BPV10

www.vishay.com

Vishay Semiconductors

Silicon PIN Photodiode

FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Leads with stand-off
Radiant sensitive area (in mm2): 0.78
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation

94 8390

High bandwidth: 250 MHz at VR = 12 V

Fast response times

DESCRIPTION

Angle of half sensitivity: = 20

BPV10 is a PIN photodiode with high speed and high radiant

sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.

Compliant to RoHS Directive 2002/95/EC and in

accordance with WEEE 2002/96/EC
Note
** Please see document Vishay Material Category Policy:
www.vishay.com/doc?99902

APPLICATIONS
High speed photo detector

PRODUCT SUMMARY
COMPONENT

Ira (A)

(deg)

0.1 (nm)

70

20

380 to 1100

PACKAGING

REMARKS

PACKAGE FORM

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1

BPV10
Note
Test condition see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE
BPV10
Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

Reverse voltage
Power dissipation

Tamb 25 C

Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient

Rev. 1.9, 22-Nov-11

SYMBOL

VALUE

VR

60

UNIT
V

PV

215

mW

Tj

100

Tamb

- 40 to + 100

C
C

Tstg

- 40 to + 100

t 5 s, 2 mm from body

Tsd

260

Connected with Cu wire, 0.14 mm2

RthJA

350

K/W

Document Number: 81502

1
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BPV10
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Vishay Semiconductors

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

IF = 50 mA

VF

IR = 100 A, E = 0

V(BR)

VR = 20 V, E = 0

Iro

Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current

Reverse light current

MIN.

TYP.

MAX.

UNIT

1.0

1.3

nA

60

VR = 0 V, f = 1 MHz, E = 0

CD

11

pF

VR = 5 V, f = 1 MHz, E = 0

CD

3.8

pF

EA = 1 klx

VO

480

mV

Ee = 1 mW/cm2, = 950 nm

VO

450

mV

EA = 1 klx

IK

80

Ee = 1 mW/cm2, = 950 nm

IK

65

85

70

EA = 1 klx, VR = 5 V

Ira

Ee = 1 mW/cm2, = 950 nm,

VR = 5 V

Ira

VR = 5 V, = 950 nm

Absolute spectral sensitivity

38

s()

0.55

A/W

Angle of half sensitivity

20

deg

Wavelength of peak sensitivity

920

nm

0.1

380 to 1100

nm

Range of spectral bandwidth

= 950 nm

72

Noise equivalent power

VR = 20 V, = 950 nm

NEP

3 x 10-14

W/Hz

Detectivity

VR = 20 V, = 950 nm

3 x 1012

cmHz/W

Rise time

VR = 50 V, RL = 50 , = 820 nm

tr

2.5

ns

Fall time

VR = 50 V, RL = 50 , = 820 nm

tf

2.5

ns

Quantum efficiency

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

Ira, rel - Relative Reverse Light Current

Iro - Reverse Dark Current (nA)

1000

100

10

VR = 20 V
1
20

94 8436

40

60

80

Tamb - Ambient Temperature (C)

VR = 5 V
= 950 nm

1.2

1.0

0.8

0.6
0

100

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Rev. 1.9, 22-Nov-11

1.4

94 8416

20

40

60

80

100

Tamb - Ambient Temperature (C)

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

Document Number: 81502

2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPV10
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Vishay Semiconductors

S ( )rel - Relative Spectral Sensitivity

100

10

VR = 5 V
= 950 nm

0.1

Ira - Reverse Light Current (A)

0.6
0.4
0.2
0
350

550

750

1150

950

- Wavelength (nm)

94 8440

Fig. 3 - Reverse Light Current vs. Irradiance

100

0.8

10

E e - Irradiance (mW/cm 2)

94 8437

1.0

Fig. 6 - Relative Spectral Sensitivity vs. Wavelength

10

20
30

1 mW/cm2
0.5 mW/cm2

= 950 nm

0.2 mW/cm2
10

0.1 mW/cm2
0.05 mW/cm2

40
1.0
0.9

50

0.8

60
70

0.7

0.02 mW/cm

- Angular Displacement

0.1
0.01

Srel - Relative Sensitivity

Ira - Reverse Light Current (A)

1000

80

1
0.1

100

10

0.6

0.4

0.2

94 8624

VR - Reverse Voltage (V)

94 8438

Fig. 4 - Reverse Light Current vs. Reverse Voltage

Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement

CD - Diode Capacitance (pF)

12
10
E=0
f = 1 MHz

8
6
4
2
0
0.1

94 8439

10

100

VR - Reverse Voltage (V)

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Rev. 1.9, 22-Nov-11

Document Number: 81502

3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPV10
www.vishay.com

Vishay Semiconductors

5.75

0.15

PACKAGE DIMENSIONS in millimeters

0.15

Chip position

R 2.45 (sphere)

0.15

7.6

0.3

8.6

+ 0.2
- 0.1

+ 0.2
- 0.1

0.63

+ 0.2
- 0.1

Area not plane

0.5

+ 0.15

1.5

0.25

0.8

< 0.7

34.8

0.5

11.8

0.3

(4.3)

2.54 nom.

Drawing-No.: 6.544-5185.02-4

technical drawings
according to DIN
specifications

Issue:1; 01.07.96
96 12199

Rev. 1.9, 22-Nov-11

Document Number: 81502

4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

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Vishay

Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
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including but not limited to the warranty expressed therein.
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000