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Amplifier Distortion
From the previous tutorials we learnt that for a signal amplifier to operate correctly without any distortion to
the output signal, it requires some form of DC Bias on its Base or Gate terminal so that it can amplify the
input signal over its entire cycle with the bias "Q-point" set as near to the middle of the load line as
possible. This then gave us a "Class-A" type amplification configuration with the most common
arrangement being the "Common Emitter" for Bipolar transistors and the "Common Source" for unipolar
FET transistors.
We also learnt that the Power, Voltage or Current Gain, (amplification) provided by the amplifier is the ratio
of the peak output value to its peak input value (Output Input). However, if we incorrectly design our
amplifier circuit and set the biasing Q-point at the wrong position on the load line or apply too large an
input signal to the amplifier, the resultant output signal may not be an exact reproduction of the original
input signal waveform. In other words the amplifier will suffer from distortion. Consider the common emitter
amplifier circuit below.
2. The input signal may be too large, causing the amplifier to be limited by the supply voltage.
3. The amplification may not be linear over the entire frequency range of inputs.
This means then that during the amplification process of the signal waveform, some form of Amplifier
Distortion has occurred.
Amplifiers are basically designed to amplify small voltage input signals into much larger output signals and
this means that the output signal is constantly changing by some factor or valu, called gain, multiplied by
the input signal for all input frequencies. We saw previously that this multiplication factor is called the
Beta, value of the transistor.
Common emitter or even common source type transistor circuits work fine for small AC input signals but
suffer from one major disadvantage, the bias Q-point of a bipolar amplifier depends on the same Beta
value which may vary from transistors of the same type, ie. the Q-point for one transistor is not necessarily
the same as the Q-point for another transistor of the same type due to the inherent manufacturing
tolerances. If this occurs the amplifier may not be linear and Amplitude Distortion will result but careful
choice of the transistor and biasing components can minimise the effect of amplifier distortion.
Amplitude Distortion
Amplitude distortion occurs when the peak values of the frequency waveform are attenuated causing
distortion due to a shift in the Q-point and amplification may not take place over the whole signal cycle.
This non-linearity of the output waveform is shown below.
If the bias is correct the output waveform should look like that of the input waveform only bigger,
(amplified). If there is insufficient bias the output waveform will look like the one on the right with the
negative part of the output waveform "cut-off". If there is too much bias the output waveform will look like
Amplitude Distortion greatly reduces the efficiency of an amplifier circuit. These "flat tops" of the
distorted output waveform either due to incorrect biasing or over driving the input do not contribute
anything to the strength of the output signal at the desired frequency. Having said all that, some well
known guitarist and rock bands actually prefer that their distinctive sound is highly distorted or "overdriven"
by heavily clipping the output waveform to both the +ve and -ve power supply rails. Also, excessive
amounts of clipping can also produce an output which resembles a "square wave" shape which can then
be used in electronic or digital circuits.
We have seen that with a DC signal the level of gain of the amplifier can vary with signal amplitude, but as
well as Amplitude Distortion, other types of distortion can occur with AC signals in amplifier circuits, such
Frequency Distortion
Frequency Distortion occurs in a transistor amplifier when the level of amplification varies with
frequency. Many of the input signals that a practical amplifier will amplify consist of the required signal
waveform called the "Fundamental Frequency" plus a number of different frequencies called "Harmonics"
superimposed onto it. Normally, the amplitude of these harmonics are a fraction of the fundamental
amplitude and therefore have very little or no effect on the output waveform. However, the output
waveform can become distorted if these harmonic frequencies increase in amplitude with regards to the
fundamental frequency. For example, consider the waveform below:
In the example above, the input waveform consists a the fundamental frequency plus a second harmonic
signal. The resultant output waveform is shown on the right hand side. The frequency distortion occurs
when the fundamental frequency combines with the second harmonic to distort the output signal.
Harmonics are therefore multiples of the fundamental frequency and in our simple example a second
harmonic was used. Therefore, the frequency of the harmonic is 2 times the fundamental, 2 x or 2.
Then a third harmonic would be3, a fourth, 4, and so on. Frequency distortion due to harmonics is
always a possibility in amplifier circuits containing reactive elements such as capacitance or inductance.
Phase Distortion
Phase Distortion or Delay Distortion occurs in a non-linear transistor amplifier when there is a time
delay between the input signal and its appearance at the output. If we call the phase change between the
input and the output zero at the fundamental frequency, the resultant phase angle delay will be the
difference between the harmonic and the fundamental. This time delay will depend on the construction of
the amplifier and will increase progressively with frequency within the bandwidth of the amplifier. For
Any practical amplifier will have a combination of both "Frequency" and "Phase" distortion together with
amplitude distortion but in most applications such as in audio amplifiers or power amplifiers, unless the
distortion is excessive or severe it will not generally affect the operation of the system.
In the next tutorial about Amplifiers we will look at the Class A Amplifier. Class A amplifiers are the
most common type of amplifier output stage making them ideal for use in audio power amplifiers.
Goto Page: 1 2 3 4 5 6 7 8
The circuit obviously has Gain from the input (gate) to drain and from the
input (gate) to source. The Miller effect must be expected to cause the
capacitors CGD and CGS to have effects, do to the gain across their terminals,
that is modified by the gain.
Figure 1:
Figure 2:
Analyze the circuit for Zin which, as shown, will result in the "Z" of the total
capacitance Cin. From this it will be possible to determine the Miller Effect on
CGD.
