A Technical Seminar Report

Submitted in Partial Fulfilment of the academic requirements

For the award of degree of

Bachelor of Technology

In

Electronics and Communication Engineering

BY
P.VIVEK

11C71A04A0

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

ELLENKI COLLEGE OF ENGINEERING AND TECHNOLOGY
(Affiliated to Jawaharlal Nehru Technological University-Hyderabad)

ELLENKI COLLEGE OF ENGINEERING AND TECHNOLOGY

(Affiliated to Jawaharlal Nehru Technological University-Hyderabad)
2014-15
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
CERTIFICATE

This is to certify that the seminar entitled ARTIFICIAL RETINA USING THIN FILM
TRANSISTOR is a Presentation given by,

P.VIVEK

11C71A04A0

In partial fulfilment of the academic requirements of the award of the degree of Bachelor of
Technology in Electronics and Communications Engineering, submitted to the Department of
Electronics and Communications Engineering, Ellenki College of Engineering and Technology,
Hyderabad during the period 2014-15.

T. SRAVAN KUMAR
HOD(ECE)

EXTERNAL EXAMINER

DECLARATION

I hereby declare that the SEMINAR entitled ARTIFICIAL RETINA USING THIN FILM
TRANSISTOR is the Technical seminar by me at ECET during the academic year 2014-15 and is
submitted in partial fulfilment of the requirement for the award for degree of Bachelor of Technology in
Electronics and Communication Engineering from JAWAHARLAL NEHRU TECHNOLOGICAL
UNIVERSITY, HYDERABAD.

P.VIVEK
(11C71A04A0)

ACKNOWLEDGEMENT

With great pleasure I want to take this opportunity to express my heartfelt gratitude to all the
people who helped in making this seminar work a grand success.

I am highly indebted to Principal Dr. SUKDEO SAHO for giving me the permission to carry out
this seminar.

And with deep sense of gratitude and I would like to thank Mr. T. SRAVAN KUMAR, Head of
the Department of Electronics and Communications Engineering, for his constant support throughout the
period of our study in ECET.

I would like to thank the Teaching & Non-teaching staff of Department of Electronics & Communication
Engineering for sharing their knowledge with us.

I would also like to express my heartfelt and sincere thanks to my parents who have been
constantly backing us at every stage of my life.
P.VIVEK

ABSTRACT
For those millions of us whose vision is not perfect, there are glasses. But for those hundreds of
thousands who are blind devices that merely assist the eyes just arent enough, what they need
are alternative routes by which the sights of world can enter the brain .Technology has created
many path ways for the mankind. Now technology has improved to that extent where in the body
can be controlled using a single electronic chip. Now it is the turn of artificial vision through
artificial retina. Chips designed specially to imitate the characteristics of retina and the cones
rods of organs of sight are implanted with a microsurgery
Artificial retinas have been desired to recover the sight sense for sight handicapped people.
Recently, artificial retinas using external cameras, stimulus electrodes, and three dimensional
large scale integrations (LSIs) have been actively developed for patients suffering from retinitis
pigmentosa and age related muscular degeneration. So in this seminar, we will discuss about the
possibilities of artificial retina using thin film transistors (TFTs), which can be fabricated on
transparent and flexible substrates. Electronic photo devices and circuits are integrated on the
artificial retina, which is implanted on the inside surface of the living retina at the back part of
the human eyeballs. In addition wireless power supply is used to drive the object. This helps to
eliminate the connection wires and to realize complete artificial internal organs to improve the
quality of life.

CONTENTS

CHAPTER 1
INTRODUCTION............. 09
Visual System
Retina
Artificial retina
Retinal implant
Epiretinal Implant
Subretinal Implant

CHAPTER 2
ARTIFICIAL RETINA USING THIN FILM TRANSISTOR. 12
Thin-film transistor
Artificial retina using thin film transistor
Fabrication of thin film phototransistors
ION Doping Techniques
Self Aligned structure and TFT characteristics
New Masking technique and CMOS Process
Device characterization of p/i/n Thin- film phototransistors for photo sensor applications
Electrooptical Measurement

