Name:

Last:________________________ First: _____________________

UCD Student ID #:______________________________________________

University of California, Davis

Department of Electrical and Computer Engineering
EEC110A Midterm Exam - PART B
May 19, 2014

Instructions: Read this page carefully before you start the exam.
This exam consists of 12 pages including this page. Please check to make sure this booklet is
complete.
Please right legibly and identify your answers for easy grading.
This is due by 4pm on Friday May 23rd in Kemper 2131.

Note: Answers that are not clearly marked may receive partial credit multiple answers will not
be given credit unless one is singled out.

Problem

Maximum
Points

20

20

20

20

20

20

Total

120

Score

1. Given the circuit below, use appropriate models for each diode and:
a) Find the current through each of the diodes (ID1, ID2, ID3), and the voltages across each diode
(VD1, VD2, VD3). Clearly identify your final answer!

b) State how each diode is modeled, and if the model used accurately describes the operating
condition for that device and why.

2. For the circuit given below let = 1.5 + 0.005cos(6283). Assume room temperature.

a) Identify 3 methods of finding the current through the diode, and state whether each method
would is accurate for the circuit above.

b) Let Is= 1 x 10-14 A, find the Q-point by using load-line analysis in the provided graph.

c) Give the appropriate small-signal equivalent circuit model for this diode, and the value of this
circuit element.

3. For the circuit below perform the following:

a) Under these conditions find the collector voltage and current, VC and IC.

b) What operating region is this device in (i.e. Reverse-Active)? Be sure to justify your answer
using the values you calculated above.

c) Draw an energy band diagram for the BJT above under the current operating conditions, be
sure to clearly label your base, emitter, and collector, and show the potentials across each.

d) State the most effective way to modify this circuit to improve the performance (gain) of the
amplifier.

4. Given the circuit below, and using the design rules discussed in class: a) find the resistor
values R1, R2, RC, and RE to give this device a collector current of 0.1 mA. Assume = 200, VA
= 100V, and the device is operating at room temperature. Note the final resistor values on the
schematic.

b) Calculate the small-signal parameters: r, ro, gm for this circuit.

c) Draw the COMPLETE small-signal, midband equivalent circuit for this system, including
all parasitic resistances (rb, rex, etc.).

5. Given the circuit below answer the following questions. Let =100, and for parts a) through
c) do NOT include the source or load resistances.

a) What type of amplifier is this (i.e. common-base amplifier)?

b) Calculate the input resistance to this circuit.

c) Calculate the output resistance to this circuit.

d) Calculate the amplifier gain av.

e) Assuming RS = 1k calculate the input attenuation factor.

f) Assuming RL = 1k calculate the output attenuation factor.

g) Calculate the overall gain vo/vs.

h) Sketch the 2-port network model of this amplifier using the values you calculated above.

6. In the circuit below IC=500A, the early voltage is 100V, and =100.

a) Find the amplifier voltage gain Av.

b) Find the amplifier current gain, Ai.

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c) Find the total power gain Ap of this circuit.

d) If a new BJT was used in this circuit which was identical except that the donor doping
concentration was reduced by a factor of 100 in the emitter region, briefly describe the effects
this would have on the resulting amplifier and why.

11

Equation Sheet
EEC110A Midterm Exam
Junction Diodes:
Current:

= 1

Junction Capacitance:

Diffusion Capacitance:

= 0 + 0

2 ,

0

Small-signal:

Bipolar Transistor (npn):

Current:

=
=

= 1 +

= B

VA=Early Voltage
Small-signal:
=
=

=
=
=

=
=

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