Zin = Vin / iin iin + iGD - iGS = 0 iGS = Vin / (1/jCGS)
iGS = jCGSVin
Contents
[hide]
1 Theory
2 Example: operational amplifiers
3 See also
4 External links
Theory [edit]
Ideally, a differential amplifier takes the voltages,
and
where
As differential gain should exceed common-mode gain, this will be a positive number,
and the higher the better.
The CMRR is a very important specification, as it indicates how much of the commonmode signal will appear in your measurement. The value of the CMRR often depends
on signal frequency as well, and must be specified as a function thereof.
It is often important in reducing noise on transmission lines. For example, when
measuring the resistance of a thermocouple in a noisy environment, the noise from the
environment appears as an offset on both input leads, making it a common-mode
voltage signal. The CMRR of the measurement instrument determines the attenuation
applied to the offset or noise.
An operational amplifier (op-amp) has two inputs, V+ and V-, and an open-loop gain G. In
the ideal case, the output of an ideal op-amp behaves according to the equation
This equation represents an infinite CMRR: if both inputs fluctuate by the same
amount (while maintaining a constant difference V+ - V-), this change will have no
bearing on the output. In real applications, this is not always the case: the lower the
CMRR, the larger the effect on the output signal, following the general equation
Where VCM represents the common-mode voltage at the inputs, or (V+ + V-)/2.
The 741, a common op-amp chip, has a CMRR of 90 dB, which is reasonable in most
cases. A value of 70 dB may be adequate for applications which are insensitive to the
effects on amplifier output;some high-end devices may use op-amps with a CMRR of
120 dB or more.
So for example, an op-amp with 90dB CMRR operating with 10V of common-mode
will have an output error of 316uV.
Contents
[hide]
1 Theory
2 Example: operational amplifiers
3 See also
4 External links
Theory [edit]
and
where
As differential gain should exceed common-mode gain, this will be a positive number,
and the higher the better.
The CMRR is a very important specification, as it indicates how much of the commonmode signal will appear in your measurement. The value of the CMRR often depends
on signal frequency as well, and must be specified as a function thereof.
It is often important in reducing noise on transmission lines. For example, when
measuring the resistance of a thermocouple in a noisy environment, the noise from the
environment appears as an offset on both input leads, making it a common-mode
voltage signal. The CMRR of the measurement instrument determines the attenuation
applied to the offset or noise.
This equation represents an infinite CMRR: if both inputs fluctuate by the same
amount (while maintaining a constant difference V+ - V-), this change will have no
bearing on the output. In real applications, this is not always the case: the lower the
CMRR, the larger the effect on the output signal, following the general equation
Where VCM represents the common-mode voltage at the inputs, or (V+ + V-)/2.
The 741, a common op-amp chip, has a CMRR of 90 dB, which is reasonable in most
cases. A value of 70 dB may be adequate for applications which are insensitive to the
effects on amplifier output;some high-end devices may use op-amps with a CMRR of
120 dB or more.
So for example, an op-amp with 90dB CMRR operating with 10V of common-mode
will have an output error of 316uV.
Contents
[hide]
1 Theory
2 Example: operational amplifiers
3 See also
4 External links
Theory [edit]
Ideally, a differential amplifier takes the voltages,
and
where
differential gain.
The CMRR is defined as the ratio of the powers of the differential gain over the
common-mode gain, measured in positive decibels (thus using the 20 log rule):
As differential gain should exceed common-mode gain, this will be a positive number,
and the higher the better.
The CMRR is a very important specification, as it indicates how much of the commonmode signal will appear in your measurement. The value of the CMRR often depends
on signal frequency as well, and must be specified as a function thereof.
It is often important in reducing noise on transmission lines. For example, when
measuring the resistance of a thermocouple in a noisy environment, the noise from the
environment appears as an offset on both input leads, making it a common-mode
voltage signal. The CMRR of the measurement instrument determines the attenuation
applied to the offset or noise.
This equation represents an infinite CMRR: if both inputs fluctuate by the same
amount (while maintaining a constant difference V+ - V-), this change will have no
bearing on the output. In real applications, this is not always the case: the lower the
CMRR, the larger the effect on the output signal, following the general equation
Where VCM represents the common-mode voltage at the inputs, or (V+ + V-)/2.
The 741, a common op-amp chip, has a CMRR of 90 dB, which is reasonable in most
cases. A value of 70 dB may be adequate for applications which are insensitive to the
effects on amplifier output;some high-end devices may use op-amps with a CMRR of
120 dB or more.
So for example, an op-amp with 90dB CMRR operating with 10V of common-mode
will have an output error of 316uV.
The Common Source JFET Amplifier
So far we have looked at the bipolar type transistor amplifier and especially the common emitter
amplifier, but small signal amplifiers can also be made using Field Effect Transistors or FET's for
short. These devices have the advantage over bipolar transistors of having an extremely high input
impedance along with a low noise output making them ideal for use in amplifier circuits that have very
small input signals.
The design of an amplifier circuit based around a junction field effect transistor or "JFET", (N-channel
FET for this tutorial) or even a metal oxide silicon FET or "MOSFET" is exactly the same principle as
that for the bipolar transistor circuit used for a Class A amplifier circuit we looked at in the previous
tutorial.