CHAPTER 3

WIRELESS POWER SUPPLY USING INDUCTIVE COUPLING16

Introduction
Working

CHAPTER 4
SUMMARY...xx

CHAPTER 5
CONCLUSION..56

CHAPTER 6
REFERENCES45

LIST OF FIGURES
1.1VISUAL SYSTEM
1.2 RETINA
2.1RETINAL ARRAY
2.2RETINAL ARAY WITH RETINA PIXEL
2.3WORKING OF ARTIFICIAL RETINA
2.4MODEL OF THE ARTIFICIAL RETINA FABRICATED ON A TRANSPARENT AND
FLEXIBLE SUBSTRATE AND IMPLANTED USING EPIRETINAL IMPLANT
2.5SCHEMATIC DIAGRAM OF THE NEW ION DOPING SYSTEM
2.6SCHEMATIC CROSS SECTIONAL VIEWS OF A SELF ALIGNED AND A NON SELF
ALIGNED TFT
2.7THE CHARACTERISTICS OF S/A TFT ALIGNED AND A NON SELF ALIGNED TFT
P/I/N TFPT
2.8ELECTRO OPTICAL MEASUREMENT
2.9ELECTROOPTICAL CHARACTERISTIC
3.1POSSIBLE COIL LOCATIONS
3.2WIRELESS POWER SUPPLYWITH INDUCTIVE COIL
4.1 DETECTED RESULT OF IRRADIATED LIGHT

Chapter 1
INTRODUCTION

The ability to interpret the surrounding environment by processing information that is contained
in visible light is called eyesight, sight, or vision The various components involved in vision are
referred to collectively as the visual system

VISUAL SYSTEM
The act of seeing starts when the lens of the eye focuses an image of its surroundings onto a
light-sensitive membrane in the back of the eye, called the retina. The retina is actually part of
the brain that is isolated to serve as a transducer for the conversion of patterns of light into
neuronal signals. The lens of the eye focuses light on the photoreceptive cells of the retina, which
detect the photons of light and respond by producing neural impulses. These signals are
processed in a hierarchical fashion by different parts of the brain, from the retina upstream to
central ganglia in the brain.

fig1.1

RETINA
The retina (/rtn/ RET-i-n, pl. retinae, /rtini/; from Latinrte, meaning "net") is a lightsensitive layer of tissue, lining the inner surface of the eye. The optics of the eye create an image
of the visual world on the retina (through the cornea and lens), which serves much the same
function as the film in a camera. Light striking the retina initiates a cascade of chemical and
electrical events that ultimately trigger nerve impulses. These are sent to various visual centers of
the brain through the fibers of the optic nerve The only neurons that are directly sensitive to light
are the photoreceptor cells. These are mainly of two types: the rods and cones. Rods function
mainly in dim light and provide black-and-white vision, while cones support daytime vision and
the perception of colour.

fig1.2

ARTIFICIAL RETINA
Artificial retina may refer to functioning implant designed to restore sight or this is an electronic
device that could translate images and electrical pulses that could restore vision. These have been
designed to recover the sight sense for sight handicapped people. Here electronic photo devices
and circuits substitute for deteriorated photoreceptor cells. These devices are implanted inside the
eyes which is called retinal implant or retinal prothesis

RETINAL IMPLANTATION
A retinal implant is a biomedical implant technology currently being developed by a research
institutions worldwide The implant is meant to restore useful vision to people who have lost their
vision due to degenerative eye conditions such as retinitis pigmentosa (RP) or macular
degeneration. There are three types of retinal implants currently in clinical trials: epiretinal
Implants (on the retina), subretinal Implants (behind the retina), and suprachoroidal
implants (above the vascular choroid). Retinal implants provide the user with low resolution
images by electrically stimulating surviving retinal cells. Such images may be sufficient for
restoring specific visual abilities, such as light perception and object recognition.
The Argus II retinal implant has received market approval in the USA in Feb 2013 and in Europe
in Feb 2011, becoming the first approved implant. The device may help adults with RP who have
lost the ability to perceive shapes and movement to be more mobile and to perform day-to-day
activities. The subretinal device is known as the Retina Implant and was originally developed in
Germany. It completed a multi-centre clinical trial in Europe and was awarded a CE Mark in
2013, making it the first wireless subretinal device to gain market approval

