MegaMOSTMFET

IXTH 20N60
IXTM 20N60

VDSS = 600 V
= 20 A
ID25
RDS(on) = 0.35

N-Channel Enhancement Mode

Symbol

Test Conditions

Maximum Ratings

VDSS

TJ = 25C to 150C

600

VDGR

TJ = 25C to 150C; RGS = 1 M

600

VGS

Continuous

20

VGSM

Transient

30

ID25

TC = 25C

15N60
20N60

15
20

A
A

IDM

TC = 25C, pulse width limited by TJM

15N60
20N60

60
80

A
A

PD

TC = 25C

300

-55 ... +150

TJM

150

T stg

-55 ... +150

TJ

Md

Mounting torque

TO-247 AD (IXTH)

D (TAB)

TO-204 AE (IXTM)

D
G = Gate,
S = Source,

TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

Features
l
l
l
l

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

VDSS

VGS = 0 V, ID = 250 A

600

VGS(th)

VDS = VGS, ID = 250 A

IGSS

VGS = 20 VDC, VDS = 0

IDSS

VDS = 0.8 VDSS

VGS = 0 V

R DS(on)

D = Drain,
TAB = Drain

1.13/10 Nm/lb.in.

Weight

Symbol

TJ = 25C
TJ = 125C

VGS = 10 V, ID = 0.5 ID25

Pulse test, t 300 s, duty cycle d 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

2000 IXYS All rights reserved

V
4.5

100

nA

200
1

A
mA

0.35

International standard packages

Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times

Applications
l

l
l
l

Switch-mode and resonant-mode

power supplies
Motor control
Uninterruptible Power Supplies (UPS)
DC choppers

Advantages
l

l
l

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)
Space savings
High power density

91537E(5/96)

1-4

IXTH 20N60
IXTM 20N60
Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

gfs

VDS = 10 V; ID = 0.5 ID25, pulse test

C iss
C oss

VGS = 0 V, VDS = 25 V, f = 1 MHz

C rss
t d(on)

11

18

4500

pF

420

pF

140

pF

20

40

ns

tr

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

43

60

ns

td(off)

RG = 2 , (External)

70

90

ns

40

60

ns

150

170

nC

29

40

nC

60

85

nC

tf
Q g(on)
Q gs

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

Q gd
R thJC

0.42

R thCK

0.25

Source-Drain Diode

K/W
K/W

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

Symbol

Test Conditions

IS

VGS = 0 V

20

ISM

Repetitive;

80

VSD

IF = IS, VGS = 0 V,
Pulse test, t 300 s, duty cycle d 2 %

1.5

t rr

IF = IS, -di/dt = 100 A/s, VR = 100 V

TO-247 AD (IXTH) Outline

Terminals: 1 - Gate
3 - Source

2 - Drain
Tab - Drain

Dim.

Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A1
2.2
2.54
.087 .102
A2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b1
1.65
2.13
.065 .084
b2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC

TO-204AE (IXTM) Outline

600

ns

Pins

Dim.
A
A1
b
D
e
e1

1 - Gate
2 - Source
Case - Drain

Millimeter
Min.
Max.
6.4
11.4
1.53
3.42
1.45
1.60
22.22
10.67 11.17
5.21
5.71

L
11.18 12.19
p 3.84
4.19
p 1 3.84
4.19
q
30.15 BSC
R 12.58 13.33
R1 3.33
4.77
s
16.64 17.14

2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025

Inches
Min. Max.
.250 .450
.060 .135
.057 .063
.875
.420 .440
.205 .225
.440
.151
.151
1.187
.495
.131
.655

.480
.165
.165
BSC
.525
.188
.675

2-4

IXTH 20N60
IXTM 20N60

Fig. 1 Output Characteristics

40

VGS = 10V

TJ = 25C

40

Fig. 2 Input Admittance

20

5V

30

ID - Amperes

ID - Amperes

6V

30

TJ = 25C

20

10

10

10

15

20

VDS - Volts

10

2.25

1.30
1.25
1.20

VGS = 10V

1.15
1.10
1.05

VGS = 15V

1.00

2.00
1.75
1.50

ID = 10A

1.25
1.00
0.75

0.95
0.90
0

10

15

20

25

30

35

0.50
-50

40

-25

ID - Amperes

25

50

75

Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

35

1.2

30

1.1

BV/VG(th) - Normalized

VGS(th)

25
20
15

20N60

15N60

10

BVDSS

1.0
0.9
0.8
0.7
0.6

5
0
-50

100 125 150

TJ - Degrees C

Fig. 5 Drain Current vs.

Case Temperature

ID - Amperes

2.50

RDS(on) - Normalized

RDS(on) - Normalized

Fig. 4 Temperature Dependence

of Drain to Source Resistance

TJ = 25C

1.35

VGS - Volts

Fig. 3 RDS(on) vs. Drain Current

1.40

-25

25

50

75

TC - Degrees C

2000 IXYS All rights reserved

100 125 150

0.5
-50

-25

25

50

75

100 125 150

TJ - Degrees C

3-4

IXTH 20N60
IXTM 20N60

Fig.7 Gate Charge Characteristic Curve

Fig.8 Forward Bias Safe Operating Area

10

100
VDS = 300V
ID = 20A
IG = 10mA

9
8

100s

Limited by RDS(on)

ID - Amperes

VGE - Volts

10s

6
5
4
3

10
1ms

10ms

100ms

2
1
0

0.1
0

20

40

60

80

100

120

140

10

Gate Charge - nCoulombs

VDS - Volts

Fig.9 Capacitance Curves

4500

Fig.10 Source Current vs. Source

to Drain Voltage
80

Ciss

4000

70

3500

60
f = 1 MHz
VDS = 25V

3000

ID - Amperes

Capacitance - pF

600

100

2500
2000
1500

50
40

TJ = 125C

30
TJ = 25C

20

1000

Coss

500

10

Crss

0
0

10

15

20

0
0.00

25

0.25

VCE - Volts

0.50

0.75

1.00

1.25

1.50

VSD - Volts

Fig.11 Transient Thermal Impedance

Thermal Response - K/W

D=0.5

0.1

D=0.2
D=0.1
D=0.05

0.01 D=0.02
D=0.01
Single Pulse

0.001
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width - Seconds

2000 IXYS All rights reserved

4-4