Firstly, a suitable quiescent point or "Q-point" needs to be found for the correct biasing of the JFET
amplifier circuit with single amplifier configurations of Common-source (CS), Common-drain (CD) or
Source-follower (SF) and the Common-gate (CG) available for most FET devices. These three JFET
amplifier configurations correspond to the common-emitter, emitter-follower and the common-base
configurations using bipolar transistors. In this tutorial about FET amplifiers we will look at the popular
Common Source JFET Amplifier as this is the most widely used JFET amplifier design.
Consider the Common Source JFET Amplifier circuit configuration below.
The amplifier circuit consists of an N-channel JFET, but the device could also be an equivalent Nchannel depletion-mode MOSFET as the circuit diagram would be the same just a change in the FET,
connected in a common source configuration. The JFET gate voltage Vg is biased through the potential
divider network set up by resistors R1 and R2 and is biased to operate within its saturation region which
is equivalent to the active region of the bipolar junction transistor. Unlike a bipolar transistor circuit, the
junction FET takes virtually no input gate current allowing the gate to be treated as an open circuit. Then
no input characteristics curves are required. We can compare the JFET to the bipolar junction transistor
(BJT) in the following table.
JFET
BJT
Gate, (G)
Base, (B)
Drain, (D)
Collector, (C)
Source, (S)
Emitter, (E)
Since the N-Channel JFET is a depletion mode device and is normally "ON", a negative gate voltage
with respect to the source is required to modulate or control the drain current. This negative voltage can
be provided by biasing from a separate power supply voltage or by a self biasing arrangement as long
as a steady current flows through the JFET even when there is no input signal present and Vg
maintains a reverse bias of the gate-source pn junction. In this example the biasing is provided from a
potential divider network allowing the input signal to produce a voltage fall at the gate as well as voltage
rise at the gate with a sinusoidal signal. Any suitable pair of resistor values in the correct proportions
would produce the correct biasing voltage so the DC gate biasing voltage Vg is given as:
Note that this equation only determines the ratio of the resistors R1and R2, but in order to take
advantage of the very high input impedance of the JFET as well as reducing the power dissipation within
the circuit, we need to make these resistor values as high as possible, with values in the order of 1 to
10M being common.
The input signal, (Vin) of the common source JFET amplifier is applied between the Gate terminal and
the zero volts rail, (0v). With a constant value of gate voltageVg applied the JFET operates within its
"Ohmic region" acting like a linear resistive device. The drain circuit contains the load resistor, Rd. The
output voltage, Vout is developed across this load resistance. The efficiency of the common source
JFET amplifier can be improved by the addition of a resistor, Rs included in the source lead with the
same drain current flowing through this resistor. Resistor, Rs is also used to set the JFET amplifiers "Qpoint".
When the JFET is switched fully "ON" a voltage drop equal to Rs x Idis developed across this resistor
raising the potential of the source terminal above 0v or ground level. This voltage drop across Rs due to
the drain current provides the necessary reverse biasing condition across the gate resistor, R2
effectively generating negative feedback. In order to keep the gate-source junction reverse biased, the
source voltage, Vs needs to be higher than the gate voltage, Vg. This source voltage is therefore given
as:
Then the Drain current, Id is also equal to the Source current, Is as "No Current" enters the Gate
terminal and this can be given as:
This potential divider biasing circuit improves the stability of the common source JFET amplifier circuit
when being fed from a single DC supply compared to that of a fixed voltage biasing circuit. Both resistor,
Rs and the source by-pass capacitor, Cs serve basically the same function as the emitter resistor and
capacitor in the common emitter bipolar transistor amplifier circuit, namely to provide good stability and
prevent a reduction in the loss of the voltage gain. However, the price paid for a stabilized quiescent
gate voltage is that more of the supply voltage is dropped across Rs.
The the value in farads of the source by-pass capacitor is generally fairly high above 100uF and will be
polarized. This gives the capacitor an impedance value much smaller, less than 10% of the
transconductance, gm (the transfer coefficient representing gain) value of the device. At high
frequencies the by-pass capacitor acts essentially as a short-circuit and the source will be effectively
connected directly to ground.
The basic circuit and characteristics of a Common Source JFET Amplifier are very similar to that of
the common emitter amplifier. A DC load line is constructed by joining the two points relating to the drain
current, Id and the supply voltage, Vddremembering that when Id = 0: ( Vdd = Vds ) and whenVds =
0: ( Id = Vdd/RL ). The load line is therefore the intersection of the curves at the Q-point as follows.
Common Source JFET Amplifier Characteristics Curves
As with the common emitter bipolar circuit, the DC load line for the common source JFET amplifier
produces a straight line equation whose gradient is given as: -1/(Rd + Rs) and that it crosses the
vertical Id axis at point A equal to Vdd/(Rd + Rs). The other end of the load line crosses the horizontal
axis at point B which is equal to the supply voltage, Vdd. The actual position of the Q-point on the DC
load line is generally positioned at the mid centre point of the load line (for class-A operation) and is
determined by the mean value of Vg which is biased negatively as the JFET is a depletion-mode
device. Like the bipolar common emitter amplifier the output of the Common Source JFET Amplifier is
180o out of phase with the input signal.
One of the main disadvantages of using Depletion-mode JFET is that they need to be negatively biased.
Should this bias fail for any reason the gate-source voltage may rise and become positive causing an
increase in drain current resulting in failure of the drain voltage, Vd. Also the high channel resistance,
Rds(on) of the junction FET, coupled with high quiescent steady state drain current makes these
devices run hot so additional heatsink is required. However, most of the problems associated with using
JFET's can be greatly reduced by using enhancement-mode MOSFET devices instead.