EPIRETINAL IMPLANT
Epiretinal implants sit in the inner surface of the retina The epiretinal implant requires an
external video camera to acquire images The camera receives an image of the surrounding
environment, processes the image, and communicates the image information to the implanted
electrode array wirelessly via telemetry. An external transmitter is also required to provide
continuous power to the implant via radio-frequency induction coils or infrared lasers. The

external camera and image processing chip are generally mounted onto eyeglasses for the
patient.[3] The image processing involves reducing the resolution of the image and converting the
image into a spatial and temporal pattern of stimulation to activate the appropriate retinal cells.[4]
[12]

The epiretinal implant system must be capable of processing images in real time to prevent

any noticeable delays between the camera input and retinal stimulation, which could confound
visual perception. Epiretinal implants are advantageous as they bypass a large portion of the
retina. The epiretinal implants could provide visual perception to individuals with retinal diseases
extending beyond the photoreceptor layer The majority of electronics can be incorporated into
the associated external components, allowing for a smaller implant and simpler upgrades without
additional surgery. The external electronics also allow a doctor to have full control over
the image processing and adapt the processing for each patient. Additionally, the location of
epiretinal implants allows the vitreous humor to serve as a heat sink for the implant

SUBRETINAL IMPLANT
Subretinal implants sit on the outer surface of the retina, between the photoreceptor layer and the
retinal pigment epithelium, directly stimulating retinal cells and relying on the normal processing
of the inner and middle retinal layers. It has a simpler design .It replace damaged rods and cones
by Silicon plate carrying 1000s of light-sensitive micro photodiodes each with a stimulation
electrode. Light from image activates the micro photodiodes, the electrodes inject currents into
the neural cells. Among the above implant methods, the epiretinal implant has features that the
image resolution can be high because the stimulus signal can be directly conducted to neuron
cells and that living retinas are not seriously damaged. Trade off for the two types is that,
Subretinal Implant uses the entire retina (except the rods/cones). Epiretinal Implant does not; it
must replace the function of entire retina and convert light to neural code. But the input to the
Epiretinal Implant is more easily controlled (external camera)

Chapter 2
ARTIFICIAL RETINA USING THIN FILM TRANSISTORS
THIN-FILM TRANSISTOR
A thin-film transistor (TFT) is a special kind of field-effect transistor made by depositing thin
films of an active semiconductor layer as well as the dielectric layer and metallic contacts over a
supporting (but non-conducting) substrate

ARTIFICIAL RETINA USING THIN FILM TRANSISTORS

Artificial Retina using Thin-Film Transistors (TFTs) is fabricated on transparent and flexible
substrates; it uses the same fabrication processes as conventional poly-Si TFTs and encapsulated
using SiO2, in order to perform in corrosive environments. Although the artificial retina is
fabricated on the glass substrate here to confirm the elementary functions, it can be fabricated on
the plastic substrate. The artificial retina using TFTs is shown in Figure

fig2.1

fig2.2
The retina array includes matrix-like multiple retina pixels. Although large contact pads are
located for fundamental evaluation, a principal part is 27 300 cm2, which corresponds to 154 ppi.

The retina pixel consists of a photo transistor, current mirror, and load resistance. The photo
transistor is optimized to achieve high efficiency, and the current mirror and load resistance are
designed by considering the transistor characteristic of TFTs. The photosensitivity of the reversebiased p/i/n poly-Si phototransistor is 150 pA at 1000 lx for white light and proper values for all
visible color lights. The field effect mobility and the threshold voltage of the n-type and p-type
poly-Si TFT were 93 cm2 V -1s-1 , 3.6 V, 47 cm2 V -1s-1 and -2.9 V, respectively. First, the
photo transistors perceive the irradiated light (Lphoto) and induce the photo-induced current (Iphoto).
Next, the current mirror amplifies Iphoto to the mirror current (Imirror). Finally, the load resistance
converts Imirror to the output voltage (Vout). Consequently, the retina pixels irradiated with bright
light output a higher Vout, whereas the retina pixels irradiated with darker light output a lower
Vout.

