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Optics Communications
journal homepage: www.elsevier.com/locate/optcom
Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey
Department of Materials Science and Engineering, Faculty of Engineering, Anadolu University, 26470 Eskiehir, Turkey
art ic l e i nf o
a b s t r a c t
Article history:
Received 1 November 2013
Received in revised form
22 July 2014
Accepted 23 July 2014
Available online 7 August 2014
In an attempt to use ultrafast pump probe spectroscopy technique with white light continuum to reveal
wavelength dependent dynamics of VO2, bandgap needs to be opened. Therefore, nanostructured
amorphous and crystalline VO2 thin lms were prepared with pulsed DC magnetron reactive sputtering.
The mean diameters of grains were measured as 227 0.1 nm and 44 7 0.1 nm for amorphous and
crystalline VO2 thin lms, respectively. Temperature dependent resistance measurements show that
nanocrystalline VO2 thin lm exhibit metal insulator phase transition. The lms exhibited dual band
gaps (2.3 eV, o 0.6 eV for amorphous lms and 1.3 eV, 1.8 eV for crystalline lm). Increased band gaps
made it possible to perform time resolved transmission and reection experiments with white light
continuum at uences above and below photo induced phase transition threshold. Although transmission chance due to photo induced phase transition of VO2 in the literature usually takes places at infrared
region of the spectrum, transmission chance was observed in visible as low as 630 nm in broadband
probe spectra. It was observed that measured time scales depend on not only pump uence but also
probe wavelength. Experiments gave the evidence of the long-lived lower energy non-equilibrium state
related to the photo induced phase.
& 2014 Elsevier B.V. All rights reserved.
Keywords:
Vanadium oxide
Ultrafast dynamics
Phase transition
White light continuum probe
1. Introduction
Vanadium dioxide (VO2) is one of the technologically signicant materials due to its ultrafast insulator to metal phase transition (MIT) property. VO2 is an insulator semiconductor at room
temperature. First order insulator to metal phase transition can be
induced either thermally, at 68 1C critical temperature or by laser
excitation [15]. Ultrafast light induced phase transition property
makes VO2 lms good candidates for optical applications such as
actuators, optical switches, thermochromic windows, and diffractive elements [611].
Although MIT of VO2 was discovered long ago [1], recent
progress in ultrafast time resolved techniques attracted attention
on light induced phase transition phenomena. Phase transition
dynamics of VO2 were investigated with time resolved optical [3],
terahertz [12], X-ray spectroscopic [13], and crystallographic [4,5]
measurements. These measurements revealed that due to ultrafast
photoexcitation of monoclinic VO2 insulator, ultrafast transition
http://dx.doi.org/10.1016/j.optcom.2014.07.064
0030-4018/& 2014 Elsevier B.V. All rights reserved.
110
chosen as 400 nm. Pulse duration inside pump probe experimental set up was measured as 100 fs via cross correlation of pump
and probe pulses. Although the response of reection and transmission pump probe experiments are connected, transmission
mode may show wavelength dependent excited state absorption
features more clearly. Therefore, pump probe measurements
were performed in reection and in transmission modes where
reected and transmitted probe beams were monitored with ber
optic spectrometer, respectively. According to our sign convention
positive sign of pump probe data (R/R) corresponds to decrease
in reection whereas negative sign corresponds to increase in
reection due to the effect of the pump beam in the reection
mode. In transmission mode, positive sign of pump probe data
(T/T) corresponds to nonlinear absorption (NA) whereas negative
sign of T/T corresponds to saturable absorption (SA).
2. Experiment
Fig. 1. AFM images of (a) as-deposited and (b) post-annealed lm taken in tapping mode in 1 1 mm2 areas.
although our sample mostly contains nanocrystalline VO2, nanoVOx with lower oxygen content may also exist in the lm.
The absorption spectra of the VO2 lms (Fig. 3a) shows that
depending on the oxygen supply at the deposition or annealing
process, vanadium may be in V0 (metallic), V2 , V3 , or V5 forms
[27]. Absorption spectrum of as-deposited sample is a typical
spectrum of V0 (metallic) state. On the other hand, shoulder around
320 nm shows that the annealed sample contains more VO2 as
observed in the literature [27]. Optical band gaps of the lms were
evaluated from the plot of (h)1/2 vs h shown in Fig. 3b. Both lms
show dual optical band gaps. Optical band gaps of as deposited lm
were calculated as Eas-dpt1 2.3 eV and Eas-dpt2 o0.6 eV. It is known
that band structure of a single crystal VO2 shows 0.6 eV and 2.3 eV
band gaps [28] corresponding V3dV3d intra band transition and
O2pV3d inter band transitions, respectively. In VO2, the vanadium
atoms are in 4 valance state, and therefore a single electron
resides in the d orbitals [28]. Since as-deposited sample is amorphous with nano-scale grains as shown in Fig. 1a, some oxygen
deciency can be expected due to imperfections and grain boundary
effects, and some V4 ions might be present in the lm as
interstitial ions. Accordingly, obtaining smaller band gap (Eas-dpt2
o0.6 eV) may be attributed to the localized states between V3dV3d
bands. On the other hand, two optical band gaps were calculated as
Eannealed1 1.3 eV and Eannealed2 1.8 eV for the annealed lm. Luo
et al. also measured two optical band gaps as 1.3 eV and 1.9 eV for
annealed vanadium oxide lms [29]. They concluded that larger
optical band gap is due to VO2 and the smaller band gap is due to
existence of occupied states bellow Fermi level resulting from the
111
Fig. 3. (a) Linear optical absorption spectra versus wavelength (b) Inset shows the graphs of (h)1/2 versus photon energy of lms.
112
Fig. 4. Normalized reection versus wavelengths at 4 mJ/cm2 pump energy for (a) amorphous,(b) crystalline lms at various delay times and (c) for both lms at zero and
3.1 ns delay times.
4. Conclusion
In conclusion, we have prepared nanostructured amorphous
VO2 thin lm by using pulsed DC magnetron reactive sputtering.
Post annealing under vacuum produced nanocrystalline VO2 thin
lm. Evaluation of band gap revealed that nanostructured crystalline VO2 lm has increased and dual band gaps around 1.3 eV and
1.8 eV. Due to increased band gap we were able to use pump probe
113
Fig. 5. Normalized transmission versus wavelength graphs of crystalline lm at various delay times for (a) 0.8 mJ/cm2, (b) 4 mJ/cm2, and (c) 8 mJ/cm2 input uences.
Fig. 6. Time evolution of the normalized transmission graphs of crystalline lm for (a) 460 nm, (b) 570 nm, and (c) 690 nm wavelengths.
Acknowledgments
This work is supported by the Scientic and Technological
Research Council of Turkey (TUBITAK, Project No: TBAG-111T351).
114
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