MOSFETsor Metal Oxide Semiconductor FET's have much higher input impedances and low channel
resistances compared to the equivalent JFET. Also the biasing arrangements for MOSFETs are different
and unless we bias them positively for N-channel devices and negatively for P-channel devices no drain
current will flow, then we have in effect a fail safe transistor.
Distortion to the output signal in the form of amplitude distortion due to clipping and as well as the
effect of phase and frequency distortion.
Firstly, a suitable quiescent point or "Q-point" needs to be found for the correct biasing of the JFET
amplifier circuit with single amplifier configurations of Common-source (CS), Common-drain (CD) or
Source-follower (SF) and the Common-gate (CG) available for most FET devices. These three JFET
amplifier configurations correspond to the common-emitter, emitter-follower and the common-base
configurations using bipolar transistors. In this tutorial about FET amplifiers we will look at the popular
Common Source JFET Amplifier as this is the most widely used JFET amplifier design.
Consider the Common Source JFET Amplifier circuit configuration below.
The amplifier circuit consists of an N-channel JFET, but the device could also be an equivalent Nchannel depletion-mode MOSFET as the circuit diagram would be the same just a change in the FET,
connected in a common source configuration. The JFET gate voltage Vg is biased through the potential
divider network set up by resistors R1 and R2 and is biased to operate within its saturation region which
is equivalent to the active region of the bipolar junction transistor. Unlike a bipolar transistor circuit, the
junction FET takes virtually no input gate current allowing the gate to be treated as an open circuit. Then
no input characteristics curves are required. We can compare the JFET to the bipolar junction transistor
(BJT) in the following table.
JFET
BJT
Gate, (G)
Base, (B)
Drain, (D)
Collector, (C)
Source, (S)
Emitter, (E)
Since the N-Channel JFET is a depletion mode device and is normally "ON", a negative gate voltage
with respect to the source is required to modulate or control the drain current. This negative voltage can
be provided by biasing from a separate power supply voltage or by a self biasing arrangement as long
as a steady current flows through the JFET even when there is no input signal present and Vg
maintains a reverse bias of the gate-source pn junction. In this example the biasing is provided from a
potential divider network allowing the input signal to produce a voltage fall at the gate as well as voltage
rise at the gate with a sinusoidal signal. Any suitable pair of resistor values in the correct proportions
would produce the correct biasing voltage so the DC gate biasing voltage Vg is given as:
Note that this equation only determines the ratio of the resistors R1and R2, but in order to take
advantage of the very high input impedance of the JFET as well as reducing the power dissipation within
the circuit, we need to make these resistor values as high as possible, with values in the order of 1 to
10M being common.
The input signal, (Vin) of the common source JFET amplifier is applied between the Gate terminal and
the zero volts rail, (0v). With a constant value of gate voltageVg applied the JFET operates within its
"Ohmic region" acting like a linear resistive device. The drain circuit contains the load resistor, Rd. The
output voltage, Vout is developed across this load resistance. The efficiency of the common source
JFET amplifier can be improved by the addition of a resistor, Rs included in the source lead with the
same drain current flowing through this resistor. Resistor, Rs is also used to set the JFET amplifiers "Qpoint".
When the JFET is switched fully "ON" a voltage drop equal to Rs x Idis developed across this resistor
raising the potential of the source terminal above 0v or ground level. This voltage drop across Rs due to
the drain current provides the necessary reverse biasing condition across the gate resistor, R2
effectively generating negative feedback. In order to keep the gate-source junction reverse biased, the
source voltage, Vs needs to be higher than the gate voltage, Vg. This source voltage is therefore given
as:
Then the Drain current, Id is also equal to the Source current, Is as "No Current" enters the Gate
terminal and this can be given as:
This potential divider biasing circuit improves the stability of the common source JFET amplifier circuit
when being fed from a single DC supply compared to that of a fixed voltage biasing circuit. Both resistor,
Rs and the source by-pass capacitor, Cs serve basically the same function as the emitter resistor and
capacitor in the common emitter bipolar transistor amplifier circuit, namely to provide good stability and
prevent a reduction in the loss of the voltage gain. However, the price paid for a stabilized quiescent
gate voltage is that more of the supply voltage is dropped across Rs.
The the value in farads of the source by-pass capacitor is generally fairly high above 100uF and will be
polarized. This gives the capacitor an impedance value much smaller, less than 10% of the
transconductance, gm (the transfer coefficient representing gain) value of the device. At high
frequencies the by-pass capacitor acts essentially as a short-circuit and the source will be effectively
connected directly to ground.
The basic circuit and characteristics of a Common Source JFET Amplifier are very similar to that of
the common emitter amplifier. A DC load line is constructed by joining the two points relating to the drain
current, Id and the supply voltage, Vddremembering that when Id = 0: ( Vdd = Vds ) and whenVds =
0: ( Id = Vdd/RL ). The load line is therefore the intersection of the curves at the Q-point as follows.
Common Source JFET Amplifier Characteristics Curves
As with the common emitter bipolar circuit, the DC load line for the common source JFET amplifier
produces a straight line equation whose gradient is given as: -1/(Rd + Rs) and that it crosses the
vertical Id axis at point A equal to Vdd/(Rd + Rs). The other end of the load line crosses the horizontal
axis at point B which is equal to the supply voltage, Vdd. The actual position of the Q-point on the DC
load line is generally positioned at the mid centre point of the load line (for class-A operation) and is
determined by the mean value of Vg which is biased negatively as the JFET is a depletion-mode
device. Like the bipolar common emitter amplifier the output of the Common Source JFET Amplifier is
180o out of phase with the input signal.
