Military Handbook

NOTICE
NOT MEASUREMENT
OF CHANGE
SENSITIVE
THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
1
e
MIL-HDBK-217F
NOTICE 2
28 February 1995
MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F

1.
.
r
The following pagesofMIL-HDBK-217F

New Page($)
Front Cover
...
Ml
have been revised and supersede the pagea Med.

superseded Page(6)
Front Cover
...
11!
iv
v
vi
Date
[ 2 December 199I
iv
v
vi
vii
.,.
Vlll
1-1
1-2
2-1
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2-4
2-5
2-6
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vii
New Page
1-1
9.7
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New Page
5-3
5-4
5-5
5-6
5-9
5-1o
5-23
5-24
I
10 July 1992
2 December 1991
2 December
6-1
6-2
7-3
7-4
2 December
1991
6-1
1991
6-2
7-3
7-4
1991
1991
1991
1991
1991
1991
1
1
10 Ju~ 1992
Reprinted without change
2 December 1991
2 IxoWnber 1991
10 Ju& 1992
2 Deoember 1991
2Deoember1991
2 December 1991
2 Deoember 1991
11-4, 11-5
12-1
12-1
2 December
12-2
11-1
11-2
11-!?
..-
11-2
11-3
1~.p
. .
December
Deoember
Deoember
Daoember
December
Deoember
11-4
11-1
1-
12
2
2
I2
12
12
2 December
2 December
[ 2 C)ecember
I 2 December
! 2 December
2 December
9-1 through 9-29

10-1 through 10-32
9-1 through 9-3

10-1 through 10-6
New Paae
2-8
53
54
5-5
5-6
5-9
5-1o
5-23
5-24
2 Deoember 1991
New Page ~
21
2-2
2-3
.
2-4
2-5
2-6
Date
2 December 1991
Reprinted without charme
2 Deoember 1991
I 2 December 1991
I 2 Deoember 1991
I 10 Julv 1992
. . .
-.
December
1991
1991
1991
1991
1991
1991
1991
1991
I
4
,
d
..
1
MI1-HDBK-217F
NOTICE 2
New Page(s)
Superseded
Date
12-3
12-3
12-4
12-5
13-1
13-2
---
12-4
12-5
13-1
13-2
---
15-1 through 15-3

16-1
r
16-2
I
#
16-4
A-1 through A-18
c-4
1991
1991
1991
1991
1991
z Uecember
1991
2 December 1991
2 December 1991
2 December 1991
i
New Page
17-1
17-1
10 JUIY 1992
I 2 December
2 December
2 December
2 December
- ?ecember
14-1 mrougn 144

14-5
15-1 through 15-6
16-1
New Page
14-1 through 14-2

14-3
Appendix
C-3
Date
Page(s)
c-3
c-4
2 December
2 December
2 December
] 2 December
1991
1991, 10 July 1992
1991
1991
2.
Retain the pages of this notice and insert before the Table of Contents.
3.
Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been
entered. The notice pages will be retained as a check sheet. The issuance, together with
appended pages, is a separate publication. Each notice is to be retained by stocking points until
the military handbook is revised or canceled.
Preparing Activity:
Air Force -17
Custodians:
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Navy - EC
Air Force -17
Project No, RELI-0074
Review Activities:
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Navy - SH, AS, OS
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15, 19,99
Army - AT, ME, GL

Navy - CG, MC, YD, TD
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AMSC NIA
DISTRIBUTION
STATEMENT
----
A: Approved
for publlc release; dlstnbutlon
=,
unlimited.
I-
r____
I NOT MEASUREMENT SENSITIVE]
MIL-HDBK-217F
2 DECEMBER
1991
SUPERSEDING
MIL-HDBK-217E, Notice 1
2 January
1990
MILITARY HANDBOOK
RELIABILITY PREDICTION OF
ELECTRONIC EQUIPMENT
THIS HANDBOOK IS FOR GUIDANCE ONLY -DO NOT

CITE THIS DOCUMENT AS A REQUIREMENT
! FSC-RELI
_.
AMSC NIA
DISTRIBUTION
STATEMENT
Ad Approved
for publlc release; drstrlbu!lcn
tinllmtted
MIL-HDBK-217F
DEPARTMENT
OF DEFENSE
WASHINGTONDC
20301
RELIABILITY
1, This standardization
with the assistance
2.
3.
PREDICTION
OF ELECTRONIC
handbook
was developed
of the military departments,
Every effort has been

prediction
procedures.
ensure its completeness
EQUIPMENT
by the Department
of Defense
federal agencies, and industry.
made to reflect the latest information

It is the intent to review this handbook
on reliability
periodically
to
and currency.
Beneficial
comments
(recommendations,
additions,
deletions)
and any
pertinent
data which may be of use in improving this document
should be
addressed to: Rome Laborato@ERSR,
Attm Seymour F. Morris, 525 Brooks
13441-4505,
by using
the
self-addressed
Rd.,
Griffiss
AFB,
NY
Standardization
Document
Improvement
Proposal (DD Form 1426) appearing
at the end of this document or by letter.
II
,.. .-.
.- .. -...,
-.-- ___
__
..
--.
-----
al..
-A--
I-*A
-*..A;a-
MIL-HDBK-217F
TA8LE
SECTION
1.1
1.2
1.3
OF CONTENTS
1: SCOPE
Purpose ................... ..... .... .... .. .. ...... ... ... ......... .. .. .... .................. ......... .... ........ ... .... ..
Application . ......... ....... ....... ...... .. ... ... ...... ........ ..... .............. ... .... .......... ............ ... .... ..
Computerized
Reliability Prediction .. .... .. ........ ... ..... ...... ........ .... ....... ....... ........... .... ..
REFERENCE
..................... ................... ....... ....... ... ..... ... ......
2-1
SECTION
2:
SECTION
3.1
3.2
3.3
3.4
3:
INTRODUCTION
Reliability Engineering ... .... ...... . .... ... ....... ........ .... .. .... ............... .......... ... .... .... .... .... ..
The Role of Reliability Prediction ........... ............................................................. .... ..
Limitations of Reliability Predictions ....... ....................... ........................... .................
Part Stress Analysis Prediction ................................................................................
3-1
3-1
3-2
3-2
SECTION
4:
. ..... .......................... ................. ..
4-1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
. .... ... ............ .... .................. ...... .... .... ..

INTRODUCTION
......... ................................................... ........
Memories .... .... .... ...... ........ ...... ..........0..... .... ...... .... ........... .................. ...... ..... ........ .
VHSIC/VHSIC
Like ................. ..... .... .............. ..... ...... ... .................... ... ....... .... .. .. ......
GaAs MMIC and Digital Devices . .. ... .... ..... ........ .... .... ........... ....... .............. ....... .... .... ..
Hybrids ... ... ............. ...... .... ........ ... ... ... ... .... .... .... .... ........... .......... ...... .... ........ ..........
SAW Devices ........ ..... ............ ... .. .... ...... ........ ....... .... ..... ............. ..... ...... . ...... .. .. ......
Magnetic Bubble Memories ...... .. ...... ... ... ........ ... .... .... ..... ...... ................ ......... .. ........
XT Table for All ................ .......... ..... .................... .....................0... ........... ...., *.**...... .,
5-1
5-3
5-4
5-7
5-8
5-9
5-1o
5-11
513
5.9
C2 Table for All .......................................................................................................
5-14
5.10
XE, ~ and ZQ Tables for All ............. ................................................*.**................0.
5-15
5.11
TJ Determination,
(All Except Hybrids) ......................*.*... ............................ ...*.....*,.
5-17
5.12
TJ Determination,
(For Hybrids) ...................................................................... .*.......
5-18
5.13
Examples ...............................................................................................................
5-20
RELIABILITY
5:
SECTION
5.1
DOCUMENTS
1-1
1-1
1-1
ANALYSIS
EVALUATION
MICROCIRCUITS,
Gate/Logic Arrays and Microprocessors
6:
DISCRETE
SEMICONDUCTORS
Discrete Semiconductors,
Introduction ... . ....... ... .. .. ......... ...... ................... ....00..... ... ..
Diodes, Low Frequency ..... ..... .. .. ... .. .... ... ... ..... .... .. ............ ........... ...... .... ....... .........,
Diodes, High Frequency (Microwave, RF) . ....... ..... .... ...... ..................... ... .... .... .... .... ..
Transistors, Low Frequency, Bipolar ..... ... .... .... .... .. ....... ..... ..................... ....... .... . .....
Transistors,
Low Frequency, Si FET ...... ........ ....... ...................0................................
Transistors,
Unijunction ........... .. ............ ................ ................................. ....... .... ......
Transistors, Low Noise, High Frequency, Bipolar ........... ... O.*......**.*.. ....... ......... .... ... .
Transistors,
High Power, High Frequency,
Bipolar .......0..... ....................... .................
Transistors, High Frequmcy, GaAs FET .. .... ..... .
SECTION
6.0
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
6,14
Laser Diode ... . ....... ....... ........... .. ......... .................. .... ... ... .... . ........ .
................ ..... ... .... .. ... ... ........ .... .. ..... ....... .............. ... ........... ..........
6-1
6-2
6-4
6-6
6-8
6-9
6-10
6-12
6-14
6-16
6-17
6-19
6-20
6-21
6-23
Example ...... ........................ .... ..... .... ... ... ....... .. .... ................ .................. . ...... . .........
6-25
. . . . . . . ...0.
Transistors, High Frequency, Si FET ..........................

Thyristors and SCRS .....................**.........................
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . ...0...
Optoelectronics,
Detectors,
Isolators,
6.15
. . . . . . . . . . . . .
Emitters ... .... ........ .............
Optoelectronics, Alphanumeric Displays .........0..................

Optoelectronics,
TJ Determination
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . ..*......
,,
.,
. 0......,,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
...
Ill
--I
MIL-HD8K-217F
NOTICE
TABLE
OF
CONTENTS
7-1
TUBEs
7:
................ .......... ............. .. .................. .... .....
All Types Except ?WT and Magnetron
Traveling
Wave ................................... ............... ......... .................... ........ ................
Magnetron ............ ... ............ .............. ....... ................. .. ....!..... ... ....... ....... ...............
sECTION
7.1
7.2
7.3
7-3
7-4
8-1
8-2
8-3
8-4
8-5
LASERs
8:
introduction ............ ..... ....... ...... .............. ............... ..... ........ ... .... .. .... ........ ....... ...... .
......... ....... ....... ..... ....... ....... .................. .. .............. ........ ... .... ...
Helium and Argon
.. ........ ....... .. ........ ............ ...... ... .......... .. .................. ......... ..
Carbon Dioxide, Sealed
............ .... ....... ......................................... ...... ....... ..........
Carbon Dioxide, Flowing
........ ..... ..................... .... ... ............ .............. ...
Solid State, ND:YAG and Ruby Rod
SECTlON
8.0
8.1
8.2
8.3
8.4
sECTION
9.1
RESISToRs
9:
Resistors . ... .......... ..... ........ ...... ........ ....... .................... ....... .... .... .. ......o=~... ...-....
9-1
sECTION
CAPACITORS
10:
Capacitors ............ .... ... ...... .. ............... ... ...... ................ ......... ....*.... ......0.... ....... ....
.. ...... ... ...... ........ ............... ......... ........... ........... ..... . .... ........... .
Capacitors,
Example
10-1
10-6
sECTIO~
11.1
11.2
11.3
INDUCTIVE
DEVICES
11:
........ ..... ..... ...... .... .... ....... ....... .............. ..................... ................. ...... .
Transformers
Colh,.. . . ....... ..... ... .................... ........ ............
..................
..................................
..........
.............
......... ...... ..........
... ......... ...
.. .
Determination
of l-lot Spot Temperature
11-1
11-3
11-4
sECTlol
12.1
12.2
12.3
ROTATING
DEVICES
12:
Motors . .. ............. .... ............. ... .... .. ...... ..................... ............*.* ... .. ...... .................
12-1
10.1
10.2
12-4
12-5
....................................................... ......*..... .......... .*.*

Synchros and Resolvem
............................................ ...............................$.................
Elapsed lime Meters
sECTIO
13.1
13.2
RELAys
Mechanical .. ............. ........ ...... .... ... ..................... ..... ................. ...........0..... ..... ........
.......... ........ ................ ................ ... .......................... ... ...
Solid State and Time Delay
13-1
13-3
sECTlc )N
14.1
14.2
SWITCHEs
14:
Sw[tche . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...*... ....o...~ . . . . . . . . . . . . . . .
Circuit Breakers ................. ..... ..... ...........0..,,..,.. . .......... ....... .... ... ...... .......... ... ..
14-1
14-2
SECTI( )N
15.1
CONNECTORS
15:
...... ........ ........ .... ...... ................. ... .......... ..... .... .. ......... .... .. ....
Connectors,
General
. ..... ...... .... ... ...... .............. .............. .......*.... ...*...*** .. *..*.*.*. .....
Connectors,
Sockets
13:
15.2 )
15-1
15-3
16-1
16-2
INTERCONNECTION
ASSEMBLIES
......... .................. ........ .. .....
sECTl~ ON 16:
Interconnection
Assemblies with Plated Through Holes ................... ......................
16. I
Interconnection
Assemblies,
Suflace Mount Technology
16.: ~
17-1
SECTI ON
17. 1
CONNECTIONS
17:
...... ............ ....... ....... .... ........................ .................
Connections
SECT! ION
18. 1
METERS
Meters, Panel .................................!....... .................................................................
18-1
SECT ION
19 .1
QUARTZ CRYSTALS
19:
.................................................
Quartz C~sta\s .....................................................
19-1
. . ..0......
. . . . . . . . . . . . . . . . . .
18:
Supersedes
page w of Revtslon
Iv
>
--1
-----
--
- -
--
-n
l-l
--l
--,
..*
.Tc ,
MIL-HDBK-217F
NOTICE 2
TABLE
OF
CONTENTS
SECTION
20.1
LAMPS
20:
Lamps .. . ..... .. .......... .............. ........... .... .... .... ....................... .. ...... ... .... .... ... .............
20-1
SECTION
21.1
ELECTRONIC
FILTERS
21:
Electronic
Filters, Non-Tunable ........ ... ........ ......... ................................................... .
21-1
SECTION
22.1
FUSES
22:
Fuses. . .... .. .... ...... ................ ......... .. ... ........ ..... .... ......... .... .... ..... ....... .... .... .............
22-1
SECTION
23.1
MISCELLANEOUS
PARTS
23:
Miscellaneous Parts ............. ... .......... .. ............... .... ........ ..... ....... .... .... .... ... .. ........ ....
23-1
. .. .... .. ..... .... ...*.. ... .. ...*... ... ...
A-1
APPENDIX
A:
PARTS
COUNT
RELIABILITY
APPENDIX
B:
VHSIC/VHSICOLIKE
APPENDIX
C:
BIBLIOGRAPHY
AND
3-1:
3-2:
4-1:
6-1:
6-2:
CMOS
(DETAILED
MODEL)
.. ..... .... ...
OF
B-1
c-1
TABLES
Parts with Mu)ti-Level Quality Specifications ......................... ...............................

Environmental
Symbol and Description ........................................*. ....................
3-3
3-4
4-1
Reliability Analysis Checklist ...... .......................................................................

