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The amount of charge that crosses this line per second is the
electric current I. This current is determined by four
parameters:
I = ∫ J dA
Remember that:
( )
J = J n + J p = neμ n + peμ p E (5.5)
( )
J = neμ n + peμ p E = σ E (5.6)
1
ρ=
σ
σ ≈ N D eμ n (5.10)
Similarly, for a p-type semiconductor
σ ≈ N A eμ p (5.11)
Semiconductors & EM Theory 10 Lecture 5
Worked Example
Find the conductivity at 300 K of a piece of n-type Si doped
with 7 ×1017 cm−3 of As atoms. Find also the ratio of the
electron and hole current densities.
n ≈ N D = 7 ×1017 cm −3
p ≈ n / N D ≈ (1.5 × 10
2
i )
10 2
/ 7 × 1017 cm −3 = 320 cm −3
σ = neμn + peμp ≈ N D eμn
. × 10−19 × 014
≈ 7 × 1023 × 16 . S / m ≈ 16
. × 104 S / m
V
E=
L
V
J = σE = σ
L
Semiconductors & EM Theory 12 Lecture 5
The current I in the device flows through an area WH, so that
J = I / WH and hence
V I
J =σ =
L WH
We define the resistance R of the device as the ratio V/I
V 1 L L
R= = ≡ρ (5.12)
I σ WH WH
• Current
• Current Density
• Drift current
• Conductivity
• Resistivity