5.

2 Single-Stub Matching

Matching using TL

Open or shorted stub (TL)

Zin = pure reactance
Yin = pure suceptance
t

L, C not required.
Hi h Q
High
Q-factor
f t (low
(l
loss)
l
)
Easy fabrication
Big size

if l < / 4, shorted stub is inductive

open stub
t b is
i capacitive
iti

Z=Z0jX
Y=Y0jB

Figure 5.4 (p. 229)

Single-stub tuning circuits
circuits.
(a) Shunt stub. (b) Series stub.
1

Not used in microstrip/CPW

Microwave Engineering, JJEONG

Example : shunt stub (short-circuited)

Ex 5.2) ZL=60-j80 to 50 ohm. Use short-circuited stub. 2 GHz

Y=Y0jB

Microwave Engineering, JJEONG

1st solution
d=0.425-0.315=0.110
y=1+j1 47 -j1
y=1+j1.47
j1.47
47 needed
Short-circuited stub l=0.095

2nd solution
d=0.5+0.075-0.315=0.260
y=1 j1 47 j1.47
y=1-j1.47
j1 47 needed
Short-circuited stub l= 0.405
3

Microwave Engineering, JJEONG

Solutions

Line length

Figure 5.5b (p. 231)

(b) The two shuntstub tuning solutions.
(c) Reflection
coefficient
magnitudes versus
frequency for the
tuning circuits of (b).

= =

metal loss
bandwidth
2
f
vp

2
=
f
vp

the longer l , the larger phase deviation

-> Use short line if p

possible

Microwave Engineering, JJEONG

How to Make Open/Short Stubs

Microstrip line
Open stub : preferred.
Short
Sh t stub
t b : via-hole
i h l needed.
d d

Coaxial cable and waveguide

Open stub : large size antenna
Short stub preferred.

Microwave Engineering, JJEONG

Analytic Solutions

Microwave Engineering, JJEONG

HW 5.1

Use ADS to solve the following problems

Small-signal equivalent circuit of MOSFET are shown below with parameter values. You
design an amplifier at 10 GHz using this MOSFET.
MOSFET A Z0 is 50 ohm
ohm.
1) Compute the input and output impedance (Zin and Zout) at 10 GHz. (Zin =10-j15.9, Zout
=7.6-j38.2)
2) Design input matching network using shunt C-series
C series L.
3) Design output matching circuit using series L-shunt C.
4) For the designed input/output matching circuits, find ZS and ZL. What relationship do ZS
and Zin have? What relationship
p do ZL and Zout have?
Small-signal equivalent circuit

G
Input matching
network

Z 0 = 50

Li

ZS

ZL

output matching
network

Lo

Ri

Co

Z 0 = 50

Ci
Vs

Z0

Z in

C gs

Vc

g mV c

R ds

C ds

R i = 10 R ds = 200
C gs = 1pF C ds = 0 . 4 pF

Z out

g m = 50 mS
7

Microwave Engineering, JJEONG

Remarks

Microwave Engineering, JJEONG

Quarter-wave Transformer
Z in

Z in = Z1

Z L + jZ1 tan l
Z1 + jZ L tan l
2

Z
Z in (l = / 4) = 1
ZL
matching : Z in = Z 0

Figure 5.10 (p. 241) A single-section quarter-wave

matching transformer.
= 0 / 4 at the design frequency f0.

Z1 = Z 0 Z L

Z L should be real.
series stub
shunt stub

ZL

TL

ZL

Z0

180 rotation

real axis

Real impedance to TL
Complex ZL : use TL/series/shunt stub first (bandwidth reduced)
Multi-section : broader bandwidth
9

Microwave Engineering, JJEONG

Multiple Reflections (1)

Find for the right figure (quarter-wave impedance transformer)
1)) Determine Zin
Z in = Z 2

Z L + jZ 2 tan
, =
Z 2 + jZ L tan

then, =

Z in Z 0
Z in + Z 0

Figure 5.13 (p. 244)

Partial reflections and transmissions on a
single-section matching transformer.
transformer