Defautt Case Temperatures for All Environments (C) . ..... ............ ... ..... . ............ ...
6-23
Approximate Thermal Resistance for Semicond@or

Devices
Sk= .......*.*.......**......*...................*...*..*...........................
in Various Pa*@
6-24
LIST
Figure 5-1:
Figure 8-1:
VLSI
. .................. ... .... ... ................. ........ ...... .... .... ...... ...............
LIST
Table
Table
Table
Table
Table
PREDICTION
OF
FIGURES
Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate .......... .... ..
Examples of Active Optical Suffaces . ........... ... ................ ............ ..... ... ....... ..... ...
5-18
8-1
V
Supersedes
,.. . -
racinclucl
page v of Revision
I VLRY
I rlmllllulk
F
I IWUIIIICIIIICLIL
~ a IVusw
M! L-HDBK-217F
NOTICE 2
FOREWORD
1.0
THIS
HANDBOOK
NOT BE CITED
AS A
HAVE
TO COMPLY.
IS
FOR
GUIDANCE
IF
REQUIREMENT.
MIL-HDBK-217F,
Notice
2 provides
the
study (see Ref. 37 listed in Appendix C):
b
Revised
resistor
and capacitor
IT
changes based
following
models,
THIS
HANDBOOK
SHALL
CONTRACTOR
DOES
NOT
ONLY.
IS, THE
including
upon a recently completed
new models to address
Updated failure rate models for transformers,

connectors,
printed
circuit
boards
(with
connections.
A new model to address
A revised Traveling Wave Tube model based upon data supplied by the Electronic Industries
Association Microwave Tube Division.
This further lowers the calculated failure rates beyond
the earlier modifications
made in the base document (MIL-HDBK-217F,
2 December 1991).
Revised
the Fast Recove~
reevaluation of Ref. 28.
surface
Notice
2.0
MIL-HDBK-217F,
errors in the basic F Revision.
mounted
Power
1, (10 July
coils, motors, relays,

and without
surface
chip devices.
switches, circuit breakers,

mount technology)
and
technology solder connections.
Rectifier
1992)
base
was
failure
issued
rate
downward
to correct
minor
based
New failure rate prediction models are provided for the following
typographical
document),
(2 December
1991) provided the
MIL-tiDBK-217F,
(base
3.0
changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C):
1.
on
nine major
following
classes
of
microcircuits:
Monolithic
Bipolar
Digital and Linear Gate/Logic
Monolithic
MOS Digital and Linear
Monolithic
(including
Controllers)
Monolithic
Bipolar and MOS Memory Devices
Monolithic
GaAs Digital Devices
Monolithic
GaAs
Hybrid
Magnetic
Surface
Bipolar
and MOS Digital
MMIC
Gate/Logic
Array Devices
Array Devices
Microprocessor
Devices
Devices
Microcircuits
Bubble
Acoustic
Memories
Wave Devices
new prediction
models for bipolar and MOS
The 2 December
1991 revision provided
up to 60,000,
linear microcircuits
with up to 3000
microcircuits
with gate counts
and co-processors
up to 32 bits,
transistors,
bipolar and MOS digital microprocessor
memory devices with up to 1 million bits, GaAs monolithic microwave
integrated circuits
(MMICS) with up to 1,000 active elements,
and GaAs digital ICS with up to 10,000
The C, factors
have been extensively
revised to reflect new technology
transistors.
dewces with Improved reliability, and the activation energies representing
the temperature
sensltwlty of the dice (nT) have been changed for MOS devices and or memories
The
Supersedes
wlBaiaKa
Ufi
II M1iw
~av~
page VII of Revision
F, NotIce 1
Vll
MIL-HDBK-217F
NOTICE 2
FOREWORD
C2 factor remains
unchanged
from the prewous
Handbook
version,
but includes
pin grid
arrays and surface mount packages using the same model as hermetic, solder-sealed
dual
New values have been included for the quality factor (XQ), the learning
in-hne packages.
factor
(~~), and the environmental!
factor
(nE).
The model
for hybrid
microcircuits
has
been revised to be simpler to use, to delete the temperature

dependence
of the seal and
interconnect
failure
rate contributions,
and to provide a method of calculating
chip
junction temperatures.
2.
A new model for Very High Speed Integrated

Circuits (VHSIC/VHSiC
Large Scale Integration (VLSI) devices (gate counts above 60,000).
3.
The reformatting
4.
A reduction
5.
A revised
6.
Rewsed
models for
Industries Association
of the entire handbook
in the number
failure
and
Very
to make it easier to use.
of environmental
rate model for Network
Like)
factors
(zE) from 27 to 14.
Resistors.
TWS
and Klystrons
based
Microwave Tube Division.
on data
supplied
by the
Electronic
MIL-HDBK-217F
NOTICE 2
1.0
SCOPE
- This handbook
Is for guidance
only and shall
not be cited
as a
Purpose
1.1
requirement.
ff it la, the contractor
does not have to comply
(see Page 1-2).
T he
purpose of this handbook is to establish and maintain consistent and uniform methods for estimating
the inherent reliability
(i.e., the reliability of a mature design) of military electronic
equipment
and
systems.
It provides a common basis for reliability predictions during acquisition programs for military
It also establishes a common basis for comparing and evaluating
electronic systems and equipment.
The handbook is intended to be used as a tool
reliability predictions of related or competitive designs.
to increase the reliability of the equipment being designed.
1.2
Appllcatlon
- This handbook
contains two methods of reliability
prediction
- Part Stress
Analysis in Sections 5 through 23 and Parts Count in Appendix A. These methods vary in degree
of information needed to apply them. The Parl Stress Analysis Method requires a greater amount of
detailed information and is appl=ble
during the later design phase when actual hardware and circuits
are being designed. The Parts Count Method requires less information, generally part quantities,
quallty level, and the application environment. This method is applicable during the early design phase
In general, the Parts Count Method will usually result in a more
and during proposal formulation.
consewative
estimate (i.e., higher failure rate) of system reliability than the Parts Stress Method.
Supersedes
page
1-1
of Revision
1-1
MI L-I-IDBK-217F
NOTICE 2
1.0
SCOPE
COMMANDER,
to s~
printing
Prior
Point
for
be made:
the
ACrOSS
EZIS
lat.
the
in
cover
HAZUX)BOOK
subject
aotico
the
ard tistrtitia,
BIG
to
BOLD BLACK LZITERS
XS FOR ~
tha
follas
s.
mm=
Redictim
DoD
- Au
of
Six@O
Stock
additions
nwt
bert
CAM:
mmrm~s
-Y.
mcunENT~A~
xn the FOREWORD (Page vii of Notice 2 ) , ~agr~h
THIS HANDBOOK 1S POR GUIDAN= ONLY. msEANDBoox~~
~R
IFrrxs,
m
BE CXTZD AS A ~.
HAVE
RL/ERsR,
-li~ili~
Notice 2 to ~-xDBK-217F,
Elecwodc
lz@gX=t
, EOjact
REU-0074
SUBJECT:
LABORA~RY (AFMC), AlTN:
R-
1.0:
M
mEs NOT
COMPLY.
MS
entry for
the SCOPE* pua4m@
1.1 (~e)
:
handbook is for guibce
only
and shall not be citd
as a
the contrmtor
&e8 not have to
If it ia,
requir~t.
coa@y .
Add
an
If YOU have anY uuestim

contact
Ma. Carla
J~
.
thb
r~
Waltez
B.
Be%
+
Chaiman,
Defense Standada
reQueat , plea-
, 11
=mrQV--t
Council
cc :
OVSD(A&T)~~&E/SE,
Mr. M. Zsak
New Page
1-2
-.
Ma
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
This handbook cites some specifications

which have been cancelled or which describe devices that are
not to be used for new design. This information is necessary because some of these devices are used in
so-called off-the-shelf
equipment which the Department of Defense purchases.
The documents cited
in this section are for guidance and information.
TITLE
SECTION #
SPECIFICATION
10.1
MIL-C-5
Capacitors, Fixed, Mica Dielectric, General Specification for
M! L-R-l 1
9.1
Resistor, Fixed, Composition (Insulated), General Specification for
MIL-R-19
9.1
Resistor, Variable, Wirewound (Low Operating Temperature) General

Specification for
MIL-C-20
10.1
MIL-R-22
9.1
Resistor, Variable, Wirewound (Power Type), General Specification for
MIL-C-25
10.1
Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed

in Metal Cases), General Specification for
MIL-R-26
9.1
MIL-T-27
11.1
Transformer and Inductors (Audio, Power, High Power Pulse),

General Specifiition
for
MIL-C-62
10.1
Capacitor, Fued
MIL-G81
10,1
Capacitor, Variable, Ceramic Dielectric, General Specification for
MIL-C-92
10.1
Capacitor, Variable, Air Dielectric (Trimmer), General Specification for
MIL-R-93
9.1
MIL-R-94
9.14
Resistor, Variable, Composition, General SpecMcation for
MIL-V-95
23.1
Vibrator, Interrupter and Self-Rectifying, General Specification for
W-L-1 11
20.1
Lamp, Incandescent Miniature, Tungsten Filament
W-C-375
14.5
Circuit Breaker, Molded Case, Branch Circuit and Sewice
W-F- 1726
22.1
Fuse, Cartridge, Class H (this covers renewable and nonrenewable)
W-F-1814
22.1
Fuse, Cartridge, High Interrupting Capacity
MIL-C-3098
9.1
MIL-C-3607
5!1
Capacitor, Fwed, Ceramic Dielectric (Temperature Compensating),

Established Reliability and Nonestablished Reliability, General
Specification for
Resistor, Ftxad, Wirewound (Power Type), General Specif~ation for
Electrolytic (DC, Aluminum, Dry Ekctrotyte,

Poladzad), General Specification for
Resistor, Fixed, Wirewound (Accurate), General Specification for
Cqmtal Unit, Quartz, General Specification for

Connector, Coaxial, Radio Frequency, Series Pulse, General
Specifications
MIL-C-3643
Supersedes
51
Connector, Coaxial, Radio Frequency, Series HN and Associated

Fittings, General Specification for
page 2-1 of Revision F
-- 3..
for
tiz~
2-1
a
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-G3650
15.1
MIL-C-3655
15.1
Connector, Coaxial, Radio Frequency, Series LC
Cormector, PIIJg and Receptacle, Electrical (Coaxial Series Twin) and

Associated Fittings, General Specification for
2-2
MIL-S-3786
14.3
Swrtch, Rotary (Circuit Selector, Low-Current (Capacity)), General

Specification for
MIL-S3950
14.1
Switch, Toggle, Environmentally Sealed, General
MIL-G3965
10.1
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, General

Specification for
MIL-C+O15
15.1
Connector, Electrical, Ckoular Threaded, AN Type, General

Specification for
MIL-F-5372
22.1
Fuse, Current Limiter Type, Akcraft
MIL-S-5594
14.1
Switches, Toggle, Electrically Held Sealed, General Specification for
MIL-R-5757
13.1
Relays, Electromagnetic,
MIL-R-6106
13.1
Relay, Electromagnetic (Including Established Reliability (ER) Types),

General Specification for
ML-L-6363
20.1
Lamp, Incandescent,
Specification for
Aircraft Service, General Specification for
Switches and Swttch Assemblies, Sensitive and Push (Snap Action),

General Spedkatiin
for
MIL-S-8805
14.1, 14.2
MIL-S-8834
14.1
Switches, Toggle, Positive Break General Specification for
MIL-S-8932
14,1
Switches,
MIL-S-9395
14,1
Switches, Pressure, (Absolute, Gage, and Differential), General

Specification for
MIL-S-9419
14.1
Switch, Toggle, Momentary Four Position On, Center Off, General

Specification for
MIL-M-10304
18.1
Meter, Electrical Indicating, Panel Type, Ruggedized, General

Specificatmn for
MIL-R-10509
9.1
MIL-GI0950
10,1
Capacitor, Fixed, Mka Dielectric, Button Style, General Specification

for
MIL-C-11OI5
10.1
Capacitor, Fixed, Ceramic Dielectric (General Purpose), General

Specification for
MlL-C-l 1272
10.1
Capacitor, Fixed, Glass Dielectric, General Specification for
Pressurer Aircraft, General Specification for
Resistor, Fixed Film (High Reliability), General Specification for
Supersedes
MIL-HDBK-217F
NOTICE 2
2.0
10.1
MlL-C-l 1693
REFERENCE
DOCUMENTS
Capacitor,
Feed Through, Radio Interference Reduction AC and DC,
(Hermetkally Sealed in Metal Cases) Estabiishd
Reliability, General Specificatbn for
and Nonestablished
MlL-R-l 1804
9.1
MIL-S-12211
14,1
Switch, Pressure
MlL-S-l 2285
?4.1
Switches, Thermostatic
MIL-S-12883
15.3
Sockets and Accessories for Plug-h Electronic Components, General

Specification for
MIL-G12889
10.1
Capacitor, By-f%ss, Radio - Interference Reduction, Paper Dielectric,

AC and DC, (Hermetically Sealed in Metaiiic Cases), General
Specificatbn for
Resistor, Fixed, Film (Power Type), General Specificatmn for
M!L-R-12934
9.1
MIL-S-13484
14.1
Switch, Sensitive:
MIL-C-13516
14.2
Circuit Breakers, Manual and Automatic (28 Voits DC)
MIL-S-13623
14.1
Switches, Rotary: 28 Voit DC
MIL-R-13718
13.1
Reiays, Electromagnetic
MIL-S-13735
14.1
Switches, Toggle: 28
MIL-G14409
10.1
Capacitor, Vadable (Piston Type, Tubuiar Trimmer), General

Spectfioatbn for
MIL-F-15160
22.1
Fuse, instrument, Power and Teiephone
MIL-S-1S291
14.1
Switches, Rotary, Snap Action and DetenVSpring Return Action,

MIL-C-15305
11.2
Coils, Electrical, Fixed and Variable, Radio Frequency, Generai

Specification for
MIL-G15370
15.1
Couplers, Directional, Generai Specification for
MIL-F-15733
21.1
Fiiters and Capacitors, Radio Frequency Interference, Generai

Specification for
MIL-S-15743
14.1
Switches,
MIL-G18312
10.1
Capacitor, Fixed, Metallized (Paper, Paper Piastic or Piastic Film)

Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General
Resistor, Variabie, Wirewound, Precision, General Specification for
Supersedes
21.1
page 2-3 of Revision
24 Volt DC
volt DC
Rotary, Enclosed
Specification for
MIL-F-18327
30 Votts Direct Current Maximum, Waterproof
Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual
Functioning, General Specification for
2-3
tvllL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
ML-R-18546
9.1
Resistor, Fixed, Wkewound (Power Type. Chassis Mounted), General

Specification for
MlL-S-l 9500
6.0
Semiconductor Device, General Specification for
MIL-R-19523
13.1
Relays, Control
MIL-R-19648
13.1
Relay, Time, Delay, Thermal, General Specif~atkmfor
MIL-G19978
10.1
Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically

SeaJed in Metal, Ceramic or Glass Cases), Established and
Nonestablished ReliaMlity, General Specificatbn for
MIL-T-21038
11.1
Transformer, Puke, Low Power, General Specification for
MIL-G21097
15.1
Connedor, Electrical, Printed Wking Board, General Purpose, General

Specification for
MIL-s-212n
14.1
Switches, Lquid Level, General Specification for
MIL-G21617
15.1
Ccmnectors, Plug and Receptacle - Electrical Rectangular, Polarized

Shell, Miniature Type
MIL-R-22097
9.1
MIL-S-22614
14.1
MIL-R-22664
9.2
MIL-S-2271O
14.4
Resistor, Variable, Nonwirewmnd

Specification for
(Adjustment Types), General
Switches, Sensitive
Resistor, FMed, Film, Insulated, General Specifioatiin
Switches, Code Mcating
for
Wheel (Printed Circuit), (Ttwmbwheel,
In-1ine
and Pushbutton), General Specification for
2-4
MIL-S-22865
14,1
Switches, Pushbutton, Illuminated, General Specifution for
MIL-G22992
15.1
Connectors, Plugs and Receptacles, Electrical, Water-ProOf, Quick

HeavyDutyType, General Specification for
Di-nnect,
MIL-C23163
10.1
Capacitors, Fixed or
Specification for
MIL-CX23269
10.1
Capacitor, Fixed, Glass Dielectric, Established Reliability, General

Specification for
MIL-R-23285
9.1
Resistor, Variable, Nonwirewound, General Specificatmn for
MIL-F-23419
22.1
Fuse, Caflridg8, Instrument Type, General Specification for
MIL-T-23648
9.1
Variable,
Vacuum or Gas Dielectric, General
Resistor, Thermal, (Thermally Sensitive Resistor), Insulated, General