One of the main disadvantages of using Depletion-mode JFET is that they need to be negatively biased.
Should this bias fail for any reason the gate-source voltage may rise and become positive causing an
increase in drain current resulting in failure of the drain voltage, Vd. Also the high channel resistance,
Rds(on) of the junction FET, coupled with high quiescent steady state drain current makes these
devices run hot so additional heatsink is required. However, most of the problems associated with using
JFET's can be greatly reduced by using enhancement-mode MOSFET devices instead.
MOSFETsor Metal Oxide Semiconductor FET's have much higher input impedances and low channel
resistances compared to the equivalent JFET. Also the biasing arrangements for MOSFETs are different
and unless we bias them positively for N-channel devices and negatively for P-channel devices no drain
current will flow, then we have in effect a fail safe transistor.
Distortion to the output signal in the form of amplitude distortion due to clipping and as well as the
effect of phase and frequency distortion.
The amplifier circuit consists of an N-channel JFET, but the device could also be an equivalent Nchannel depletion-mode MOSFET as the circuit diagram would be the same just a change in the FET,
connected in a common source configuration. The JFET gate voltage Vg is biased through the potential
divider network set up by resistors R1 and R2 and is biased to operate within its saturation region which
is equivalent to the active region of the bipolar junction transistor. Unlike a bipolar transistor circuit, the
junction FET takes virtually no input gate current allowing the gate to be treated as an open circuit. Then
no input characteristics curves are required. We can compare the JFET to the bipolar junction transistor
(BJT) in the following table.
JFET
BJT
Gate, (G)
Base, (B)
Drain, (D)
Collector, (C)
Source, (S)
Emitter, (E)
Since the N-Channel JFET is a depletion mode device and is normally "ON", a negative gate voltage
with respect to the source is required to modulate or control the drain current. This negative voltage can
be provided by biasing from a separate power supply voltage or by a self biasing arrangement as long
as a steady current flows through the JFET even when there is no input signal present and Vg
maintains a reverse bias of the gate-source pn junction. In this example the biasing is provided from a
potential divider network allowing the input signal to produce a voltage fall at the gate as well as voltage
rise at the gate with a sinusoidal signal. Any suitable pair of resistor values in the correct proportions
would produce the correct biasing voltage so the DC gate biasing voltage Vg is given as:
Note that this equation only determines the ratio of the resistors R1and R2, but in order to take
advantage of the very high input impedance of the JFET as well as reducing the power dissipation within
the circuit, we need to make these resistor values as high as possible, with values in the order of 1 to
10M being common.
The input signal, (Vin) of the common source JFET amplifier is applied between the Gate terminal and
the zero volts rail, (0v). With a constant value of gate voltageVg applied the JFET operates within its
"Ohmic region" acting like a linear resistive device. The drain circuit contains the load resistor, Rd. The
output voltage, Vout is developed across this load resistance. The efficiency of the common source
JFET amplifier can be improved by the addition of a resistor, Rs included in the source lead with the
same drain current flowing through this resistor. Resistor, Rs is also used to set the JFET amplifiers "Qpoint".
When the JFET is switched fully "ON" a voltage drop equal to Rs x Idis developed across this resistor
raising the potential of the source terminal above 0v or ground level. This voltage drop across Rs due to
the drain current provides the necessary reverse biasing condition across the gate resistor, R2
effectively generating negative feedback. In order to keep the gate-source junction reverse biased, the
source voltage, Vs needs to be higher than the gate voltage, Vg. This source voltage is therefore given
as:
Then the Drain current, Id is also equal to the Source current, Is as "No Current" enters the Gate
terminal and this can be given as:
This potential divider biasing circuit improves the stability of the common source JFET amplifier circuit
when being fed from a single DC supply compared to that of a fixed voltage biasing circuit. Both resistor,
Rs and the source by-pass capacitor, Cs serve basically the same function as the emitter resistor and
capacitor in the common emitter bipolar transistor amplifier circuit, namely to provide good stability and
prevent a reduction in the loss of the voltage gain. However, the price paid for a stabilized quiescent
gate voltage is that more of the supply voltage is dropped across Rs.
The the value in farads of the source by-pass capacitor is generally fairly high above 100uF and will be
polarized. This gives the capacitor an impedance value much smaller, less than 10% of the
transconductance, gm (the transfer coefficient representing gain) value of the device. At high
frequencies the by-pass capacitor acts essentially as a short-circuit and the source will be effectively
connected directly to ground.
The basic circuit and characteristics of a Common Source JFET Amplifier are very similar to that of
the common emitter amplifier. A DC load line is constructed by joining the two points relating to the drain
current, Id and the supply voltage, Vddremembering that when Id = 0: ( Vdd = Vds ) and whenVds =
0: ( Id = Vdd/RL ). The load line is therefore the intersection of the curves at the Q-point as follows.
