Diodos Bas316 16 516

BAS16 series
High-speed switching diodes

Rev. 05 25 August 2008
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
Configuration
Package
configuration
NXP
JEITA
JEDEC
BAS16
SOT23
TO-236AB
single
small
BAS16H
SOD123F
single
small and flat lead
BAS16J
SOD323F
SC-90
single
very small and flat

lead
BAS16L
SOD882
single
leadless ultra
small
BAS16T
SOT416
SC-75
single
ultra small
BAS16VV
SOT666
triple isolated
ultra small and flat

lead
BAS16VY
SOT363
SC-88
triple isolated
very small
BAS16W
SOT323
SC-70
single
very small
BAS316
SOD323
SC-76
single
very small
BAS516
SOD523
SC-79
single
ultra small and flat

lead
1.2 Features
n High switching speed: trr 4 ns
n Low leakage current
n Repetitive peak reverse voltage:
VRRM 100 V
1.3 Applications
n High-speed switching
n General-purpose switching
n Low capacitance
n Reverse voltage: VR 100 V
n Small SMD plastic packages
BAS16 series
NXP Semiconductors
1.4 Quick reference data

Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
100
Per diode
VR
reverse voltage
IR
reverse current
trr
reverse recovery time
[1]
VR = 80 V
[1]
0.5
ns
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BAS16; BAS16T; BAS16W

1
anode
not connected
cathode
3
1
2
006aaa764
2
006aaa144
BAS16H; BAS16J; BAS316; BAS516

1
cathode
anode
[1]
006aab040
001aab540
BAS16L
1
cathode
anode
[1]
006aab040
Transparent
top view
BAS16VV; BAS16VY
1
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
3
001aab555
3
006aab106
[1]
The marking bar indicates the cathode.
BAS16_SER_5
Product data sheet
NXP B.V. 2008. All rights reserved.
2 of 20
BAS16 series
NXP Semiconductors
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
BAS16
plastic surface-mounted package; 3 leads
SOT23
BAS16H
SOD123F
BAS16J
SC-90
SOD323F
BAS16L
leadless ultra small plastic package; 2 terminals;

body 1.0 0.6 0.5 mm
SOD882
BAS16T
SC-75
SOT416
BAS16VV
SOT666
BAS16VY
SC-88
SOT363
BAS16W
SC-70
SOT323
BAS316
SC-76
SOD323
BAS516
SC-79
SOD523
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BAS16
A6*
BAS16H
A1
BAS16J
AR
BAS16L
S2
BAS16T
A6
BAS16VV
53
BAS16VY
16*
BAS16W
A6*
BAS316
A6
BAS516
[1]
* = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BAS16_SER_5
Product data sheet
3 of 20
BAS16 series
NXP Semiconductors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse

voltage
100
VR
reverse voltage
100
IF
forward current
BAS16
[1]
215
mA
BAS16H
BAS16L
[2]
215
mA
BAS16T
[1]
155
mA
[1][3]
200
mA
BAS16W
[1]
175
mA
BAS16J
BAS316
BAS516
[1]
250
mA
500
mA
tp = 1 s
tp = 1 ms
tp = 1 s
0.5
BAS16VV
BAS16VY
IFRM
repetitive peak forward

current
tp 0.5 s;
0.25
IFSM
non-repetitive peak forward

current
square wave
Ptot
[4]
total power dissipation

BAS16
Tamb 25 C
[1]
250
mW
BAS16H
Tamb 25 C
[2][5]
380
mW
830
mW
550
mW
250
mW
[1]
170
mW
[1][3]
180
mW
250
mW
[1]
200
mW
400
mW
500
mW
[6]
[5][6]
[7]
BAS16J
Tamb 25 C
[5][6]
[7]
BAS16L
Tamb 25 C
[2][5]
[6]
BAS16T
Tsp 90 C
BAS16VV
Tamb 25 C
[5][8]
BAS16VY
Tsp 85 C
[1][3]
[8]
BAS16W
Tamb 25 C
BAS316
Tsp 90 C
[1][6]
BAS516
Tsp 90 C
[1][5]
[6]
BAS16_SER_5
Product data sheet
4 of 20
BAS16 series
NXP Semiconductors
Table 6.
Limiting values continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per device
Tj
junction temperature
150
Tamb
ambient temperature
65
+150
Tstg
storage temperature
65
+150
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB with 60 m copper strip line.
[3]
Single diode loaded.
[4]
Tj = 25 C prior to surge.
[5]
Reflow soldering is the only recommended soldering method.
[6]
Soldering point of cathode tab.
[7]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[8]
Soldering points at pins 4, 5 and 6.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from

