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Features
n-channel
p-channel
-30V
VDS (V) = 30V
ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)
RDS(ON)
< 28m
(VGS = 10V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
PDIP-8
p-channel
n-channel
TA=25C
ID
IDM
TA=70C
B
TA=25C
Power Dissipation
TJ, TSTG
-5.3
2.5
1.6
1.6
-55 to 150
-55 to 150
RJL
Symbol
t 10s
Steady-State
Steady-State
-6.6
-30
RJA
RJA
RJL
Units
V
20
7.5
30
Symbol
t 10s
Steady-State
Steady-State
Max p-channel
-30
2.5
PD
TA=70C
V
A
W
C
Typ
40
67
33
Max
50
80
40
Units
C/W
C/W
C/W
Typ
38
66
30
Max
50
80
40
Units
C/W
C/W
C/W
AOP605
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
ID=250A, VGS=0V
IGSS
VDS=0V, VGS=20V
VGS(th)
VDS=VGS ID=250A
ID(ON)
VGS=10V, VDS=5V
30
TJ=55C
VGS=10V, ID=7.5A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
VGS=4.5V, ID=6.0A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance.
Coss
Crss
Rg
Gate resistance
100
nA
22.6
28
33
43
16
0.76
680
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg
Total Gate Charge
Qgs
12
1.8
TJ=125C
VDS=5V, ID=7.5A
Units
V
VDS=24V, VGS=0V
RDS(ON)
Max
30
IDSS
IS
Typ
m
m
S
820
pF
102
pF
77
pF
3.6
13.84
16.6
nC
6.74
8.1
nC
1.82
nC
Qgd
3.2
nC
tD(on)
Turn-On DelayTime
4.6
ns
tr
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
4.1
ns
20.6
ns
IF=7.5A, dI/dt=100A/s
16.5
5.2
ns
20
7.8
ns
nC
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 3 : June 2005
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10V
25
20
6V
5V
4.5V
ID (A)
20
15
3.5V
10
12
8
125C
VGS=3V
VDS=5V
16
4V
ID(A)
30
25C
0
0
0.5
Normalized On-Resistance
50
RDS(ON) (m)
1.5
2.5
3.5
4.5
1.7
60
VGS=4.5V
40
30
20
VGS=10V
1.6
VGS=10V
ID=7.5A
1.5
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
10
0
10
15
20
50
100
150
200
Temperature ( C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
70
60
1.0E+00
ID=7.5A
50
IS Amps
RDS(ON) (m)
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125C
40
1.0E-01
125C
1.0E-02
1.0E-03
30
25C
25C
1.0E-04
20
1.0E-05
10
2
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
1000
10
VDS=15V
ID=7.5A
800
Capacitance (pF)
VGS (Volts)
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
Coss
200
100
0
0
10
12
Crss
14
Qg (nC)
Figure 7: Gate-Charge characteristics
10
1ms
100s
0.1s
1s
DC
0.1
10
0.01
0.1
10
100
1000
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W
30
20
0
0.001
100
VDS (Volts)
10
25
10
10s
0.1
20
TJ(Max)=150C
TA=25C
30
10s
10ms
1
15
40
TJ(Max)=150C
TA=25C
RDS(ON)
limited
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Power W
ID (Amps)
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
1000
AOP605
Conditions
Min
ID=-250A, VGS=0V
-30
-1
TJ=55C
-5
VDS=0V, VGS=20V
VGS(th)
VDS=VGS ID=-250A
-1.2
ID(ON)
VGS=-10V, VDS=-5V
30
VGS=-10V, ID=-6.6A
TJ=125C
gFS
Forward Transconductance
VSD
IS
VDS=-5V, ID=-6.6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Rg
Gate resistance
Qgs
Qgd
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
100
nA
-2.4
28
35
37
45
44
58
13
-0.76
m
m
S
-1
-4.2
1100
pF
190
pF
122
pF
3.6
4.4
18.5
22.2
nC
9.6
11.6
nC
2.7
nC
4.5
nC
7.7
ns
5.7
ns
20.2
ns
9.5
IF=-6.6A, dI/dt=100A/s
Units
-2
920
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Max
VDS=-24V, VGS=0V
IGSS
RDS(ON)
Typ
20
ns
24
8.8
ns
nC
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C.
The value in any en
given
application
application
depends
depends
on the
on the
user's
user's
specific
specific
board
board
design.
design.
TheThe
current
current
rating
rating
is based
is based
on the
on the
t t 10s
10s
thermal
thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 3 : June 2005
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AOP605
30
-10V
25
-4.5V
-6V
-5V
20
20
-4V
-ID(A)
-ID (A)
VDS=-5V
25
15
-3.5V
10
15
10
125C
5
VGS=-3V
25C
0
0
0.5
60
1.5
2.5
3.5
4.5
1.60
Normalized On-Resistance
55
VGS=-4.5V
50
45
RDS(ON) (m)
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
40
35
VGS=-10V
30
25
20
ID=-6.6A
1.40
VGS=-10V
VGS=-4.5V
1.20
1.00
15
0.80
10
0
10
15
20
25
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
70
65
1.0E+00
ID=-6.6A
55
1.0E-01
50
1.0E-02
125C
125C
45
-IS (A)
RDS(ON) (m)
60
1.0E-03
40
35
1.0E-04
30
25C
25C
1.0E-05
25
1.0E-06
20
3
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOP605
10
VDS=-15V
ID=-6.6A
1250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
1000
750
500
Coss
0
0
12
16
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
30
Power (W)
0.1s
1ms
10ms
1s
20
10
10s
DC
0
0.001
0.1
0.1
15
TJ(Max)=150C
TA=25C
10s
100s
RDS(ON)
limited
1.0
10
40
TJ(Max)=150C, TA=25C
10.0
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
-ID (Amps)
Crss
250
10
100
0.01
0.1
10
100
1000
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
1000