Common Source JFET Amplifier Characteristics Curves
As with the common emitter bipolar circuit, the DC load line for the common source JFET amplifier
produces a straight line equation whose gradient is given as: -1/(Rd + Rs) and that it crosses the
vertical Id axis at point A equal to Vdd/(Rd + Rs). The other end of the load line crosses the horizontal
axis at point B which is equal to the supply voltage, Vdd. The actual position of the Q-point on the DC
load line is generally positioned at the mid centre point of the load line (for class-A operation) and is
determined by the mean value of Vg which is biased negatively as the JFET is a depletion-mode
device. Like the bipolar common emitter amplifier the output of the Common Source JFET Amplifier is
180o out of phase with the input signal.
One of the main disadvantages of using Depletion-mode JFET is that they need to be negatively biased.
Should this bias fail for any reason the gate-source voltage may rise and become positive causing an
increase in drain current resulting in failure of the drain voltage, Vd. Also the high channel resistance,
Rds(on) of the junction FET, coupled with high quiescent steady state drain current makes these
devices run hot so additional heatsink is required. However, most of the problems associated with using
JFET's can be greatly reduced by using enhancement-mode MOSFET devices instead.
MOSFETsor Metal Oxide Semiconductor FET's have much higher input impedances and low channel
resistances compared to the equivalent JFET. Also the biasing arrangements for MOSFETs are different
and unless we bias them positively for N-channel devices and negatively for P-channel devices no drain
current will flow, then we have in effect a fail safe transistor.
Distortion to the output signal in the form of amplitude distortion due to clipping and as well as the
effect of phase and frequency distortion.
Current mirror
From Wikipedia, the free encyclopedia
Contents
[hide]
1 Mirror characteristics
2 Practical approximations
3 Circuit realizations of current mirrors
o 3.1 Basic idea
o 3.2 Basic BJT current mirror
3.2.1 Output resistance
3.2.2 Compliance voltage
3.2.3 Extensions and complications
o 3.3 Basic MOSFET current mirror
3.3.1 Output resistance
3.3.2 Compliance voltage
3.3.3 Extensions and reservations
o 3.4 Feedback assisted current mirror
3.4.1 Output resistance
3.4.2 Compliance voltage
o 3.5 Other current mirrors
4 Notes
5 See also
6 References
7 External links
it provides the same current regardless of voltage, that is, there are no
compliance range requirements
it has no frequency limitations, while a real mirror has limitations due to the
parasitic capacitances of the transistors
the ideal source has no sensitivity to real-world effects like noise, powersupply voltage variations and component tolerances.
Figure 1: A current mirror implemented with npn bipolar transistors using a resistor to
set the reference current IREF; VCC = supply voltage
voltage is zero as shown. Consequently, the voltage drop across Q1 is VBE, that is, this
voltage is set by the diode law and Q1 is said to be diode connected. (See also EbersMoll model.) It is important to have Q1 in the circuit instead of a simple diode, because
Q1 sets VBE for transistor Q2. If Q1 and Q2 are matched, that is, have substantially the
same device properties, and if the mirror output voltage is chosen so the collectorbase voltage of Q2 is also zero, then the VBE-value set by Q1 results in an emitter
current in the matched Q2 that is the same as the emitter current in Q1. Because Q1 and
Q2 are matched, their 0-values also agree, making the mirror output current the same
as the collector current of Q1. The current delivered by the mirror for arbitrary
collector-base reverse bias VCB of the output transistor is given by (see bipolar transistor):
,
where IS = reverse saturation current or scale current, VT = thermal voltage and VA = Early
voltage. This current is related to the reference current IREF when the output transistor
VCB = 0 V by:
The reference current supplies the collector current to Q1 and the base currents to both
transistors when both transistors have zero base-collector bias, the two base
currents are equal, IB1=IB2=IB.
where VA is the Early voltage and 0 = transistor for VCB = 0 V. Besides the difference
due to the Early effect, the transistor -values will differ because the 0-values depend
on current, and the two transistors now carry different currents (see Gummel-Poon
model).
Further, Q2 may get substantially hotter than Q1 due to the associated higher power
dissipation. To maintain matching, the temperature of the transistors must be nearly
the same. In integrated circuits and transistor arrays where both transistors are on the
same die, this is easy to achieve. But if the two transistors are widely separated, the
precision of the current mirror is compromised.
Additional matched transistors can be connected to the same base and will supply the
same collector current. In other words, the right half of the circuit can be duplicated
several times with various resistor values replacing R2 on each. Note, however, that
each additional right-half transistor "steals" a bit of collector current from Q1 due to
the non-zero base currents of the right-half transistors. This will result in a small
reduction in the programmed current.
An example of a mirror with emitter degeneration to increase mirror resistance is
found in two-port networks.
For the simple mirror shown in the diagram, typical values of
match of 1% or better.
Figure 2: An n-channel MOSFET current mirror with a resistor to set the reference
current IREF; VDD is the supply voltage
where,
is a technology related constant associated with the transistor, W/L is the
width to length ratio of the transistor, VGS is the gate-source voltage, Vth is the
threshold voltage, is the channel length modulation constant, and VDS is the drain source
voltage.
Consequently, the currents in the two leg resistors are held nearly the same, and the
output current of the mirror is very nearly the same as the collector current IC1 in Q1,
which in turn is set by the reference current as
where 1 for transistor Q1 and 2 for Q2 differ due to the Early effect if the reverse bias
across the collector-base of Q2 is non-zero.
Combining this result with Ohm's law for RE, Ve can be eliminated, to find:[nb 3]
Substituting for Ib and collecting terms the output resistance Rout is found to be:
For a large gain Av >> r / RE the maximum output resistance obtained with this
circuit is
This time, RE is the resistance of the source-leg MOSFETs M3, M4. Unlike Figure 3,
however, as Av is increased (holding RE fixed in value), Rout continues to increase, and
does not approach a limiting value at large Av.
