You are on page 1of 345

Agilent EEsof EDA

Presentation on ADS Momentum

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

ADS Momentum
A Half-Day Seminar

Keefe Bohannan
Agilent EEsof Applications Engineer
April 2003

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_01_01

Page 2

What is meant by Planar EM simulation ?


Substrate - multiple dielectrics
Metals - traces on different layers forming component and/or thin film
interconnect
Vias - connecting different layers
Method of Moments technique
Sometimes referred to as 2.5D
It does NOT include:
Arbitrary 3D structures
Horn Antennas

Momentum Seminar

momentum_01_01

Page 3

Why are Planar EM Simulators used ?


No simple analytical model exists
Coupling between conductors or layers is significant
Arbitrary planar geometry
Narrow frequency response not captured by analytical models
Radiation patterns of planar antennas
CPW transmission lines
When full 3D analysis would take too long

Momentum Seminar

momentum_01_01

Page 4

How are Planar EM Simulators used ?


Layout driven
Created entirely within layout,
Schematic-to-Layout translation, OR
Import (DXF, GDSII, etc.)
Momentum interface within ADS Layout
Mode > Substrate/Metallization > Port > Mesh >
Simulation > Component > Optimization
Outputs
S-parameters
Current visualization

Momentum Seminar

momentum_01_01

Page 5

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Momentum Seminar

momentum_01_01

Page 6

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Everything is placed on a layer


There are 39 default layers
User may add new layers, remove existing layers, or
modify layer names and properties
User may define name, color, pattern, shape display
(outlined/filled), and line style associated with layers
Layers may be set to be visible/invisible,
selectable/unselectable, and insertable/uninsertable
Items on unselected layers may not be selected /
edited / moved / deleted
Only one layer is insertable at a time
Objects can only be created, copied, or moved
TO the insertable (they can be copied or
moved FROM any selectable layer)
Momentum Seminar

momentum_01_01

Page 7

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Preferences which apply to things not yet placed:


Trace, Placement, Entry/Edit, Units/Scale,
Component Text, Text
Preferences which apply to things already placed:
Select, Grid/Snap, Pin/Tee, Display, Layout
units
Momentum Seminar

Preferences for schematic and layout window are set


separately
Preferences Setting are saved to file in project
layout.prf and schematic.prf
Preferences files from other projects may be read in
Options > Preferences Read... button
momentum_01_01

Page 8

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Momentum Seminar

momentum_01_01

Page 9

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Momentum Seminar

momentum_01_01

Page 10

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Momentum Seminar

momentum_01_01

Page 11

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Momentum Seminar

momentum_01_01

Page 12

Creating/importing artwork in Layout

Created entirely within layout


Schematic-to-Layout translation
Import (DXF, GDSII, etc.)

Simplify hierarchical designs by


using Generating Artwork
(flattens hierarchy, but retains
multi-layer layout)

Momentum Seminar

momentum_01_01

Page 13

How are Planar EM Simulators used ?


Layout driven
Created entirely within layout,
Schematic-to-Layout translation, OR
Import (DXF, GDSII, etc.)
Momentum interface within ADS Layout
Mode > Substrate/Metallization > Port > Mesh >
Simulation > Component > Optimization
Outputs
S-parameters
Current visualization

Momentum Seminar

momentum_01_01

Page 14

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9596EN

Agilent EEsof EDA


Detailed Presentation on Momentum - Part 1 of 3

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Using Momentum

Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve

Enable regular Momentum or Momentum RF

Display Results

Define Substrate and Metallization (pre-compute option)


Modify the type and impedance of ports
Describe a possible Substrate enclosure
Create/modify Momentum Component to be used in EM/circuit co-simulation
or co-optimization
Define Mesh parameters (pre-compute option)
Setup and Perform a Momentum simulation (planar solve)
Setup and Perform a Momentum optimization (geometric perturbation based)
Display Visualization (S-parameters, current density, transmission line
parameters) and Radiation patterns
Export 3D files for HFSS