junction to ambient
in free air
[1]
500
K/W
[2][3]
330
K/W
[3][4]
150
K/W
BAS16J
[3][4]
230
K/W
BAS16L
[2][3]
500
K/W
BAS16VV
[2][3]
700
K/W
410
K/W
625
K/W
BAS16
330
K/W
BAS16W
300
K/W
BAS16
BAS16H
[5]
[3][4]
[5]
BAS16W
Rth(j-t)

junction to tie-point
BAS16_SER_5
Product data sheet
[1]
5 of 20
BAS16 series
NXP Semiconductors
Table 7.
Thermal characteristics continued
Symbol
Parameter
Rth(j-sp)

junction to solder point
Conditions
BAS16H
[6]
BAS16J
[6]
Min
Typ
Max
Unit
70
K/W
55
K/W
350
K/W
[5][7]
260
K/W
BAS316
[6]
150
K/W
BAS516
[6]
120
K/W
BAS16T
BAS16VY
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB with 60 m copper strip line.
[3]
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5]
Single diode loaded.
[6]
Soldering point of cathode tab.
[7]
Soldering points at pins 4, 5 and 6.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
IF = 150 mA
1.25
Per diode
VF
IR
Cd
[1]
forward voltage
reverse current
diode capacitance
VR = 25 V
30
nA
VR = 80 V
0.5
VR = 25 V; Tj = 150 C
30
VR = 80 V; Tj = 150 C
50
1.5
pF
f = 1 MHz; VR = 0 V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
BAS516
trr
VFR
pF
reverse recovery time
[2]
ns
forward recovery voltage
[3]
1.75
[1]
Pulse test: tp 300 s; 0.02.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
[3]
When switched from IF = 10 mA; tr = 20 ns.
BAS16_SER_5
Product data sheet
6 of 20
BAS16 series
NXP Semiconductors
006aab132
103
IF
(mA)
mbg704
102
IFSM
(A)
102
10
10
1
(1)
(2)
(3)
(4)
101
101
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF (V)
10
102
103
104
tp (s)
(1) Tamb = 150 C
Based on square wave currents.
(2) Tamb = 85 C
Tj = 25 C; prior to surge
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1.
Forward current as a function of forward

voltage; typical values
Fig 2.
006aab133
102
IR
(A)
10
(1)
(2)
Non-repetitive peak forward current as a

function of pulse duration; maximum values
mbg446
0.8
Cd
(pF)
0.6
101
0.4
(3)
102
103
0.2
104
(4)
105
0
0
20
40
60
80
100
VR (V)
(1) Tamb = 150 C
12
VR (V)
16
f = 1 MHz; Tamb = 25 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3.
Reverse current as a function of reverse

Fig 4.
Diode capacitance as a function of reverse

BAS16_SER_5
Product data sheet
7 of 20
BAS16 series
NXP Semiconductors
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50
SAMPLING
OSCILLOSCOPE
V = VR + IF RS
trr
t
Ri = 50
(1)
90 %
VR
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms

I
450
1 k
RS = 50
90 %
OSCILLOSCOPE
D.U.T.
VFR
Ri = 50
10 %
t
tp
tr
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
9. Package outline
3.0
2.8
1.7
1.5
1.1
0.9
1.2
1.0
1
0.55
0.35
0.45
0.15
2.5 1.4
2.1 1.2
3.6
3.4
1.9
Dimensions in mm
Fig 7.
0.48
0.38
0.15
0.09
04-11-04
Package outline BAS16 (SOT23/TO-236AB)
0.70
0.55
0.25
0.10
Dimensions in mm
Fig 8.
04-11-29
Package outline BAS16H (SOD123F)
BAS16_SER_5
Product data sheet
2.7
2.5
8 of 20
BAS16 series
NXP Semiconductors
1.35
1.15
0.80
0.65
1
0.30
0.22
2.7
2.3
0.50
0.46
0.62
0.55
0.5
0.3
1.8
1.6
1.02
0.95
0.65
0.30
0.22
Dimensions in mm
Fig 9.
0.55
0.47
0.25
0.10
0.40
0.25
04-09-13
Package outline BAS16J (SOD323F/SC-90)
Dimensions in mm
03-04-17
Fig 10. Package outline BAS16L (SOD882)

1.7
1.5
0.95
0.60
1.8
1.4
3
cathode marking on top side
0.45
0.15
0.6
0.5
5
4
0.3
0.1
1.75 0.9
1.45 0.7
1.7
1.5
1.3
1.1
pin 1 index
1
0.30
0.15
0.25
0.10
1
04-11-04
Fig 11. Package outline BAS16T (SOT416/SC-75)

