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Data Sheet
Revision 1.0, 2012-08-03
Edition 2012-08-03
Published by
Infineon Technologies AG
81726 Munich, Germany
2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP842ESD
Data Sheet
BFP842ESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
11
11
11
12
15
18
BFP842ESD
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 5-20
Figure 5-21
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Data Sheet
10
12
15
15
16
16
17
18
18
19
19
20
20
21
21
22
22
23
23
24
24
25
27
27
27
27
BFP842ESD
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Data Sheet
BFP842ESD
Product Brief
Product Brief
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5
GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.
The BFP842ESD provides inherently good input power match as well as inherently good noise match between
2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the
input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the
application. Integrated protection elements at in- and output make the device robust against ESD and excessive
RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry
standard package with visible leads.
Data Sheet
BFP842ESD
Features
Features
Robust very low noise amplifier based on Infineons reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness:
16 dBm maximum RF input power, 1 kV HBM ESD hardness
High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
High transition frequency fT = 60 GHz enables very low noise
figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V
(3.3 V, 3.6 V requires corresponding collector resistor)
Low power consumption, ideal for mobile applications
Easy to use Pb free (RoHS compliant) and halogen free industry standard
package with visible leads
Applications
As very low noise amplifier (LNA) in
Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo)
Satellite radio (SDARs, DAB and C-band LNB)
and C-band LNB (1st and 2nd stage LNA)
Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee
Package
BFP842ESD
SOT343
Data Sheet
Pin Configuration
1=B
2=E
3=C
Marking
4=E
T9s
BFP842ESD
Maximum Ratings
Maximum Ratings
Table 3-1
Parameter
Symbol
VCEO
Values
Min.
Max.
3.25
2.9
Unit
TA = 25C
TA = -40C
Open base
1)
VCES
3.25
2.9
TA = 25C
TA = -40C
E-B short circuited
2)
VCBO
4.1
3.5
TA = 25C
TA = -40C
Open emitter
Base current
IB
-5
mA
Collector current
IC
40
mA
RF input power
PRFin
16
dBm
VESD
-1
kV
Ptot
120
mW
TS 111C
Junction temperature
TJ
150
Storage temperature
TStg
-55
150
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
BFP842ESD
Thermal Characteristics
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
1)
140
120
tot
[mW]
100
80
60
40
20
0
25
50
75
T [C]
S
100
125
150
Data Sheet
10
BFP842ESD
Electrical Characteristics
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 C
Parameter
Symbol
V(BR)CEO
Values
Min.
Typ.
3.25
3.7
Unit
IC = 1 mA , IB = 0
Max.
Open base
ICES
400
nA
VCE = 2 V, VBE = 0
E-B short circuited
ICBO
400
nA
VCB = 2V, IE = 0
Open emitter
IEBO
10
VEB = 0.5 V, IC = 0
Open collector
DC current gain
hFE
150
260
VCE = 2.5 V, IC = 15 mA
450
Pulse measured
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 C
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Transition frequency
fT
57
GHz
VCE = 2.5 V, IC = 25 mA
f = 1 GHz
CCB
64
fF
VCB = 2 V, VBE = 0
f = 1 MHz
Emitter grounded
CCE
0.46
pF
VCE = 2 V, VBE= 0
f = 1 MHz
Base grounded
CEB
0.44
pF
VEB = 0.4V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
BFP842ESD
Electrical Characteristics
5.3
VC
Top View
Bias -T
OUT
E
VB
Bias-T
(Pin 1)
IN
Table 5-3
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
33
29.5
NFmin
Gass
0.4
26
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
6.5
22
Data Sheet
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
12
ZS = ZL = 50
IC = 15 mA
IC = 15 mA
BFP842ESD
Electrical Characteristics
Table 5-4
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
29
26
NFmin
Gass
0.45
24
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
7
22.5
Table 5-5
dB
Symbol
Values
Min.
Typ.
Max.
