FQD2N60C / FQU2N60C: N-Channel Qfet Mosfet

FQD2N60C / FQU2N60C
N-Channel QFET MOSFET
600 V, 1.9 A, 4.7

Features
Description
1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V,
This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
ID = 0.95 A
Low Gate Charge (Typ. 8.5 nC)
Low Crss (Typ. 4.3 pF)
100% Avalanche Tested
RoHS Compliant
D
!
G
S
G!
I-PAK
D-PAK
Absolute Maximum Ratings

Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
IDM
Drain Current
FQD2N60C / FQU2N60C
Unit
600
- Continuous (TC = 25C)
1.9
- Continuous (TC = 100C)
1.14
- Pulsed
(Note 1)
7.6
30
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
1.9
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25C)*
2.5
Power Dissipation (TC = 25C)

- Derate above 25C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds
44
0.35
W/C
-55 to +150
300
Thermal Characteristics
Symbol
FQD2N60C / FQU2N60C
Parameter
RJC
Thermal Resistance, Junction-to-Case, Max.
RJA
RJA
Unit
2.87
C/W
Thermal Resistance, Junction-to-Ambient*
50
C/W
Thermal Resistance, Junction-to-Ambient, Max.
110
C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2009 Fairchild Semiconductor Corporation

FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET MOSFET
April 2013
Device Marking
Device
Package
Reel Size
Tape Width
FQD2N60C
FQD2N60C
D-PAK
FDU2N60C
FDU2N60C
I-PAK
Electrical Characteristics
Symbol
Quantity
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
600
--
--
BVDSS/
TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.6
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
VDS = 480 V, TC = 125C
--
--
10
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
2.0
--
4.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.95 A
--
3.6
4.7
gFS
Forward Transconductance
VDS = 40 V, ID = 0.95 A
--
5.0
--
--
180
235
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
20
25
pF
--
4.3
5.6
pF
--
28
ns
--
25
60
ns
--
24
58
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 2 A,
VGS = 10 V
(Note 4, 5)
--
28
66
ns
--
8.5
12
nC
--
1.3
--
nC
--
4.1
--
nC
--
--
1.9
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
7.6
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.9 A
--
--
1.4
trr
Reverse Recovery Time
230
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/s
--
Qrr
--
1.0
--
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics

1
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
ID, Drain Current [A]
Top :
-1
10
150 C
o
-55 C
10
25 C
Notes :
1. 250 s Pulse Test
2. TC = 25
Notes :
1. VDS = 40V
2. 250 s Pulse Test
-1
-2
10
-1
10
10
10
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
10
IDR, Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
12
VGS = 10V
VGS = 20V
2
10
150
Notes :
1. VGS = 0V
2. 250 s Pulse Test
25
Note : TJ = 25
-1
10
0
0.2
0.4
Figure 5. Capacitance Characteristics

500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Ciss
300
Coss
200
Notes ;
1. VGS = 0 V
2. f = 1 MHz
150
Crss
100
1.4
VDS = 300V
8
VDS = 480V
50
0
-1
10
1.2
VDS = 120V
10
250
1.0
12
400
350
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
450
0.6
VSD, Source-Drain voltage [V]
Note : ID = 2A
0
10
10

10
QG, Total Gate Charge [nC]
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
150
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 0.95 A
0.5
0.0
-100
200
-50
TJ, Junction Temperature [ C]
50
100
150
200
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current

vs. Case Temperature
2.0
Operation in This Area

is Limited by R DS(on)
10
1.6
100 s
1 ms
0
10
10 ms
100 ms
DC
-1
10
Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
10
0.8
0.4
-2
10
1.2
0.0
25
10
10
50
75
Z JC(t), Thermal Response
Figure 11. Typical Drain Current Slope

vs. Gate Resistance
125
150
Figure 12. Typical Drain-Source Voltage

Slope vs. Gate Resistance
D = 0 .5
10
100
TC, Case Temperature []
N o te s :
1 . Z J C ( t) = 2 .8 7 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
0 .0 1
-1
t1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Typical Performance Characteristics (Continued)
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp

VDS (t)
VDD
DUT
10V
ID (t)
tp
Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop

Mechanical Dimensions
D-PAK
Dimensions in Millimeters

Mechanical Dimensions
I-PAK
Dimensions in Millimeters

tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FQD2N60C / FQU2N60C: N-Channel Qfet Mosfet

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FQD2N60C / FQU2N60C: N-Channel Qfet Mosfet

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FQD2N60C / FQU2N60C

N-Channel QFET MOSFET

600 V, 1.9 A, 4.7

1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V,

This N-Channel enhancement mode power MOSFET is

Absolute Maximum Ratings

- Continuous (TC = 25C)

- Continuous (TC = 100C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TA = 25C)*

Power Dissipation (TC = 25C)

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient, Max.

* When mounted on the minimum pad size recommended (PCB Mount)

2009 Fairchild Semiconductor Corporation

FQD2N60C / FQU2N60C N-Channel QFET MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V

VDS = 480 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2009 Fairchild Semiconductor Corporation

FQD2N60C / FQU2N60C N-Channel QFET MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

IDR, Reverse Drain Current [A]

Figure 5. Capacitance Characteristics

VGS, Gate-Source Voltage [V]

Figure 6. Gate Charge Characteristics

Ciss = Cgs + Cgd (Cds = shorted)

VSD, Source-Drain voltage [V]

ID, Drain Current [A]