2) Multiple reflections
1 =

Z 2 Z1
Z Z2
Z Z2
= 1 , 3 = L
, 2 = 1
Z 2 + Z1
Z1 + Z 2
Z L + Z2

T21 = 1 + 1 =

2Z 2
Z1 + Z 2

T12 = 1 + 2 =

2 Z1
Z1 + Z 2
10

Microwave Engineering, JJEONG

Multiple Reflections (2)

assume Vinc=1

= 1 + T21e j 3e j T12 + T21 A2 AT12 + T21 A2 A2 AT12

A
= 1 + T21T12 A(1 + A2 + A2 22 +

= 1 + T21T12 3e j 2 2n 3n e j 2 n = 1 +
n =0

j 2

1 + 3e
1 + 13e j 2

T12T213e j 2
1 2 3e j 2

( 2 = 1 , T21 = 1 + 1 , T12 = 1 1 )
11

Microwave Engineering, JJEONG

Multiple Reflections (3)

=

1 + 3e j 2
1 + 13e j 2

/4 transformer

Z 2 = Z1 Z L

Z1 Z 2
=
Z2 ZL

1 = 3

e j 2 = e j = 1

1 1
= 0 (perfact matching )
1 12

For
F small
ll reflection
fl i , or 1 << 1, 3 << 1.
=

1 + 3e j 2
1 + 3e j 2
j 2
1 + 13e

/4 transformer

1 + 3e j 2 = 1 1 = 0

total reflection : determined by 1 , 3 and e j 2 .

Z1

ZL

Z2

/ 4 = 90

out of phase (180o)

cancel!
12

Microwave Engineering, JJEONG

Multiple Reflections (4)

Voltage across ZL
VL = T21e j + T21e j 3 + T21e j 3e j + T21e j 3e j 2 e j 3 +

= T21e j (1 + 3 ) 1 + 2 3e j +

) = T1 (1+e)e
21

j 2

2 3

( 4 transformer ) 1 = 3 ,
2
2
(
1 + 1 )
( j ) = j 1 + 1 VL = 1 + 1 = Z 2 = Z L
VL =
2
1 1
1 1
1 1 Z1 Z 2
for =

1 V
1 Z
1 1
power to load L = L2 = power from TL1 (Z1)
2 ZL
2 Z2
2 Z1

Thus, all power incident to Z1 Transmission line delivered to load ZL !

(
(

Z1 < Z 2 < Z 3 3 > 0, 2 < 0 e j 2 = 1 added in phase in the load

Z1 > Z 2 > Z 3 3 < 0, 2 > 0 e j 2 = 1 added in phase in the load

)
)

/4 transformer
reflected waves added out-of p
phase at the interface between Z1 and Z2 lines
incident waves added in-phase in the load ZL
13

Microwave Engineering, JJEONG

Anti-reflection Coatings

Comparison between a
glasses lens without antireflective coating (top) and
a lens with anti-reflective
anti reflective
coating (bottom). Note the
reflection of the
photographer in the top
lens and the tinted
reflection in the bottom.
14

Microwave Engineering, JJEONG

Anti-reflection Coatings - Transformer

Quarter-wave impedance transformation

Z 0 > Z1 > Z 2

1 < 0

Single layer coating :

eliminates the reflection at one wavelength
Multi-layer coatings :
eliminates the reflection over the visible spectrum.

15

Microwave Engineering, JJEONG

Refraction
refractive index n, n=c/vp
n = r r r for most materials, r 1 at optical frequencies.
(vp maybe greater than c,
c but vg can
cantt be greater than c)

n = r ~ 1 Z0

16

Microwave Engineering, JJEONG

Bandwidth of Quarter-wave Transformer (1)

At the design frequency of f0, the electrical length of the matching section is
0/4, but at other frequencies the length is different, so a perfect match is no
longer
g obtained.
Bandwidth of the transformer ?
Z in ( f ) = Z1

Z L + jZ1 tan
,
Z1 + jZ L tan

Z in Z 0 2
, Z1 = Z 0 Z L
Z in + Z 0

1 + [4 Z 0 Z L /( Z L Z 0 ) 2 ] sec 2
approximation : around design frequency,
frequency f 0
0
c

= , 0 =
2
sec >> 1
4
f0
2
2
Z Z0
= =
cos
L

2 Z0Z L
f
2
=

f =

f
f0
Figure 5.11 (p. 242)
Approximate behavior of the reflection
g
for a single-section
g
coefficient magnitude
quarter-wave transformer operating near its
design frequency.