2.2
1.8
2.2 1.35
2.0 1.15
Fig 12. Package outline BAS16VV (SOT666)
0.45
0.15
1.1
0.8
0.45
0.15
2.2 1.35
2.0 1.15
3
0.3
0.2
2
0.4
0.3
0.25
0.10
Dimensions in mm
Fig 13. Package outline BAS16VY (SOT363)
0.25
0.10
1.3
1.3
06-03-16
Dimensions in mm
04-11-04
Fig 14. Package outline BAS16W (SOT323/SC-70)
BAS16_SER_5
Product data sheet
04-11-08
2.2
1.8
pin 1
index
0.65
0.18
0.08
0.27
0.17
Dimensions in mm
1.1
0.8
5
Dimensions in mm
0.5
9 of 20
BAS16 series
NXP Semiconductors
1.35
1.15
0.65
0.58
0.45
0.15
2.7
2.3
0.85
0.75
1.1
0.8
1.65 1.25
1.55 1.15
1.8
1.6
2
0.40
0.25
0.25
0.10
Dimensions in mm
0.34
0.26
03-12-17
Fig 15. Package outline BAS316 (SOD323/SC-76)
0.17
0.11
Dimensions in mm
02-12-13
Fig 16. Package outline BAS516 (SOD523/SC-79)
10. Packing information

Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
4000
8000
10000
BAS16
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
BAS16H
SOD123F
-115
-135
BAS16J
SOD323F
-115
-135
BAS16L
SOD882
-315
BAS16T
SOT416
-115
-135
BAS16VV
SOT666
-315
-115
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
BAS16VY
SOT363
BAS16W
SOT323
-115
-135
BAS316
SOD323
-115
-135
BAS516
SOD523
-315
-115
-135
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
BAS16_SER_5
Product data sheet
10 of 20
BAS16 series
NXP Semiconductors
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
1.7
solder paste
occupied area
0.6
(3)
0.7
(3)
Dimensions in mm
0.5
(3)
0.6
(3)
1
sot023_fr
Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)

2.2
1.2
(2)
1.4
(2)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering

2.8
4.5
sot023_fw
Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)
BAS16_SER_5
Product data sheet
11 of 20
BAS16 series
NXP Semiconductors
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2)

Dimensions in mm
Fig 19. Reflow soldering footprint BAS16H (SOD123F)

3.05
2.2
2.1
solder lands
solder resist
0.5 (2)
1.65 0.95
0.6 (2)
solder paste
occupied area
0.5
(2)
0.6
(2)
Dimensions in mm
sod323f_fr
Fig 20. Reflow soldering footprint BAS16J (SOD323F)
BAS16_SER_5
Product data sheet
12 of 20
BAS16 series
NXP Semiconductors
1.3
R0.05 (8)
0.7
solder lands
solder resist
0.6 0.7
(2) (2)
0.9
solder paste
occupied area
0.3
(2)
Dimensions in mm
0.4
(2)
sod882_fr
Fig 21. Reflow soldering footprint BAS16L (SOD882)

2.2
1.7
solder lands
solder resist
1
0.85
2
solder paste
0.5
(3)
occupied area
Dimensions in mm
0.6
(3)
1.3
sot416_fr
Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)
BAS16_SER_5
Product data sheet
13 of 20
BAS16 series
NXP Semiconductors
2.75
2.45
2.1
1.6
solder lands
0.4
(6) 0.25
(2)
0.538
2
1.7 1.075
0.3
(2)
placement area
0.55
(2)
solder paste
occupied area
0.325 0.375
(4) (4)
Dimensions in mm
1.7
0.45
(4)
0.6
(2)
0.5
(4)
0.65
(2)
sot666_fr
Fig 23. Reflow soldering footprint BAS16VV (SOT666)

2.65
solder lands
2.35 1.5
0.4 (2)
0.6 0.5
(4) (4)
solder resist
solder paste
0.5
(4)
0.6
(2)
0.6
(4)
occupied area
Dimensions in mm
1.8
sot363_fr
Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)
BAS16_SER_5
Product data sheet
14 of 20
BAS16 series
NXP Semiconductors
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
preferred transport
direction during soldering
1.3
2.45
5.3
sot363_fw
Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)

2.65
1.85
1.325
solder lands
solder resist
2.35
0.6
(3)
1.3
0.5
(3)
solder paste
occupied area
Dimensions in mm
0.55
(3)
sot323_fr
Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)
BAS16_SER_5
Product data sheet
15 of 20
BAS16 series
NXP Semiconductors
4.6
2.575
1.425
(3)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2)
Dimensions in mm
preferred transport
sot323_fw
Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)

