DIOTEC ELECTRONICS CORP.

Data Sheet No. BRDB-5000P-1B

ADBD-5000P-1B

18020 Hobart Blvd., Unit B

Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958

MECHANICAL SPECIFICATION

FEATURES

SERIES: DB5000P - DB5010P and ADB5004P - ADB5008P

VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM

MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)

Suffix "P" indicates molded PLASTIC with integrally mounted Heat Sink

Heat Sink
BH

BH

BUILT-IN STRESS RELIEF MECHANISM FOR

SUPERIOR RELIABILITY AND PERFORMANCE

LT

Molded
Body

INTEGRALLY MOLDED HEAT SINK PROVIDES VERY

LOW THERMAL RESISTANCE FOR MAXIMUM HEAT
DISSIPATION

Top View of
Heat Sink

HOLE FOR
#8 SCREW

D1

Molded
Body

LL

HOLE FOR
#8 SCREW

LD

UL RECOGNIZED - FILE #E141956

AC

AC

D1

D3 BL

Case: Molded plastic, U/L Flammability Rating 94V-0

BL D1

AC

AC

AC

D2

Terminals: Round silver plated copper pins or fast-on terminals

D2

AC

MECHANICAL DATA

D1
BL

BL

Soldering: Per MIL-STD 202 Method 208 guaranteed

Polarity: Marked on side of case
Mounting Position: Any. Through hole for #8 screw.
Max. mounting torque = 20 in-lb.
Weight: Fast-on Terminals - 0.7 Ounces (20.0 Grams)
Wire Leads - 0.55 Ounce (16.0 Grams)
Suffix "T" indicates FAST-ON TERMINALS

Suffix "W" indicates WIRE LEADS

MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.

RATINGS

PARAMETER (TEST CONDITIONS)

SYMBOL

CONTROLLED
AVALANCHE

UNITS

NON-CONTROLLED
AVALANCHE

ADB ADB ADB DB

DB DB DB
DB
DB
DB
5004P 5006P 5008P 5000P 5001P 5002P 5004P 5006P 5008P 5010P

Series Number
Maximum DC Blocking Voltage

VRM

Working Peak Reverse Voltage

VRWM

Maximum Peak Recurrent Reverse Voltage

VRRM

400

600

800

VR (RMS)

Mimimum Avalanche Voltage

V(BR) Min

See Note 1

V(BR) Max

See Note 1

Forward Voltage Drop (Per Diode) at 25 Amps DC

Max.
Typ.

Rating for Fusing (Non-repetitive; 1mS < t < 8.3mS

Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). TJ = 175O C
o

Average Forward Rectified Current @ TC = 55 C

Junction Operating and Storage Temperature Range

VFM

100

200

400

600

800 1000

VOLTS

RMS Reverse Voltage

Maximum Avalanche Voltage

50

280

420

1.00
0.95

560

35

70

140

280

420

560

700

n/a

VOLTS

n/a

1.05
1.00

1.00
0.95

1.05
1.00

A2SEC

I2t

1000

IFSM

600

IO

50

TJ, TSTG

-55 to +175

C
A
VOLTS

@ TA = 25o C
Maximum Reverse Current at Rated VRM
@TA = 125o C
Minimum Insulation Breakdown Voltage (Circuit to Case)

IRM

1
50

VISO

2500

Typical Thermal Resistance, Junction to Case

RJC

1.10

AMPS

C/W
3.01 50bdp

Notes: (1) These Bridges Exhibit The Avalanche Characteristic at Breakdown. If Your Application Requires a Specific Breakdown Voltage Range, Please Contact Us.

E51
This datasheet has been downloaded from http://www.digchip.com at this page

DIOTEC ELECTRONICS CORP.

Data Sheet No. BRDB-5000P-2A

ABDB-5000P-2A

18020 Hobart Blvd., Unit B

Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958

50 AMP SILICON BRIDGE RECTIFIERS

RATING & CHARACTERISTIC CURVES FOR SERIES DB5000P - DB5010P and SERIES ADB5004P - ADB5008P

700

60Hz Resistive or Inductive Loads

600

TJ = 175o C

500
400

300

200

100

10

Case Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE

1000

100

Number of Cycles at 60 Hz

FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT

10

ADB5004P-ADB5006P
DB5000P-DB5006P

100

TJ = 125O C
1.0

ADB5008P
DB5008P-DB5010P
10

0.1

1.0

TJ = 25 oC
Pulse Width = 300 S
1% Duty Cycle

0.1

TJ = 25O C

.01
0

Instantaneous Forward Voltage (Volts)

FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE

E52

20

40

60

80

100

120

140

Percent of Rated Peak Reverse Voltage

FIGURE 4. TYPICAL REVERSE CHARACTERISTICS

9.98bbrdb50p