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(Fig),
EXERCISES
1. For the signal-source representations shown in Figs.1.1 (a) and 1.1(b),
what are the open -circuit output voltages that would be observed? If, for
each, the output terminals are short-circuited (i.e., wired together),what
current would flow? For the representations to be equivalent, what must
the relationship be between vs ,is, and Rs?
2. Find the frequencies and of a sine-wave signal with a period of 1 ns.
3. The UHF (Ultra High Frequency) television broadcast band begins with
channel 14 and extends from 470 MHZ to 806MHZ. If 6 MHZ is
allocated for each channel, how channels can this band accommodate?
4. Consider a 4-bit digital word D = b 3b2b1b0 (see Eq.1.3) used to represent
an analog signal VA that varies between 0V and +15V.
(a) Give D corresponding to VA = 0V, 1V,2V, and 15V
(b)What change in VA causes a change from 0 to 1in: (i)b0,(ii)b1,
(iii)b2,and(iv)b3?
(c) If VA = 5.2 V, what do you expect D to be? What is the resulting
error in representation?
5. An amplifier operating from a single 15V supply provides a 12V peak-to
-peak sine-wave signal to a 1k load and draws negligible input current
from the signal source. The dc current drawn from the 15V supply is
8mA.What is the power dissipated in the amplifier, and what is the
amplifier efficiency?
6. A transducer characterized by a voltage of 1 V rms and a resistance of 1
M is available to drive a 10- load. If connected directly, what voltage
and power levels result at the load? If a unity-gain ( i.e., Avo = 1) buffer
amplifier with 1-M input resistance and 10- output resistance is
interposed between source and load, what do the output voltage and
power levels become? For the new arrangement find the voltage gain from
source form source to load, and the power gain ( both expressed in
decibels ).
7. An amplifier with a voltage gain of +40 dB, an input resistance of 10 k,
and an output resistance of 1k is used to drive a 1-k load. What is the
value of Avo? Find the value of power gain in dB.
8. For the cascade amplifier of Example 1.3, let VS be 1 mV. Find Vi1, Vi2,
Vi3, and VL.
9. Consider a current amplifier having the model shown in the second row of
Table 1.1. Let the amplifier be fed with a signal current-source i s having a
resistance Rs, and let the output be connected to a load resistance R L. Show
that the overall current gain is given by
10. Consider a transresistance amplifier having the model shown in the third
row of Table 1.1. Let the amplifier be fed with a signal current-source i s
having a resistance Rs, and let the output be connected to a load
resistance RL. Show that the overall current gain is given by
11. Consider a voltage amplifier having a frequency response of the lowpass STC type with a dc gain od 60 dB and a 3-dB frequency of 1000Hz.
Find the gain in dB at =10 Hz, 10kHz,100kHz, and 1MHz.
12. Consider the situation illustrated in Fig. 1.27. Let the output resistance of
the first voltage amplifier be 1k and the input resistance of the second
voltage amplifier (including the resistor shown) be 9k. The resulting
equivalent circuit is shown in Fig.E1.23 where Vs and Rs are the output
voltage and output resistance of the first amplifier, C is coupling
capacitor, and Ri is the input resistance of the second amplifier. Convince
yourself that V2/Vs is a high-pass STC function. What is the smallest
value for C that will ensure that the 3-dB frequency is not higher100 Hz?
13. Find the dynamic power dissipated in an inverter operated from a 5V
power supply. The inverter has a 2pFcapacitance load and is switched at
50MHz.
EXAMPLES
Chapter 3 Diodes
(Fig),
EXERCISES
1. For the circuit in Fig. 3.3(a), sketch the transfer characteristic O versus
I.
2. In the circuit of Fig. 3.3(a), let I have a peak value of 10V and 10V and
R = 1 k. Find the peak value of iD and the dc component of O.
3. Figure E3.5 shows a v for an ac voltmeter .It utilizes a moving-coil meter
that gives full-scale reading when the input average current flowing
through it is 1mA. The sine-wave voltage moving-coil meter has a 50-
resistance. Find the value of R that result in the meter indicating a fullscale reading when the input sine-wave voltage I is 20V peak-to-peak.
(Hint: The average value of half-sine waves is VP/.)
4. A silicon junction diode with n =1 has = 0.7V at I = 1mA. Find the
voltage drop at I = 0.1 mA and I = 10 mA.
5. The diode in the circuit of Fig. E3.9 is a large high-current device whose
reverse leakage is reasonably independent of voltage. If V = 1 V at 20,
find the value of V at 40 and at 0.
6. Consider a diode that is 100 times as large ( in junction area) as that
whose characteristics are displayed in Fig.3.12. If we approximate the
characteristics in a manner similar to that in Fig. 3.12 (but over a current
range 100 times as large), how would the model parameters V D0 and rD
change?
7. Repeat Exercise 3.4 using the 0.7-V-drop model to obtain better estimates
of I and V than those found in Exercise 3.4 (using the ideal- diode
model).
8. Consider a diode with n = 2 biased at 1 mA. Find the change in current as
a result of changing the voltage by (a) -20mV , (b) -10mV, (c) -5mV, (d)
+5mV, (e) +10mV, and (f) +20mV. In each case, do the calculations (i)
using the small-signal model and (ii) using the exponential model.
9. A zener diode whose nominal voltage is 10V at 10mA has an has an
incremental resistance of 50. What voltage do you except if the diode
current is halved? Doubled? What is the value of VZO in the zener model?
10. A shunt regulator utilizes a zener diode whose voltage is 5.1V at a
current of 50mA and whose incremental resistance is 7. The diode is
fed from a supply of 15-V nominal voltage through a 200 resistor. What
is the output voltage at no load? Find the line regulation and the load
regulation.
11. For the full-wave rectifier circuit in Fig. 3.26(a), neglecting the effect of
rD, show the following : (a) The output is zero for an angle of sin -1(VD/VS)
centered around the zero-crossing points of the sine- wave input. (b) The
average value (dc component) of O is VO(2/)Vs-VD. (c) The peak
current through each diode is (Vs-VD)/R. Find the fraction (percentage) of
each cycle during which O > 0, the value of VO, the peak diode current,
and the value of PIV, all for the case in which s is a 12-V (rms) sinusoid,
VD 0.7V, and R =100.
12.Derive the expressions in Eqs.(3.33),( 3.34),and(3.35).
13.Consider the operational rectifier or superdiode circuit of Fig. 3.31(a),
with R = 1 k. For I = 10mV, 1V, and -1V ,what are the voltage that
result at the rectifier output and at the output of the op amp? Assume that
the op amp is ideal and its output saturation at 12V. The diode has a 0.7V drop at 1-mA current, and the voltage drop changes by 0.1V per decade
of current change.
14. Assuming the diodes to be ideal, the transfer characteristic of the circuit
shown in Fig.E3.27.
15. Calculate the intrinsic carrier density ni at 250K,300K, and 350K.
16. Find the resistivity of (a) intrinsic silicon and (b) p-type silicon with NA
= 1016 /cm3. Use ni =1.51010/ cm3, and assume that for intrinsic silicon n
= 1350 cm2 /V.s. (Note that doping results in reduced carrier mobilites.)
17. For a pn junction with NA = 1017/ cm3 and ND = 1016 /cm3, operating at T =
300K, find (a) the value of Cjo per unit junction area (m2 is a convenient
unit here) and (b) the capacitance Cj at a reverse-bias voltage 0f 2 V,
assuming a junction area of 2500cm2 . Use ni =1.51010/ cm3, m=0.5, and
the value of VO found in Exercise 3.32 (VO = 0.728V).
18. Use PSpice investigate the operation of the voltage doubler whose
Capture schematic is shown in Fig.E3.35(a). Specifically, plot the
transient behavior the voltages 2 and out when the input is a sinusoid of
10-V peak and 1-kHz frequency. Assume that the diodes are of the
1N4148 type ( with Is = 2.682 nA, n= 1.836,Rs =0.5664, Vo= 0.5V, Cjo
=4pF, m = 0.333, T =11.54 ns, VZK = 100V,IZK = 100A).
EXAMPLES
For N =5, calculate VOH using the component values of the example circuit
discussed earlier (i.e., RB =10 k, RC =1k, VCC =5V). Note that this
arrangement is historically important, as a precursor to the TTL logic
form. It is called Resistor-Transistor Logic or RTL.
EXAMPLES
1. The transistor in the circuit of Fig. 5.15(a) has =100 and exhibits a BE of
0.7V at iC = 1mA. Design the circuit so that a current of 2 mA flows
through the collector and a voltage of +5V appears at the collector.
2. The transistor in Fig. 5.33 is specified to have in the range of 50 to 150.
Find the value of RB that results in saturation with an overdrive factor at
least 10.
3. We wish to analyze the circuit of Fig. 5.35(a) to determine the voltages at
all nodes and the current through all branches. Note that this circuit is
identical to that of Fig. 5.34 except that the voltage at the base is now
+6V. Assume that the transistor is specified to be at least 50.
4. We desire to analyze the circuit of Fig. 5.37(a) to determine the voltages
at all nodes and the current through all branches.
5. We want to analyze the circuit of Fig. 5.39 to determine the voltages at all
nodes and the current through all branches. The minimum value of is
specified to be 30.
6. We wish to analyze the circuit in Fig. 5.41(a) to determine the voltages at
all nodes and the current through all branches.
7. We wish to design the bias network of the amplifier in Fig. 5.44 to
establish a current IE = 1 mA using a power supply VCC = +12V. The
transistor is specified to have a nominal value of 100.
8. To gain more insight the operation of transistor amplifiers, we wish to
consider the waveforms at various points in the circuit analyzed in the
previous example. For this purpose assume that i has a triangular
waveform. First determine the maximum amplitude that i is allowed to
have. Then, with the amplitude of i set to this value, give the waveforms
of iB(t), BE(t), iC(t), andC(t).
9. A transistor amplifier is fed with a signal source having an open- circuit
voltage sig of 10mV and an internal resistance Rsig of 100 k. The voltage
i at the amplifier input and the output voltage o are measured both
without and with a load resistance RL = 10 k connected to the amplifier
output. The measured results are as follows:
Without RL
With RL connected
Vi(mV)
9
8
Vo(mV)
90
70
10. We wish to select appropriate value for CC1,CC2, and CE for the commonemitter amplifier whose high- frequency response was analyzed in