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Product Summary
Features
New revolutionary high voltage technology
Extreme dv/dt rated
V DS
800
R DS(on)max @ Tj = 25C
0.29
88
nC
Q g,typ
Type
Package
Marking
SPP17N80C3
PG-TO220-3
17N80C3
Symbol Conditions
ID
Value
T C=25 C
17
T C=100 C
11
I D,pulse
T C=25 C
51
E AS
I D=3.4 A, V DD=50 V
670
E AR
I D=17 A, V DD=50 V
0.5
I AR
dv /dt
V GS
Power dissipation
P tot
T j, T stg
Mounting torque
Rev. 2.9
Unit
A
mJ
17
V DS=0640 V
50
V/ns
static
20
AC (f >1 Hz)
30
T C=25 C
227
page 1
60
Ncm
2008-10-15
SPP17N80C3
Maximum ratings, at T j=25 C, unless otherwise specified
Parameter
Symbol Conditions
IS
Value
Unit
17
T C=25 C
I S,pulse
51
dv /dt
V/ns
Parameter
Symbol Conditions
Values
Unit
min.
typ.
max.
0.55
leaded
62
260
800
870
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Soldering temperature,
T sold
wave soldering only allowed at leads
K/W
V (BR)DS
V GS=0 V, I D=17 A
V GS(th)
2.1
3.9
I DSS
V DS=800 V, V GS=0 V,
T j=25 C
25
V DS=800 V, V GS=0 V,
T j=150 C
150
I GSS
V GS=20 V, V DS=0 V
100
nA
R DS(on)
V GS=10 V, I D=11 A,
T j=25 C
0.25
0.29
V GS=10 V, I D=11 A,
T j=150 C
0.67
0.85
Gate resistance
Rev. 2.9
RG
page 2
2008-10-15
SPP17N80C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
2300
94
72
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
C o(tr)
210
t d(on)
25
Rise time
tr
15
t d(off)
72
Fall time
tf
12
Q gs
12
Q gd
45
Qg
88
117
V plateau
5.5
1.2
550
ns
15
51
V DD=400 V,
V GS=10 V, I D=17 A,
R G=4.7 ? , T j=25 C
ns
V DD=640 V, I D=17 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
t rr
Q rr
I rrm
1)
2)
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt=200A/s, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.9
page 3
2008-10-15
SPP17N80C3
1 Power dissipation
P tot=f(T C)
240
limited by on-state
resistance
200
10 s
101
160
1 s
100 s
I D [A]
P tot [W]
1 ms
120
DC
10 ms
100
80
40
10-1
0
0
25
50
75
100
125
150
10
100
1000
V DS [V]
T C [C]
ZthJC=f(tP)
parameter: V GS
100
60
20 V
50
10 V
0.5
0.2
I D [A]
Z thJC [K/W]
40
10-1
0.1
30
6V
0.05
20
0.02
5.5 V
0.01
5V
10
single pulse
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
t p [s]
Rev. 2.9
10
15
20
25
V DS [V]
page 4
2008-10-15
SPP17N80C3
5 Typ. output characteristics
parameter: V GS
parameter: V GS
35
1.4
20 V
1.3
30
10 V
1.2
6V
25
R DS(on) []
1.1
I D [A]
20
5.5 V
15
10 V
1
6.5 V
0.9
5V
10
6V
0.8
5.5 V
4.5 V
4V
4.5 V 5 V
0.7
0.6
0
0
10
15
20
25
10
20
V DS [V]
30
40
50
I D [A]
0.8
60
25 C
50
0.6
I D [A]
R DS(on) []
40
0.4
98 %
typ
30
150 C
20
0.2
10
0
-60
-20
20
60
100
140
180
T j [C]
Rev. 2.9
10
V GS [V]
page 5
2008-10-15
SPP17N80C3
9 Typ. gate charge
parameter: V DD
parameter: T j
102
10
150C (98%)
8
25 C
160 V
25C (98C)
101
640 V
I F [A]
V GS [V]
150 C
4
100
10-1
0
0
20
40
60
80
100
0.5
Q gate [nC]
1.5
V SD [V]
700
960
600
920
500
880
V BR(DSS) [V]
E AS [mJ]
11 Avalanche energy
400
300
840
800
200
760
100
720
680
25
50
75
100
125
150
T j [C]
Rev. 2.9
-60
-20
20
60
100
140
180
T j [C]
page 6
2008-10-15
SPP17N80C3
13 Typ. capacitances
104
18
16
Ciss
14
103
102
E oss [J]
C [pF]
12
Coss
10
8
6
Crss
101
4
2
100
0
0
100
200
300
400
500
600
700
800
V DS [V]
Rev. 2.9
100
200
300
400
500
600
700
800
V DS [V]
page 7
2008-10-15
SPP17N80C3
Definition of diode switching characteristics
Rev. 2.9
page 8
2008-10-15
SPP17N80C3
PG-TO220-3: Outline
Rev. 2.9
page 9
2008-10-15
SPP17N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Rev. 2.9
page 10
2008-10-15