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STMicroelectronics
Deep Sub-Micron Processes
120nm, 90nm, 65 nm CMOS
Feature Size
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High density
Low power
More system Integration
More Process Features
AMS 0.8
1.2k gates/mm 2
AMS 0.6
3k gates/mm 2
1994 at CMP
AMS 0.35
18k gates/mm 2
ST 0.25
35k gates/mm 2
ST 0.18
80k gates/mm 2
ST 0.12
180k gates/mm 2
ST 90nm
400k gates/mm 2
ST 65nm
800k gates/mm 2
2006 at CMP
CMP annual users meeting, 18 January 2007, PARIS
Process Roadmap
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3,5
3
2,5
CMP
2
1,5
1
0,5
0
84
86
88
90
92
94
96
98
00
02
04
06
08
10
Year
STMicroelectronics
CMOS 0.12
HCMOS9
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HCMOS9 Process
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2500 Euro/mm2
(25 samples for which 5 are packaged)
70
400
60
350
50
300
250
mm
Nbr of circuits
40
30
200
150
20
100
10
50
0
2003
2004
2005
2006
2003
2004
2005
2006
STMicroelectronics
90nm CMOS
CMOS090
CMOS090 Process
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5000 Euro/mm2
(25 samples for which 5 are packaged)
More Than 120 Customers Are Using The STs 90nm CMOS From CMP
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BELGIUM
BELGIUM
ITAL Y
ITAL Y
JAP AN
NORWAY
NORWAY
CAN ADA
CAN ADA
CAN ADA
PHILIPPINES
RUS SIA
RUS SIA
CAN ADA
CAN ADA
RUS SIA
SINGAPO RE
CAN ADA
CAN ADA
SPAIN
SPAIN
CAN ADA
CAN ADA
CAN ADA
SPAIN
SWE DEN
SWE DEN
CAN ADA
CAN ADA
CAN ADA
SWE DEN
SWITZE RL AN D
SWITZE RL AN D
CAN ADA
DENM ARK
CE RN , Geneva
NECTE C, Bangkok
SWITZE RL AN D
THAIL AN D
DENM ARK
FINLAN D
FINLAN D
UK
UK
SPINTE C, G renoble
GET/EN ST, Par is
FRAN CE
FRAN CE
UK
UK
FRAN CE
FRAN CE
FRAN CE
UK
UK
UK
FRAN CE
FRAN CE
UK
USA
FRAN CE
FRAN CE
FRAN CE
USA
USA
USA
TIMA, Grenob le
Univer sity of Stu ttgart
FRAN CE
GERM AN Y
USA
USA
GERM ANY
GRE ECE
USA
USA
HONG KONG
ITAL Y
ITALY
USA
USA
USA
USA
USA
USA
ITAL Y
ITAL Y
USA
USA
ITAL Y
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Europe (7)
ETH-Zurich (Switzerland)
VTT (Finland)
UCLA (USA)
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Europe (9)
UCLA (USA)
Novelda AS (Norway)
VTT (Finland)
STMicroelectronics
65nm CMOS
CMOS065
Analog/RF capabilities
800 kgates/mm2
CMOS065 Process
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STMicroelectronics
SiGe 0.35
0.35
BICMOS6G
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Applications
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MPW runs
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BiCMOS7RF Technology
0.25m SiGe:C BiCMOS process
For RF and Power Applications
BiCMOS Technologies
BICMOS9
2003
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BICMOS7RF
0.13m CMOS
0.25m CMOS
SiGe-C, fT/Fmax=60GHz/90GHz
2002
BICMOS8X
0.18m CMOS
2001
2000
1999
SiGe, fT/Fmax=70GHz/90GHz
PT
IC
AL
BICMOS7
CO
0.25m CMOS
M
MU
SiGe, fT/Fmax=70GHz/90GHz
NI
CA
TI
BICMOS6G
O
NS
0.35m CMOS
RF
IC
L
P
AP
IO
T
A
S
N
SiGe, fT/Fmax=45GHz/60GHz
1998
BICMOS6/6M
0.35m CMOS
Si, fT/Fmax=25GHz/40GHz
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CMOS
Use of HCMOS7 as the base process
5 nm gate oxide
0.25 m gate length
Shallow trench isolation
Gate type N+ and P+
Silicidation of gates and junctions for low
access resistance
Supply voltage 2.5V (2.7V max)
50 Ohm.cm SUBSTRATE
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BIPOLAR
SiGe:C epitaxial base (non selective)
Deep trench isolation
Quasi self aligned structure
Low-voltage HBT (Ft=55GHz typ BVCEO=2.8V
min)
High-voltage HBT (Ft=30GHz typ BVCEO=6.0V
typ)
Low Noise Characteristics (Nfmin=0.4dB at 2GHz)
OTHER DEVICES
Polysilicon resistors: P & N type (85 & 180 Ohm/sq)
N+ Active resistor (60 Ohm/sq)
Poly/N+ sinker capacitor (2.88fF/m)
CMP annual users meeting, 18 January 2007, PARIS
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OPTIONS
HV NLDEMOS (2.5V BVDS=13.5V min WxRon=3W.mm typ)
High value poly resistor (1kW/sq)
Isolated N-channel MOS
Isolated Vertical PNP (Ft=6GHz typ BVCEO=9.5V typ)
5fF/m MIM capacitor
Precise TaN resistor (35W/sq; +/-10%)
BACK END
5 metal levels / thick top metal 2.5m
M1 in Tungsten; M2 M5 in Aluminium
M5 in thick copper 4m (option)
Bumping
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Capacitors
5fF/m MIM capacitor (option)
N+ Poly/NWell capacitor
N+ Poly/N+ Sinker capacitor
Junction Diodes
N+/Pwell
P+/Nwell
Varactors
P+/Nwell
diode
P+/Nwell diode with differential structure
MOS transistor
Thick Metal Inductors
Single-ended indcutors
Symmetrical and differential inductors
Process Masks
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29 masks
free
2 masks
2 masks
1 mask (free if IVPNP)
1 mask
1 mask
Future Option
Precise TaN Resistor
LV NLDEMOS option
LV PLDEMOS option
1 mask
2 masks (1 if HV NLDEMOS)
2 masks
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1500 Euro/mm 2
Minimum charge is the price of 3 mm 2.
Delivery of 25 samples for which 5 are packaged.
Open to every Institution or Company, (under NDA).
4 MPW runs expected in 2007.
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STMicroelectronics
MPW Results 2006
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70
60
50
40
2004
2005
2006
30
20
10
0
CM OS065
CMOS090
HCMOS9GP
HCM OS8D
BiCMOS6G
BiCMOS7RF
Research: 84
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Education: 11
90
80
70
60
50
40
30
Industry
Research
Education
20
10
0
France Europe N. Am.
Asia
only
CMP annual users meeting, 18 January 2007, PARIS
Conclusion
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