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axial pn-junction
electrode
Elektrode
electrode
TCO
p
electrode
TCO
n+
SiO2
electrode
n
c - Si
p++
++
p+
p
c-Si
++
glass
p++
n++
glass
Axial case:
Low area of p-n-junction
high photo-current density
higher Voc
Large outer surface area
high surface recombination
lower Voc
electrode
Elektrode
electrode
TCO
p
electrode
TCO
n+
SiO2
electrode
n
c - Si
p++
p+
p
c-Si
++
++
glass
radial pn-junction
p++
n++
glass
axial pn-junction
Top down:
Etching into bulk
5 m
p
n++
glass
Etched nanowires
different morphologies
on different grain orientations
EBSD map
of Si substrate layer:
100 m grains
0.5 mm
3 m
SiO2
TCO
c-Si
c-Si
n n+
n++
GlasGlas
a-Si
i/p+
TEM Investigations
by N. Petkov,
Tyndall, Cork, Ireland
500 nm
SiNW1
200 nm
TCO
Etched NWs
400 nm
Si wafer
30 nm
n-doped nanowires on
p-doped silicon thin film on glass
shunting!
p
n++
glass
Voc 400 mV
shunting!
7.29%
Voc: 476 mV
80
60
FF: 0.562
40
20
0
-20
-1,0 -0,8 -0,6 -0,4 -0,2 0,0 0,2 0,4 0,6 0,8
Voltage (V)
7.3 % efficiency
Voc 476 mV
2,0x10
U=30 kV
IBeam=280 pA
-9
1,5x10
-9
1,0x10
-10
5,0x10
280 pA
0,0
0
20
40
60
80 100
Position (m)
120
Cu
Circuit board
Soldering
cells on the
circuit board
Cut
Current (A)
Solder
3 mm
Wire
bonding
1,0x10
-3
5,0x10
-4
0,0
-5,0x10
-4
-1,0x10
-3
-1,5x10
-3
-2,0x10
-3
-2,5x10
-3
-3,0x10
-3
Cell 28+29
Cell 28+29+30
Cell 28+29+30+7
Cell 28+29+30+7+8
Cell 28+29+30+7+8+31
Cell 28+29+30+7+8+31+32
0,5
1,0
U (V)
1,5
2,0
2,5
3,0
3,5
Open Questions
Optimal diameter and orientation of wires
Doping during VLS growth
Influence of Au in VLS grown wires
Reason for shunting and how to avoid it
Removing metal particles from holes between nanowires
Ag for etched nanowires
Surface passivation
Contacting cells
Summary
Silicon nanowire solar cells were prepared
Voc 260 mV: VLS grown nanowire cell on wafer, axial p-n-junction
Voc 476 mV, 7.3% efficiency:
Nanowires etched into wafer, radial a-Si heteroemitter, AZO contact
Acknowledgement
N. Petkov, Tyndall, Cork, Ireland
TEM investigations
M. Kittler, W. Seifert, Joint Lab IHP/BTU Cottbus, Germany
EBIC measurements
Funding
EC: SiNAPS Grant 257856 FP7-ICT-2009-5
EC : NanoPV Grant 246331 FP7-NMP-2009-SMALL-3