Notes [edit]
1. ^ Keeping the output resistance high means more than keeping the MOSFET in
active mode, because the output resistance of real MOSFETs only begins to increase
on entry into the active region, then rising to become close to maximum value only
when VDG 0 V.
2. ^ An idealized version of the argument in the text, valid for infinite op amp gain, is as
follows. If the op amp is replaced by a nullor, voltage V2 = V1, so the currents in the
leg resistors are held at the same value. That means the emitter currents of the
transistors are the same. If the VCB of Q2 increases, so does the output transistor
because of the Early effect: = 0 ( 1 + VCB / VA ). Consequently the base current to
Q2 given by IB = IE / ( + 1) decreases and the output current Iout = IE / (1 + 1 / )
increases slightly because increases slightly. Doing the math,
where the transistor output resistance is given by r O = ( VA + VCB ) / Iout. That is, the
ideal mirror resistance for the circuit using an ideal op amp nullor is Rout = ( + 1 ) rO,
in agreement with the value given later in the text when the gain .
3. ^ Notice that as Av , Ve 0 and Ib IX.
Differential amplifier
From Wikipedia, the free encyclopedia
Contents
[hide]
1 Theory
2 Long-tailed pair
8 External links
o
o
Theory [edit]
Many electronic devices use differential amplifiers internally. The output of an ideal
differential amplifier is given by:
Where
and
are the input voltages and
is the differential gain.
In practice, however, the gain is not quite equal for the two inputs. This means, for
instance, that if
and
are equal, the output will not be zero, as it would be in the
ideal case. A more realistic expression for the output of a differential amplifier thus
includes a second term.
to accurately cancel voltages that are common to both inputs. The common-mode
rejection ratio is defined as:
Configurations [edit]
A differential (long-tailed,[nb 2] emitter-coupled) pair amplifier consists of two
amplifying stages with common (emitter, source or cathode) degeneration.
Operation [edit]
To explain the circuit operation, four particular modes are isolated below although, in
practice, some of them act simultaneously and their effects are superimposed.
Biasing [edit]
In contrast with classic amplifying stages that are biased from the side of the base
(and so they are highly -dependent), the differential pair is directly biased from the
side of the emitters by sinking/injecting the total quiescent current. The series
negative feedback (the emitter degeneration) makes the transistors act as voltage
stabilizers; it forces them to adjust their VBE voltages (base currents) to pass the
quiescent current through their collector-emitter junctions.[nb 3] So, due to the negative
feedback, the quiescent current depends slightly on the transistor's .
The biasing base currents needed to evoke the quiescent collector currents usually
come from the ground, pass through the input sources and enter the bases. So, the
sources have to be galvanic (DC) to ensure paths for the biasing currents and low
resistive enough to not create significant voltage drops across them. Otherwise,
additional DC elements should be connected between the bases and the ground (or the
positive power supply).
flow directly through the "diode bridge" between the two input sources and will
damage them.
At common mode, the emitter voltage follows the input voltage variations; there is a
full negative feedback and the gain is minimum. At differential mode, the emitter
voltage is fixed (equal to the instant common input voltage); there is no negative
feedback and the gain is maximum.
Improvements [edit]
usually implemented by a current mirror because of its high compliance voltage (small
voltage drop across the output transistor).
The same arrangement is widely used in cascode circuits as well. It can be generalized
by an equivalent circuit consisting of a constant current source loaded by two
connected in parallel voltage sources with equal voltages. The current source
determines the common current flowing through the voltage sources while the voltage
sources fix the voltage across the current source. The emitter current source is usually
implemented as a common-emitter transistor stage with constant base voltage driving
with current the two common-base transistor stages. So, this arrangement can be
considered as a cascode consisting of cascaded common-emitter and common-base
stages.
The output impedance of the differential pair is high (especially for the improved
differential pair from Fig. 3).
Applications [edit]
Differential amplifiers are found in many circuits that utilize series negative feedback
(op-amp follower, non-inverting amplifier, etc.), where one input is used for the input
signal, the other for the feedback signal (usually implemented by operational amplifiers).
For comparison, the old-fashioned inverting single-ended op-amps from the early
1940s could realize only parallel negative feedback by connecting additional resistor
networks (an op-amp inverting amplifier is the most popular example). A common
application is for the control of motors or servos, as well as for signal amplification
applications. In discrete electronics, a common arrangement for implementing a
differential amplifier is the long-tailed pair, which is also usually found as the
differential element in most op-amp integrated circuits. A long-tailed pair can be used as
an analog multiplier with the differential voltage as one input and the biasing current
as another.
A differential amplifier is used as the input stage emitter coupled logic gates and as
switch. When used as a switch, the "left" base/grid is used as signal input and the
"right" base/grid is grounded; output is taken from the right collector/plate. When the
input is zero or negative, the output is close to zero (but can be not saturated); when
the input is positive, the output is most-positive, dynamic operation being the same as
the amplifier use described above.
Footnotes [edit]
1.
2.
3.
4.
5.
This is a current mirror, a device that uses the current in one half of the circuit to control
the current flow in the other half. The current is the same in both halves. The switch
on the left changes the current flow in the left half, which is mirrored in the right half.
The switch on the right causes the resistor to be bypassed, but the current mirror
ensures that the flow of current does not change.