2 f0

frequency
17

Microwave Engineering, JJEONG

Bandwidth of Quarter-wave Transformer (2)

Z0

/4

|| vs. f/f0 as a function of ZL/Z0

ZL

The ZL/Z0 closer to 1,

1 the wider bandwidth
(increased bandwidth for smaller load mismatches)
Use multi-section transformer for wider bandwidth

For allowable m, the fractional BW f/f0 is

given
i
b
by

2 Z0Z L
f
4
m

= 2 cos 1
f0

1 m2 Z L Z 0

Ex 5.5) /4-transformer from 10 to 50 at

3 GHz. Bandwidth for VSWR 1.5
Figure 5.12 (p. 243)
Reflection coefficient magnitude versus frequency
for a single
single-section
section quarter-wave
quarter wave matching
transformer with various load mismatches.

ans). Z1 = Z 0 Z L = 50 10 = 22.36
m =
18

VSWR 1
f
= 0.2,
= 0.29(29% )
VSWR + 1
f0
Microwave Engineering, JJEONG

Multi-section Transformer
Zn ?

Fi
Figure
5
5.14
14 ((p. 245)
Partial reflection coefficients for a
multisection matching transformer.

ZL

Z1

Z0

Single section
Lower ZL/Z0, wider bandwidth

ZL
= 10
Z0
single - section

Lets use 10-sections with a same impedance transformation

ratio for each section. Then,

Z1 Z 2
=
=
Z 0 Z1

ZL
=X
Z10

Z L = X 11Z 0 , X 11 = 10

X = 1.23
Multi-section low |Zn+1-Zn| broad bandwidth
19

Microwave Engineering, JJEONG

Binomial Multi-Section Transformer

ln

Z n +1
Z Z0 N
2 N L
Cn
Zn
Z L Z0

, CnN =

Maximally flat performance

N!
( N n)!n!

Figure 5.15 (p. 250)

Reflection coefficient magnitude versus frequency for
multisection
lti
ti bi
binomial
i l matching
t hi ttransformers
f
off E
Example
l
5.6 ZL = 50 and Z0 = 100.

20

Microwave Engineering, JJEONG

Chebyshev Multi-Section Transformer

Equi-ripple performance : optimize the
bandwidth at the expense of passband ripple.

Refer to Chebyshev table for Z n

(N : numbe of sections,
m : minimum allowable )

Figure 5.17 (p. 255)

Reflection
R
fl ti coefficient
ffi i t magnitude
it d versus ffrequency for
f the
th
multisection matching transformers of Example 5.7.

21

Microwave Engineering, JJEONG

Tapered Lines
Multi-section matching transformer
section # Z n +1 Z n BW
infinite # of sections
Z n +1 Z n 0

Continuously
C ti
l ttapered
d liline
=

Z + Z Z Z

Z + Z + Z 2Z

z 0, then d =

dZ 1
=
2Z 2

Z
)
Z0
dz
dz

d ln(

Theory of small reflection

( ) =

Figure 5.18 (p. 256)

A tapered transmission line matching
section and the model for an incremental
length of tapered line. (a) The tapered
transmission line matching section.
(b) Model for an incremental step change
in impedance of the tapered line.

1 z = L j 2 z d
Z
e
ln( )dz

z
=
0
dz Z 0
2

: Z (z ) ( )

22

Microwave Engineering, JJEONG

Tapered Lines : Exponential Taper

Exponential taper
Z (z ) = Z 0 e az for 0 < z < L

Z (0 ) = Z 0 , Z (L ) = Z L = Z 0 e aL
a=

1 ZL
ln
L Z0

1 L j 2 z d
(ln e az )dz
e
2 0
dz
ln Z L Z 0 jL sin
e
=
L
2
( assumed const. w.r.t z.
valid only for TEM lines.)

L > L >

small
Figure 5.19 (p. 257)
A matching section with an exponential
impedance taper. (a) Variation of impedance. (b)
Resulting reflection coefficient magnitude
response.

23

Microwave Engineering, JJEONG

Tapered Lines : Triangular Taper

Triangular Taper
2( z / L )2 lnl ZZL
L
0
for 0 z
Z 0 e

2
Z (z ) =
ZL
2
2
L
(4 z / L 2 z L 1)ln Z 0
for z L
Z 0 e
2
1
Z sin ( L / 2 )
( ) = e jL ln L
2
Z 0 L / 2

Figure 5.20
5 20 (p.
(p 258)
A matching section with a triangular
taper for d(In Z/Z0/dz. (a) Variation
of impedance. (b) Resulting
reflection coefficient magnitude
response.

24

Microwave Engineering, JJEONG

Tapered Lines : Klopfenstain Taper

Klopfenstain taper
which design is best? Klopfenstain taper
minimum || over the passband for a given length.

ln Z ( z ) =

0
1
ln Z 0 Z L +
A2 (2 z / L 1, A)
2
cosh A

I1 A 1 y 2

A 1 y2

( x, A) = ( x, A) =

) dy

for x 1.

I1 ( x ) : modified Bessel function.

( ) = 0 e

j L

cos

K : m = 0.02
for 1.13

(L )2 A2

for L > A.
cosh A
Z Z0 1 Z L
0 = at DC = L
ln
Z L + Z0 2 Z0

0
cosh A
Z ( z ) has steps at z = 0 and L.
max =

Figure 5.21 (p. 260) Solution to Example 5.8. (a) Impedance variations for the
triangular, exponential, and Klopfenstein tapers. (b) Resulting reflection coefficient
magnitude versus frequency for the tapers of (a).

25

Microwave Engineering, JJEONG

Bode-Fano Criterion (1)

Q = 0 RC

Theoretical limits of the performance of

the impedance matching network:
Can we achieve a perfect match over a
specified bandwidth?

Q=

If not, how
h
wellll can we d
do?
? Wh
What iis the
h
trade off between m, the maximum
allowable reflection in the passband, and
the bandwidth?

1
0 RC

Q=

How complex the matching network be

for a given specification?

R
0 L

Bode Fano limit

Q=

26

0 L
R

Microwave Engineering, JJEONG

Bode-Fano Criterion (2)

ex) Consider type (a ) and ( ) in right figure.

ln

1
1
1

d = ln
d = ln

m
m RC

m
m = 0
= 0 or perfect match
at a finite # of freq.
As RC increases, the quality of
match(,
( , 1/m ) must decrease.

ln

m Q

HigherQ circuits are intrinsically harder to

match than are lowerQ circuits.
Higher-Q load : narrower band impedance
matching.

Figure 5.23 (p. 263)

Illustrating the Bode-Fano criterion. (a) A possible
reflection coefficient response. (b) Nonrealizable and
p
realizable reflection coefficient responses.

Optimum case
||=m over the passband and ||=1 elsewhere like Fig
Fig. (a) (sharp transition)
but, impractical Chebyshev type
27

Microwave Engineering, JJEONG

Q-factor Lines on Smith Chart

Q-factor
Series elements : Q = Im[Z]/Re[Z]
Q of inductor : Ls/Rs
Rs

The lower Q, the wider bandwidth

Keep the Q low while impedance
transformation!!!

Ls

Q of capacitor : 1/(RsCs)
Rs

Cs

Parallel elements : Q = Im[Y]/Re[Y]

/
Q of inductor : Rp/Lp
Q of capacitor : RpCp
Rp

Lp

Rp

Cp
28

Microwave Engineering, JJEONG

Broadband Match Using Multi-Section

1.
2.
3
3.
4.

Shunt C-series L
Shunt L-series C
Series TL-series
TL series L
Series TL-shunt L

Which is the most broadband?

Think of the BW of
Series L-shunt
L shunt C-series
C series L-shunt
L shunt C-series
C series L
matching circuits.
29

Microwave Engineering, JJEONG

HW 5.2

bandwidth : HW 5.1

(S11, S21) .
( = 10 GH
GHz))

1.
2.
3
3.
4.
5.
6.