fig2.3

Electronic photo devices and circuits are integrated on the artificial retina, which is implanted on
the inside surface of the living retina at the back part of the human eyeballs. Since the irradiated
light comes from one side of the artificial retina and the stimulus signal goes out of the other
side, the transparent substrate is preferable. The concept model of the artificial retina fabricated
on a transparent and flexible substrate and implanted using epiretinal implant is shown in Figure

fig2.4

FABRICATION OF THIN FILM PHOTOTRANSISTORS

Low temperature poly-Si TFTs have been developed in order to fabricate active matrix LCDs
with integrated drivers on large glass substrates. For integrated drivers, CMOS configurations are
indispensable. Self-aligned TFTs are also required because of their small parasitic capacitance
which can realize high speed operation. Since ion implantation is one of the key factors in
fabricating such as TFTs and CMOS configurations, several non-masses separated I/D
techniques are proposed. These techniques, however, are not suitable for conventional poly-Si
TFT processes and cannot be applied to large glass substrates, especially those over 300 mm
square.

ION DOPING TECHNIQUES

Figure shows a schematic diagram of the new I/D system which is one of the non-mass-separated
implanters. 5 percent PH3 or 5 percent B2H6 diluted by hydrogen is used for the doping gas and an
RF plasma is formed in the chamber by RF power with a frequency of 13.56 MHz Ions from
discharged gas are accelerated by an extraction electrode and an acceleration electrode and are
implanted into the substrate. Main features of this system are:
1) A large beam area (over 300 mm square)

2) A high accelerating voltage (maximum: 110 KeV)

With this system, impurities can be implanted over the entire 300 mm square substrate with a
maximum accelerating voltage of over 110 KeV which is sufficient for implanting impurities
through the 150nm SiO2 gate insulator. On the other hand, the conventional non-mass-separated
I/D techniques are severely limited in beam area, which is about 150 mm in diameter.
Furthermore, they are incapable of implanting impurities through the gate insulator since the
accelerating voltages are less than 10 KeV. Consequently, the gate insulator must be removed
prior to implantation, which can result in failure from surface contamination or breakdown
between gate electrodes and source and drain regions.

fig2.5

SELF ALIGNED STRUCTURE AND TFT CHARACTERISTICS

S/A TFTs and non-S/A TFTs with 25 nm thick as-deposited channel poly-Si r31 were fabricated
on the glass substrates, and the new I/D technique was used to achieve a self-aligned structure.
Schematic cross sectional views of a S/A TFT and a non-S/A TFT are illustrated in Figure 2.4(a)

and 2.4(b), respectively. Since the parasitic capacitance between the gate electrode and source
and drain regions of a S/A TFT is estimated to be only about 2 -5 percent that of a non-S/A TFT,
high speed operation can be expected.

fig2.6

fig2.6
The characteristics of S/A TFTs are compared with those of non-S/A TFTs. The comparisons in
the n-channel and the p-channel TFTs are shown in Figure and Figure, respectively. In these
experiments, it is found that the characteristics of S/A and non-S/A TFTs are similar, and
mobility of the n-channel TFTs are around 5 cm2/V-sec while those of the p-channel TFTs are
around 3 cm2/V.sec. It should be noted that no degradation can be observed as a result of using
the new I/D technique.

NEW MASKING TECHNIQUE AND CMOS PROCESS

A non-resist-masking process, however, is required when the CMOS configuration is fabricated
using the new I/D technique, since the temperature of the substrate reaches about 300oC due to
the high accelerating voltage. In order to solve this problem, a new masking technique is also
proposed. In this process, n-channel gate electrodes and p-channel gate electrodes are formed
separately in a sequential manner. In the process sequence for the CMOS configuration, An SiO2
buffer layer is deposited on the glass substrate to protect TFTs from contamination from
components of the glass. Then, pad poly-Si patterns are formed for source and drain regions,
which are made of a 150 nm poly-Si film. A 25 nm channel poly-Si layer is deposited by low
pressure chemical vapor deposition (LPCVD) at 600oC. Thinner poly-Si film gives better
electrical characteristics such as high ON current, low OFF current and low photo-current. After