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50
IC = 15 mA
IC = 15 mA
Unit
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
25.5
23
NFmin
Gass
0.45
21
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
7.5
23.5
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50
IC = 15 mA
IC = 15 mA
Unit
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
23.5
21
NFmin
Gass
0.5
19.5
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 15 mA
IC = 15 mA
Parameter
Table 5-6
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
OP1dB
OIP3
8
24.5
13
ZS = ZL = 50
IC = 15 mA
IC = 15 mA
BFP842ESD
Electrical Characteristics
Table 5-7
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
22
19
NFmin
Gass
0.5
18
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
8
25
Table 5-8
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50
IC = 15 mA
IC = 15 mA
Unit
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
17.5
16
NFmin
Gass
0.65
15
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
8.5
25.5
Table 5-9
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50
IC = 15 mA
IC = 15 mA
Unit
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
12.5
11.5
NFmin
Gass
0.85
10.5
Linearity
1 dB compression point at output
3rd order intercept point at output
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
OP1dB
OIP3
8
24
ZS = ZL = 50
IC = 15 mA
IC = 15 mA
Notes
1. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 from 0.2 MHz to 12 GHz.
Data Sheet
14
BFP842ESD
Electrical Characteristics
5.4
Characteristic DC Diagrams
20
75A
18
65A
16
55A
14
45A
10
35A
25A
[mA]
12
6
15A
4
5A
2
0
0.5
1.5
V
CE
2.5
3.5
[V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE ), IB = Parameter
FE
10
10
2
10
10
10
[mA]
10
10
Data Sheet
15
BFP842ESD
Electrical Characteristics
10
10
10
IC [mA]
10
10
10
10
10
0.5
0.6
V
0.7
[V]
0.8
0.9
BE
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE ), VCE = 2.5 V
10
10
10
IB [mA]
10
10
10
10
10
0.5
0.6
V
0.7
[V]
0.8
0.9
BE
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE ), VCE = 2.5 V
Data Sheet
16
BFP842ESD
Electrical Characteristics
10
10
IB [A]
10
10
10
10
0.5
0.6
0.7
V
EB
0.8
[V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB ), VCE = 2.5 V
Data Sheet
17
BFP842ESD
Electrical Characteristics
5.5
Characteristic AC Diagrams
60
55
3.00V
50
45
40
30
f [GHz]
2.50V
35
25
20
2.00V
15
10
1.50V
1.00V
0.50V
5
0
10
15
20
IC [mA]
25
30
35
40
30
28
26
24
22
OIP3 [dBm]
20
18
16
2V, 2400MHz
2V, 3500MHz
2.5V, 2400MHz
2.5V, 3500MHz
14
12
10
8
6
4
2
0
10
15
I [mA]
20
25
30
Figure 5-8 3rd Order Intercept Point at output OIP3 = f ( IC), ZS = ZL = 50 , VCE, f = Parameter
Data Sheet
18
BFP842ESD
Electrical Characteristics
10
11
30
12
14 15 16 7 8
1 1 19
20
212
2
23
24
13
14 15 16 17 1819
20
212
2
6
7
8
9
2 13
10 11 1
20
26
25
22
2 13
11 1
10
15
25
23
24
8
14 15 16 17 1 19
20
21
I [mA]
25
16
17