Specification for
MS-24055
15.1
Connector, Plug-Receptacle,
Female, 7.5 Amps
Electrical, Hexagonal, 9 Contacts,
MS-24056
15.1
Connector, Plug-Receptacle,
7.5 Amps
Electrical, Hexagonal, 9 Contacts, Male,
Supersedes
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-24308
15.1
Connectors, Eiectric, Rectangular, Nonerwironmental, Miniature,

Polarized Shell, Rack and Panel, General Specdicatbn for
MIL-S-24317
14,1
Switches, Mu!tistation, Pushbutton (Illuminate

MIL-C-25516
15.1
Connector, Electrical, Miniature, Coaxial, Environment Resistant Type,

MIL-C-26482
15.1
Connector, Electrical (Wcular, Miniature, Quick Disconnect,

Environment Resisting), Receptacles and Plugs, General Specificatbn
for
ML- C-26500
15.1
Connectors, General Purpose, Electrical, Miniature, Ckcular,

Environment Resisting, General Spedficatbn for
9.1
MIL-R-27208
and hlon-l!luminated),
Resistor, Variable, Wlrewound, Nonprecison, General
Specificatmn for
MIL-C-28731
15.1
Connectors, Electrical, Rectangular, Removable Contact, Formed

Blade, Fork Type (For Rack and Panel and Other Applicatbns), General
Specification for
MIL-C28748
15.1
Connector, Plug and Receptacle, Rectangular, Rack and Panel, Solder

Type and Crimp Type Contacts, General Specifiiion
for
MIL-R-28750
13.2
Relay, Sold State, General Specification for
MIL-C-28804
15.1
Connectors, Plug and Receptacle, Electrio Rectangular, High Density,

Polarized Center JackScrew, General Specification for, Inactive for New
Designs
MIL-G28840
15.1
Connector, Electrical, Circular Threaded, High Density, High Shock

Shipboard, Class D, General Specification for
MIL-M-3851O
5.0
15.3
MIL-S-385=
Microcircuits, General Specification for

Sockets, Chip Carrier, Ceramic, General Specification for
MIL-H-38534
5.0
Hybrid Micmcirdts,
MIL-I-38535
5.0
Integrated Wcuits
SpedficatiOn for

(Microcircufis) Manufacturing, General
MIL-G38999
15.1
Connector, Ekctrical, Circular, Miniature, High Density, Quick

Disconnect, (Bayonet, Threaded, and Breech Coupling) Environment
Resistant, Removable Crimp and Hermetic Solder Contacts, General
Specification for
MIL-G39001
10.1
Capacitor, Fixed, Mica-Dielectric, Established Reliability, General

Specification for
MIL-R-39002
9.1
MIL-C-39003
10.1
Supersedes
Resistor, Variable, Wkewound, Semi-Precision,

for
General Specification
Capacitor, Fixed, Electrolytic, (Solid Electrolyte), Tantalum,

Established Reliability, General Specification for
2-5
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
2-6
Resistor, Fixad, Wirewound (Accurate), Established Reliability, General

Specification for
MIL-R-39005
9.1
MIL-G39006
10.1
MIL-R39007
9.1
Resistor, Fixed, Wkewound (Power Type), Established Reliability,

MIL-R-39008
9.1
Resistor, Fixed, Composition (Insulated), Established Reliability,

MIL-R-39009
9.1
Resistor, Fixed, WmMVOund (Power Type, Chassis Mounted)

Established Reliabiiii, General Specification for
MIL-G3901O
11.2
Coils, Electrical, FMed, Radio Frequency, Molded, Established

Reliability, General Specification for
MIL-C-39012
15.1
Connector, Coaxial, Radio Frequency, General Specification for
MILC-39014
10.1
Capacitor, Fixed, Ceramic Dielectric (General Purpose), Established

Reliability, General Specification for
MIL-R-39015
9.1
MIL-R-39016
13.1
MIL-R-39017
9.1
MIL-C-39018
10.1
Capacitor, Fwed, Ekctrofytic (Aluminum Oxide), Established Reliability

and Nonestablished Reliability, General Specification for
MIL-G39019
14.5
Circuit Breakers, Magnetic, Low Power, Seaied, Trip-Free, General

Specification for
MIL-C-39022
10.1
Capacitors, Fixed, Metaiiued, Paper-Plastic Film or Piastic Film

Dielectric, Direct and Alternating Current (Hermetically Sealed in Metal
or Ceramic Cases), Established Reliability, General Specification for
MIL-R-39023
9.1
Resistor, Variabie, Nonwirewound, Precision, Generai Specification for
MIL-R-39035
9.1
Resistor, Variable, Nonwirewound (Adjustment Type), Established

Rel.&ility, General Specification for
MIL-S-45885
14.1
Switch, Rotary
MIL-C-49142
15.1
Connectors, Piugs and Receptacle, Eiectricai Triaxiai, Radio

Frequency, Generai Specification for
MIL-G55074
15.1
Connectors, Plug and Receptacle, Teiephone, Eiectrcal, Subassembly

and Accessories and Contact Assembiy, Electrical, General
Specification for
MIL-P55110
15.2
Printed Wiring Board, General Specifi~tion
MIL-R 55182
91
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte) Tantalum

Established Reliability, General Specification for
Resistor, Variable, Wlrewound (Lead Screw Actuated), Established

ReliatWty, Genera! Specification for
Relay, Electromagnetic,
for
Established Reiiabiiity, General Specification
Resistor, Fued, Fiim (Insulated), Established ReiiabNty, General

Specif.kdon
for
Resistor,
FIxd,
for
Film, Es!abl(shed Reliability, General Specification for
Supersedes
MII--HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-55235
15.1
Connectors, Coaxial, Radio Frequency, Series TPS
MIL-C-55302
15.1
Connector, Printed Circuit, Subassembly
MIL-A-55339
15.1
Adaptors, Connector, Coaxial, Radio Frequency, (Between Series and

Within Series), General Specification for
MIL-R-55342
9.1
MIL-C-55365
10.1
Capacitor, Fixed, Electrolytic (Tantalum), Chip, Established Reliability,

MIL-S-55433
14.1
Swhches, Reed, General Specification for
MIL-C-55514
10.1
Capacitors, Freed, Plastic (or Metallized Plastic) Dielectric, DC or DCAC, In Non-Metal Cases, Established Reliability, General Specification
for
)
MIL-G55629
14.5
Circuit Breaker, Magnetic, Unsealed, or Panel Seal, Trip-Free, General

Specification for
MILT-55631
11.1
Transformer, Intermediate Frequency, Radio Frequency and

Discriminator, General Specification for
MIL-G55681
10,1
Capacitor, Chip, Multiple Layer, Fixed, Unencapsulated Ceramic

Dielectric, Established Reliability, General Specification for
15.1
Connedor, Electriil,
MIL-S-81551
14.1
Switches; Toggle, Hermetically Sealed, General Specification for
MIL-C-81659
15.1
Connectors, Electrical Rectangular, Crimp Contact
MIL-S-82359
14.1
Switch, Rotary, Variable Resistor Assembly Type
MIL-(X3383
14.5
Circuit Breaker, Remote Control, Thermal, Trip-Free, General

Specification for
MIL-G8151
and Aaessories
Resistors, Fixed, Film, Chip, Established Reliability, General

Specification for
Circular, Hgh Densky, Ouick Disconnect,

Environment Resisting and Accessories, General Specification for
MIL-R-83401
9.1
MIL-C-83421
10,1
Capacitors, Freed Metallued Plastii Film Dielectric (DC, AC or DC

and AC) Hermetically sealed in Metal or Ceramic Cases, Established
Reliabil~, General Specification for
11.2
Coils, Radio Frequency, Chip, Fixed or Variable, General Specification

for
MIL-C-83500
10,1
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Cathode,

MIL-S-83504
14,1
Switches, Dual In-Line Package (DIP), General Specification for
MIL-C-83513
15.1
Connector, Electrical, Rectangular, Microminiature, Polarized Shell,

MIL-C+3446
New Page
Resistor Networks, Fixed, Film and Capacitor-Resistor Networks,

Ceramic Capacitors and Fixed Film Resistors, General Specification for
2-7
_-e_-.
----
..
--
--==a===.a
.-A._...._.
- .. ___
. ____ ____
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-83515
15.1
Connectors, Telecommunication,
for
MIL-R-83516
13.1
Relays, Reed, Dry, General Specification for
MIL-C-83517
15.1
Connectors, Coaxial, Radio Frequency for Coaxial, Strip or Microstrp

Transmission Line, General Specification for
MIL-R-83520
13.1
Relays, Electromechanical, General Purpose, Non-Hermetically Sealed,

Plastic Enclosure (Dust Cover), General Specification for
MIL-G83527
15.1
Connectors, Plug and Receptacle, Electrical, Rectangular Muttiple
Polarized Shell, General Specification
Insert Type, Rack to Panel, Environment Resisting, 15~C Total

Continuous Opemting Temperature, General Specification for
MIL-R-83536
13,1
Relays, Electromagnetic,
for
Established Reliability, General Specification
MIL-C-83723
15.1
Connector, Electrical (Circular Environment Resisting), Receptacles

and Plugs, General Specification for
M!L-R-83725
13.1
Relay, Vacuum, General Specification for
MIL-R-83726
13.1, 13.2,
13.3
MIL-S-83731
14.1
Switch, Toggle, Unsealed and Sealed Toggle, General Specification
MIL-G83733
15.1
Connector, Electrical, Miniature, Rectangular Type, Rack to Panel,
Relays, Hybrid and Solid State, Time Delay, General Specification for
for
Envhnment Resistkg, XKYC Total Continuous Operating

Temperature, General Specifiiion
for
MIL-S-83734
15.3
Sockets, Plug-In Electronic Components, Dual-In-Line (DIPS) and

Single-In-Line Packages (SIPS), General Specification for
MIL-M5028
15.1
Connector, Electrical, Rectangular, Individual Contact Sealing,

Polarized Center JackScrew, General Specification for
STANDARD
MIL-STD-756
Reliability Modeling and Prediction
MIL-STD-683
Test Methods and Procedures for Microelectronics
MIL-STD-975
NASA Standard Electrical, Electronic and Electromechanical (EEE) Parts List
MIL-STD-1547
Electronic Parts, Materials

Technical Requirements for
MIL-STD-1772
Certification Requirements for Hybrid Microcircuit Facilities and Lines
Copies
of specifications
and standards
required
should be obtained from the contracting
and Processes
by Contracbrs
activity or as
for Space and Launch Vehicles,
in connection
with specific
acquisition
directed by the contracting officer. Single

copies are also available (without charge) upon written request to:
functions
Standardization
Oocument Order Desk, 700 Robim AVe , Wilding ~, section D,
Ph(ladelphla, PA 19111-5094, (215) 697-2667
2-8
New Page
,-- -----
MIL-HDBK-217F
NOTICE
MICROCIRCUITS,
5.1
GATE/LOGIC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION
1. Bipolar Devices, Digital and Linear Gate/Logic Arrays
2. MOS Devices, Digital and Linear Gate/Logic Arrays
3. Field Programmable Logic Array (PLA) and
Programmable
Array Logic (PAL)
4, Microprocessors
kp = (cl fi~ + C2fiE)
~QfiL
ailures~l
06
Hours
Digital and Linear Gate/Logic Array Die Complexity Failure Rate - Cl

PLA/PAL
Linear
Digital
No. Gates
c,
No. Transistof$
No. Gates
I c,
T
I
t
101
to
c,
.010
100
to
to
to
to
101
301
1,001
.020
.040
.080
.16
.29
1,000
1,001 to
3,000
3,001 to 10,000
10,001 to 30,000
30,001 to 60,000
NOTE:
Linear
No, Transistor
.010
.020
.040
.060
100
300
1,000
10,000
E=F==7
Up to 8
.060
,14
Up to 16
.12
.28
Up to 32
.24
,56
c,
up to 500
.00085
501 to 1,000
2,001 to 5,000
5,001 to 20,000
.0017
.0034
.0068
For CMOS gate counts above 60,000 use the Vi+ SIC/VHSIC-Like
rocm
Die Complexi~ Failure Rate - Cl
MO.S
c,
.021
.042
PLA/PAL
No. Gates
c,
.010
up to 200
201 to 1,000
1,001 to 5,000
.010
.020
.040
.060
100
300
1,000
10,000
Linear and Digital Gate/Logic Array Die Gomplex~ Failure Rate -Cl
Digital
No. Gates
1 to
1 to
101 to
301 to
1,001 to
.0025
.0050
.010
.020
.040
.080
100
to
101 to
1,000
1,001 to
3,000
3,001 to 10,000
10,001 to 30,000
30,001 to 60,000
1
c,
modei In Section
5.3
All Other Model Parametefs

Refer to
Parameter
1
XT
Section 5.8
C2
section 5,9
7tE, flQ, XL
Section 5.10
Supersedes
- _=...= ------
page
_____ -_ _
_
5-3
of Revision
.
5-3
F
All GAQ =*Q AW -w......-.
baw. - -....-=
--
----
MIL-HDBK-217F
5.2
MEMORIES
MICROCIRCUITS,
DESCRIPTION
1. Read Only Memories (ROM)
2. Programmable
Read Only Memories (PROM)
3. Ultraviolet Eraseable PROMS (UVEfROM)
4. Flash, MNOS and Floating Gate Electrically
Eraseable PROMS (EEPROM).
Includes both
d
floating gate tunnel oxide (FLOTOX) and texture
polysilicon type EEPROMS
5. Static Random Access Memories (SRAM)
R
~vnamic Random Access Memories (DRAM)
_=.
w.
Acyc) XQ XL
kp=(C1XT+C2YCE+
Die Complex~
Failure Rate - Cl
MOs
Memory
Size, B (Bits)
UVEPROM*
EEPROM,
mPROM
DRAM
(MOS &
BiMOS)
.00085
.0017
.0034
.0068
.0013
.0025
.0050
.010
.0078
.016
.031
.062
.00065
up to 16K
16 K< BSWK
64K<BS2%K
256K < B s IM
.0013
.0026
.0052
t
,
Bipolar
SRAM
PROM,
ROM
05 Hours
Failures/l
ROM,
PROM
.0094
.019
.038
.075
SRAM
.0052
.011
.021
.042
A2 Faaor for LCYCCalculation

+
Fatior for Acyc Calculation
Total No. Of
prograrnmin9
Programming
Cycles
\OM Life, C
OV&%PF
Textur8d-
Cycles Over
~EPROM Life, C
Flotoxl
.00070
.0014
200< CS 500
500<cs1K
1K<CS3K
3K<CS7K
7K<CS15K
.0034
.0068
.020
.049
.10
100
100< c s 200
400K < C s 500 K
Pol?
Textured-Poiy
.14
.20
.68
1.3
2.7
3.4
.0097
.30
.30
.30
.30
,30
.30
A!! Other Model

parameter
6.817 X 10-6 (C)
Al=
2.
No underlying
equation
2.3
~E,
5.8
section 5.9
C2
1
Parametem
Refer to
Section
XT
k Cyc
1.
1.1
400K < C s 500K

v
300K c C s 400K
.014
.023
.033
.061
.14
.30
~Qt
Section
XL
(EEPRoMs
5.10
Page 5-5
only)
for Textured-
Poly.
L ~yc = 0
A2
up to 300K
Jp to
15K < C s 20K

20K < C s 30K
30K< C s 100K
100K < C s 200 K
200K < C s 400 K
NO. Of
Total
For a}! other devices
MIL-HDBK-217F
NOTICE 2
MICROCIRCUITS,
5.2
EEPROM
MEMORIES
Cycling Induced Failure Rate - Acyc
ReadWrite
?bO
Cyc =
All Memo~ Devices Except Flotox and
Textured-Poly
EEPROMS
A*B2
~[
Poly EEPROMS
Flotox and Textured
c=
Al
B, + ~
P*
Page 5-4
Page 5-4
Al
page 5-6
page 5-6
A
Apu
B4
A2
Page 5-5
pie
02-0
02
5-6
Sedion 5.1o
5.1o
Sectiorl
ECC
1
ltQ
Error Corredmn Code (ECC)