3.05
2.1
solder lands
solder resist
0.5 (2)
1.65 0.95
0.6 (2)
solder paste
occupied area
2.2
0.5
(2)
0.6
(2)
Dimensions in mm
sod323_fr
Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76)
BAS16_SER_5
Product data sheet
16 of 20
BAS16 series
NXP Semiconductors
5
2.9
1.5 (2)
solder lands
solder resist
occupied area
1.2
2.75
(2)
Dimensions in mm
preferred transport
sod323_fw
Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)

2.15
1.1
solder lands
solder resist
0.5 0.6
(2) (2)
1.2
solder paste
occupied area
0.7
(2)
0.8
(2)
Dimensions in mm
sod523_fr
Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79)
BAS16_SER_5
Product data sheet
17 of 20
BAS16 series
NXP Semiconductors
12. Revision history

Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS16_SER_5
20080825
Product data sheet
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
Modifications:
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5 Marking codes: marking code amended for BAS16W
Table 6 Limiting values: for BAS16, BAS16T, BAS16W and BAS516 change of
VRRM maximum value from 85 V to 100 V
Table 6 Limiting values: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of
VR maximum value from 75 V to 100 V
Table 8 Characteristics: change of IR condition VR from 75 V to 80 V for Tj = 25 C
Table 8 Characteristics: change of IR maximum value from 1.0 A to 0.5 A for VR = 80 V

and Tj = 25 C
Table 8 Characteristics: change of IR condition VR from 75 V to 80 V for Tj = 150 C
Section 13 Legal information: updated
BAS16_4
20011010
Product specification
BAS16_3
BAS16H_1
20050415
Product data sheet
BAS16J_1
20070308
Product data sheet
BAS16L_1
20030623
BAS16T_1
19980120
BAS16VV_BAS16VY_3
20070420
Product data sheet
BAS16VV_BAS16VY_2
BAS16W_4
19990506
BAS16W_3
BAS316_4
20040204
BAS316_3
BAS516_1
19980831
BAS16_SER_5
Product data sheet
18 of 20
BAS16 series
NXP Semiconductors
13. Legal information

13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term short data sheet is explained in section Definitions.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customers own risk.
Applications Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS16_SER_5
Product data sheet
19 of 20
BAS16 series
NXP Semiconductors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.
NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2008
Document identifier: BAS16_SER_5

Diodos Bas316 16 516

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Diodos Bas316 16 516

Uploaded by

Copyright:

Available Formats

BAS16 series

High-speed switching diodes

Product data sheet

small and flat lead

very small and flat

ultra small and flat

ultra small and flat

High-speed switching diodes

1.4 Quick reference data

Quick reference data

reverse recovery time

When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.

BAS16; BAS16T; BAS16W

BAS16H; BAS16J; BAS316; BAS516

The marking bar indicates the cathode.

Product data sheet

NXP B.V. 2008. All rights reserved.

Rev. 05 25 August 2008

High-speed switching diodes

plastic surface-mounted package; 3 leads

plastic surface-mounted package; 2 leads

plastic surface-mounted package; 2 leads

leadless ultra small plastic package; 2 terminals;

plastic surface-mounted package; 3 leads

plastic surface-mounted package; 6 leads

plastic surface-mounted package; 6 leads

plastic surface-mounted package; 3 leads

plastic surface-mounted package; 2 leads

plastic surface-mounted package; 2 leads

* = -: made in Hong Kong

Product data sheet

NXP B.V. 2008. All rights reserved.

Rev. 05 25 August 2008

High-speed switching diodes

repetitive peak reverse

repetitive peak forward

non-repetitive peak forward

total power dissipation

Product data sheet

NXP B.V. 2008. All rights reserved.

Rev. 05 25 August 2008

High-speed switching diodes

Device mounted on an FR4 PCB with 60 m copper strip line.

Single diode loaded.

Reflow soldering is the only recommended soldering method.

Soldering point of cathode tab.

Soldering points at pins 4, 5 and 6.

thermal resistance from

thermal resistance from

Product data sheet

NXP B.V. 2008. All rights reserved.

Rev. 05 25 August 2008

High-speed switching diodes

Thermal characteristics continued

thermal resistance from

Device mounted on an FR4 PCB with 60 m copper strip line.

Reflow soldering is the only recommended soldering method.

Single diode loaded.

Soldering point of cathode tab.

Soldering points at pins 4, 5 and 6.

reverse recovery time

forward recovery voltage

Pulse test: tp 300 s; 0.02.

When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.