7 kHz).
These two frequencies could be commensurate (having an integer-ratio relationship),
or incommensurate. As you change the signal frequency slightly, observe what
happens when the two frequencies involved become commensurate. Record your
written comments.
9.
Set the scope time base for 1 ms/div, and change the triggering source to channel 2
with HF reject on. Channel 2 is still connected to the analog output. Increase the
frequency of the sine wave input from 0.5 kHz to 22 kHz, going in 0.1 kHz steps.
Observe what happens as you pass through the frequencies fS, 2 fS, and 3 fS. Record
your written comments.
1.
Discuss the meaning of "quantization step size." Give its numerical value for this
A/D converter as measured in steps 2 and 3. Label your waveforms recorded in step
Report
Remember that the actual output voltage amplitude will not agree with the programmed value
unless the output termination is set to "High Z."
48
Analog/Digital Conversion
Fig. 1 Top view of analog/digital conversion experiment circuit board. Observe polarity when
connecting the +/- 15-V power supplies.
5 to show where the quantization step size can be measured from these results.
2.
3.
49
Analog/Digital Conversion
50
Data Sheets
The following data sheets are included with this lab manual:
Part
Number
PN2222A
MJE371
LM741
Brief Description
(see data sheet)
npn BJT: small signal, 40 V, 1 A, 625 mW, TO-92 case,
complement to PN2907A
pnp BJT: power, 40 V, 4 A, 4 W, TO-225AA case,
complement to MJE521
Operational Amplifier: GBW=1 MHz, SR=0.5 V/s, Voff<7.5 mV
Additional data sheets are found in the Electronics Lab I lab manual.
51
52
MMBT2222A
PZT2222A
C
E
C
TO-92
SOT-23
SOT-223
Mark: 1P
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC
1.0
TJ, Tstg
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
Characteristic
RJC
RJA
Max
PN2222A
625
5.0
83.3
*MMBT2222A
350
2.8
**PZT2222A
1,000
8.0
200
357
125
Units
mW
mW/C
C/W
C/W
PN2222A
(continued)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
IC = 10 mA, IB = 0
40
V(BR)CBO
IC = 10 A, IE = 0
75
V(BR)EBO
IE = 10 A, IC = 0
6.0
ICEX
ICBO
IEBO
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 150C
VEB = 3.0 V, IC = 0
IBL
V
10
nA
0.01
10
10
A
A
nA
20
nA
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage*
35
50
75
35
100
50
40
300
0.6
300
0.3
1.0
1.2
2.0
V
V
V
V
Cobo
Output Capacitance
8.0
MHz
Cibo
rbCC
Input Capacitance
25
pF
150
pS
NF
Noise Figure
4.0
dB
Re(hie)
IC = 100 A, VCE = 10 V,
RS = 1.0 k, f = 1.0 kHz
IC = 20 mA, VCE = 20 V,
f = 300 MHz
60
10
ns
pF
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
25
ns
ts
Storage Time
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
60
ns
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
(continued)
V CE = 5V
400
125 C
300
200
25 C
100
- 40 C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
= 10
- 40 C
0.8
25 C
125 C
0.6
0.4
1
I
10
100
- COLLECTOR CURRENT (mA)
500
500
Typical Characteristics
0.4
= 10
0.3
125 C
0.2
25 C
0.1
- 40 C
10
100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 C
25 C
0.6
125 C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
500
100
CB
20
= 40V
CAPACITANCE (pF)
Collector-Emitter Saturation
Voltage vs Collector Current
10
1
0.1
f = 1 MHz
16
12
C te
8
C ob
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE ( C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
400
Ic
320
TIME (nS)
V cc = 25 V
240
160
240
ts
160
tr
t off
80
tf
80
t on
td
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
10
320
V cc = 25 V
0
10
Ic
I B1 = I B2 =
10
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
25
50
75
100
o
TEMPERATURE ( C)
125
150
1000
(continued)
V CE = 10 V
T A = 25oC
6
hoe
4
h re
2
h fe
h ie
0
10
20
30
40
50
I C - COLLECTOR CURRENT (mA)
60
(f = 1.0kHz)
V CE = 10 V
I C = 10 mA
h re
h fe
1.6
hoe
1.2
0.8
0.4
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
I C = 10 mA
T A = 25oC
1.25
h fe
1.2
1.15
h ie
1.1
1.05
1
h re
0.95
0.9
0.85
hoe
0.8
0.75
h ie
10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)
35
100
(continued)
Test Circuits
30 V
200
16 V