1. No On-Chip ECC
2. On-Chip t-tammi~
Options:
Code
fi~~~
= 1.0
%CC
~EcC
= .72
ECC
~~~c
=1.0
= .72
= .66
~EGC = =
3. Two-Needs-One
Redutiant Cell APP~ti
IW)TES:
1.
See Referen@ 24 for rnodeliWl off~~p

schemes at the memq system level.
2.
If EEPROM
3.
4.
type is unkmw,
assure
error detectbn and com@bn
Fbtox.
some EEPROM manufadurem

have inco~rated
Error Coff@ion
Code Opt@ns:
on+hip error corred~n
cimuitfY into their EEPROM devwes. This is represetied
by
Other manufadurem
have taken a redundant cell
the on-chip hammin9 code entw.
apprOach whiih imrpo~~
an extra storag9 transistor in Ovefy memo~ Cell. Thk
is represe~ed
by the two-needs~ne
redutia~
cell ent~.
The Al ancf
factom shown in Section 5.2 wem deveb~d

For EEPROMS
based on an assumed
used in systems with
system Iiie of 10,000 operatin9 hours.

s~nifiatily longer or shofier expe~ed Iiietimes the Al and ~ factom should be
~ttiplied by:
\
I
System Lifetime Operating Hours

10,000
5-5
Supersedes
MIL-HDBK-217F
NOTICE 2
5.2
MICROCIRCLJITS,
MEMORIES
II
m
4
iii
+
$!
8
t?
m-
II
t+
Supersedes
5-6
T
:-----
V.-d.
-r.,
MIL-HDBK-217F
NOTICE 2
5.5
MICROCIRCUITS,
HYBRIDS
DESCRIPTION
Hybrid Microcircuits
~=
[z Nc kc] (I + .2zE
Nc
Number of Each Particular
kc
Failure Rate of Each Pafiicular
) YCFnQZL
Fail.reN106
Ho.m
Component
Component
The general procedure for developing an overall hybrid failure rate is to calculate an individual failure rate
for each component type used in the hybrid and then sum them. This summation is then modified to
account for the overall hybrid function (XF), screening level (@, a~ matUritY (XL). The hybfid Packa9e
failure rate is a function of the active component failure modified by the environmental factor (i.e., (1 + .2
~E) ). Onw the component types listed in the folbwing ti3bi8 are considered to contribute S@ItiiCWItly to
the overall failure rate of most h@rids. All other component types (e.g., resistors, inductors, etc.) are
constiered to contribute insignif~ntty to the overall hybrid failure rate, and are assumed to have a failure
rate of zero. This simplificationis valid for most hybrids; however, if the hybrid consists of mostly passive
cornmments then a failure rate should be calculated for these devices. If factorina in other com~onent
.
for these calculatbk.
= Hybrid Case Temperature
aWme ~Q = f, XE1
and
TA
type~,
Determination
Determine kc for These
of kc
Handbook Section
Make These Assumptions
When Determining
xc
Component Types
5
Microcircuits
Discrete Semiconductors
c2=0~zQ=1~
Smion 5.12, ~p
= 1, TJ as Determined from
= O (for WWC).
ZQ = 1, nA = 1, TJ as Determined from Section

6.14, nE = 1.
10
Capacitors
~=lTA
Hybrid Case Temperature,
I?cpl.
NOTE:
tf maximum rated stress for a die is unknown, assume the same as for a discretely package
die of the same type. If the same die has several ratings based on the discrete packaged
type, assume the lowest rating. Power rating used should be based on case temperature
for discrete semiconductors.
Circuit Function Factor -
All Other Hybrid Model Parameters
Circuit Type
~F
Digital
1.0
Video, 10 MHz< f <1 GHz
1.2
Mcrowave,
2.6
f >1 GHz
Linear, f <10 MHz

Power
5.8
21
~~,
~Q,
~E
Refer to Section 5.10
MIL-HDBK-217F
5.6
MICROCIRCUITS,
SAW DEVICES
DESCRIPTION
Surface Acoustic Wave Devices
Environmental Factor - nE
Quality Factor - ZQ
Screening Level
7CQ
10 Temperature Cycles (-55C to

+125C) with end point ektrkd
tests at temperature extremes.
.10
None beyond best commetil
1.0
Environment
GB
~E
.5
2.0
%
Ns
4.0
Nu
6.0
Alc
4.0
IF
5.0
%c
5.0
UF
8.0
RW
8.0
4.0
practices.
.50
SF
MF
5-1o
5.0
ML
42
CL
220
MIL-HDBK-217F
NOTICE 2
MICROCIRCUITS,
5.13
-iimr imim
Power Dissipation,
pD (W)
Area of Chip (in.*)
Source
Si Diode
Vendor Spec. Sheet
14
No. of Pins
TrFiF
%rFFir
EXAMPLES
.33
.35
.6
.6
.42
Circuit Analysis
.0041
.0065
.0025
.0025
.0022
Equ. 2 Above
eJ~(%NV)
30.8
19.4
50.3
50.3
56.3
Equ. 1 Above
TJ (%)
75
72
95
95
89
Equ. 3 Above
2.
Calculate Failure Rates for Each Component:

A)
LMI 06 Die, 13 Transistors (from Vendor Spec. Sheet)
Section 5.1
Because C9 = O;
XT: %WiOn 5.8; XQ, XL Defau~ to 1.0
,
=
B)
(.01)(3.8)(1)(1) = .038 Failure#l 06 Flours
LM741 Die, 23 Transistors. Use Same Procedure as Above.

$
c)
cl XT ~Q
Sificon NPN Transistor,
XL
Rated
(.01)(3.1)(1)(1) = 031 ailured106
Power=
5W (From Vendor
~ec.
oum
Sheet),
VcE~CE()
= .6,
Linear Application
~
%~T~AnR%ZQXE
(.00074) (3.9)(~ .0)(1 .8)(.29) (1)(1)
.0015 Failures/l 06 Hours
SOCtiOn 6.3; nA,
~Qt
~E
oefau~
to
1.0
D) Silicon PNP Transistor, Same as C.

E)
SiliconGeneral
Construction.
P
=
=
=
Supersedes
Purpose Diode (Analog), Voltage Stress = 600/, Metallurgically
k) T
% C Q E
(.0038)(6.3)(.29)(1)(1)(1)
Section 6.1;
ZQJ
XE
Defau~
Bonded
to
1.0
5-23
MII--HDBK-2I
7F
NOTICE 2
5.13
MICROCIRCUITS,
F)
Ceramic Chip Capacitor,

A=
Vottage Stress = 50Y0,

for
the
Hybrid,
1340 pF, 125C Rated Temp.
CASE
P
G)
EXAMPLES
lb ncv
~Q ~E
(.0028)(1.4)(1)(1)
.0039 Failures/l
Section
06 Hours
Thick Film Resistors, per instructions in Section 5.5, the contribution of these devices is
considered insignificant relative to the overall hybrid failure rate and they may be ignored.
[Z NcLc](l
~E
6.0
Section 5.10
fiF
5.8
Section 5.5
ICQ
Section 5.10
XL
Section 5.10
+.27cE)71F7ypL
(1)(.038)+(1)(.031)+
(2) (.0015)+
(2)
+ (2)(.0069) + (2)(.0039) ](1 + .2(6.0))
5-24
10.1 1; XQ, ~E Default to 1.0
1.2 Failures/l
(.0015)
(5,8) (l)(1)
06 Hours
Supersedes
page 5-24 of Rewsion F
MIL-HDBK-217F
6.0
DISCRETE
SEMICONDUCTORS,
INTRODUCTION
The semiconductor
transistor, diode and opto-electronic
device sections present the failure rates on
the basis of device type and construction. An analytical model of the failure rate is also presented for each
The various types of discrete semiconductor devices require different failure rate
device category.
models that vary to some degree. The models apply to single devices unless otherwise noted. For
multiple devices in a single package the hybrid model in Section 5.5 shouid be used.
The applicable MIL specification for transistors, and optoelectronic

(JAN, JANTX, JANTXV) are as defined in MIL-S-19500.
devices is MlL-S-l
9500.
The
quality levels
The temperature
factor (XT) is based On the device Junction temperature
Ju~tiOn
temperature
should be computed based on worse case power (or maximum power dissipation) and the device junction
to case thermal resistance. Determination of jmctbn temperatures is expiairwd in Section 6.14.
Reference 28 should be consulted for further detailed information on the modeis appearing h!this
sect ion.
6-1
MIL-HDBK-217F
NOTICE 2
6.1
DIODES,
LOW
FREQUENCY
DESCRIPTION
Low FrequenCy Diodes: General Purpose Analog, Switching,
Fast Recovery, Power Rectifier, Transient Suppreswr,
Current
Regulator, Voltage Regulator, Voltage Reference
SPECIFICATION
fvllL-s-19500
Temperature Factor - ~
Base Failure Rate - ~

Diode TyDe/Application
,.
-.
(Voltage Ragukto
and Curre
TJ (~)
.0038
General PUIPOW Analog

Switching
Fast Recovery Power Rectifier
.0010
.025
.0030
Power Rectifier/Schoflky
power Diode
Power Rectifier with
High Voltage Stacks
Transient SuppressorNaristor
Current Regulator
Vottage Regulator and Voltage
Referencx? (Avalanche
.0050/
Junction
.0013
.0034
.0020
and Zener)
Terrperatum
(General Purrmse Anak
Pov
Factor
- XT
Switching,
nsient Su
25
1.0
105
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
1.2
1.4
1.6
1.9
2.2
2.6
110
115
120
125
130
135
140
145
150
155
160
165
170
175
?J =
r sor
T ~ (C)
TJ (oC)
~T =
Fast RmvwY,
E
exp
3.0
3.4
3.9
4.4
5.0
5.7
6.4
7.2
8.0
((
.3091
9.0
10
11
12
14
15
16
18
20
21
23
25
28
30
32
-
TJ ~ 273
Juncllon Temperature
%T
TJ
%T
25
1.0
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
1.1
1.2
1.4
XT =
It=
bJ
Vottage Reference,
S!?94!a
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7
exp
((
-1925
~)
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7
4
1
-
TJ + 273
Junction Temperature (C)
1
298
))
I
I
1
298
))
(C)
1
6-2
Supersedes
t
MIL-HDBK-217F
NOTICE 2
7.2
TUBES,
TRAVELING
WAVE
DESCRIPTION
Traveling Wave Tubes
~
Failures/l
+pE
Environment

power ~
10
;Z
1000
3000
5000
8000
10000
15000
20000
30000
>40000
,1
11
11
11
11
11
12
12
12
13
14
15
17
12
12
12
12
12
13
13
13
14
15
16
18
13
13
13
13
14
14
14
15
15
16
18
20
Frequency (GHz)
6
8
10
4
16 19 24 29
16 20 24 29
16 20 24 29
16202429U@
1720242943@
1720253044U
17212631ti
18 22 26 32
19 23 27 33
20 24 29 35
22 26 32 39
24 29 35 43
\
14
18
42
42
42
61
61
61
~~
S
~y
Factor - ZF
~E
Environment
.5
GB
GF
GM
7.0
Ns
3.0
10
NU
r
5.0
Alc
51
56
62
75
83
91
1.5
7.0
IF
6.0
Uc
9.0
UF
k)
11(1.00001)P (1.l)F
Rated Power In Watts (Pew, lf pum,

.001 s P <40,000
SF
Operating Frequency In GHz, .1 S F S 18
MF
11
ML
33
20
Am
If the operating freque~
is a band, or two different
values, use the geometdc mean of the end point

i
06 Hours
frequendes when using table.
c,
.05
500
7-3
Supersedes
-----------*-+-*-
MIL-HDBK-217F
7.3
TUBES,
MAGNETRON
DESCRIPTION
Magnetrons, Pulsed
Lp = kb7r7cc7tE
and Continuous Wave (CW)

06 Hours
Failures/l
P(MW)
.01
.05
.1
.3
:
5
Pulsed
10
24
41
67
34
56
12
15
39
48
~
80
17
19
24
26
54
89
100
130
140
.5
4.6
1.9
6.3
10
2.2
2.8
7.2
9.o
3.1
3.5
4.4
4.9
.5
1
7.6
.1
1.4
10
11
14
16
:
~
Frequency (GHz)
50
30
40
130
110
91
20
110
130
150
170
210
230
140
180
200
150
180
220
2@
180
210
260
290
230
2W
310
280
3=
390
~o
410
@
120
60
70
150
210
240
300
170
230
270
330
80
190
90
200
100
220
260
290
370
280
320
400
300
350
430
330
380
470
520
370
420
530
Wo
410
470
580
~o
440
510
830
700
480
550
~o
760 -
CW Magnetrons (Ratad Power < 5 KW):
Magnetrons:
$-18
19( F)-73 (P)-20
b
=
F=
operating
P=
outout Power in MW,
FrequenCy in GHz,
.15 F <100
.01 SP<5
Environment
LMllization Factor - ZI I
Factor - nE
7
Utilization (Radiate HOUN
Filament HoufS)
%U
.44
0.0
.50
.55
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Environment
~E
GB
1.0
GF
GM
Radiate HourWFilament
Construction
Hours
15
Nu
47
IF
7tc
CW(RatWPower.5~
Coaxial Pulsed
Conventional
7-4
Factor - nc
Construction
Pulsed
1.0
1.0
5.4
4.0
Ns
*IC
0,44 + 0.56R
2.0
I
.61
.66
.72
.78
.83
.89
.94
*UC
Xu =
UF
10
16
12
23
Antfil
80
ML
133
CL
2000
- nvv
ri 7
MIL-HDBK-217F
NOTICE 2
9.1
Resistor Style
Description
Specification
MiL-R-
RESISTORS
~T Tabie
XS Table
Use
Column:
Use
Column:
Rc
11
Resistor, Fixed, Composition (Insulated)
.0017
RCR
39008
Resistor, Fixed, Composition (Insuiated) Est. Rel.
.0017
RL
22684
Resistor, Fixed, Film, Insuiated
.0037
RLR
39017
Resistor, Fixed, Film (Insulated), Est. Rei.
.0037
RN (R, C Of N)
55182
Resistor, Fixed, Film, Est*iishd
.0037
RM
55342
Resistor, Fued, Fiim, Chip, Estabiisti
.0037
RN
10509
Resistor, Fixed Film (High Sttitiity)
.0037
RD
11804
Resistor, Fixed, Film (Power TYW)
.0037
WA, XT= 1
RZ
83401
Resistor Networks, Fixed, Film
,0019
NIA ns = 1
RB
93
Resistor, Fixed, Wkewound (Accurate)
.0024
RB R
39005
Resistor, Fixed, Wirewound
(/@curate) Est. Rel.
.0024
RW
26
Resistor, Fixed, Whwound
(Power TyTw)
.0024
RWR
39007
Resistor, Fiied, Wkewound (Power Type) Est.ReL
.0024
RE
18546
Resistor, I%ed, Whewound (Power TYPS, Ch-k

Mounted)
.0024
RER
39009
Resistor, Freed, Whewound (Power Type, Chassis

Mounted) Est. Rel.
.0024
RTH
23648
Thermistor, (Thermally Sensitive Resistor),

Insuiated
.0019
RT
27208
Resistor, Variabie, Wirewound (Lead Screw

Activated)
.0024
RTR
39015
Resistor, Variable, Wirewound (Lead Screw

Activated), Established Reliability
.0024
RR
12934
Resistor, Variabie, Wwewound, Precision
.0024
RA
19
Resistor, Variable,
Temperature)
.0024
RK
.39002
Resistor, Variable, Wkewound, Semi-Precision
.0024
RP
22
Resistor, Wkewound, Power Type
.0024
RJ
22097
Resistor, Variable, Nonwirewound
.0037
RJR
39035
Resistor, Variable, Nonwirewound Est. Rel.
.0037
RV
94
Resistor, Variabie, Composition
.0037
RQ
39023
Resistor, Variable, NonwireWound, Precision
.00 37
RVC
23285
Resistor, Variable, Nonwirewound
.00 37
Supersedes
Section 9.0-9.17
ReiiabMy
Reiiabiiity
Wkewound (Low Opwating
of Revision
N/A, XT=
1 tlrots=~
9-1
MIL-HDBK-217F
NOTICE
RESISTORS
9.1
-
Power Factor - Xp
,
Temperature Factor - XT
-
.95
,88
20
.001
.068
1.1
1.1
.01
.17
30
1.5
1.2
.13
.44
40
1.8
1.3
.25
.58
50
2.3
1.4
.50
.76
60
2.8
1.5
.75
.89
70
3.4
1.6
1.0
1.0
80
4.0
1.7
2.0
1.3
90
4.8
1.9
3.0
1.5
100
110
5.6
2.0
4.0