Q1's emitter-base junction acts like a diode. The current through it is set by the
resistor network below it. Wiring the base to the collector ensures that the base current
can flow, so the transistor can stay in the active mode. Since Q1's base is wired to
Q2's, they are at the same voltage, so Q2's emitter-base junction must have the same
amount of current flowing through it. (It acts like a diode, so the current is determined
by the voltage across it.)
Both halves of the circuit have nearly the same current flowing through them. The
only difference is that the base currents from Q1 and Q2 flow through the left half,
and not the right half. We use high-beta transistors in this circuit to make these base
currents as small as possible.
Miller effect
From Wikipedia, the free encyclopedia
where
Although the term Miller effect normally refers to capacitance, any impedance
connected between the input and another node exhibiting gain can modify the
amplifier input impedance via this effect. These properties of the Miller effect are
generalized in the Miller theorem.
Contents
[hide]
1 History
2 Derivation
3 Effects
o 3.1 Mitigation
4 Impact on frequency response
o 4.1 Miller approximation
5 References and notes
6 See also
History [edit]
The Miller effect was named after John Milton Miller.[1] When Miller published his work
in 1920, he was working on vacuum tube triodes; however, the same theory applies to
more modern devices such as bipolar and MOS transistors.
Derivation [edit]
.
The input impedance of the circuit is
Thus the effective or Miller capacitance CM is the physical C multiplied by the factor
.[2]
Effects [edit]
As most amplifiers are inverting (
as defined above is positive), the effective
capacitance at their inputs is increased due to the Miller effect. This can reduce the
bandwidth of the amplifier, restricting its range of operation to lower frequencies. The
tiny junction and stray capacitances between the base and collector terminals of a
Darlington transistor, for example, may be drastically increased by the Miller effects due
to its high gain, lowering the high frequency response of the device.
It is also important to note that the Miller capacitance is the capacitance seen looking
into the input. If looking for all of the RC time constants (poles) it is important to include
as well the capacitance seen by the output. The capacitance on the output is often
neglected since it sees
and amplifier outputs are typically low
impedance. However if the amplifier has a high impedance output, such as if a gain
stage is also the output stage, then this RC can have a significant impact on the
performance of the amplifier. This is when pole splitting techniques are used.
The Miller effect may also be exploited to synthesize larger capacitors from smaller
ones. One such example is in the stabilization of feedback amplifiers, where the required
capacitance may be too large to practically include in the circuit. This may be
particularly important in the design of integrated circuit, where capacitors can consume
significant area, increasing costs.
Mitigation [edit]
The Miller effect may be undesired in many cases, and approaches may be sought to
lower its impact. Several such techniques are used in the design of amplifiers.
A current buffer stage may be added at the output to lower the gain
between the
input and output terminals of the amplifier (though not necessarily the overall gain).
For example, a common base may be used as a current buffer at the output of a common
emitter stage, forming a cascode. This will typically reduce the Miller effect and
increase the bandwidth of the amplifier.
Alternatively, a voltage buffer may be used before the amplifier input, reducing the
effective source impedance seen by the input terminals. This lowers the
time
constant of the circuit and typically increases the bandwidth.
the output voltage of the circuit is simply Av vA, independent of frequency. However,
when CC is not zero, Figure 2B shows the large Miller capacitance appears at the input
of the circuit. The voltage output of the circuit now becomes
and rolls off with frequency once frequency is high enough that CMRA 1. It is a
low-pass filter. In analog amplifiers this curtailment of frequency response is a major
implication of the Miller effect. In this example, the frequency 3dB such that 3dB
CMRA = 1 marks the end of the low-frequency response region and sets the bandwidth or
cutoff frequency of the amplifier.
It is important to notice that the effect of CM upon the amplifier bandwidth is greatly
reduced for low impedance drivers (CM RA is small if RA is small). Consequently, one
way to minimize the Miller effect upon bandwidth is to use a low-impedance driver,
for example, by interposing a voltage follower stage between the driver and the
amplifier, which reduces the apparent driver impedance seen by the amplifier.
The output voltage of this simple circuit is always Av vi. However, real amplifiers have
output resistance. If the amplifier output resistance is included in the analysis, the
output voltage exhibits a more complex frequency response and the impact of the
frequency-dependent current source on the output side must be taken into account.[3]
Ordinarily these effects show up only at frequencies much higher than the roll-off due
to the Miller capacitance, so the analysis presented here is adequate to determine the
useful frequency range of an amplifier dominated by the Miller effect.
produced. When used with a common emitter amplifier, which also has a phase
shift of 180 between base and collector, the filters produce positive feedback
to cause oscillation to take place. The RC network commonly used is that of a
high pass filter, (Fig. 3.1.1) which produces a phase shift of between 0 and
90 depending on the frequency of the signal used, although low pass filters
can also be used.
In Fig. 3.1.5 there is virtually no loading of the filter circuits, due to the
presence of the op amp buffers. Because the frequency of oscillation of the
buffered amplifier shown in Fig. 5 is higher than that in Fig.3.1.4, due to its use
of low pass filters, the frequency of oscillation for Fig. 3.1.4 and Fig. 3.1.5 must
be calculated differently.
Although both oscillators use the same values for R and C (10K & 10nF), the
BJT version shown in Fig. 3.1.4 has its frequency is calculated as:
However, because the op amp version in Fig. 3.1.5 uses low pass filters, a
change in formula is needed: