Professional Documents
Culture Documents
Frequency Technique
Guolin Sun, Rolf H. Jansen, Fellow, IEEE
I. I NTRODUCTION
G. Sun and R.H. Jansen are with the Chair of Electromagnetic Theory, RWTH Aachen University, Aachen, Germany. e-mail: (gs@ithe.rwthaachen.de; rhj@ithe.rwth-aachen.de).
Fig. 1.
(2)
f (p) = f0 + f1 p + f2 p2 + . . . + fn pn
(3)
g(p) = g0 + g1 p + g2 p + . . . + gn p
(4)
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
(5)
2 S
S21
G
2
(1S11 SG ) )SL |
SL2 )|f (p)|2
|1 S11 SG |2 |1 (S22 +
2
(1 SG
)(1
(6)
|g(p) h(p)SG + SL (h(p) SG g(p))|2
(b) Respective design and optimization of the carrier and peaking power
amplifiers at the saturation power level
(c) Assembly of the Doherty power amplifier at the saturation power level
Fig. 2. Block diagram explaining the design procedure associated with the
back-off optimization method (option I).
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Crees
products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or
promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
Dc Zopt,C,H Bc
Ac Cc Zopt,C,H
(8)
(11)
(12)
|IC,J,H | cos(ZC,J,H )
PC,H = {
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any
of Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing
to pubs-permissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
(a) Respective design and optimization of the carrier and peaking power
amplifiers at the saturation power level
(c) Re-optimization of the output matching work of the carrier amplifier at the
saturation power level to compensate the influence of the impedance inverter
(d) Assembly of the Doherty power amplifier at the back-off power level
Fig. 3. Block diagram explaining the design procedure associated with the
saturation optimization method (option II).
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
Fig. 4.
(a) Impedance transformation from the fre- (b) Impedance transformaquency dependent impedance ZL1
tion from the frequency independent impedance ZL2
Fig. 6. Investigation of the influence of the quarter-wave impedance inverter:
Optimization of the output matching network to compensate the influence of
the quarter-wave impedance inverter.
Z0
Z0 R0 + j 2 tan l
ZL,J = Z0
2 2 + jR0 tan l
IP,J,H
) = 2ZL,J
IC,J,H
ZC,J + jZ0 tan l
= Z0
Z0 + jZC,J tan l
ZC,J = ZL,J (1 +
ZL1
(20)
(21)
(22)
The influences of the impedance inverter over the specified frequency range is included in the frequency dependent
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
(a) Version I
(b) Version II
Fig. 10.
Simulated second-harmonic loadpull contours of output
power and drain efficiency applying fundamental and harmonic impedance
Zf und,2.3GHz = 24.972 + j8.149 Ohm, Zf und,2.9GHz = 24.645 +
j6.724 Ohm and Z3rd,2.3GHz = Z3rd,2.9GHz = 50 Ohm.
Fig. 11.
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
Fig. 12.
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Crees
products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or
promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
Fig. 15. Measured and simulated drain efficiency at the saturation and the
5-6 dB back-off output back-off power levels with CW signal.
Fig. 18. Measured drain efficiency of the broadband Doherty power amplifier
(Version II) with CW signal.
Fig. 16. Measured and simulated output power at the saturation and the 5-6
dB back-off output back-off power levels with CW signal.
Fig. 19. Measured gain of the broadband Doherty power amplifier (Version
I) with CW signal.
Fig. 17. Measured drain efficiency of the broadband Doherty power amplifier
(Version I) with CW signal.
Fig. 20. Measured gain of the broadband Doherty power amplifier (Version
II) with CW signal.
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
10
IV. C ONCLUSION
The bandwidth limitations of a Doherty power amplifier
have been discussed with considering the output matching
networks of both sub-amplifiers by applying the real-frequency
technique. It reveals the generalized and novel bottlenecks
Fig. 25. Measured gain, drain efficiency and PAE with WiMAX signal at
2.6 GHz.
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Crees
products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or
promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
11
A PPENDIX A
S TABILITY CIRCLE DEFINITION FOR THE CASE OF
BACK - OFF OPTIMIZATION DESIGN METHOD
Sopt,C,H , SC,J,H and SL,J are the S parameters of Zopt,C,H ,
ZC,J,H and ZL,J with the norm impedance Z0 . SC,J,H can be
represented by Sopt,C,H with the knowledge of the S parameter
matrix of [SC ]:
Sc12 Sc21 SC,J,H
Zopt,C,H Z0
= Sc11 +
Zopt,C,H + Z0
1 Sc22 SC,J,H
ZC,J,H Z0
Sopt,C,H Sc11
=
=
ZC,J,H + Z0
(Sopt,C,H Sc11 )Sc22 + Sc12 Sc21
ZL,J Z0
=
(23)
ZL,J + Z0
Sopt,C,H =
SC,J,H
Fig. 26.
SL,J
Index
[5]
[6]e
[7]
[8]a,b
[9]b
[10]b
Version I
Version II
a
b
c
d
e
Specification
N.A.
30.3% PAE
40% DEd
40% DEc
40% DEd
31% PAEc
40% DEd
40% DEd
Frequency Range
2.5-2.7
2.5-2.7
1.7-2.1
1.65-2.25
1.7-2.6
1.5-2.14
2.3-2.825
2.2-2.96
Simulation results.
Uneven Doherty (Different transistors).
At 6-7 dB output power back-off level (OBO).
At 5-6 dB output power back-off level (OBO).
Direct input power splitting.
Transistor
GaN
HBT
LDMOS
GaN
GaN
GaN
GaN
GaN
Year
2007
2010
2010
2010
2011
2010
2011
2011
is obtained as:
Then the current modulation coefficient K
= ZC,J,H 1 = (1 + Sopt,C,H )(1 SL,J ) 1 (24)
K
ZL,J
(1 Sopt,C,H )(1 + SL,J )
ZC,J,H
=
=
K
1+SC,J,H
1SC,J,H Z0
(1+Sopt,C,H )(1SL,J )
(1Sopt,C,H )(1+SL,J )
(25)
ZP,J,H Z0
3SL,J + SC,J,H SL,J SC,J,H + 1
=
ZP,J,H + Z0
3SC,J,H + SC,J,H SL,J SL,J + 1
A Sopt,CH + B
(26)
=
C Sopt,CH + D
SP,J,H =
with:
2
D = Sc11 (SL,J + 3 + (1 SL,J ) Sc22 ) + (1 SL,J )Sc12
(27)
(28)
(29)
A PPENDIX B
D EFINITION OF PHASE DISPERSION WITH IN A GIVEN
FREQUENCY RANGE
Fig. 27 illustrates three convex curves representing frequency dependent impedances in the Smith chart, where the
arrows indicate the increasing frequency directions. , in Fig.
27(a), helps to determine the increasing frequency direction.
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
12
(a) ,
(b) Curve B
(c) Curve C
(d) 1 , 2
Fig. 27. Definition of the phase dispersion associated with the frequency
dependent impedances.
(30)
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Crees
products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or
promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
13
Rolf H. Jansen received his Ph.D. degree in Electrical Engineering 1975 from RWTH Aachen, Germany. Research work at Aachen followed as a Senior
Scientist (1976-1979) and as Associate Professor at
Duisburg University, Germany (1979-1986), also Senior Research Engineer in GaAs MMIC technology
with GEC Marconi, Caswell, GB (1986-1992). Since
1994 Chair of Electromagnetic Theory at RWTH
Aachen, then Dean of the EE & IT Faculty (20002004). Professor Jansen has a 30 years record of
service in the IEEE up to the level of Div. IV
Director (1995-1996) and Germany Section Chair (1997-1999). He is a Fellow
of the IEEE since 1989, a pioneer in microwave CAD and author or co-author
of ca. 250 technical papers in this field and in the area of GaN technology as
well as Organic LED (OLED) technology.
Copyright 2012 IEEE. Reprinted from IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 1, JANUARY 2012.
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Crees products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubspermissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.