1.7
6.6
2.1
5,0
1.9
120
7.6
2.3
10
2.5
130
8.7
2.4
25
3.5
140
2.5
50
4.6
100
6.0
10
np
lower Dissipation (Watts)
Column 2
Column 1
T(C)
= exp
-Ea
8.6 I7x1O
1
.5
-=
150
))
7.1
Kp - (Power Dissipation)3g
oiumn 1: Ea =.2
olumn 2:
Ea -.08
= Resistor Case Temperature. Can be approximate~

as ambient component temperature for low
power dissipation non-power type resistors.
IOTE:
XT vaiues shown shdd
only be used up to
the temperature rating of the device. For

devices with ratings higher than 150C, use
the equation to determine nT
9-2
Supersedes
page Section 90-9.17
-..
of Revision F
MIL-HDBK-217F
NOTICE 2
9.1
Power Stress Factor - nc
Power Stress
Column
Environment
Column
.1
.79
.66
.2
.88
.81
.3
.99
RESISTORS
Factor - n=
Environment
1.0
GB
1,0
GF
4.0
GM
16
Ns
12
Nu
42
.4
1.1
1.2
.5
1.2
1.5
.6
1.4
1.0
AC
18
.7
1.5
2.3
IF
23
.8
1.7
2.8
Uc
31
.9
1,9
3.4
UF
43
RW
63
Column
1: xs s .71e1 1(S)
.50
SF
MF
37
ML
87
CL
1720
Column 2: 7CS= .54e2W(s)
S = Actual Power Dissipation

Rated Power
Quality
ICQ
Established Reliability Styles

s
.03
0.1
0.3
1.0
Non-Established Reliability
Resistors (Most Two-Letter Styles)
3.0
Commercial or Unknown Screening

Level
10
NOTE: Established reliability styles are failure

rate graded (S, R, P, M) based on life testing
defined in the applicable military device
specification. This category usually applies only
to three-letter
Supersedes
styles wilh an R suffix.
Section 9.0-9.17
of Revision
9-3
MIL-HDBK-217F
NOTICE 2
CAPACITORS
10.1
~p=~nTxcnvx~RfiQ~
EFailures/106
fiT
Description
;apacitor
Style
Spec.
MIL-C-
25
Capacitor, Fixed, PaprDielectrk, Direct Current

(Hermeti=l~
Sealed in Metal
Cases)
12889
Capacitor, By-Pass, Radio Interferenm Reductbn, Paper

Dieledrb, AC and DC
(Hermetial~
sealed in Metallic
Table -
~C)iJfS
nC Table -
xv Table -
Use
Use
Use
Colurnm
Column:
Column:
.00037
.00037
.00037
.00051
Cases)
11693
Capacitor, Feed through, Radio

Interference Reduction AC and
DC (Herm@W~ scald in metal
cases), Established and
blonestablished Reliabil~
n, CQR
Capacitor, Fixed Plastic (or

Paper-Pl=tk)
Dielectric
(Hermetial~
sealed in metal,
oaramic or glass cases),
19978
Estabkhd
and NonestWishd
Reliability
18312
x-i
%R
~Ked, Metallizd
Papr Plastb or Plastb
@pacitor,
.00037
.00051
.00051
.00051
(P~r,
Film) Dielectrk% Direct Current
(1-iermetkal& Sealed in Metal
Cases)
39022
Capacitor, Fixed, Metallizd

Paper, Paper-Pi-tic
Fdrn or
Plastic Film Dielectric
55514
Capachor, Fixed, Plastic (or

Metallized Plastic) Diokctrk,
Dire@ Current in Non-Metal Cases
83421
Capacitor, Fixed Supermetdlud

Plastic Film Dkdectrii (DC, AC or
DC and AC) Hermetical& Sealed
in Metal Cases, Establish

Reliability
-i
.00076
Capacitom, Fixed, Mka Dielectric
.00076
Capacitor, Fixed, Mica Dielectric,

Established Reliabilhy
39001
Capacitor, Fixed, Mica Dielectric,

Button Style
.00076
10950
C8
Capacitor, Fixed, Glass Dieiectr ic
.00076
11272
CY
.00076
23269
CYR
CM
Capacitor, Fixed, Glass

Dielectric, Established Reliability
10-1
Supersedes
I
Ocv
Section
.
10.1 -10.20
m
of Revision
F
ml
Iuw>
16
eal
>1
MIL-HDBK-217F
NOTICE 2
CAPACITORS
10.1
Capacitor
Style
Spec.
MIL-C-
CK
11015
Description
Capacitor, Fixed, Ceramic
Dielectric (General Purpose)
CKR
39014
Capacitor, Fixed, Ceramic

Dielectrk (General Purpose),
Establish
Reliabiltiy
cC, CCR
20
CapaCitor, Fixed, Ceramic

Dielectti (Tem~rature
Compensating), Establish
Relitil~
Nonestablishd
CSR
CL
nc Table -
Xv Table -
Use
Column:
use
Column:
.00099
Use
Column:
1
.00099
.00099
See
Capacitor, Chip, Muttipk Layer,

FMed, Ceramk Dieled~c,
Established Reiiabil~
39003
Capacfior, Fixed, Electro~ic

(Solid Electrolyte), Tantalum,
Established Reliability
55365
Capacitor, Fixed, Electro~ic

(Tantalum), Chip, Established
Reliability
3965
Capackor, Fued, Electro~ic

(Nonsoiti Electro~e), Tantalum
.0020
.00040
%R
Table
.00005
%R
Table
1
.00040
.00040
.000 12
.000 12
.0079
.0060
.0000072
.0060
.00040
39006
Capackor, Fixed, Ek@ro~k

(Nonmld ElectIo~e), Tantalu m,
Establish
Reliabil~
83500
Capacfior, Fixed, Electro~ic

(Nonsolid Ele@o~e), Tantal urn
39018
Capacitor, Fixed, Ebctro~ic

(Aluminum Oxide), Established
Reliabil~ and Nonestablish*
Reliability
L
CE
62
Cv
81
L
Pc
14409
Capacitor, Fixed Electrolytic (DC,

Aluminum, Dry Ele@o~e,
Polarized)
Capacitor, Variable, Ceramic
Dieied*
(Trimmer)
Capacitor, Variable (Piston Type,
Tubular Trimmer)
Ak Die Iectric
CT
92
Capactior, Vati*le,
(Trimmer)
(%
23183
Capacitor, Fixed or Variable,

Vacuum Dielectric
See
Cathode
cU, CUR
%R
and
55681
n~ Table -
Supersedes
10-2
I
.-
Section
10.1 -10.20
. .
of Revlslon F
MIL-t-iDBK-217F
NOTICE 2
10.1
Temperature
Capacitance Factor
Factor - XT
CAPACITORS
- ~,
(
T(%)
Column
20
%T
Capacitance,
c(~F)
Column 2
.79
.91
Column 1
Column 2
.000001
.29
.04
30
1.1
1.3
.00001
.35
.07
40
1.3
1.9
.0001
.44
.12
50
1.6
2.9
.001
.54
.20
60
1.8
4.2
.01
.66
.35
70
2.2
6.0
.05
.76
.50
80
2.5
8.4
.1
.81
.59
90
2.8
11
.5
.94
.85
100
3.2
15
1.0
1.0
110
3.7
21
1.1
1.3
120
4.1
27
1.2
1.6
130
4.6
35
18
1.3
1.9
140
5.1
44
40
1.4
2.3
150
5.6
56
200
1.6
3.4
1000
1.9
4.9
3000
2.1
6.3
10000
2.3
8.3
30000
2.5
11
60000
2.7
13
-Ea
= W ( 8.617
x10-5
( T + 273
))
Column 1: Ea = .15
Column 2: Ea = .35
T = Capacitor Atiient
Temperature
120000
NOTE: 1. fiT values shown should only ~ used

up to the temperature rating of the
Column 1: ~
= Cog
Column 2: ~
= C-23
device.
2,
For devices with ratings higher than

150C, use the equation to determine
XT (for a~li~tions
ahve 150C).
Supersedes
I
Section
1-1
10.1 -10.20
.
of Revision
r
10-3
F
Is-1
t3-
MIL-I+DBK-217F
NOTICE 2
10.1
CAPACITORS
Voltage Stress Fac!or - x,
Voltage Stress
Column
Column 2
Column 3
Column 4
Column 5
0.1
1.0
1.0
1.0
1.0
1,0
0,2
1.0
1.0
1.0
1.0
1.1
0.3
1.0
1.0
1.1
1.0
1.2
0.4
1.1
1.0
1.3
1.0
1,5
0.5
1.4
1.2
1.6
1.0
2.0
0.6
2.0
2.0
2.0
2.0
2.7
0.7
3.2
5.7
2.6
15
3.7
0.8
5.2
19
3.4
130
5.1
0.9
8.6
59
4.4
990
6.8
166
5.6
14
Column 1: 7CV=
Column 2:
~ 5+1
.6
()
s
xv =
&
,6
5900
Column 4:
Zv=
Column 5:
%V =
10+1
()
Column 3: xv=
3+1
s=
()
F
~
.6
17+1
3+1
()
9.0
() .5
Operating Voltage
Rated Voltage
Note: Operating voltage is the sum of applied DC voltage and peak AC voltage.
Series Resistance Factor

(Tantalum CSR Style CapacitorS Only) - XSR
Circuit Resistance, CR (ohms/vott)
>0.8
%R
.66
>0.6 to 0.8
1.0
>0.4 to 0.6
1,3
>0.2 to 0.4
2.0
>0.1 to 0.2
2.7
3.3
CR .
Eff. Res. Between

Voltage
10-4
<
Cap. and Pwr, Su~~

Applied to Capacitor
Supersedes
Section 10.1 - 10.20 of Revision F
MIL-HDBK-217F
NOTICE 2
10.1
Quality Factor - XO
Environment
Quality
Established
o
7rQ
Reliability
CAPACITORS
Factor - KE
Environment
GB
Styles
fiE
1.0
.001
GF
10
.01
GM
20
S,B
.03
.1
Ns
7.0
Nu
15
AC
12
IF
15
.3
1.0
Uc
25
1.5
UF
30
RW
40
Non-Established
Reliability
Capacitors (Most Two-Letter
Commercial
Level
or Unknown
Styles)
SF
3.0
Screening
10.
.50
MF
20
ML
50
CL
570
NOTE: ~t~tis~reltiil~~l~amfa~re
rate graded (D, C, S, etc.) based on life testing
defined in the applicable military device
specification. This category usually applies only
to three-letter styles with an R suffix.
Supersedes
Section
10.1 -10.20
of Revision
10-5
MIL-HDBK-217F
NOTICE 2
10.2
CAPACITORS,
EXAMPLE
Example
VDC rated capacitor
type CQ09A1KE153K3
is being used in a fixed ground
environment, 50C component ambient temperature, and 200 VDC applied with 50 Vrms @
60 Hz. The capacitor is being procured in full accordance with the applicable specification.
Given:
A 400
The letters CQW in the type designation indicate that the specification is MlL-C-l 9978 and that it is a NonEstablished Reliability quality level. The E in the designation corresponds to a 400 volt DC rating. The
I 53 in the designation expresses the capacitance in picofarads. The first two digits are significant and
the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000
picofarads. (NOTE: Pioo = 10-12, ~ = 10-6)
Based orI the given information the following modei factors are cfetetmined from the tables shown in
Section 10.1.
lb
.00051
XT
1.6
Use Table Equation (Note 15,000 pF = .015 PF)
7CV
s=
2.9
s=
= ~ ~~c~v
=
10-6
%RXQ
.049 Failures/l
DC Volts
Applied + fi (AC Volts Applied~

DC Rated Voltage
200 + dz (50~ . .m
400
= (.00051)(I.6)(.69)
(2.9) (1)(3 .O)(1O)
06 Hours
Supersedes
Section
10.1 - 10.20 of Revision F
MIL-HDBK-217F
NOTICE 2
INDUCTIVE
11.1
Low Power Pulse

Intermediate Frequewy
TP
)LP= ~~xTxQz~
Fai~Ures/l

Lb
Audio (15 -2oK Hz)
06 Hours
(F/106 hrs.)
+
lcQ
QualitY
.0054
MIL-SPEc
.014
Lower
1
3
Environment
Fader
- ZE
fiE
Environment
.049
High Power, High

Power Pulse (Peak
Power z 300W, Avg.
Pwr.25W)
1.0
GB
6.0
GF
.13
IOM Hz)
RF (1OK.
12
GM
Tempemtum Factor -XT

I
5.0
Ns
16
Nu
!:
1 .Z
1.4
1.6
1.8
1.9
2.2
2,4
2.6
2.8
-.
3.1
.-
Ad
4.
I
1
24
Am,
t-Ivv
ML
cL
*A
.3U
13
34
610
4.6
190
-.11
exp ~W-29Et
8.617x
I0
THS = Hot Spot Temperature

11.3. This prediction
I_
,
1
)){
(C), See Section
model assumes that the
insulation rated temperature E not exceeded for

more than 50,0of the time.
Supersedes
9.0
UF
4.3
180
XT =
7.0
%c
3.3
3.5
3.8
8.0
IF
I
I
6.0
Alc
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
.022
Low Power Pulse

(Peak Pwr. c 300W,
Avg. Pwr. < 5W)
(IF), RF and Discriminator
Quality Factor - ~
Flyback (C 20 VOM)
and High Power Pulse
Audio, Power
TF
Transformer
TRANSFORMERS
DESCRIPTION
sTYLE
SPECIFICATION
MIL-T-27
MIL-T-21038
MIL-T-55631
DEVICES,
11-1
MIL-HDBK-217F
NOTICE 2
INDUCTIVE
11.1
DEVICES,
TRANSFORMERS
Transformer
Characterlstlc
Determlnatlon
Note
MIL-T-27
TF
Example
R
AIL-T-27
Designation
01
Famtiy
Irlsul&dkm
chS
576
I
Grade
GA
~~
Syrflbd
Family Type Codes Are:

Power Transformer
37 though 41
and Filter: 01 through 09,
Audio Transformer:
10 through 21, 50 through 53
Pulse Transformer:
22 through 36,54
MI L-T-21038
TP
Example
Designation
MIL-T-21we
xl 1OoBcool
h.suticxl
Gr*
Cbs
MlL-T-5563I.
The Transformers are Designated
with the folbwing Types, Grades and Classes.
Intermediate Frequency Transformer
Radio Frequency Transformer
Discriminator Transformer
Type 1
Type II
Type Ill
Grade 1
Grade 2
Grade 3
Class O
Class A
Class B
Class C
For Use When Immersionand

Moisture Resistance Tests are
Required
For Use When Moisture Resistance
Test is Required
For Use in Sealed Assemblies
85C Maximum Operating
Temperature
I05C Maximum Operating
Temperature
125C Maximum Operating
Temperature
> 125C Maximum Operating
Temperature
The class denotes the maximum operating

temperature (temperature rise plus maximum
ambient temperature)
Supersedes
11-2
-
z..__.
.
_
=.____
.
-=---.+--_-____>_
page
11-2 of Revision F
._
.
e-
~.
__. __
..
_
MIL-HDBK-217F
NOTICE 2
11.2
COILS
Quality Factor - ~

+
~
Inductor Type
DEVICES,
DESCRIPTION
Fixed and Variable, RF
Fixed and Variable, RF, Chip
Molded, RF, Est. Rel.
STYLE
SPECIFICATION
MIL-C-15305
MIL-C-83446
MIL-C-3901O
INDUCTIVE
Quality
F/lo6 Ms.
IIQ
Fixed Inductor or Choke
.000030
Variable Inductor
.000050
Temperature
Factor - XT
TH@)
.03
.10
.30
1.0
MIL-SPEC
1.0
Lower
3.0
XT
20
.93
30
1.1
40
1.2
50
1.4
60
1,6
70
1.8
GB
1.0
80
1.9
GF
6.0
90
2.2
GM
100
2.4
110
2.6
120
2.8
130
3.1
140
3.3
150
3.5
160
3.8
170
4.1
*UF
180
4.3
*RW
190
4.6
sF
XT = e)(p
-.11
8.617x
10
-5
Environment Factor - XE
Environment
Ns
Nu
*IC
IF
*UC
1
1
TH~ + 273 -=
~E
12
5.0
16
6.0
8.0
7.0
9.0
24
.50
MF
13
ML
34
CL
610
))
HS = Hot Spot Temperature (C),

See Section 11.3
Supersedes
11-3
F
L1
MIL-HDBK-217F
NOTICE 2
INDUCTIVE
11.3
DEVICES,
DETERMINATION
OF
HOT
SPOT
TEMPERATURE
l-lot Spot temperature can be estimated as follows:
THS=TA+
1.1 (Am
where:
-$+s
Hot Spot Temperature
TA
Inductive
AT
Average Temperature
(C)
Device Ambient Operating
Temperature
(C)
Rise Above Ambient (C)
Rise Test Method paragraph in the device base

AT can either be determined by the appropriate Te~erature
specification (e.g., paragraph 4.8.12 for MI L-T-27E), or by approximation using one of the procedures
described below. For space environments a dedicated thermal anatysis should be performed.
AT&p mximation (Non-spaoe Environments)
Information
.
- Known
1.
MIL-C-3901 O Slash Sheet Number

MIL-C-39010/l
C-3C, 5C, 7C, 9A, lOA, 13, 14
AT Armoximation
AT= 15C
AT= 35C
MIL-C-39010/4C, 6C, 8A, 11, 12
AT= 125 WL/A
2.
Power Loss
Case Radiating Surface Area
3.
Power Loss
Transformer Weight
AT= 11.5 wL/(wt.)6766
4.
Input Power