1 lumped elements
TL (series-L ) + lumped L or C
TL (series-L ) + stub
2 lumped elements
3 lumped elements
.

30

Microwave Engineering, JJEONG

Remarks

31

Microwave Engineering, JJEONG

Impedance Matching Using Transmission Lines

Lumped elements (L, C)

Low quality factor : high loss
Small size

Transmission lines
High quality factor : low loss
Easy fabrication : well-controlled
Big size

Can we replace the lumped elements with transmission lines?

32

Microwave Engineering, JJEONG

Impedance Synthesis using Short T/L (1)

Z0, l
Zin

Z in = Z 0

ZL

Z L + jZ 0 tan l
Z 0 + jZ L tan l

short-circuited TL, ZL = 0

for l < / 6, or l < / 12

Shunt L

Z in = jZ 0 tan
t l jZ 0 l = jZ 0l / v p = jLeq
Leq Z 0l / v p

inductive

Shunt C

open-circuited TL, ZL =

Z in = jZ 0 cot l = j / Ceq
Ceq l /(v p Z 0 )

capacitive
33

Microwave Engineering, JJEONG

Impedance Synthesis using Short T/L (2)

Series L
Z1 >> Z 0

Z in
Z1

Z0

Z0

Z in Z1

Z 0 + jZ1l
Z 0 + jZ1l
Z1 + jZ 0 l

Leq = Z1

l
vp

High impedance (Z1) line

inductive (series)
Z1 Leq

shunt C

Yin

Y1 >> Y0

Z1
Z0

Z0

Yin Y1

Y0 + jY1 l
Y0 + jY1l
Y1 + jY0 l

C eq =

1 l
Z1 v p

Low impedance (Z1) line

capacitive (shunt)
Z1 Ceq

series C : gap

34

Microwave Engineering, JJEONG

What happens on Smith Chart?

Series High/low impedance line

Cf)quarter-wave impedance transformer

z L = 0.5 + j 0.5

Z1 > Z 0 ~ series inductor

Z1 < Z 0 ~ shunt capacitor

35

Microwave Engineering, JJEONG

Impedance Synthesis using Short T/L (3)

Series L

Shunt C

Shunt L

Series C
gap

Z0H

Z0H
Z0L

Z0L

l<

10

Z0L

l<

Z0H

10

Ground

(parasitic
resonance)

36

Microwave Engineering, JJEONG

Ex) LPF with TLs

15
50

100

Port
P1
Num=1

15

15
100

L
C L5
C4

L
C L6
C5

50

C Port
C6 P2
Num=2

Advantage ~ lower loss than lumped LC, well-controlled

Disadvantage ~ large chip area
37

Microwave Engineering, JJEONG

Resonant Circuits Using TLs

Shunt Resonant

Shunt Anti-Resonant

Sh t C
Shunt
Series L
Shunt L
Shunt C

38

Microwave Engineering, JJEONG

HW 5.3

Design the amplifier using ADS

Small-signal equivalent circuit of MOSFET are shown below with parameter values. given below. You
d i an amplifier
design
lifi att 10 GH
GHz using
i thi
this MOSFET
MOSFET. A Z0 is
i 50 ohm.
h
1) Compute the input and output impedance (Zin and Zout) at 10 GHz.
2) Design input matching network using transmission lines only.
3) Design output matching circuit using transmission lines only.
4) Find s-parameters of the designed amplifiers from in 1 GHz to 20 GHz.
5) Compare the bandwidth performance with the amplifier designed using lumped elements.
Small-signal equivalent circuit

Z 0 = 50

Input matching
network

ZS

ZL

output matching
t
k
network

C gs
Ri

Z 0 = 50

Vs

Z0

Z in

Z out

Vc

g mV c

R ds

C ds

R i = 15

R ds = 200

C gs = 1 . 2 pF

C ds = 0 . 1pF

g m = 150 mS
39

Microwave Engineering, JJEONG

Remarks

Matching BW

lumped > distributed

Multi-stage > single-stage
Short TL > long TL
Some mismatch at center frequency > perfect match at center frequency

40

Microwave Engineering, JJEONG

Remarks

41

Microwave Engineering, JJEONG