18
19
20
23
26
24
4 5
10 1 1
21
25
22
1.5
24
23
2
VCE [V]
2.5
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f ( IC, VCE), ZS = ZL = 50 , f = 3.5 GHz
8
7
6
5
30
4 3 2
2
3
4
3
2
25
10
I [mA]
7
8
20
6
7
1
2
3
15
10
3
2
1
0
1
2
1
0
1
1.5
6
5
2
VCE [V]
2
1
0
2.5
Figure 5-10 Compression Point at output OP1dB [dBm] = f ( IC, VCE), ZS = ZL = 50 , f = 3.5 GHz
Data Sheet
19
BFP842ESD
Electrical Characteristics
0.085
0.08
0.07
CB
[pF]
0.075
0.065
0.06
0.055
0.5
1
V
CB
1.5
[V]
2.5
36
33
30
Gma
27
G [dB]
24
21
Gms
18
15
|S21|2
12
9
6
3
5
6
f [GHz]
10
Data Sheet
20
BFP842ESD
Electrical Characteristics
36
0.45GHz
33
30
0.90GHz
27
1.50GHz
Gmax [dB]
24
1.90GHz
21
2.40GHz
18
3.50GHz
15
12
5.50GHz
9
6
3
10
20
30
40
50
IC [mA]
Figure 5-13 Maximum Power Gain Gmax = f ( IC ), VCE = 2.5 V, f = Parameter in GHz
36
33
0.45GHz
30
0.90GHz
27
1.50GHz
1.90GHz
2.40GHz
max
[dB]
24
21
18
3.50GHz
15
5.50GHz
12
9
6
3
0.5
1.5
2
V
CE
2.5
3.5
[V]
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
Data Sheet
21
BFP842ESD
Electrical Characteristics
1
1.5
0.5
0.4
3
0.3
4
0.2
0.03 to 10 GHz
0.1
10
10.0
10.0
0.1
9.0
1 7.0 1.5
5.0 7.0
9.0
4.0
0.1
4 5
5.0
4.0
3.0
2.0
0.03
10
1.0
3.0
0.2
5
4
2.0
1.0
0.3
3
0.4
0.5
2
1.5
5 mA
15 mA
1
1.5
0.5
0.4
3
0.3
4
0.2
5
3.5
4.0
2.4
1.9
5.0
0.1
0.1
10
1.5
5.5
6.0
2.4
3.5
1.50.9
5.5
0.9
3
0.5
4 5
0.9
5.5
0.1
10
0.2
5
4
0.3
3
0.4
0.5
2
1.5
1
5 mA
10 mA
15 mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f ), VCE = 2.5 V, IC = 5 / 10 / 15 mA
Data Sheet
22
BFP842ESD
Electrical Characteristics
[dB]
10
11
15mA
15
5mA
20
25
5
6
f [GHz]
10
1
1.5
0.5
0.4
3
0.3
10.0
4
0.2
5
9.0
0.03 to 10 GHz
0.1
10
0.1
8.0
1.5
4 5
0.03
0.03
7.0
0.1
10
1.0
6.0
0.2
5.0
4.0
0.3
1.0
3.0
2.0
0.4
0.5
2
1.5
1
5 mA
15 mA
Data Sheet
23
BFP842ESD
Electrical Characteristics
1.4
1.2
15mA
10mA
5mA
0.8
NF
min
[dB]
0.6
0.4
0.2
0
f [GHz]
1.4
1.2
5.5GHz
3.5GHz
2.4GHz
0.9GHz
0.8
NF
min
[dB]
0.6
0.4
0.2
0
10
12 14
I [mA]
16
18
20
22
24
Figure 5-20 Noise Figure NFmin = f ( IC ), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz
Data Sheet
24
BFP842ESD
Electrical Characteristics
2
1.8
1.6
NF
50
[dB]
1.4
1.2
5.5GHz
3.5GHz
2.4GHz
0.9GHz
0.8
0.6
0.4
0.2
0
10
12 14
I [mA]
16
18
20
22
24
Figure 5-21 Noise Figure NF50 = f (IC ), VCE = 2.5 V, ZS = 50 , f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 C
Data Sheet
25
BFP842ESD
Simulation Data
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP842ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP842ESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
26
BFP842ESD
0.9 0.1
2 0.2
0.1 MAX.
1.3
0.1
A
0.1 MIN.
0.15
1.25 0.1
2.1 0.1
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1 M
0.2 M A
SOT343-PO V08
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
XY s
96
Manufacturer
2009, June
Date Code(YM)
Marking
Pin 1
0.2
2.3
Pin 1
2.15
1.1
SOT323-TP V02
27
w w w . i n f i n e o n . c o m