patterning of the channel poly-Si layer, a 150 nm SiO2 gate insulator is deposited by electron
cyclotron resonance chemical vapor deposition (ECRCVD) at 100oC in a vacuum. Then, a Cr
film is deposited at 180oC. First, only p-channel gate electrodes are formed. The next step is to
form source and drain regions of p-channel TFTs by the new I/D technique. Boron ions are
implanted through the gate insulator with a dose of 5 x 1015 cm-2 at energy of 80 keV. Nchannel gate electrodes are also formed and phosphorus ions are implanted with a dose of
3x1015 cm-2 at energy of 110 keV by the new I/D technique Impurities are activated by a XeCl
excimer laser.

DEVICE CHARACTERIZATION OF P/I/N THIN- FILM

PHOTOTRANSISTORS FOR PHOTO SENSOR APPLICATIONS
Thin-Film photo devices are promising for photo sensor applications, such as ambient light
sensors, image Scanners, artificial retinas etc. Here thin-film photo devices are integrated with
low-temperature poly-Si thin-film transistors. The p/i/n TFPT is shown in Figure. 2.7. The p/i/n
TFPT is fabricated on a glass substrate using the same fabrication processes as TFTs which were
discussed earlier. First, an amorphous-Si film is deposited using low-pressure chemical-vapor
deposition of Si2H6 and crystallized using XeCl excimer laser to form a poly-Si film, whose
thickness is 50 nm. Next, a SiO2 film is deposited using plasma-enhanced chemical-vapor
deposition of tetraethylorthosilicate to form a control-insulator film, whose thickness is 75 nm. A
metal film is deposited and patterned to form a control electrode. Afterward, phosphorous ions
are implanted through a photo resist mask at 55 keV with a dose of 2 1015 cm-2 to form an ntype anode region, and boron ions are also implanted through a photo resist mask at 25 keV with
a dose of 1.5x1015 cm-2 to form a p-type cathode region. Finally, water-vapor heat treatment is
performed at 400oC for 1 h to thermally activate the dopant ions and simultaneously improve the
poly-Si film, control-insulator film, and their interfaces. The p/i/n TFPT must be illuminated
from the backside of the glass substrate because the control electrode is usually formed using an
opaque metal film. Therefore, the other LTPS TFTs are also illuminated when the p/i/n TFPT is
integrated with them. However, the photo leakage current in the LTPS TFTs can be negligible by

appropriately designing them, i.e., he gate width should be wide for the p/i/n TFT, whereas
narrow for the LTPS TFTs.

fig2.7

ELECTROOPTICAL MEASUREMENT

fig2.8
The electro optical measurement is shown in Figure.. The p/i/n TFPT is located on a rubber
pacer in a shield chamber and connected via a manual prober to a voltage source and ampere
eter. White light from a halogen lamp is formed to be parallel through a convex lens, reflected by
triangular prism and irradiated through the glass substrates to the back surfaces of the p/i/n
TFPT. Although the light from a halogen lamp includes the light from 400 to 750 nm with a peak
around 600 nm and is therefore reddish despite a built-in infrared filter, the conclusion in this
research is generally correct. The electric current between the n- and p-type regions is detected
with changing the applied voltage and irradiated illuminance. The electrooptical characteristic is
shown in Figure.2.9. First, it is found that the dark current, Idetect when Lphoto = 0, is sufficiently
small except when Vctrl and Vapply are large. The reason is because the p/i and i/n junctions
steadily endure the reverse bias. This characteristic is useful to improve the S/N ratio of the p/i/n
TFPT for photo sensor applications. Next, Idetect increases as Lphoto increases. This characteristic is
also useful to acquire fundamental detectability. Finally, Idetect becomes maximal when Vctrl Vapply.
This reason is discussed below:
When Vctrl 0, since Vctrl in the entire intrinsic region, a hole channel is induced, and a pseudo
p/n junction appears near the anode region. Since a depletion layer is narrowly formed there,

