4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers

January 2009

4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,

H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features Description
■ UL recognized (File # E90700, Volume 2) The general purpose optocouplers consist of a gallium
■ VDE recognized (File # 102497) arsenide infrared emitting diode driving a silicon pho-
– Add option V (e.g., 4N25VM) totransistor in a 6-pin dual in-line package.

Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs

Schematic Package Outlines

1 6

2 5

3 NC 4

PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Units

TOTAL DEVICE
TSTG Storage Temperature -40 to +150 °C
TOPR Operating Temperature -40 to +100 °C
TSOL Wave solder temperature (see page 8 for reflow solder profile) 260 for 10 sec °C
PD Total Device Power Dissipation @ TA = 25°C 250 mW
Derate above 25°C 2.94
EMITTER
IF DC/Average Forward Input Current 60 mA
VR Reverse Input Voltage 6 V
IF(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A
PD LED Power Dissipation @ TA = 25°C 120 mW
Derate above 25°C 1.41 mW/°C
DETECTOR
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 70 V
VECO Emitter-Collector Voltage 7 V
PD Detector Power Dissipation @ TA = 25°C 150 mW
Derate above 25°C 1.76 mW/°C

Electrical Characteristics (TA = 25°C unless otherwise specified)

Individual Component Characteristics
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
VF Input Forward Voltage IF = 10mA 1.18 1.50 V
IR Reverse Leakage Current VR = 6.0V 0.001 10 µA
DETECTOR
BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 30 100 V
BVCBO Collector-Base Breakdown Voltage IC = 100µA, IF = 0 70 120 V
BVECO Emitter-Collector Breakdown Voltage IE = 100µA, IF = 0 7 10 V
ICEO Collector-Emitter Dark Current VCE = 10V, IF = 0 1 50 nA
ICBO Collector-Base Dark Current VCB = 10V 20 nA
CCE Capacitance VCE = 0V, f = 1 MHz 8 pF

Isolation Characteristics
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec 7500 Vac(pk)
RISO Isolation Resistance VI-O = 500 VDC 1011 Ω
CISO Isolation Capacitance VI-O = &, f = 1MHz 0.2 2 pF
*Typical values at TA = 25°C

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 2
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified)
Transfer Characteristics
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio, IF = 10mA, VCE = 10V 4N35M, 4N36M, 100 %
Collector to Emitter 4N37M
H11A1M 50
H11A5M 30
4N25M, 4N26M 20
H11A2M, H11A3M
4N27M, 4N28M 10
H11A4M
IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40
TA = -55°C 4N37M

IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40

TA = +100°C 4N37M

VCE (SAT) Collector-Emitter IC = 2mA, IF = 50mA 4N25M, 4N26M, 0.5 V

Saturation Voltage 4N27M, 4N28M,
IC = 0.5mA, IF = 10mA 4N35M, 4N36M, 0.3
4N37M
H11A1M, H11A2M, 0.4
H11A3M, H11A4M,
H11A5M
AC CHARACTERISTICS
TON Non-Saturated IF = 10mA, VCC = 10V, 4N25M, 4N26M, 2 µs
Turn-on Time RL = 100Ω (Fig. 11) 4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
IC = 2mA, VCC = 10V, 4N35M, 4N36M, 2 10 µs
RL = 100Ω (Fig. 11) 4N37M

TOFF Turn-off Time IF = 10mA, VCC = 10V, 4N25M, 4N26M, 2 µs

RL = 100Ω (Fig. 11) 4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
IC = 2mA, VCC = 10V, 4N35M, 4N36M, 2 10
RL = 100Ω (Fig. 11) 4N37M

* Typical values at TA = 25°C

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 3
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves

Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized CTR vs. Forward Current
1.8 1.6
VCE = 5.0V Normalized to
TA = 25°C IF = 10 mA
1.7 1.4
VF - FORWARD VOLTAGE (V)

1.6 1.2

NORMALIZED CTR
1.5 1.0

1.4 0.8
TA = -55°C

1.3 0.6
TA = 25°C
1.2 0.4

TA = 100°C
1.1 0.2

1.0 0.0
1 10 100 0 2 4 6 8 10 12 14 16 18 20
IF - LED FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature Fig. 4 CTR vs. RBE (Unsaturated)
1.4 1.0
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9
IF = 20 mA
1.2 0.8
IF = 5 mA
IF = 10 mA
0.7
NORMALIZED CTR

1.0 IF = 5 mA
0.6
IF = 10 mA
0.5
0.8
0.4

IF = 20 mA 0.3
0.6
0.2
VCE = 5.0 V
0.4 0.1
Normalized to
IF = 10 mA 0.0
TA = 25°C
0.2
-60 -40 -20 0 20 40 60 80 100 10 100 1000

TA - AMBIENT TEMPERATURE (°C) RBE- BASE RESISTANCE (kΩ)

Fig. 6 Collector-Emitter Saturation Voltage

vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
1.0 100
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

0.9
TA = 25˚C
VCE (SAT) - COLLECTOR-EMITTER

VCE= 0.3 V
0.8 10
SATURATION VOLTAGE (V)

IF = 20 mA
0.7

0.6 1

IF = 10 mA
0.5
IF = 2.5 mA

0.4 0.1

0.3
IF = 5 mA
IF = 20 mA
0.2 0.01

0.1
IF = 5 mA IF = 10 mA
0.0 0.001
10 100 1000 0.01 0.1 1 10
RBE- BASE RESISTANCE (k Ω) IC - COLLECTOR CURRENT (mA)

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 4
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves (Continued)
Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE
1000 5.0
IF = 10 mA
VCC = 10 V VCC = 10 V
TA = 25°C 4.5 IC = 2 mA