Transformer Weight
AT= 2.1 W~(Wta)06766
(Assumes
A=
800/0 Efficiency)
Power Loss (W)

Radiating Surface Area of Case (in2). See below for MIL-T-27 Case Areas
Wt.
Transformer
w,
= Input Power
Weight
(lbS.)
(W)
NOTE: Methods are listed in prefemd order (i.e., most to least accurate). MIL~-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with
surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating
swface area.
MIL-T-27 Case Radiati nq Areas (Excludes Mounting Surface)

Case
AF
AG
Al-1
AJ
EB
EA
Case
Area (in2)
Case
4
7
11
GB
GA
H5
33
43
42
LB
LA
MB
Area (in2)
18
HA
53
MA
21
23
JB
JA
58
71
NB
NA
FB
25
KB
72
OA
FA
31
KA
84
17-4
Supersedes
#,.
Area @2)
82
98
98
115
117
139
146
pages 11-4 and 11-5 of Rev[sion F
MIL-HDBK-217F
NOTICE 2
12.1
ROTATING
DEVICES,
MOTORS
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to
pcdyphase, capacitor start and run and shaded pole motors. hs application may be extended to other types of fractional
horsepower motors utilizing rolling element grease packed bearings. The model is dictated by two failure modes, bearing
failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor
applications. The mode! is based on References 4 and 37, which contain a more comprehensive treatment of motor life
The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds
prediction methods.
exceed 24,000rpm or motor loads include motor speed slip of greater than 25 percent.
The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The
over time wrid
T. This time period is
failure rate model in this section is an average failure rate for the motor op-ting
either the system design life cycle (LC) or the time period the motor must last between complete refurbishment (or
replacement).
The model assumes that motors are replaced upon faifure and that an effective constan! failure rate is
achieved after a given time due to the fact that the effective ~ime zero- of replaced motors becomes random after a
, can be treated as a constant failure rate and
significant portion of the population is replaced. The average faikuO rate,
added to other part failure rates from this Handbook.
x,
Lz
l.p=
[
A(xB
BaW
x 106 Failures/l 08 I-iours

1
Bearing & Winding Characteristic Life - c%Rand aw.~
A (c)
E
30
40
50
60
55000
35000
2.534-
TA2~:73
10 (
(Hr.)
6.49+06
3.2e+06
1.W+06
8.9e+05
5.oe+05
2.9e+05
1.8e+05
3600
13000
39000
78000
aB
(Hr.)
aB (Hr.)
70
80
90
100
110
120
130
140
22000
14000
9100
6100
4200
2900
2100
1500
1
4500
10 (
(Hr.)
1.1Q+05
7.09+04
4*6e+04
3.le+04
2.19+04
1.5e+04
1.09+04
7.5e+03
1
-1
+
)
[
2357
,0 [ TA + 273
TA (=)
20-~
+300
1.83]
%/
aB
Weibull Characteristic Life for the Motor Bearing

Weibull Characteristic Life for the Motor Windings
w
TA
Ambient Temperature
NOTE:
See page 12-3 for method to cakulate aB and ~
Supersedes
.__
__
______ __
(C)
when temperature is not @nstant.
12-1

-.____
..-_
MIL-HDBK-217F
NOTICE 2
ROTATING
12.1
DEVICES,
MOTORS
L --
and L c Determination
..
1
A and B Determinatbn
Motor Type
k,
aw
aB
1.1
1.9
Electrical (General)
Lcw&
or Q
0-.10
.13
.11 -.20
.15
.21 -.30
.23
.31 -.40
.31
.41 -.50
.41
.51 -.60
.51
55000 Hrs.
.61 -.70
.61
2,9e + 5 Hrs.
,71-.80
.68
.81 -.90
.76
.29
.48
Sensor
Servo
2.4
1.7
Stepper
11
5.4
Example Calculathn
A general purpose elecltial motor is operati~ at
50C in a system with a 10 year desgn life (876W
hours) expedancy,
87600
~fS.
55000
I+rs.
87600
I-trs.
for
.23
(
1.0
>1.0
2.9e + 5 Hrs. =
1.0
1 .e
L& .
aB
f.rg=
aw
.3
LC is the system design Me cycle (in hours), or

the motor preventive rnaintename intewal, if
motom will be periodidly
1.6
replaced or
refutished.
Determine kl and ~ separately

LC am
LC ratios.
based on the respedive
UB
aw
)
.3
)
1.9
1.1
%=
[*+
~9.9
ILL
.23
(1. V(2.9e
+ 5)
x0
10.3 Failures/l 06 Hours
Supersedes
MIL-1-iDBK-217F
NOTICE 2
12.1
Calculation
ROTATING
DEVICES,
MOTORS
for Cycled Temperature
The following equation can be used to calculate a weighted characteristic life for both bearings and windings
(e.g., for bearings substitute aB for all as in equation).

h1+h2+h3+------hm
a=
hl
hz
+
al
+
a2
h3
+-------
a3
h~
a
where:
a
either ~
h,
Time at le~erature
h*
Time to Cycle From Temperature
h3
Time at Temperature
T3
hm
mme at Temperature
Tm
al
Bearing (or Winding)
Liie at T1
Bearing (or Whaling)
Life at T2
or aw
T1
T, to T3
T3 + T,
T, + T3
T~=2$T4=2
T3
T2
TI
.
h4
-f
hl
II
1
h3
hz
I
Hours
Thermal
Supersedes
page 12-3 of Notice
(h)
Cycle
12-3
MIL-HDBK-217F
NOTICE 2
12.2
ROTATING
DEVICES,
SYNCHROS
AND
RESOLVERS
DESCRIPTION
Rotating Synchros and Resolvers
Failures/l
kp = &S~NXE
NOT E:
06 Hours
Synchros and resolvers are predomiwtely

used in service requiting only slow and infrequent motion.
Mechan~al wearoti problems are infrequeti
so that the electrical failure mode dominates, and no
mechankal mode failure rate is required in the model above.
Number of Brushes Factor - ~
%N
Number of Brushes
~
40
.0083
.0088
.0095
45
50
55
60
65
.010
.011
.013
.014
.016
70
75
80
.019
.022
.027
30
35
%
TF
85
90
95
100
105
110
115
120
125
130
~
+ Atiieti
2.5
3.2
Environment
(z)
2.0
IF
*UC
UF
Size 8 or
smaller
Size 10-16
Size 18 or
Larger
Synchro
1.5
Resolver
2.25
1.5
DEVICE
TYPE
RW
GF
AC
Size Factor - x~
r
fiE
1.0
Tempenture
Factor - ZE
GB
N~
If Frame Temperature is Unknown Assume

TF=40C
Environment
.oo535expf-)8
Frame Ternpwatum
1.4
52
.032
.041
.052
.069
.094
.13
.19
.29
.45
.74
,1.3
12
7.0
18
4.0
6.0
16
25
26
.50
SF
MF
14
ML
36
CL
680
Supersedes
12-4
//-
.>.
\NaaA\
page 12-4 of Notice 1
MIL-HDBK-217F
NOTICE 2
12.3
ROTATING
DEVICES,
ELAPSED
TIME
METERS
DESCRIPTION
Elapsed Time Meters
kp =&p~Fai
Hours
Environment Factor - xc

Type
lures/106
Lb
A.C.
20
Invefier Driven
30
Commutator D.C.
80
Environment
GB
1.0
GF
2.0
%
Ns
Nu
Temperature Stress Factor - XT

Operating T (C)/Rated T (~)
XT
Supersedes
18
IF
8.0
.5
UF
.6
.6
RW
.8
.8
1.0
1.0
7.0
5.0
.5
12
*IC
Uc
o to
~E
16
25
26
.50
SF
MF
14
ML
38
CL
N/A
12-5
MIL-HDBK-217F
NOTICE 2
RELAYS,
13.1
DESCRIPTION
Mechanical Relay
SPECIFICATION
M\L-R-5757
MIL-R-6106
MIL-R-13718
MIL-R-19646
MIL-R-19523
MIL-R-390~6
MIL-R-83516
MIL-R-83520
ML-R-83536
MIL-R-83725
MIL-R-83726 (Except Class C, Solti State Type)
)bP=
T. (%)
n
&Lncxc&xQn
.0067
.0075
.0064
.0094
.010
.012
.013
.014
.016
.017
75
.019
.021
80
65
90
95
100
105
110
115
120
125
-.0059 exp
(
2 %
-.0059 exp
~A
8.617
X 10-5
~bant
.U3
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77
~
1.
y--
~-zm1)
1
298
,I
Contad Fom Factor - nc
/
r
%Yc
10
0.1
CYC
Rate
100
>1OOO
10-1000
<10
cn
2.00
3PDT
4PDT
6PDT
(C@es per Hour)
I .au
1.75
S2
~
~.exp
(MIL-SPEC)
1.00
s?S1
DPST
sPOT
3PST
4PST
DPDT
()
21.0
<1.0
(Applies to Active Concluding Conta~s)

c
mntact Form
3.
c@e Rate
(@cbS
per Hour)
Cycle
S2
-j
2,72
9.49
54.6
CydiMI Fader- ~yc
Tempmture VC)
1.28
1.76
2.72
4.77
9.49
21.4
combinatmnand use the worse casO (largest XL).
10-5 [ T + 273
()
For single dev-s wtkh switchtwo different load typs,

evaluate q-for each possible str-s bad tyPS
.1
-.17
8.617
l=--
-.19
R*06
.-
:6
.005=
.0066
.0073
.0081
.0089
.0098
.011
.012
.013
.014
.015
.017
.018
.019
iii
.022
.024
.026
.027
.029
.031
:&9
30
35
40
45
50
55
60
65
70
a.
Ob Hours
Failures/l
Load Stress Factor - XL

~- -I T.-A

Rat# Tempentt I~a
1
.
I
125$
I
0s%
25
MECHANICAL
A
I
Cycles per Hour

10
1.0
2.50
NOTE-
3,00
425
550
800
basic design hmttations of the relay are not valld Deslg

specdicatlons should be consulted prior to evaluation of
-H
Values of nCYC for cycling rates beyond the
n
I
CYC
13-1
Supersedes
nnll
page
-U.l1
13-1
of Revision
WI
F
ITHSISIUI
. rlxuu.
uulllwalLlwIl
10 IISZUIOUWUJ,
w-l!W1-.
-y-----------.---
MIL-HDBK-217F
NOTICE 2
RELAYS,
13.1
MECHANICAL
Application and Constfuction Factor - fiF
1
Quality Factor - n,
Contact
7tQ
Quality
Rating
~
.10
.45
.60
1.0
1.5
MIL-SPEC, Non-Est. Rel.
1.5
@mmercial
2.9
(Long)
Armature
Mercury
General
Construction
Type
Dry Reed
lrrent
3Wmv
Idma)
.30
Application
Type
D~ Circuit
Pum09e
b
Sensitive
(0-lCN)mw)
Polarized
Wetted
Magnetic Latching
Balanc6d Armature
Solenoid
Armature (LoW)
Balanced Armature
Solenoid
Armature (Long and
short)
Mercury Wetted
Magnetic Latching
Meter Movement
Balancd Armature
Armature (ShOti)
1.0
GF
2.0
Electronic
Ilrne Dew,
~
*-Thermal
8.0
Ns
.atch ing,
Magnetic
27
Nu
7.0
AC
5-20 Amp
9.0
IF
High Voltage
~
Power
11
%c
12
UF
46
RW
.50
SF
25-600
25
MF
25
15
13-2
GB
c,
100
fiE
Environment
ML
2
6
100
10
10
Environment Factor - xcL

\
66
Contractors
(High
Current)
w Reed
Wetted
Balan@ armature
Vacuum (Glass)
Vacuum (Ceramk)
Armature (Longand
Mikwy
10
5
5
20
5
short)
Mercury Wetted
Magnetic Latching
Mechan~1 Latching
BalaArmature
Solenoid
Armature (Short)
Mechanlcd Latching
Baian@d Armature
Solenoid
:
3
2
2
7
12
10
5
N/A
Supersedes
page
13-2
of Revision
7F
fvllL-HDBK-21
NOTICE
13.2
RELAYS,
SOLiD
STATE
AND
TIME DELAY
DESCRIPTION
Relay, Solid State
Relay, Time Delay, Hybrid and Solid State
SPECIFICATION
MIL-R-28750
MIL-R-83726
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum
the failure rates for the individual components which make up the relay. The indvidual component failure rates
can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or
from the Pafls Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following default model can be
used:
~
= ~z@E
Failures/106 liours

1
Relay Type
Lb
Environment
fiE
Solid State
.029
Solid State Time Delay
.029
Hybrid
.029
GB
1.0
GF
3.0
GM
Ns
N
Alc
Quality Factor - z~
Quality
MIL-SPEC
Commemial
7CQ
1.0
1.9
page 13-3 of RwIsm
6.0
17
12
IF
19
%c
21
UF
32
RW
23
.40
SF
MF
12
ML
33
cL
Supwsedw
12
590
13-3
MIL-HDBK-217F
NOTICE 2
SWITCHES
14.~

1
Spec.
~ (F/106 tirs.)
MIL-SDescription
Centrifugal
Dual-In-line Package
Limit
Liquid Level
Microwave
(waveguide)
pressure
pushbutton
Iced
locker
iotafy
Sensitive
Thermal
Thurnbwhed
Toggle
3.4
.00012
4.3
2.3
1.7
N/A
83504
8805
N/A
II
8932
9395
1211
8805
I
22885
24317
55433
3950
22885
3786
13623
15291
15743
22604
22710
45885
82359
8805
13484
22614
12285
24286
22710
3950
5594
8805
8834
9419
13735
.
81551
83731
Stress
s
0.05
2,8
.10
.0010
.023
.11
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1,06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77
1.28
1.76
2,72
4.77
9.49
21.4
Lamp
1.06
1.28
2.72
9,49
54.6
Operating Load Current

Rated Resistive Load Current
s=
XL
exp (S/.8)2
for Resistive Load
fiL
exp (s94)2
for Inductive Load
fiL
exp (S/.2)2
for tirnp
Load
NOTE: When the switch is rated by indutiive load,

then use resistive nL.
.49
Conta@ Configuration Factor* - Zc

# of Contactst
NC
Contact Form
1
SPST
2
DPST
2
sPOT
3
3PST
4
4PST
4
DPDT
6
3PDT
8
4PDT
12
6PDT
.031
.18
.10
Load Stress Factor - XL

Load Type
Inductive
Resistive
1.02
1.00
1.06
1.02
xc
1.0
1.3
1.3
1.4
1.6
1.6
1.8
2.0
2.3
Applies to toggle and pushbutton switches only,

all others use fic = ~.
74-1
Supersedes
page
14-1
through
14-4
of Revision
MIL-HDBK-217F
NOTICE 2
SWITCHES
14.1
Environment
Quality Factor - Kn
.
Quality
Lower
~E
Environment
~Q
GB
1.0
GF
3.0
18
GM
8.0
NS
29
Nu
10
*C
18
IF
13
Uc
22
UF
46
RW
.50
SF
14-2
MIL-SPEC
Factor - n~
Supersedes
MF
25
ML
67
CL
1200
page 14-1 through
14-4
of Revision
MIL-HDBK-217F
NOTICE 2
14.2
DESCRIPTION
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
SPECIFICATION
MIL-C-13516
MIL-C-55629
MIL-C-83383
MIL-C-39019
W-C-375
kp = &cXuZQnE
SWITCHES,
CIRCUIT
BREAKERS
Manual and Automatic

Magnetic, Unsealed, Trip-Free
Remote Control, Thermal, Trip-Free
Magnetic, Low Power, Sealed, Trip-Free Service
Molded Case, Branch Circuit and Sewice
Failures/l
06 Hours
Base Failure Rate - k
oualitv Factor - ~n
Description
Quality
%3
7CQ
Magnetic
.34
MIL-SPEC
1.0
Thermal
.34
Lower
8.4
Thermal-Magnetic
.34
Environment Factor - xc
IE
Configuration Factor - m
Configuration
nvironment
GB
1.0
GF
2.0
SPST
1.0
GM
DPST
2.0
Ns
3PST
3.0
Nu
4PST
4.0
AC
7.0
IF
9.0
Use Factor - z
Use
Not Used as a Power

On/Off Switch
1.0
Aiso Used as a Power

On/Off Switch
2.5
Supersedes
15
8.0
27
%c
11
UF
12
RW
46
SF
.50
MF
25
ML
66
CL
NtA
14-3
MIL-HDBK-217F
NOTICE 2
CONNECTORS,
15.1
LP = kbnTnKnQnEFailures/lo6
GENERAL
ours
APPLICATION NOTE: The failure rate model is for a mated pair of conneCtom. It is sometimes desirable to
assign half of the overall mated pair connedor (i.e., single corm-or)
failure rate to the Ime replaceable unit and
