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Technology Scaling
Source: www.intel.com
G. Moore, IEDM75
R. Chau, ICSICT04
35
3.5
3
2.5
Precision Analog V
Analog
VDD
DD
Digital V
Digital
VDD
1.5
DD
1
0.5
0
250
Threshold Voltages
Threshold
Vth
200
150
100
Technology node [nm]
50
K. Bult, ISSCC98
-2-
Variability
SCE,
Leakage
Well Proximity
Effect, STI
Stress
High
Integration
TxACE Symposium, 11/15/10
Complexity
Old days:
SPICE
Magic/L-Edit
DRC rules
Today:
T
d
PDK
Cadence,
Synopsys,
y p y ,
Mentor
HSPICE,
SpectreRF,
AMS ADS
AMS,
ADS
Long sim time,
substrate noise,
crosstalk
-3-
Practicality
Solutions:
Digital
g
correction,, aka
digital calibration,
digital assistance,
digital enhancement,
etc
etc.
Alternative architecture
Dynamic amplifier
CT DSP
Problems:
Robustness, e.g.,
CMRR, PSRR
Adaptation time
Practical concerns and
adoption by industry
-4-
ADC
-5-
Vo
Active-Cascode
Op Amp
Pseudo-Diff. Inverters
-6-
VFS/4
VFS/4
Vout
Vout
-VFS/4
-VFS/4
Vin
TxACE Symposium, 11/15/10
Vin
-7-
ADC
w/ 9th-order polynomial
-75 dBFS
LDrawn
0.15m
VDD
1 2V
1.2V
-8-
-9-
Vin
Ref. ADC
ADC
d(n)
x(n)
DSP
y(n)
e(n)
PRBS B
Based
d
(Dither)
Vin
PRBS( )
PRBS(n)
ADC
x(n)
DSP
y(n)
e(n)
T
Temes
(1996),
(1996) Lewis
L i (1998)
(1998), G
Galton
lt (2000)
(2000), ett al.
l
TxACE Symposium, 11/15/10
- 10 -
- 11 -
2006 ITRS
2009 ITRS
O ADCs
Our
ADC
CICC08
ISSCC04
10
VLSI06
ISSCC09
10
-1
ISSCC10
10
Unpubd
Our ADCs
Year
FoM
[fJ/step]
ISSCC04
1680
VLSI06
834
CICC08
5870
ISSCC09
210
ISSCC10
45.6
Unpubd
37.8
-2
2
2005
2008
2011
Year
2014
2017
- 12 -
# of S
Samples
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
104:1
~4N
1.E+05
1.E+04
6(?)
( )
1.E+03
11
12
13
14
15
16
17
Author
Sample SFDR
XXX
134M
90dB
XXX
40M
80dB
XXX
268M
93dB
XXX
225M
96dB
XXX
400M
98dB
XXX
10k
Ours
22k
95dB
SFDR Bits
- 13 -
- 14 -
- 15 -
- 16 -
Digital
Ref.
ADC Dr
ISSCC09
46th ISSCC/DAC SDC Award
r
ADC1
Vin
T/H
1X
D1
ADF1
DLL
1
10
ADC10
D10
ADF10
0.13-um CMOS
AA: 1.01.1 mm2
10
All paths
th are aligned
li
d to
t the
th unique
i
ref.
f ADC after
ft equalization
li ti
TxACE Symposium, 11/15/10
- 17 -
Before Calibration
-10
10
SNDR=31.2dB
SFDR 33 0dB
SFDR=33.0dB
0
-10
10
After Calibration
SNDR=46.7dB
SFDR 65 2dB
SFDR=65.2dB
0
-10
10
-20
-20
-20
-30
-30
-30
-40
-40
-40
-50
-50
-50
-60
-60
-60
-70
-70
-70
-80
-80
-80
-90
0
-90
0
-90
0
Reference ADC
SNDR=42.2dB
SFDR 60 5dB
SFDR=60.5dB
- 19 -
- 20 -
- 21 -
SNDR = 60.2 dB
SFDR = 66.4 dB
THD = -61.7 dB
-20
-20
-40
-40
Aft C
After
Cal.
l
-60
dB
dB
B f
Before
C
Cal.
l
-60
-80
-80
-100
-100
-120
0
SNDR = 70.7 dB
SFDR = 94.6 dB
THD = -89.1 dB
5
Freq [MHz]
-120
0
10
- 22 -
5
Freq [MHz]
10
Convergence Speed
e [LSB]
10
5
0
-5
0
3
4
Number for samples
3
4
Number for samples
3
4
Number for samples
x 10
10
e [LSB
B]
6
4
5
0
-5
0
6
x 10
e [LSB]
10
5
0
-5
0
22000 samples @ 22
22.5
5 MS/s 1 millisecond
TxACE Symposium, 11/15/10
- 23 -
6
x 10
10
10
-1
10
10
2
10
2000
2002
2004
2006
2008
2010
Year
10
10
-1
10
0.06 mm2
-2
10
2000
2002
2004
2006
2008
2010
Year
- 24 -
RF Transmitter Equalization
Nonlinear RF Transmitter
Digital Processing
TxACE Symposium, 11/15/10
RF TX Distortion Mechanism
- 26 -
TX
Data
Complex Multiplier
To DAC
I
2-D ML-LUT
Integer
Delay
1-z
Fractional
Delay
Ip + jQp
-2
I+ jQ
LMS
Update
Coarse
Rotation
From
ADC
= A p r + jBp r
N
k=0
- 27 -
A p (r)
( ) + jBp (r)
( ) = Ck 2k r
2.5 V
Power Gain
25
15
20
Chip
Boundary
bondwires
To
T
Balun
M7
From
Mixer
M8
M4
10
5
0
0
-5
5
M5
M1
10
thick-oxide
M3
Pout
15
M6
-10
-20
M2
-15
-10
-5
-5
10
Pin [dBm]
60
50
2nd-harmonic
termination
40
30
3.5-GHz
3 5 GHz two
two-stage
stage Class
Class-B
B PA
20
10
-5
5
10
15
20
25
Pout [dBm]
TxACE Symposium, 11/15/10
- 28 -
1.7 mm
CICC09
2.7 mm
- 29 -
Experimental Setup
- 30 -
After EQ
64-QAM OFDM, PAPR = 9.6 dB, bandwidth = 20 MHz, data rate = 54 Mbps
- 31 -
EQ:
2-D 4-level LUT
DAC/ADC:
80-MS/s, 10-bit
LPF:
35-MHz cut-off
- 32 -
- 33 -
Conclusion
- 34 -
Acknowledgements
Intel Corp.
Analog Devices
Agilent Technology
ITRI, Taiwan
Marvell Semiconductor
- 35 -