where carrier generation occurs due to light irradiation, Idetect is small. When Vctrl is approximately
equal to 0, although a hole channel is still induced, since Vctrl is approximately equal to near the
cathode region, the hole density is low there, which is similar to the pinch off phenomena in the
saturation region of MOSFETs. Since another depletion layer is widely formed there, Idetect is
large. When 0 Vctrl Vapply, since Vctrl on the side of the cathode region, an electron channel is
induced there. At the same time, since Vctrl on the side of the anode region, a hole channel is still
induced there. Since the depletion layer is widely formed between the electron and hole
channels, Idetect is large. When Vctrl is approximately equal to Vapply, although an electron channel
is further induced, since Vctrl is approximately near the anode region, the electron density is low
there. Since the depletion layer is widely formed there, Idetect is large. Since generated carriers are
transported through the electron channel with high conductance instead of the hole channel, Idetect
becomes maximal. When Vapply Vctrl, since Vctrl in the entire intrinsic region, an electron
channel is further induced, and a pseudo p/n junction appears near the cathode region. Since
another depletion layer is narrowly formed there, Idetect is small. The anomalous increases of Idetec
when Vctrl and Vapply are large may be caused by the impact ionization and avalanche breakdown
in the depletion layers. The asymmetric behavior, for example, comparing Vctrl = 2 and + 5 V for
Vapply =3 V, may be occasioned by the difference of electric field because the hole density when
Vctrl = 2 V and donor density

fig2.9

Chapter 3
WIRELESS POWER SUPPLY USING INDUCTIVE COUPLING
INTRODUCTION
Many implanted electrical power to function; be it in the form of an implanted battery or via
wireless power transmission. It is often advantageous to develop methods for wireless power
transmission to an implant located deep inside the body as replacement of batteries which
requires additional surgery is undesirable. An example of this is a retinal prosthesis. A retinal
prosthesis can create a sense of vision by electrically stimulating intact neural cells in the visual
system of the blind. Such prosthesis will require continuous power transmission in order to
achieve real-time moving images. Efficient transmission of power is a performance limiting
factor for successful implementation of the prosthesis. We estimate that a high density electrode
array with more than 1000 electrodes will consume about 45 mW of power. This includes 25
mW to operate the electronics on the chip and an additional 20 mW for neuronal stimulation with
a 3.3 V stimulation threshold. The latter is calculated based on 64 simultaneously operating
electrodes each requiring a maximum of 0.3 mW at 60 Hz image refresh rate.

fig3.1
Inductive coupling of magnetic field is an efficient way for transmitting energy through tissue.
This is because electrical energy can be easily converted to magnetic energy and back using
conductive coils. Traditionally, a pair of inductive coils; a primary (transmit) and a secondary
(receive) coils, are used. The secondary coil can be located within the eye and the primary coil
external to the eye. However, several problems will arise if we implement this method. The first
problem is difficulty in placing a large receive coil inside the eye. This will require complicated
surgical procedure, often a major challenge in implementing a wireless power solution. The other
problems we face are large separation between the coils and the constant relative motion between
the primary and secondary coils. The latter problems result in reduction in power transfer to the
device. In order to overcome these problems we propose the use of an intermediate link between
the primary and secondary coil as shown in Figure 3.1. In this figure we show the possible
locations for one-pair coils and a two pair coils system which consists of an additional
intermediate link made out of a pair of serially connected coils. In this method, the secondary
coil is located under the sclera (eye wall) and is connected to the implanted device via electrical
wires which are embedded under the wall of the eye. By placing these components under the
sclera, we avoid having a permanent wire breaching through the eye wall. The transmit coil is
placed on the skin of the head at an inconspicuous location, for example at the back of the ear.
The intermediate coils are positioned with one end on the sclera over the receive coil and the
other end under the skin beneath the transmit coil. The advantage of this method is immunity to
variation in coupling due to rapid movements of the eye as relative motion between adjacent
coils is restricted. It also has the potential to increase the power transfer efficiency compared to a
one-pair coil system.