1.0 K
0
200ns
500
6.0 V
- 1.5 V
1k
30 V
1.0 K
0
200ns
50
37
TO-92 Packaging
Configuration: Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
CBVK741B019
PN2222N
NSID:
D/C1:
HTB:B
QTY: 10000
SPEC:
D9842
SPEC REV:
FSCINT
Label
B2
QA REV:
5 Reels per
Intermediate Box
(FSCINT)
Customized
Label
F63TNR
Label
QTY: 2000
SPEC:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
Style
Quantity
EOL code
Reel
2,000
D26Z
2,000
D27Z
Ammo
2,000
D74Z
2,000
D75Z
FSCINT
Label
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
DESCRIPTION
QUANTITY
NO LEAD CLIP
2.0 K / BOX
J05Z
NO LEAD CLIP
1.5 K / BOX
NO LEADCLIP
2.0 K / BOX
NO LEADCLIP
2.0 K / BOX
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
L34Z
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
Customized
Label
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
BULK OPTION
LEADCLIP
DIMENSION
J18Z
NO EOL
CODE
FSCINT Label
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
Hd
P
Pd
b
Ha
W1
d
L
H1 HO
L1
S
WO
W2
W
t1
P1 F1
DO
P2
PO
TO-92 Reel
Configuration: Figure 5.0
ITEM DESCRIPTION
SYMBOL
DIMENSION
0.098 (max)
Component Height
Ha
HO
H1
Pd
0.040 (max)
Hd
0.031 (max)
Component Pitch
PO
P1
P2
Lead Spread
F1/F2
Lead Thickness
0.429 (max)
L1
t1
WO
W1
0.035 (max)
W2
DO
0.004 (max)
D4
D1
D2
F63TNR Label
ITEM DESCRIPTION
SYSMBOL
MINIMUM
MAXIMUM
Reel Diameter
D1
13.975
14.025
D2
1.160
1.200
D2
0.650
0.700
Customized Label
(Small Hole)
W1
Core Diameter
D3
3.100
3.300
D4
2.700
3.100
W1
0.370
0.570
W2
1.630
W3
1.690
2.090
W3
W2
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Packaging Description:
SOT-23 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Human Readable
Label
Embossed
Carrier Tape
3P
3P
3P
3P
Standard
(no flow code)
TNR
3,000
D87Z
7" Dia
13"
187x107x183
343x343x64
24,000
30,000
0.0082
0.0082
0.1175
0.4006
Reel Size
Box Dimension (mm)
TNR
10,000
Note/Comments
H uman readable
Label
Carrier Tape
Cover Tape
Components
Trailer Tape
300mm minimum or
75 empt y poc kets
Leader Tape
500mm minimum or
125 empty pockets
P2
D1
D0
T
E1
F
E2
Wc
B0
Tc
A0
P1
K0
A0
B0
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
W
8.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
P1
P0
4.0
+/-0.1
4.0
+/-0.1
K0
1.30
+/-0.10
0.228
+/-0.013
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
5.2
+/-0.3
Tc
0.5mm
maximum
Component Rotation
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
Dim D
min
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
8mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 0.429
7.9 10.9
8mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 0.429
7.9 10.9
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
F63TNR Label
Antistatic Cover Tape
Static Dissipative
Embossed Carrier Tape
F852
014
F852
014
F852
014
F852
014
Standard
(no flow code)
TNR
2,500
D84Z
TNR
500
13" Dia
7" Dia
343x64x343
184x187x47
5,000
1,000
0.1246
0.1246
0.7250
0.1532
F63TNR Label
Note/Comments
F63TNR Label
LOT: CBVK741B019
QTY: 3000
FSID: PN2222A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
300mm minimum or
38 empty pockets
Leader Tape
500mm minimum or
62 empty pockets
P0
D0
T
E1
F
K0
Wc
E2
B0
Tc
A0
D1
P1
A0
6.83
+/-0.10
B0
7.42
+/-0.10
W
12.0
+/-0.3
D0
D1
1.55
+/-0.05
1.50
+/-0.10
E1
E2
1.75
+/-0.10
10.25
min
P1
5.50
+/-0.05
P0
8.0
+/-0.1
4.0
+/-0.1
K0
1.88
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.292
+/0.0130
9.5
+/-0.025
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
Component Rotation
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
Dim D
min
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 0.606
11.9 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 0.606
11.9 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
1:1
Scale 1:1 on letter size paper
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
DOME
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
FAST
FASTr
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. G
4 AMPERE
POWER TRANSISTOR
PNP SILICON
40 VOLTS
40 WATTS
. . . designed for use in generalpurpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry
circuitry.
