Data Sheet No.

PD 96936A

IRIS-A6351
Features

INTEGRATED SWITCHER

Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology.

Package Outline

Small temperature characteristics variation by adopting a comparator to

compensate for temperature on the control part.
Low start-up circuit current (50uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.

8 Lead PDIP

Built-in constant voltage drive circuit

Various kinds of protection functions

Key Specifications

Pulse-by-pulse Overcurrent Protection (OCP)

Overvoltage Protection with latch mode (OVP)

MOSFET

RDS(ON)

Type

VDSS(V)

MAX

IRIS-A6351

650

3.95

Thermal Shutdown with latch mode (TSD)

Pout(W)
ACinput(V)

Note 1

23015%

10

85 to 264

Note 1: The Pout(W) represents the thermal rating at PRC Operation, and the
peak power output is obtained by approximately 120 to 150% of the above
listed. When the output voltage is low and ON-duty is narrow, the Pout(W)
shall become lower than that of above.

Descriptions

IRIS-A6351 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type
SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC
realizes downsizing and standardizing of a power supply system reducing external components count and simplifying
the circuit designs. (Note). PRC is abbreviation of Pulse Ratio Control (On-width control with fixed OFF-time).

Typical Connection Diagram

IRIS-A6351
1

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IRIS-A6351
Absolute Maximum Ratings (Ta=25
) (Refer Gnd 2 and 5)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.

Symbol
IDpeak

Definition
Drain Current
*1

IDMAX

Maximum switching current *5

EAS
Vin
Vth
P D1
P D2
TF
Top
Tstg
Tch

Single pulse avalanche energy *2

Input voltage for control part
O.C.P/F.B Pin voltage
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature

Terminals Max. Ratings

8
2.36

Units
A

2.36

8-1
3-2
4-2
8-1

56
35
6
1.35

mJ
V
V
W

3-2

0.14

-20 ~ +125
-20 ~ +125
-40 ~ +125
150

Note
Single Pulse
V1-2=0.82V
Ta=-20~+125
Single Pulse
VDD=99V,L=20mH
IL=2.36A

*6
Specified by
VinIin
Refer to recommended
operating temperature

*1 Refer to MOS FET A.S.O curve

*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve

Fig.1
V1-2

*4 Refer to TF-PD2 curve for Control IC (See page 5)

*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive
voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop
occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by
V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm15mm)

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IRIS-A6351

Electrical Characteristics (for Control IC)

Electrical characteristics for control part (Ta=25, Vin=20V,unless otherwise specified)

Symbol
Vin(ON)
Vin(OFF)
Iin(ON)
Iin(OFF)
TOFF(MAX)
Vth
IOCP/FB
Vin(OVP)

Ratings
TYP
17.6
10.1
15
0.76
0.8
25.5

MIN
15.8
9.1
12
0.7
0.7
23.2

Definition
Operation start voltage
Operation stop voltage
*7
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
O.C.P/F.B Pin threshold voltage
O.C.P/F.B Pin extraction current
O.V.P operation voltage

Units
V
V
mA
A
sec
V
mA
V

MAX
19.4
11.1
5
50
18
0.82
0.9
27.8

Test
Conditions
Vin=019.4V
Vin=19.49.1V

Vin=15V

Vin=027.8V
Vin=27.8

Iin(H)
Latch circuit sustaining current *8
Vin(La.OFF) Latch circuit release voltage *7,8
Tj(TSD) Thermal shutdown operating temperature

7.9
135

70
10.5
-

A
V

(Vin(OFF)-0.3)V
Vin=27.87.9V

*7 The relation of Vin(OFF)Vin(La.OFF) is applied for each product.

*8 The latch circuit means a circuit operated O.V.P and T.S.D.

Electrical Characteristics (for MOSFET)

(Ta=25) unless otherwise specified

Symbol

Definition

MIN

Ratings
TYP

MAX

Units

Test Conditions

650

V2- 1=0V(short)

300

V2- 1=0V(short)

3.95
250

nsec

ID=300A

VDSS

Drain-to-Source breakdown voltage

IDSS

Drain leakage current

VDS =650V
V3- 2 =10V

RDS(ON) On-resistance
tf
Switching time

ID=0.4A

Between channel and

ch-F

Thermal resistance

*9

52

/W

internal frame

*9 Internal frame temperature (TF) is measured at the root of the Pin 5.

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IRIS-A6351
IRIS-A6351
A.S.O. temperature derating coefficient curve

IRIS-A6351
MOSFET A.S.O. Curve
100

Single Pulse

80
Drain current
limit by ON
resistance

10
Drain Current ID[A]

A.S.O. temperature derating coefficient[%]

100

Ta=25C

60

40

1ms

0.1

20

0.1ms

ASO temperature derating

shall be made by obtaining
ASO Coefficient from the left
curve in your use.

0
0

20

40

60

80

100

0.01

120

Internal frame temperature TF [ ]

IRIS-A6351

100

1000

IRIS-A6351
Avalanche energy derating curve

Maximum Switching current derating curve

Ta= 20+125
3

100

EAS temperature derating coefficient [%]

Maximum Switchng Current IDMAX[A]

10

Drain-to-Source Voltage VDS[V]

80

60

40

20

0
0.8

0.9

1
V 1-2 [V]

1.1

1.2

25

50

75

100

Channel temperature Tch [

125

150

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IRIS-A6351
IRIS-A6351
MOSFET Ta-PD1 Curve

IRIS-A6351
TF-PD2 Curve for Control IC

1.6

0.16

PD2=0.14[W]
0.14

1.2

0.12
Power dissipation PD2[W]

1.4

1
0.8
0.6

0.1
0.08
0.06

0.4

0.04

0.2

0.02
0

0
0

20

40

60

80

100 120 140 160

Ambient temperature Ta[]

20
40
60
80 100 120
Internal frame temperature TF[]

140

IRIS-A6351
Transient thermal resistance curve
10
Transient thermal resistance ch-a[ /W]

Power dissipation PD1[W]

PD1=1.35[W]

0.1

0.01

10

100

1m

10m

100m

time t [sec]

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IRIS-A6351
Block Diagram
3 Vin

OVP
UVLO

REG

Latch

Delay

TSD

Internal Bias

REG

PWM
OSC

7,8
D

Latch

Drive

S Q
R

1
S
OCP

Comp.

Icont

OCP/FB
2,5
GND

Lead Assignments
Pin No.

Pin Assignment
(Top View)
Source

Drain

GND

Drain

Vin

N.C.

OCP/FB

GND

1
2
3

Symbol
S
GND
Vin

4
5
6
7,8

OCP/FB
GND
N.C.
D

Description
Source Pin
Ground Pin
Power supply Pin
Overcurrent / Feedback
Pin
Ground Pin
Drain Pin

Function
MOSFET source
Ground
Input of power supply for control circuit
Input of overcurrent detection
signal / constant voltage control signal
Ground
Not Connected
MOSFET drain

Other Functions
O.V.P. Overvoltage Protection Circuit
T.S.D. Thermal Shutdown Circuit

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IRIS-A6351

Case Outline

7 6

A6351

2 3

b
c

IR
4

a. Type Number
b. Lot Number
1st letterThe last digit of year
2nd letterMonth
(1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.)
3rd letterWeek
13 : Arabic numerals
c. Registration Number

Material of Pin : Cu
Treatment of Pin : Solder plating
Weight: Approx. 0.51g

Data and specifications subject to change without notice.

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