WORKING

fig3.2

The wireless power supply using inductive coupling is shown in Figure 3.2. The right graph in
Figure 3.2. is a measured stability of the supply voltage. This system includes a power
transmitter, power receiver, Diode Bridge, and Zener diodes. The power transmitter consists of
an ac voltage source and induction coil. The Vpp of the ac voltage source is 10 V, and the
frequency is 34 kHz, which is a resonance frequency of this system. The material of the
induction coil is an enameled copper wire, the diameter is 1.8 cm, and the winding number is 370
times. The power receiver also consists of an induction coil, which is the same as the power
transmitter and located face to face. The diode bridge rectifies the ac voltage to the dc voltage,
and the Zener diodes regulate the voltage value. The Diode Bridge and Zener diodes are discrete
devices and encapsulated in epoxy resin. Although the current system should be downsized and
bio-compatibility has to be inspected, the supply system is in principle very simple to implant it
into human eyeballs. As a result, the generated power is not so stable as shown in Figure 3.2.,
which may be because the artificial retina is fabricated on a insulator substrates, has little
parasitic capacitance, and is subject to the influence of noise. Therefore, it is necessary to
confirm whether the artificial retina can be correctly operated even using the unstable power
source.

Chapter 4
SUMMARY
The artificial retina using poly-Si TFTs and wireless power supply using inductive coupling are
located in a light-shield chamber, and Vout in each retina pixel is probed by a manual prober and
voltage meter. White light from a metal halide lamp is diaphragmmed by a pinhole slit, focused
through a convex lens, reflected by a triangular prism and irradiated through the glass substrate
to the back surfaces of the artificial retina on a rubber spacer. The real image of the pinhole slit is
reproduced on the back surface. Figure shows the detected result of irradiated light. It is
confirmed that the Lphoto distribution can be reproduced as the Vout distribution owing to the
parameter optimization of the wireless power supply system even if it is driven using the
unstable power source, although shape distortion is slightly observed, which is due to the
misalignment of the optical system or characteristic variation of TFTs.

fig4.1

It was found that the Lphoto profile can be correctly detected as the Vout profile even if it is driven
using unstable power source generated by inductive coupling, Diode Bridge, and Zener diodes.
In order to apply the artificial retina to an actual artificial internal organ, we should further
develop a pulse signal generator appropriate as photorecepter cells, consider the interface
between the stimulus electrodes and neuron cells, investigate the dependence of Vout on Lphoto,
which realizes grayscale sensing, etc. However, the above result observed, shows the feasibility
to implant the artificial retina into human eyeballs.

Chapter 5
CONCLUSION

With this technology there is an pulse signal generator appropriate as photoreceptor cells

for implementation.
There is feasibility to implant the artificial retina into human eyeballs and
At most the artificial retina restores sight to the blind

Chapter 6
REFERENCES
Yuta Miura, Tomohisa Hachida, and Mutsumi Kimura, Member, IEEE , Artificial Retina Using
Thin-Film Transistors Driven by Wireless Power Supply IEEE SENSORS JOURNAL, VOL. 11,
NO. 7, JULY 2011.
M. Kimura, Y. Miura, T. Ogura, S. Ohno, T. Hachida, Y. Nishizaki, T. Yamashita, and T.Shima,
Device characterization of p/i/n thinfilm phototransistor for photosensor applications, IEEE
Electron Device Lett., vol. 31, no. 9, pp. 984986, 2010 Satoshi Inoue, Minoru Matsuo, Tsutomu
Hashizume, Hideto Ishiguro, Takashi Nakazawa, and Hiroyuki Ohshima, LOW
TEMPERATURE CMOS SELF-ALIQNED POLY-Si TFTS AND CIRCUIT SCHEME
UTILIZING NEW ION DOPING AND MASKING TECHNIQUE www.ieeexplore.ieee.org.
David C. Ng, Chris E. Williams, Penny J. Allen, Shun Bai, Clive S. Boyd, Hamish Meffin,
Mark E. Halpern, and Efstratios Skafidas wireless power delivery for retinal prosthesis , 33rd
Annual International Conference of the IEEE EMBS Boston, Massachusetts USA, August 30 September 3, 2011
T. Tokuda, K. Hiyama, S. Sawamura, K. Sasagawa, Y. Terasawa, K.Nishida, Y.Kitaguchi, T.
Fujikado, Y. Tano, and J. Ohta, CMOS-based
multichip networked flexible retinal stimulator designed for image-based
retinal prosthesis, IEEE Trans. Electron Devices, vol. 56, no. 11,