Momentum Seminar

momentum_01_02

Page 1

Using Momentum: Selecting the Analysis Mode


Click this submenu to toggle the analysis mode

Solution process
Select Mode

Momentum  MomentumRF
MomentumRF  Momentum

Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results

Momentum Seminar

momentum_01_02

Page 2

Momentum versus MomentumRF: A Snapshot


Momentum features:

Momentum RF features:

Full-Wave EM Simulation

Quasi-Static EM Simulation

Rooftop Basis Function

Star/Loop Basis Functions

Rectangular and Triangular Cells

Polygonal cells

For most passive geometry

Best for geometrically complex designs

Full accuracy for all circuit sizes

For electrically small designs ( /2)

No inherent upper frequency limit

Upper frequency depends on size

Potential instability at f <kHz to MHz

Results stable down to DC

Port Calibration

Port Calibration

Box and Waveguide inclusion

No Box / Waveguide Modes

Includes all radiation modes

For designs that dont radiate

Display 2D and 3D Radiation Patterns

No Radiation Patterns
Great for 1st pass results, even for large designs (> /2)
Simulation time and memory decrease by ~10X-25X

Momentum Seminar

momentum_01_02

Page 3

Momentum versus MomentumRF


Electrically Small condition for Momentum RF
How do I know?
Status window provides rule of thumb frequency
for which the structure is electrically small

D /2

Momentum Seminar

momentum_01_02

Page 4

Momentum versus MomentumRF


Planar EM Simulation Basics
Physical Design
Substrate
Metallization
Ports

Method of Moments
Meshing
Rooftop functions

B2(r)

B1(r)

I1

I2

B3(r)

I3

/10
Heywhere did
this equation
come from?
Momentum Seminar

J(r) = I1B1(r) + I2B2(r) + I3B3(r)

momentum_01_02

Page 5

Maxwells Equations
E = -B/t
H = J + D/t
D =
B = 0

Faradays Law
Amperes Law
Gausss Law
No Name (Gausss Law for Magnetism)

where

E = Electric Field Intensity Vector


H = Magnetic Field Intensity Vector
D = Electric Flux Density (Electric Displacement Vector)
B = Magnetic Flux Density Vector

James C. Maxwell

If one then transforms these equations to the integral form, the mixed potential integral equation in very general
form as a linear integral operator equation follows:

Here, J(r) represents the unknown surface currents and E(r) the known excitation of the problem. The Green's dyadic of the
layered medium acts as the integral kernel. The unknown surface currents are discretized by meshing the planar
metallization patterns and applying an expansion in a finite number of subsectional basis functions B1(r), ..., BN(r):

Ohhhhsorry I
asked. 
Momentum Seminar

momentum_01_02

Page 6

Momentum versus MomentumRF


Planar EM Simulation Basics

Method of Moments

B1(r)
I1

Maxwells Equations

[Z].[I]=[V]

I1
Equivalent Circuit

[Z] = [R] + j[L] + 1/j

Momentum Seminar

I2

/10

Matrix Equation

[C]-1

L11
C11

B3(r)

B2(r)

L12

L13
I2
R22 L22

I3

L23

I3
L33

C22

C12

momentum_01_02

Page 7

Momentum versus MomentumRF


Fullwave versus Quasi-Static: Fullwave
1 e jkR
R

Fullwave EM
Maxwells Equations

Fullwave electric & magnetic Greens functions

Matrix Equation

Includes space and surface radiation

[Z].[I]=[V]

[L(w)] & [C(w)] are complex and frequency dependent


[Z(w)] matrix reload CPU intensive

Equivalent Circuit

[Z] = [R] + j[L()] + 1/j [C()]-1


[S]
Momentum Seminar

momentum_01_02

Page 8

Momentum versus MomentumRF


Fullwave versus Quasi-Static: Quasi-Static

Quasi-Static EM

1 e jkR
R

R1 (1 jkR + ...)