DC Current Gain hFE = 40 (Min) @ IC = 1.0 Adc
MJE371 is Complementary to NPN MJE521
v
v
CASE 7708
TO225AA TYPE
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
Symbol
Value
Unit
VCEO
40
Vdc
CollectorBase Voltage
VCB
40
Vdc
EmitterBase Voltage
VEB
4.0
Vdc
IC
4.0
8.0
Adc
IB
2.0
Adc
PD
40
320
Watts
mW/_C
TJ, Tstg
65 to + 150
_C
Symbol
Max
Unit
JC
3.12
_C/W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
40
Vdc
ICBO
100
Adc
IEBO
100
Adc
hFE
40
OFF CHARACTERISTICS
ON CHARACTERISTICS
2.0%.
REV 2
MJE371
IC, COLLECTOR CURRENT (AMP)
10
100 s
1.0 ms
5.0
3.0
2.0
5.0 ms
dc
1.0
TJ = 150C
0.5
0.3
0.2
0.1
2.0
40
4.0
6.0 8.0 10
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
60
2.0
10
7.0
5.0
TJ = 25C
150C
1.6
3.0
VOLTAGE (VOLTS)
2.0
55C
1.0
0.7
0.5
0.3
TJ = 25C
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
0.4
0.2
0.1
0.01
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
Figure 3. On Voltage
D = 0.5
0.2
0.2
0.05
0.02
0.03
P(pk)
JC(t) = r(t) JC
JC = 3.12C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) JC(t)
0.1
0.1
0.07
0.05
0.01
t1
t2
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
50
100
200
500
1000
MJE371
PACKAGE DIMENSIONS
B
U
Q
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
V
G
S
R
0.25 (0.010)
D 2 PL
0.25 (0.010)
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 7708
TO225AA TYPE
ISSUE V
MJE371
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
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unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298
*MJE371/D*
MJE371/D
output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations.
The LM741C/LM741E are identical to the LM741/LM741A
except that the LM741C/LM741E have their performance
guaranteed over a 0 C to a 70 C temperature range, instead of b55 C to a 125 C.
Schematic Diagram
TL/H/9341 1
TL/H/9341 7
TL/H/9341
RRD-B30M115/Printed in U. S. A.
