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Z04xxxF

SENSITIVE GATE TRIACS


FEATURES
IT(RMS) = 4A
VDRM = 400V to 800V
IGT 3mA to 25mA

A1
A2

DESCRIPTION
The Z04xxxF series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where high gate sensitivity or high
switching performances are required (like touch
dimmers, fan, electrovalue control,...).

TO202-3
(Plastic)

ABSOLUTE RATINGS (limiting values)


Symbol
IT(RMS)

ITSM

I2 t
dI/dt

Tstg
Tj
Tl

Parameter

Value

Unit

Tc= 75 C

Ta= 25 C

0.95

tp = 8.3 ms

22

tp = 10 ms

20

I2t Value for fusing

tp = 10 ms

A2s

Critical rate of rise of on-state current


IG = 50 mA
diG /dt = 0.1 A/s.

Repetitive
F = 50 Hz

10

A/s

Non
Repetitive

50

RMS on-state current


(360 conductionangle)
Non repetitive surge peak on-state current
(Tj initial = 25C )

Storage and operating junction temperature range


Maximum lead temperature for soldering during 10s at
4.5mm from case

Symbol
VDRM
VRRM

August 1998 Ed : 1A

- 40, + 150
- 40, + 125

260

Voltage

Parameter
Repetitive peak off-state voltage
Tj = 125C

Unit

400

600

800

1/4

Z04xxxF
THERMAL RESISTANCES
Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

100

C/W

Rth(j-c)

Junction to case for D.C

10

C/W

Rth(j-c)

Junction to case for A.C 360conduction angle (F=50Hz)

7.5

C/W

GATE CHARACTERISTICS
PG (AV)= 0.2 W max. PGM = 3 W max. (tp = 20 s)
VGD = 0.2Vmin. (VD=VDRM RL=3.3k Tj= 125C)

IGM = 1.2 A max. (tp = 20 s)

ELECTRICAL CHARACTERISTICS
Symbol

Test Conditions

Sensitivity

Quadrant

IGT

VD=12V (DC) RL=33

Tj= 25C

I-II-III-IV

MAX

VGT

VD=12V (DC) RL=33

Tj= 25C

I-II-III-IV

MAX

IH *

IT= 50 mA Gate open

Tj= 25C

IG= 1.2 IGT

Tj= 25C

IL

05

09

10

10

25

1.5

mA
V

MAX

10

25

mA

I-III-IV

MAX

10

15

25

mA

II

MAX

12

15

25

50

VTM *

ITM= 5.5A tp= 380s

Tj= 25C

MAX

IDRM
IRRM

VD = VDRM
VR = VRRM

Tj= 25C

MAX

Tj= 110C

MAX

200

VD=67%VDRM
Gate open

Tj= 110C

MIN

10

20

100

(dI/dt)c = 1.3 A/ms

Tj= 110C

MIN

0.5

(dI/dt)c = 1.8 A/ms

Tj= 110C

MIN

dV/dt *
(dV/dt)c *

ORDERING INFORMATION

04

05

F
PACKAGE :
F=TO202-3

TRIAC TOP GLASS


CURRENT

SENSITIVITY

200

VOLTAGE

V/s
V/s

* For either polarity of electrode A2 voltage with reference to electrodeA 1

2/4

Unit

02

V/s

Z04xxxF
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.

Fig.2 : Correlation between maximum RMS power


dissipation and maximum allowable temperature
(Tamb and Tcase).
Tcase (oC)

P (W)

P(W)

7
180

= 120
o

= 90
o

-85

-95

= 60

-105

0
0

Rth(j-c)

= 30

-75

= 180

T(RMS)

-115

Rth(j-a)

(A)

Fig.3 : RMS on-state current versus case temperature.

Tamb ( C)

0
0

20

40

60

80

100

120

-125
140

Fig.4 : Relative variation of thermal impedance


junction to ambient versus pulse duration.

I T(RMS) (A)

Zth(j-a)/Rth(j-a)

1.00

0.8
0.6
o

= 180

0.10

0.4
0.2

Tamb(oC)
0
0

tp( s)

10 20 30 40 50 60 70 80 90 100 110 120 130

Fig.5 : Relativevariation of gate trigger current and


holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]

Ih[Tj]
o
Ih[Tj=25 C]

1E-2

1E-1

1 E +0

1 E +1

1E +2 5 E +2

Fig.6 : Non repetitive surge peak on-state current


versus number of cycles.
ITSM(A)

20

2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4

0.01
1E-3

Tj initial = 25 C

15
Igt

10
Ih

5
Number of cycles

Tj(oC)

-40

-20

20

40

60

80

100

120 140

0
1

10

100

1000

3/4

Z04xxxF
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
I TSM (A). I2 t (A 2 s)

Fig.8 : On-statecharacteristics(maximum values).

I TM (A)

100

100
Tj initial = 25oC

Tj initial
o
25 C

10

I TSM

10
Tj max
Tj max
Vto =0.98 V
Rt =0.180

1
It
2

VTM (V)

tp (ms)

1
1

10

0.1
0

0.5

1.5

2.5

3.5

4.5

PACKAGE MECHANICAL DATA


TO202-3 (Plastic)
DIMENSIONS
REF.

A
C
O
F

H
N1
N

Millimeters
Typ.
Max.

Inches
Typ.
Max.

10.1

0.398

A
C

7.3

0.287

10.5

0.413

E
F

7.4

0.290

0.51

0.020

J
M

1.5
4.5

0.059
0.177

N
N1

2.54

O
P

1.5

0.059

5.3

0.209
0.100

1.4
0.7

0.055
0.028

Marking : type number


Weight : 1 g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of
use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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