CMD201 Ver 1 1 1214

Let Performance Drive
CMD201
DC-20 GHz Distributed Power Amplifier
Features
Applications
Ultra wideband performance

High linearity
High output power
Excellent return losses
Small die size
Microwave radio and VSAT

Telecom infrastructure
Test instrumentation
Military and space
Fiber optics
Description
Functional Block Diagram
The CMD201 is wideband GaAs MMIC distributed power amplifier die which operates
from DC to 20 GHz. The amplifier delivers
greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm
and output IP3 of 38 dBm at 10 GHz. The
CMD201 is a 50 ohm matched design which
eliminates the need for RF port matching. The
CMD201 offers full passivation for increased
reliability and moisture protection.
ACG1
ACG2
RFOUT & Vdd
Vgg2
RFIN
Vgg1
ACG4
ACG3
7 6
Electrical Performance - Vdd = 10.0 V, Vgg1 = -0.55 V, Vgg2 = 5.0 V , TA = 25 oC, F = 10 GHz
Parameter
Min
Frequency Range
Typ
Max
Units
DC - 20
GHz
Gain
12
dB
Noise Figure
3.4
dB
Input Return Loss
16
dB
Output Return Loss
17
dB
Output P1dB
29
dBm
Supply Current
400
mA
ver 1.1 1214
Custom MMIC
1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD201
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
Typ
Max
Units
Drain Voltage, Vdd
12.0 V
Vdd
8.0
10.0
12.0
Gate1 Voltage, Vgg1
-2.0 to 0 V
Idd
350
400
450
mA
Gate2 Voltage, Vgg2
6.0 V
Vgg1
-0.55
+30 dBm
Vgg2
5.0
RF Input Power
Channel Temperature, Tch
150 C
Power Dissipation, Pdiss
5.43 W
Thermal Resistance
Electrical performance is measured at specific

test conditions. Electrical specifications are not
guaranteed over all recommended operating conditions.
11.9 C/W
Operation of this device outside the maximum

ratings may cause permanent damage.
Operating Temperature
-55 to 85 C
Storage Temperature
-55 to 150 C
Electrical Specifications, Vdd = 10.0 V, Vgg1 = -0.55 V, Vgg2 = 5.0 V, TA = 25 oC

Parameter
Min
Frequency Range
Gain
Typ
Max
Min
DC - 6
8
11
Typ
Max
Units
6 - 20
GHz
12
dB
Noise Figure
3.5
dB
Input Return Loss
15
17
dB
Output Return Loss
10
18
dB
29
dBm
35
dBm
Output P1dB
27
Output IP3
29.5
25
40
Supply Current
300
400
500
300
400
500
mA
Gain Temperature
Coefficient
0.009
0.014
dB/C
Noise Figure Temperature

Coefficient
0.01
0.012
dB/C
ver 1.1 1214
Custom MMIC
CMD201
Typical Performance
Broadband Performance, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V, Idd = 400 mA, TA = 25 oC
15
10
S11
S22
S21
NF
-5
-10
-15
-20
Noise Figure/dB
Response/dB
0
0
10
12
14
16
18
20
22
24
26
28
30
Frequency/GHz
Narrow-band Performance, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V, Idd = 400 mA, T=25 oC
15
10
S11
S22
S21
NF
-5
-10
-15
-20
Noise Figure/dB
Response/dB
0
0
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Custom MMIC
ver 1.1 1214
CMD201
Typical Performance
Gain vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V
15
14
13
12
11
10
Gain/dB
9
8
7
+25C
+85C
-55C
5
4
3
2
1
0
0
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Noise Figure vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

10
+25C
+85C
-55C
8
Noise Figure/dB
0
3
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Custom MMIC
ver 1.1 1214
CMD201
Typical Performance
Output Power, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V, TA = 25 oC
35
34
P1dB
33
Psat
32
31
30
29
Response/dBm
28
27
26
25
24
23
22
21
20
19
18
17
16
15
2
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
P1dB vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

35
34
33
+25C
+85C
32
-55C
31
30
29
P1dB/dBm
28
27
26
25
24
23
22
21
20
19
18
17
16
15
2
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Custom MMIC
ver 1.1 1214
CMD201
Typical Performance
Output IP3 vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V
45
+25C
+85C
-55C
40
Output IP3/dBm
35
30
25
20
15
10
2
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
ver 1.1 1214