November 1994
Conditions
LM741A/LM741E
Min
TA e 25 C
RS s 10 kX
RS s 50X
Typ
Max
0.8
3.0
TAMIN s TA s TAMAX
RS s 50X
RS s 10 kX
TA e 25 C, VS e g 20V
TA e 25 C
5.0
Units
Typ
Max
2.0
6.0
7.5
g 15
3.0
g 15
TA e 25 C
30
30
20
200
70
85
500
20
200
nA
300
nA
nA/ C
80
80
0.210
TA e 25 C, VS e g 20V
1.0
TAMIN s TA s TAMAX,
VS e g 20V
0.5
6.0
500
80
1.5
0.3
2.0
0.3
TA e 25 C
g 12
50
TAMIN s TA s TAMAX,
RL t 2 kX,
VS e g 20V, VO e g 15V
VS e g 15V, VO e g 10V
VS e g 5V, VO e g 2V
32
2.0
500
nA
0.8
mA
MX
MX
TAMIN s TA s TAMAX
TA e 25 C, RL t 2 kX
VS e g 20V, VO e g 15V
VS e g 15V, VO e g 10V
mV
mV
mV
0.5
TAMIN s TA s TAMAX
mV
mV
mV/ C
g 10
1.0
Min
6.0
TAMIN s TA s TAMAX
Max
15
Input Resistance
LM741C
Typ
4.0
LM741
Min
g 12
g 13
50
200
25
10
g 13
V
V
20
15
200
V/mV
V/mV
V/mV
V/mV
V/mV
Conditions
LM741A/LM741E
Min
VS e g 20V
RL t 10 kX
RL t 2 kX
Typ
Max
10
10
25
Common-Mode
Rejection Ratio
TAMIN s TA s TAMAX
RS s 10 kX, VCM e g 12V
RS s 50X, VCM e g 12V
80
95
86
96
TAMIN s TA s TAMAX,
VS e g 20V to VS e g 5V
RS s 50X
RS s 10 kX
Transient Response
Rise Time
Overshoot
TA e 25 C, Unity Gain
Bandwidth (Note 4)
TA e 25 C
Slew Rate
TA e 25 C, Unity Gain
Supply Current
TA e 25 C
LM741A
LM741E
LM741
Min
Typ
Units
Max
V
V
TA e 25 C
TAMIN s TA s TAMAX
0.25
6.0
TA
VS
VS
LM741C
Max
g 15
Power Consumption
Typ
g 16
VS e g 15V
RL t 10 kX
RL t 2 kX
LM741
Min
0.437
1.5
0.3
0.7
e 25 C
e g 20V
e g 15V
80
g 12
g 14
g 12
g 14
g 10
g 13
g 10
g 13
35
40
0.8
20
25
V
V
25
mA
mA
dB
dB
70
90
70
90
77
96
77
96
dB
dB
0.3
5
0.3
5
ms
%
0.5
0.5
V/ms
MHz
1.7
2.8
1.7
2.8
mA
50
85
50
85
mW
mW
150
VS e g 20V
TA e TAMIN
TA e TAMAX
165
135
mW
mW
VS e g 20V
TA e TAMIN
TA e TAMAX
150
150
mW
mW
VS e g 15V
TA e TAMIN
TA e TAMAX
60
45
100
75
mW
mW
Note 1: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and Tj max. (listed under Absolute Maximum
Ratings). Tj e TA a (ijA PD).
Thermal Resistance
Cerdip (J)
DIP (N)
HO8 (H)
SO-8 (M)
100 C/W
100 C/W
170 C/W
195 C/W
N/A
N/A
25 C/W
N/A
Note 2: For supply voltages less than g 15V, the absolute maximum input voltage is equal to the supply voltage.
Note 3: Unless otherwise specified, these specifications apply for VS e g 15V, b 55 C s TA s a 125 C (LM741/LM741A). For the LM741C/LM741E, these
specifications are limited to 0 C s TA s a 70 C.
Note 4: Calculated value from: BW (MHz) e 0.35/Rise Time(ms).
Note 5: For military specifications see RETS741X for LM741 and RETS741AX for LM741A.
Note 6: Human body model, 1.5 kX in series with 100 pF.
Connection Diagrams
Ceramic Dual-In-Line Package
TL/H/93412
TL/H/9341 5
TL/H/9341 6
TL/H/93413
National Semiconductor
Europe
Fax: (a49) 0-180-530 85 86
Email: cnjwge @ tevm2.nsc.com
Deutsch Tel: (a49) 0-180-530 85 85
English Tel: (a49) 0-180-532 78 32
Fran3ais Tel: (a49) 0-180-532 93 58
Italiano Tel: (a49) 0-180-534 16 80
National Semiconductor
Hong Kong Ltd.
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Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductor
Japan Ltd.
Tel: 81-043-299-2309
Fax: 81-043-299-2408
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.