An example of when this would be beneficial is for input to maintainability
half to the chassis (or backplane).
prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This
accounti~ procedure could be signiftint if repair times for the two halves of the connector are substantially
different. For a single connector divide ~ by tWO.
Temperature Factor - XT
~ification
MIL-C26482
115
27599
i500
29600
1840
83723
)999
Description
;ircular/Cylititil
-$) (v
.0010
1511
ard Edge (PCB)*
exagonal
21097
55302
.040
24055
24056
.15
24308
28731
28748
83515
.021
21617
24308
28748
28804
81659
83513
8352?
83733
85028
.046
ack and Panel
Rectangular
3F Coaxial
S607
36X3
S650
3655
15370
25516
26637
39012
55235
83517
.91
20
.00041
30
1.1
40
1.3
50
1.5
60
1.8
70
2.0
80
2.3
90
2.7
100
3.0
110
3.4
120
3.7
130
4.1
140
4.6
150
5.0
160
5.5
170
6.0
180
6.5
190
7.0
200
7.5
210
8.1
220
8.6
230
9.2
9.8
240
I
250
XT
Telephone
55074
.0075
Power
22992
.0070
Trlaxial
49142
.0036
sexp
10.
-.14
18.617
X 10-5
To
1
+
273
. 1
298
)1
To = Connector Ambient + AT
AT = Connector Insert Temperature
(see Table)
Rise
Pr~nted Circuit Board Connector

15-1
Supersedes
a..
. .
. .
..
____
. a ___
page
15-1
_______ . .
through
15-5
of Revision
F
.
......
MIL-HDBK-217F
NOTICE 2
Mating/Unmating
Default Insert Temperature Rise

lAT
C)
, Determination
Contact Gauge
Amperes
L
~er Contact
2
3
4
5
6
7
8
9
10
15
20
25
30
35
40
AT
AT
AT
AT
AT
AT
AT
AT
AT
=
=
=
=
=
=
=
=
=
30
10
22
37
56
79
22
4
8
13
19
27
36
46
57
70
20
2
5
8
13
18
23
30
37
45
96
32 Gauge
30 Gauge
28 Gauge
24 Gauge
22 Gauge
20 Gauge
18 Gauge
16 Gauge
0.100 (i) 85
12
0
1
1
2
3
4
5
6
7
15
26
39
54
72
92
1.0
> .05to .5
1.5
>.5t05
2.0
>5t050
3.0
> 50
One cycle includes both connect and
disconnect.
Quality Factor - XQ
Quality
Contacts
MIL-SPEC
Contacts
Lower
Contacts
Contacts
Contacts
Environment
Contacts
~E
Contacts
GF
1.0
12 Gauge Contacts
GM
8.0
Ns
5.0
Amperes per Contact
Contacts
Rise
Nu
4
RF Coaxial Connectors
(High Power Applications)
o to .05
1.0
Insert Temperature
RF Coaxial Connectors
~K
GB
AT =
=
Mating/Unmating Cycles*
(per 1000 hours)
16
1
2
4
5
8
10
13
16
19
41
70
106
3.256(i)
85
2.856(i)
85
2.286(i) 85
1.345(i)l 85
0.989(i)
85
0.640(i) 85
0.429(i)
85
0.274(i)
85
Factor - nK
AT = 5C
Alc
IF
Uc
AT= 50C
13
3.0
5.0
8.0
UF
12
RW
19
.50
SF
15-2
Supersedes
MF
10
ML
27
c,
490
page 15-2 through
15-5 of Revision
MIL-HDBK-217F
NOTICE 2
15.2
Lp = ++CP7CQ7CEFailures/l
Dual-In-Line Package
Active Pins Factor - np
Spec.
httlL-S
Lb
83734
.00064
83734
.00064
Chip Camier
38533
.00064
NIA
.00064
Relay
12883
.037
Transistor
12883
.0051
Electron Tube, CRT
12883
.011
.3
MIL-SPEC.
1.0
Environment Factor - ~E
fiE
Environment
GB
1.0
GF
3.0
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
13.5
140
1.5
1.7
H
2.1
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
4.1
4.5
5.0
5.5
5.9
6.4
;$
155
160
165
170
175
180
Ns
6.9
7.4
7.9
8.4
8.9
9.4
9.9
10
11
12
12
13
13
14
14
15
16
16
17
18
18
19
20
20
21
22
6.0
18
Nu
AC
8.0
11
*UC
Number of Active Pins
An active contact is the conductive element

which mates with another element for the
purpose of transferring electrical energy.
12
IF
13
*UF
25
*RW
.50
SF
MF
14
ML
36
c,
650
15-3

I
7tp
14
Supersedes
1.0
1
2
3
4
5
6
7
8
9
10
11
12
13
16
17
18
19
20
25
30
35
40
45
50
~Q
Lower
Act ive
Contacts
14
15
Quality Factor - ~
Quality
Number of
Number of
Active
Contacts
Single-In-Line Package
Pin Grid Array
SOCKETS
06 Hours

Description
CONNECTORS,
l.-
----
-.
MIL-HDBK-217F
NOTICE 2
INTERCONNECTION
16.1
Ap =kb
ASSEMBLIES
WITH
PLATED
13)
Nptc+N2(~c+
7tQnEFaillJre@
THROUGH
HOLES
Hours
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted into the
plated through holes and assumes failures are predominately defect related. For beads using surface mount
technology, use Section ~6.2 For a mix of leaded devices mounted into plated through holes and surface
mount devices, use this model for the leaded devices and use Section 16.2 for the surface mount contribution.
A discrete wiring assembly with electroless deposit plated through holes is basidly a pattern of insulated wires
The primary cause of failure for both printed wiring and discrete
laid down on an adhesive coated substrate.
wiring assemblies is associated with plated through-hole (PTH) problems (e.g., barrel crackng).
Quality Factor - ~
Printed Wiring Assemb!yFtinted

Circuit Boards with PTHs
Quality
.000017
MIL-SPEC or Comparable Institutefor

Interconnecting, and Packaging
Electronic Circuits (lPC) Standads
(IPC Level 3)
Lower
Discrete Wiring with Electroless

A
Deposited PTH (< 2 Levels of Circuit@
.00011
of PIWs Factor - N1 and N2
Nu~r
Quantity
Factor I
Envimnmti
Automated Techniques: Quantity of

Wave Infrared (IR) or Vapor Phase
Soldered Functional PTlis
N,
Quantity of Hand Soldered PTHs

Complex~ Factor - ~
Number of Circuit Planes, P

S2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Environment
~E
GB
1.0
GF
2.0
GM
7.0
&s
5.0
13
Nu
5.0
%c
IF
8.0
16
%c
28
UF
19
%w
.50
SF
MF
10
ML
27
cL
500
Discrete Wwng w/PTH

xc
xc
1.3
1.6
1.8
2.0
2.2
2.4
2.6
2.8
2.9
3.1
3.3
3.4
3.6
3.7
3.9
4.0
L
1.0
Factor -xc
N2
ltQ
kb
Technology
.65P 63
Ifj-1
Supersedes
--1-
page
16-1
of Revision
F
,
...
~.
Jr--
-----------
MIL-I+DBK-217F
NOTICE 2
INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY
16.2
APPLICATION NOTE: The SMT Model was ctevelopecf to assess the life integfiiy of leadless and leaded
devices. It provides a relative measure of circuit card wearout due to thermal cycling fatgue failure of the
weakest link- SMT device. An analysis shouti be periorrned on all circuit board SMT components. The
component with the largest failure rate value (weakest link) is assessed as the overall board failure rate
due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and
the results do not consider solder or lead marwfacturi~ defects. This model is based on the techniques
developed in Reference 37.
ASMT
Average failure rate over the

expected equipment life cycle
due to surface mount device
This failure rate
wearout.
contrbutbn to the system is for
the Surface Mount Device on
each board exhibiting
the
highest absolute value of the
strain range:
where:
CR
Nf
I ( % AT -ucc(dT+TRIsE))
ECF
)LSMT = ~
ECF
-..._._,.
Lc
Nf=
0-.1
.11 -.20
.21 -.30
.31 -.40
.41 -.50
.51 -.60
,61-.70
.71 -.80
.81 -.90
> .9
Average number of thermal

cycies to failure
,
(1
3.5 &
where:
d=
.13
.15
.23
.31
.41
.51
.61
.68
.76
1.0
(as AT- Cfcc(AT+TRIsE))
h=
Solder joint height in miis for

Ieadiess devices. Default to h = 8
for ali leaded configurations.
w=
Circuit board substrate thermai

coefficient of expansion (TCE)
AT
Use environment temperature

extreme difference
material
thermal
Package
coefficientof expansion (TCE)
w%=
TRISE =
LC
Design
iife cycle
of the
equipment in which the circuit
board is operating
Temperature rise due to power

dissipation (Pal)
Pd
USMT = The Weibull characteristic life.
8JC
USMT is a function of device and

substrate material, the manufacturing
methods, and the
application environment used.
P=
16-2
Ix 10 +)-qn,c)
Distance from center of device to

the furthest solder joint in miis
(thousandths of an inch)
ral~
u w------ ~r~~- FCF
--ECF
-MT
Temperature cycling rate in

cycles per calendar hour. Base
on a thermal analysis of the circuit
board. Use table default values if
other estimates do not exist.
lx 10-6
Effective cumulative number of

the
Weibull
failures
over
ctwacte~ic
life.
Ffi*iVGI
_
k.....- ~llmldat~~
~Lc
eJcp
Thermal resistance /Watt

Power Dissipation (Watts)
Lead configuration factor
New Page
MIL-HDBK-217F
NOTIGE 2
16.2

as - Default TCE Substrate Values
CR - Cycling Rate Defau~ Values

Number Of
Equipme~ TYPe
Cycles/Hour
.0042
Telecorn~~~t~ns
.25
.021
Commercial Alrcrati
INustrial
Miliiafy Ahcnti
~pper Clad Invar
Corw@e
3
1
@artz Fiber
Lead Configuratbn
Glass Fiber
XLC - Lead Configuration Factor
LeadlesS
J or S Lead
Gull WIW
5
K
Cafbon-Fibr/EpOW
Kevlar Fiber
.5
(FigMer)
Copper Clad Mol@@mm
.03
.12
MilfiarY Gwti
Appl=tbm
Miliia~ Aircraft (Caf90)
11
FR-4 Multilayer Board w/Copper

[ Clad Invar
I
?ramicMuttilayer Bead
.17
computer
20
FR-4 Multilayer 60ard
.08
:onsumer (television, radio,

recorder)
18
FR4 Laminate
1.0
l~omotive
as
Substrate Material
%C
1
150
5,000
15
Epoxy/Glass Laminate
Polyamtie/Glass
13
Laminate
Polyam~/Kevlar
Laminate
Po&amtie/Wa~
LamiMte
@oxy/Kevkr Laminate
7
7
Alumina (Ceramk)
c - TCE Package Values
@mxy Ararnkf Fiber

,
,
7
6
Plastic
Ceramic
21
GF
26
GM
26
hJs
61
Nu
31
%c
AIF
%c
UF
%lw
Sc
MF
ML
CL
20
7
var
Porcelainked Copper Clad In
Difference
AT
7
Environment
GB
Fiberglass Tefbn Laminates
AT -Use Envimnmeti Default

Te~erature
PolyamM Aramti Fitwr

Epoxy-Quafiz
31
57
57
31
Fiberglass Ceramk Fibw
A large plastic encapsulated

E)cAMPLE:
Ieadless chip canier is mounted on a epoxyglass printed Wiring assetily.
The $esign
~ns~erations are: a square pa*age is 1480
roils on a side, solder height is 5 roils, power
dissipation is .5 watts, thermal resistance is
20 C/wati, the design life is 20 years and
envkOnmti is military grouti application. The
failure rate cfevebped is the impad of SMT for a
single circuit board and accounts for all SMT
devices on this board. This failure rate is added
to the sum of all of the component failure rates
on the circuti board.
7
N/A
NIA
hJIA
Nf
(xsMT
cfi
16-3
New Page
MIL-HDBK-217F
NOTICE 2
16.2
d
~f
(asAT-ucc(A~+TRlsE)) I 0 -6)-226@Lc)
35 (. R
For d:
d = ~ (1480) = 740 roils
For h:
h s 5 roils
For as:
as = 15 (Table - EPOXYGlass)
ForAT:
AT_ 21 (Table - GF)
For WC:
~.
For TRISE:
TRISE = eJC p = 20(.5) = 10C
For XLC:
ZLC = 1 (Table - Leadless)
For CR:
CR = .03 cycle~our
7 (Table - PlastiC)
(1
740
(.65)(5)
(Table - Milita~ Gmun@
(W2V
- 7W+1O)) 1)x 104
Nf
35
Nf
18,893 theml
629,767 hOu~
18,893 cycles
.03 cyiedbur
=
WMT
1-c
W=
*
226 (1)
cycles to failure
28
aSMT
ECF
.23 failures (TaMe - Effedive Cumulative Failures)
~SMT
ECF
~T
XSMT =
.23 faiiures
.0000004 failure~~ur
= 629,767 kNJrS =
.4 failures/106 hours
New Page
16-4
MIL-HDBK-217F
NOTICE 2
17.1
CONNECTIONS
used on all assemblies

Use the Intermnnedion
Assembly
APPLICATION NOTE: The failure rate model in this section applies to connedions
except those using plated through holes or surface mount technology.
connections to a circuit board using either plated through hole technology
Model in Sectbn 16 to account for
The failure rate of the strudure which supports Soldefless
the connedions
and parts, e.g.,
are
wrap connections
or surface mount technology.
non-plated-through hole boards and terminal straps, is considered to be zero.
chara~erized by SOIMwire wrapped under tenshn
around a rrmdel
post, whereas
hati soldeting
The following
is for a single
connedion.with wrapping does
not depend on a tension induced connedion.
L = LX=
Ub
06 Hours
Failures/l
Envimnmnt Factor-Xc
&
Base Faihm Rate - ~

Connedion
Type
Hand Solder, w/o Wrapping

Hand Solder, w/Wrapping
Soldeffess Wrap
Spfing Contad
Terminal Block
Environment
I
GB
.0013
GF
.000070
GM
.. .
Ns
.000015
Weld
Reflow Solder
~ (F/106 hm)
.00026
crimp
Clip Termin~bn
.0000068
~E
.-
1 .U
1A I
2.0
7.0
4.0
AC
.00012
4.0
6.0
.000069
IF
AN
.17
UF
.062
6.0
8.0
16
RW
.50
SF
MF
ML
CL
9.0
24
420
17-1
Supersedes
MIL-I-IDBK-217F
APPENDIX
A:
PARTS
COUNT
RELIABILITY
PREDICTION
Parts Count Reliablllty Predlctlon - This prediction method is applicable during bid proposal
and early design phases when insufficient information is available to use the part stress analysis models
shown in the main body of this Handbook. The information needed to apply the method is (1) generic part
types (including complexity for microcircuits) and quantities, (2) part quality levels, and (3) equipment
environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the
following tables, multiplying it by a quality factor, and then summing it with failure rates obtained for other
components in the equipment. The general mathematical expression for equipment failure rate with this
met hod is:
i=n
EQUIP
i=l
@g@i
Equation 1
for a given equipment environment where:
Total equipment failure rate (Failures/1 06 Hours)
Generic failure rate for the i h generic part (Failures/1 06 Hours)
7tQ
Quality factor for the i h generic part
Ni
Quantity of i h generic part