Custom MMIC
CMD201
Mechanical Information
Die Outline (all dimensions in microns)
247.00
114.00
5
1550.00
1384.00
728.00
863.00
411.00
7 6
162.00
1781.00
2058.50
2185.50
2820.00
Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 85 microns thick
5. DC bond pads are 100 microns square
ver 1.1 1214

Custom MMIC
CMD201
Pad Description
Pad Diagram
3
5
2
1
8
7 6
Functional Description
Pad
Function
Description
RF in
50 ohm matched input
Vgg2
Power supply voltage

Decoupling and bypass caps required
3, 4
ACG1, 2
Low frequency termination. Attach bypass

capacitor per application circuit
RF out &
Vdd
Power supply voltage and 50 ohm matched

output
Schematic
RF in
Vgg2
ACG1
ACG2
RF out & Vdd
ACG3
6, 7
ACG3, 4
Low frequency termination. Attach bypass

capacitor per application circuit
Vgg1
Power supply voltage

Decoupling and bypass caps required
ACG4
RF in
Vgg1
GND
Backside
Ground
Connect to RF / DC ground
ver 1.1 1214
Custom MMIC
CMD201
Applications Information
Assembly Guidelines
The backside of the CMD201 is RF ground. Die attach should be accomplished with electrically and
thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures
should be followed for high frequency devices. The top surface of the semiconductor should be made
planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity
to the DC connections on chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use
of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.
The RF input and output require a double bond wire as shown.
The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.
Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle
with care.
Assembly Diagram
To Vgg2
0.1 uF CAP TO GROUND
0.1 uF BYPASS CAP

100 pF BYPASS CAP
(example: Presidio part
LSA1515B101M2H5R-L)
100 pF CAP TO GROUND
To Vdd
RF out
RF in
100 pF CAP TO GROUND
100 pF BYPASS CAP
0.1 uF CAP TO GROUND

(example: Presidio part
MVB4080X104ZGK5R3L)
0.1 uF BYPASS CAP
To Vgg1
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions
should be observed during handling, assembly and test.
ver 1.1 1214
Custom MMIC
CMD201
Applications Information
Application Circuit
100 pF
0.1 uF
Vdd
3
2
Vgg2
0.1 uF
100 pF
4
6
RF out
7
1
RF in
100 pF
0.1 uF
Vgg1
0.1 uF
100 pF
Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network.
External DC block is required on RF input.
Biasing and Operation

The CMD201 is biased with a positive drain supply, a negative gate1 supply and a positive gate2 supply.
Performance is optimized when the drain voltage is set to +10 V. The recommended gate1 and gate2
voltages are -0.55 V and +5 V respectively.
Turn ON procedure:
1.Apply gate voltage Vgg1 and set to -0.55 V
2.Apply drain voltage Vdd and set to +10 V
3.Apply gate voltage Vgg2 and set to +5V
Turn OFF procedure:
1.Turn off gate voltage Vgg2
2.Turn off drain voltage Vdd
3.Turn off gate voltage Vgg1
ver 1.1 1214
Custom MMIC

CMD201 Ver 1 1 1214

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CMD201 Ver 1 1 1214

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Let Performance Drive

Ultra wideband performance

Microwave radio and VSAT

Functional Block Diagram

RFOUT & Vdd

Input Return Loss

Output Return Loss

Recommended Operating Conditions

Drain Voltage, Vdd

Gate1 Voltage, Vgg1

Gate2 Voltage, Vgg2

Power Dissipation, Pdiss

Electrical performance is measured at specific

Operation of this device outside the maximum

Electrical Specifications, Vdd = 10.0 V, Vgg1 = -0.55 V, Vgg2 = 5.0 V, TA = 25 oC

Input Return Loss

Output Return Loss

Noise Figure Temperature

ver 1.1 1214

Noise Figure vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

ver 1.1 1214

P1dB vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

ver 1.1 1214

ver 1.1 1214

ver 1.1 1214

50 ohm matched input

Power supply voltage

Low frequency termination. Attach bypass

Power supply voltage and 50 ohm matched

RF out & Vdd

Low frequency termination. Attach bypass

Power supply voltage

0.1 uF BYPASS CAP

100 pF CAP TO GROUND

100 pF BYPASS CAP

0.1 uF CAP TO GROUND

0.1 uF BYPASS CAP

Biasing and Operation

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