AO7403

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7403 uses advanced trench technology to provide

excellent RDS(ON), low gate charge, and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. It is ESD protected to 2KV HBM. Standard Product
AO7403 is Pb-free (meets ROHS & Sony 259 specifications).
AO7403L is a Green Product ordering option. AO7403 and
AO7403L are electrically identical.

VDS (V) = -20V

ID = -0.7A (VGS = -4.5V)
RDS(ON) < 470m (VGS = -4.5V)
RDS(ON) < 625m (VGS = -2.5V)
RDS(ON) < 900m (VGS = -1.8V)

SC-70
(SOT-323)
Top View
G

D
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A

TA=25C

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

0.22

TJ, TSTG

t 10s
Steady-State
Steady-State

-3

-55 to 150

Symbol
A

0.35

PD

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C

8
-0.5

ID
IDM

TA=25C
A

Units
V

-0.7

TA=70C

Pulsed Drain Current B

Power Dissipation

Maximum
-20

RJA
RJL

Typ
300
350
280

Max
360
425
320

Units
C/W
C/W
C/W

AO7403

Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

IGSS
VGS(th)

Gate-Body leakage current

ID(ON)

Gate Threshold Voltage

On state drain current

Conditions

Min

ID=-250A, VGS=0V

-20

-0.5

gFS
VSD
IS

Static Drain-Source On-Resistance

SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
tf
trr
Qrr

Turn-On Rise Time

Turn-Off DelayTime
Turn-Off Fall Time

10

-0.6

-0.9

388
542

470
660

519

625

666
1.7
-0.86

900

-1

S
V

-0.4

-3
TJ=125C

VGS=-2.5V, ID=-0.6A

VGS=-1.8V, ID=-0.5A
Forward Transconductance
VDS=-5V, ID=-0.7A
Diode Forward Voltage
IS=-0.5A,VGS=0V
Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance

Units

-1
-5

TJ=55C
VDS=0V, VGS=8V
VDS=VGS ID=-250A
VGS=-4.5V, VDS=-5V

Max

VDS=-16V, VGS=0V

VGS=-4.5V, ID=-0.7A
RDS(ON)

Typ

VGS=0V, VDS=-10V, f=1MHz

114
17
14

pF
pF
pF

VGS=0V, VDS=0V, f=1MHz

12

1.44
0.14
0.35

nC
nC
nC

6.5
6.5
18.2
5.5
10
3

ns
ns
ns
ns

VGS=-4.5V, VDS=-10V, ID=-0.7A

VGS=-4.5V, VDS=-10V,
RL=14.3, RGEN=3

IF=-0.7A, dI/dt=100A/s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-0.7A, dI/dt=100A/s

ns
nC

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The
SOA curve provides a single pulse rating.
Rev4: Aug 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO7403

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

4

6
-8V

-6V

25C

-4.5V

VDS=-5V

-4V

3
125C

-3.5V
-ID(A)

-ID (A)

4
-3V

-2.5V

VGS=-2.0V
0

0
0

0.5

-VDS (Volts)
Fig 1: On-Region Characteristics

1.6
Normalized On-Resistance

900
800

VGS=-1.8V

700
VGS=-2.5V

600
500
400

2.5

3.5

4.5

-VGS(Volts)
Figure 2: Transfer Characteristics

1000

RDS(ON) (m)

1.5

VGS=-4.5V

300

VGS=-1.8V
ID=-0.5A

1.4
VGS=-2.5V
ID=-0.6A
1.2
VGS=-4.5V
ID=-0.7A
1

0.8
0

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

900

1.0E+00
ID=-0.7A

800

1.0E-01

-IS (A)

RDS(ON) (m)

125C
1.0E-02

700
600
125C

25C
1.0E-03
1.0E-04

500
25C

1.0E-05

400

1.0E-06

300
0

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.4

0.8

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

AO7403

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

200

VDS=-10V
ID=-0.7A
Capacitance (pF)

-VGS (Volts)

4
3
2
1
0

Ciss

150

100
Coss
Crss

50

0
0.0

0.5

1.0

1.5

2.0

-Qg (nC)
Figure 7: Gate-Charge Characteristics

100s

10

10s

Power (W)

-ID (Amps)

RDS(ON)
limited

1ms

1.00
0.1

10ms

8
6
4

1s
10s

DC

0
0.001

0.01
1

10

100

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=425C/W

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

-VDS (Volts)

ZJA Normalized Transient

Thermal Resistance

20

TJ(Max)=150C
TA=25C

12

10.00

10

15

14

TJ(Max)=150C
TA=25C

0.1

10

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.00

0.10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000