Number of different generic part categories in the equipment
~EQulP
Equation 1 applies if the entire equipment is being used in one environment. If the equipment
comprises several units operating In different environments (such as avionics systems with units in
airborne inhab~ed (Al) and uninhabited (AU) environments), tmn Equat~n 1 shou~ ~ aPPlied to the
potiions of the equipment in each environment. These environment-equipment failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in Section 3.
The quaMy factors to be used with each part type are shown with the applicable ~ tables and are not
necessarily the same values that are used in the Part Stress Analysis. Mcrocircuitshave an additional
rnuttip~ing factor, ~L, which aOCOuntsfor the matudty of the manUfaCt@ng process. For devices in
productiontwo years or more, no modifmtbn Is needed. For those in production less than two years,
h
should be multipliedby the appropriate XL faotor (See page A-4).
It shouldbe noted that no generic failure rates are shown for hybrid microcimuits. Each hybrid is a fairly
unique device. Since none of these devices have been standardized, their complexity cannot be
determined from their name or function. Identically or similarfy named hybrids can have a wide range of
complexitythat thwarts categorization for pufposes of this prediction method. If hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the prediction model in Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the
failure rate models of Section 5 through 23. The specific defautt values used for the model parameters are
shown with the kg Tables for microcircuits. Defautt parameters for all other part classes are summarized in
the tables stafling on Page A-12. For parts with characteristics which differ significantly fmm the assumed
defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can
be used.
A-1
MIL-HDBK-217F
NOTICE 2
APPENDIX
PARTS
A:
COUNT
i
..mtw
-wow
.
.-mri
Nmm
r-.-04
II
OJ
re-mo
.
0--=
In
c
9
ZS8
1%
in
In
Lr
IA?
Supersedes
A-2

page A-20f
Notice 1
MIL-HDBK-217F
NOTICE 2
APPENDIX
-mmo
FF)mo
-.-N
.,.
.efwm
. . . .
Cwlo
.P.r)
. .
QNN
*W*SJ
or-mm
to
-Nsrl
0000
0000
0000
9-..04
.,.
mmmm
.
000.
.-mm
. . .
A:
PARTS
COUNT
Qo
.
o--m
-Wol
r-mm%
000.
Omoe
.Pmm
.
.
Inulo)c
*WOO
Oooc
mmea
m@@o
Oooc
CVWF)N
Cwmlou)
mcwea
-NNC
0000
000<
of-Qe
F-WU
Oooc
Lo
Lc
Supersedes
page A-3 of Notice 1
A-3
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
c?
0
e-i
Ii
9
-GJR9416
OQ!QCNO
w-
u)
W
64
N
>
A-4
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
:
I
A-5
Supersedes

----
MIL-HDBK-217F
NOTICE
APPENDIX
PARTS
A:
COUNT
I
>
9
?4
m
z!
0
o
N
o
m
,
,
.
r
rU)
0
0
c
c
in
r)
w
m.
0<
m
$
8
Iii
o
i
i
u
c
c<
c
*
3=
r+
m
0
e
0,
rOA
0.
l-Fl-
2!
II
Ill
2!
?!
persedes
eviSIO!l
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS COUNT
1
<
,
Ln
c
r
8
(
1
-.
-mm
Supersedes
A-7

1
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
U7
o
m
1-
Q
e+
g)
s
o
!!M
. .
?-
mf
9,
.*-S
. .
-w
Ji
w
L
A-8
Supersedes
page A-80f
Nottce 1
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
. . . . .
f--
q.-
ul-rQti
o~elyo
-CM-N.
.
i.
1
i?
(i
G
-----------
Supersedes
.(-UCU
-----
page A-90f
Revision
----
--
mmmmr)mm
----
---
-----
- -
U-imbf)inmbnlr)m
-------
A-9
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
r
PARTS
.
0
*
m=
A-IO
.m
11 1
r
Supersedes
MIL-HDBK-217F
NOTICE 2
APPENDIX
Supersedes
..
..
-.
page
A-1 1 of Notice 1
A:
PARTS
COUNT
A-II
MIL-HDBK-217F
NOTICE 2
APPENDIX
0
.
~
PARTS
A:
COUNT
I
I
u
II
.--a
0
----
0.
0.
0.0.
--
0.
0.
r-
00
. .
0000
. . . .
b.
0.
T-
VIA
-- -u
tt{
LLI.L
330
u
0
m
A-12
Supersedes
page A-120f
Notice I
MIL-HDBK-217F
NOTICE 1
APPENDIX
Supersedes
page A-1 3 of Rewsion F
A:
PARTS
COUNT
A-13
MIL-HDBK-217F
NOTICE 2
APPENDIX
C:
26.
VHSIC Impact on System Reliability, RADC-TR-88-1 3, AD B122629.
27.
Reliability Assessment of Surface Mount Technology,
28.
Reliability
Prediction
Models
for Discrete
RADC-TR-88-72,
Semiconductor
Devices,
BIBL1OGRAPHY
AD A193759.
RADC-TR-88-97,
AD
A200529.
This study developed new failure rate prediction models for GaAs Power FETS, Transient
Suppressor Diodes, infrared LEDs, Diode Array Displays and Current Regulator Diodes.
29.
Impact
of Fiber
Optics
on System
Reliability
and Maintainability,
AD
RADC-TR-88-124,
A201946.
30.
Vl+SIC/Vl-tSIC
Like Reliability Prediction
Modeling, RADC-TR-89-1
71, AD AZ 4601.
This study provides the basis for the VHSIC model appearing in MIL-HDBK-217F,
5.
31.
Reliability
Assessment
Using Finite Element Techniques, RADC-TR-89-281,
Section
AD MI 6907.
This study addresses surface mounted solder interconnections

and microwire boards platedThe report gives a detailed account of the factors to be
through-hole
(PTH) connections.
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit.
32.
Reliability Analysis/Assessment
of Advanced Technologies,
RADC-TR-90-72,
ADA 223647.
This study provides the basis for the revised microcircuit models (except VHSIC and Bubble
IUemories) appearing in MIL-HDBK-217F, Section 5.
33.
Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices, AFWAL-TR81-1052.
34.
Reliability/Design Thermal Applications,
35.
NASA Parts Application Handbook, MIL-HDBK-978-B (NASA).

This handbook is a five volume series which discusses a full range of electrical, electronic and
electromechanical component parts. It provides extensive detailed technical information for
each component
derating,
failure
MIL-HDBK-251.
part such as: definitions,

screening
mechanisms,
construction
techniques,
details,
operating
standard
parts,
characteristics,
environmental
considerations, and circuit application.

36.
Nonelectronic Parts Reliability Data 1991 , NPRD-91.

This report contains field failure rate data on a variety of electrical,
mechanical,
electromechanical and microwave parts and assemblies (1400 different pafi types). It is
available from the Reliability Analysis Center, PO Box 4700, Rome, NY 13440-8200,
Phone: (31 5) 337-0900.
37.
Reliability Assessment of Critical Electronic Components, RL-TR-92-1 97, AD-A256996.

This study is the basis for new or revised failure rate models in MIL-HDBK-217F, Notice 2,
resistors, capacitors, transformers, coils, motors,
for the following device categories:
relays, switches, circuit breakers, connectors, printed circuit boards and surface mount
technology.
Supersedes
page C-3 of Revision
c-3
MI L-HDBK-217F
NOTICE 2
APPENDIX
C:
BIBLIOGRAPHY
38. Handbook of Reliability Prediction Procedures for Mechanical Equipment, NSWC-94/L07.

This Handbook includes a methodology for nineteen basic mechanical components for
evaluating a design for R&M that considers the material properties, operating environment
and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare
Center, Bethesda, MD 20084-5000, Phone @Ol ) 227-1694.
Custodians:
Army - CR
Navy - EC
Air Force -17
Preparing Activity:
Air Force -17
Pro)ect No. RELI-0074
Review Activities:
Army - Ml, AV, ER
Navy - St-i, AS, OS
Air Force -11, 13, 15, 19, 99
User Activities:
Army - AT, ME, GL
Navy - CG, MC, YD, TO

Air Force -85
c-4
Supersedes
page C-4 of Revision
STANDARDIZATION
DOCUMENT
NAME OF SU8MlTflNG
Reliability
hJotlce 2
4.
ORGANRATION
Pred~ctlon of Electronic
TYPE OF ORGANKATtON
n
ADDRESS
(Street, Ory, State, 21P Code)
6.
I
b
Recommended
@Padfy)
c.
Raaaon/l?a@wle
forRacommetition:
Wording
REMARKS
7a.
NAME OF SUBM1lTER
c.
MAILINQ ADDRESS
nuawbw9
- -.
b.
(fJiSf,
FIrsf,
Ml) - @hOfld
(Streef, Ctfy, Sfafe, ZIP Code) - Optional
DD 82M
MAR 1426
l-*4a
OTHER
PROBLEM AREAS
a
Pamgraph Number and Wording
USER
MANUFACTURER
c1
1.
Equipment
(Marx one)
VENDOR
b.
PROPOSAL
DOCUMENT TfTLE
NUMBER
MIL-HDBK-217F,
.
DOCUMENT
IMPROVEMENT
(See /nstrucfion -Reveme Side)
.-
----
WORK TELEPHONE NUMBER

(hciude Ama Code]. 00 tonal
8.
DATE Of SU6MtSS10f4
----
---
(YYMkVDO)
------
-.
I
INSTRUCTION S In a comlnumg eftorf to make our 8tMIdarctMtton

documents
better, the 000 Provtdes thts form for u6e in 6ubmlttkyj
comments
Thw hxrn may be
and sug ostlons tor Irnprrwemrmts
All users
of m!lltaw stanctardlzallon
documents
are Wted lo provloe surJgestlons
along me t(nos md(catod IaDed along the 100se edge (DO NOT STAPLE, I dnd Molded In bIocK 5, be as spectflc as poss!blo
de(ache 2 IOIOW
about particular problem areas such as wofdln
wtvctI required Inlerprelahon, was 100 ngla, resmctwe, loose, amtxcyous. or was mcompaoble,
Enter m block 6 any remarks nol relarea to a spectfic paragraph of the
wordm changes winch wou5 alleviate the problems
and give Proposed
were recewed
If block 7 IS II ! ed out, an acknowledgement WIIIbe mahd 10 you MM! 30 days 10 let you know that your COmmenlS
document
and are tremg cons(aerea
NOTE.
This form may not be used to request copies
Comments
6utrmltted
requirements on current contracts
referenced
document(s)
or ?0 amend
(XWW6CIMI
of documents,
on
thh
fofm
nor to request
do not con611tute
wawers, dev!atlons. or c~anf!cat~on of specil~catlon

or Imply aumotiza!lon to waive anyPortion
of the
requirements
(Fold along this line)
(Fold a/ong fhk he)
DEPARTMENT OF THE AIR FORCE

RIJERSS
Griffiss AFB, NY 13441-5700
OFFICIAL BUSINESS
PENAllY
FOR PRIVATE USE S300
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111111
n
MAIL ,~,
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NOTICE

To all holders of MIL-HDBK-217F

The following pagesofMIL-HDBK-217F

have been revised and supersede the pagea Med.

9-1 through 9-29

9-1 through 9-3

15-1 through 15-3

A-1 through A-18

14-1 mrougn 144

14-1 through 14-2

Project No, RELI-0074

Army - AT, ME, GL

for publlc release; dlstnbutlon

I NOT MEASUREMENT SENSITIVE]

THIS HANDBOOK IS FOR GUIDANCE ONLY -DO NOT

for publlc release; drstrlbu!lcn

Every effort has been

made to reflect the latest information

..................... ................... ....... ....... ... ..... ... ......

Part Stress Analysis Prediction ................................................................................

. ..... .......................... ................. ..

. .... ... ............ .... .................. ...... .... .... ..

C2 Table for All .......................................................................................................

XE, ~ and ZQ Tables for All ............. ................................................*.**................0.

(All Except Hybrids) ......................*.*... ............................ ...*.....*,.

(For Hybrids) ...................................................................... .*.......

Gate/Logic Arrays and Microprocessors

Transistors, High Frequency, Si FET ..........................

Emitters ... .... ........ .............

Optoelectronics, Alphanumeric Displays .........0..................

....................................................... ......*..... .......... .*.*

. .. .... .. ..... .... ...*.. ... .. ...*... ... ...

.. ..... .... ...

Parts with Mu)ti-Level Quality Specifications ......................... ...............................

Reliability Analysis Checklist ...... .......................................................................

Approximate Thermal Resistance for Semicond@or

upon a recently completed

new models to address

Updated failure rate models for transformers,

A new model to address

coils, motors, relays,

switches, circuit breakers,

technology solder connections.

Digital and Linear Gate/Logic

MOS Digital and Linear

Bipolar and MOS Memory Devices

GaAs Digital Devices

and MOS Digital

page VII of Revision

from the prewous

(~~), and the environmental!

been revised to be simpler to use, to delete the temperature

A new model for Very High Speed Integrated

of the entire handbook

to make it easier to use.

rate model for Network

(zE) from 27 to 14.

BOLD BLACK LZITERS

LABORA~RY (AFMC), AlTN:

If YOU have anY uuestim

This handbook cites some specifications

Capacitors, Fixed, Mica Dielectric, General Specification for

Resistor, Fixed, Composition (Insulated), General Specification for

(All Except Hybrids) .......................... ............................ ........,.

....................................................... ........... .......... ..*

. .. .... .. ..... .... ..... ... .. ...... ... ...