NORMALIZED ton - (ton(RBE) / ton(open))

RL = 100 Ω

100 4.0
SWITCHING SPEED - (µs)

3.5

Toff 3.0
10 Tf
2.5
Ton
2.0
1
Tr
1.5

1.0

0.1 0.5
0.1 1 10 100 10 100 1000 10000 100000
R-LOAD RESISTOR (kΩ)
RBE- BASE RESISTANCE (k Ω)

Fig. 9 Normalized toff vs. RBE Fig. 10 Dark Current vs. Ambient Temperature
1.4 ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 10000
VCE = 10 V
1.3 TA = 25°C
1000
NORMALIZED toff - (toff(RBE) / toff(open))

1.2

1.1
100
1.0

0.9
10
0.8

0.7
1
0.6
VCC = 10 V
0.5 IC = 2 mA
0.1
RL = 100 Ω
0.4

0.3 0.01

0.2

0.1 0.001
0 20 40 60 80 100
10 100 1000 10000 100000

RBE- BASE RESISTANCE (k Ω) TA - AMBIENT TEMPERATURE (°C)

TEST CIRCUIT WAVE FORMS

VCC = 10V
INPUT PULSE
IF IC RL

10%
INPUT OUTPUT OUTPUT PULSE
90%
RBE
tr tf

ton toff
Adjust IF to produce IC = 2 mA

Figure 11. Switching Time Test Circuit and Waveforms

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 5
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89
6 4 8.13–8.89
6 4

6.10–6.60
6.10–6.60

Pin 1 1 3
Pin 1 1 3

5.08 (Max.)
0.25–0.36
3.28–3.53 7.62 (Typ.) 5.08 (Max.)
0.25–0.36
3.28–3.53

0.38 (Min.) 2.54–3.81

0.38 (Min.) 2.54–3.81
0.20–0.30
(0.86) 2.54 (Bsc)
15° (Typ.)
0.41–0.51 (0.86) 2.54 (Bsc)
0.20–0.30
1.02–1.78 0.41–0.51
0.76–1.14 1.02–1.78 10.16–10.80
0.76–1.14

Surface Mount

8.13–8.89 (1.78)
6 4
(1.52)

(2.54)
(7.49)
6.10–6.60
8.43–9.90 (10.54)

1 3
Pin 1 (0.76)
Rcommended Pad Layout

0.25–0.36

3.28–3.53
5.08 0.20–0.30
(Max.)
0.38 (Min.)
0.16–0.88
2.54 (Bsc)
(0.86) (8.13)
0.41–0.51
1.02–1.78
0.76–1.14

Note:
All dimensions in mm.

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 6
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Ordering Information
Order Entry Identifier
Option (Example) Description
No option 4N25M Standard Through Hole Device
S 4N25SM Surface Mount Lead Bend
SR2 4N25SR2M Surface Mount; Tape and Reel
T 4N25TM 0.4" Lead Spacing
V 4N25VM VDE 0884
TV 4N25TVM VDE 0884, 0.4" Lead Spacing
SV 4N25SVM VDE 0884, Surface Mount
SR2V 4N25SR2VM VDE 0884, Surface Mount, Tape and Reel

Marking Information

4N25 2

6
V X YY Q

3 4 5

Definitions
1 Fairchild logo
2 Device number
VDE mark (Note: Only appears on parts ordered with VDE
3
option – See order entry table)
4 One digit year code, e.g., ‘7’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 7
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Carrier Tape Specification

12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05 Ø1.5 MIN
0.30 ± 0.05 4.0 ± 0.1
1.75 ± 0.10

11.5 ± 1.0
21.0 ± 0.1 24.0 ± 0.3
9.1 ± 0.20

0.1 MAX 10.1 ± 0.20 Ø1.5 ± 0.1/-0

User Direction of Feed

Reflow Profile

300
260°C
280
260
>245°C = 42 Sec
240
220
200
180
Time above
160 183°C = 90 Sec
°C
140
120
100 1.822°C/Sec Ramp up rate
80
60
40
20 33 Sec

0
0 60 120 180 270 360
Time (s)

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 8
 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™ FRFET® Programmable Active Droop™
SM
CorePLUS™ Global Power Resource QFET®
CorePOWER™ Green FPS™ QS™
TinyBoost™
CROSSVOLT™ Green FPS™ e-Series™ Quiet Series™
TinyBuck™
CTL™ GTO™ RapidConfigure™
TinyLogic®
Current Transfer Logic™ IntelliMAX™ TINYOPTO™
EcoSPARK® ISOPLANAR™ ™ TinyPower™
EfficentMax™ MegaBuck™ Saving our world, 1mW/W/kW at a time™ TinyPWM™
EZSWITCH™ * MICROCOUPLER™ SmartMax™ TinyWire™
™ MicroFET™ SMART START™ TriFault Detect™
MicroPak™ SPM® µSerDes™
® MillerDrive™ STEALTH™
MotionMax™ SuperFET™
Fairchild® Motion-SPM™ SuperSOT™-3 ®
Fairchild Semiconductor® OPTOLOGIC® UHC
SuperSOT™-6
FACT Quiet Series™ OPTOPLANAR® Ultra FRFET™
® SuperSOT™-8
FACT ® UniFET™
SupreMOS™
FAST® VCX™
SyncFET™
FastvCore™ PDP SPM™ ® VisualMax™
FlashWriter® * XS™
Power-SPM™
FPS™ PowerTrench® The Power Franchise®
F-PFS™ PowerXS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change in
Formative / In Design
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
Full Production
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Not In Production
The datasheet is for reference information only.
Rev. I38

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

4NXXM, H11AXM Rev. 1.0.2 9