Maxwells Equations
Electro- and magneto-static Greens functions

Matrix Equation

[Zo].[I]=[V]

Near field / low freq approximation


L(w) = L0 + L1wR + L2(wR)2 +
C(w) = C0 + C1wR + C2(wR)2 +

Equivalent Circuit

[Zo] = [R] + j[Lo] + 1/j [Co]-1


[S]
Momentum Seminar

Neglects far field radiation


[L0] & [C0] are real and frequency independent
[Z0] matrix reload very fast

momentum_01_02

Page 9

Momentum versus MomentumRF


A Summary of Effects Included
Layout
DC

Spice
Spice model

Momentum RF Momentum MW
S parameters

S parameters

RF

MW

quasi-static inductance . . . . . .

quasi-static capacitance . . . . .
DC conductor loss (s) . . . . . . . .
DC substrate loss (s) . . . . . . . .
dielectric loss (tan d) . . . . . . . . . . . . . . . . . . . . . . . . . . .
skin effect loss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
substrate wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
space wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Momentum Seminar

momentum_01_02

Page 10

Using Momentum: Creating Substrate Stack-ups and


Mapping Layout Layers as Metallization Layers
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results

Momentum Seminar

momentum_01_02

Page 11

Using Momentum: Creating Substrate Stack-ups and


Mapping Layout Layers as Metallization Layers

Once you have created or imported your artwork


Momentum Seminar

momentum_01_02

Page 12

Using Momentum: Creating Substrate Stack-ups and


Mapping Layout Layers as Metallization Layers
be sure to define (or open) your substrate stack-up and map the metallization layers

Momentum Seminar

momentum_01_02

Page 13

Using Momentum: Creating Substrate Stack-ups and


Mapping Layout Layers as Metallization Layers
Greens Function Substrate Calculation Time

Students Guide A-36

Momentum Seminar

momentum_01_02

Page 14

Using Momentum: Creating Substrate Stack-ups and


Mapping Layout Layers as Metallization Layers
A note on layout layer conductivity
Conductivity defined as:

Perfect Conductor (lossless)

(Real, Imaginary)

(Real, thickness)

Impedance (Real, Imaginary)

The parameters selected are applied


toward a conductor loss algorithm, this
does NOT affect the layout thickness

Momentum Seminar

momentum_01_02

Page 15

Using Momentum: Creating Substrate Stack-ups and Mapping


Layout Layers as Metallization Layers: Loss Model used in Strip Conductors
Momentum treats all conductors as having zero thickness. However, the conductivity and thickness can be specified to approximate
frequency dependent losses in the metallization patterns.
Momentum uses a complex surface impedance for all metals that is a function of conductor thickness, conductivity, and frequency.
At low frequencies, current flow will be approximately uniformly distributed across the thickness of the metal. Momentum uses
this minimum resistance and an appropriate internal inductance to form the complex surface impedance.
At high frequencies, the current flow is dominantly on the outside of the conductor and Momentum uses a complex surface
impedance that closely approximates this skin effect.
At intermediate frequencies, where metal thickness is between approximately two and ten skin depths, the surface impedance
transitions between those two limiting behaviors.
This surface impedanceis added to the Method of Moments approach that is used forMomentum in general.
The formula used is a combination of a high-frequency conductivity and a low-frequency bulk resistivity. The formula is such that both
approaches (LF bulk behavior  HF surface impedance) transition seamlessly.
The formula is:
Z = coth() * Zc
where Zc = the HF impedance and coth() is the correction for finite thickness
Zc = 0.5 * sqrt(j * 0 * /( + j * 0 * ))
= 0.5 * thickness * sqrt(j * 0 * * ( + j * 0 * ))
where = 2 * * f
and = conductivity = 1/resistivity [in Siemens/meter]

We will examine a
thick conductor
method later in this
seminar

The meshing density can affect the simulated behavior of a structure. A more dense mesh allows current flow to be better represented
and can slightly increase the loss. This is because a more uniform distribution of current for a low density mesh corresponds to a lower
resistance

Momentum Seminar

momentum_01_02

Page 16

Using Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results

Momentum Seminar

momentum_01_02

Page 17

Placing and Defining Ports


Considerations
Keep the following points in mind when adding ports to circuits to be simulated using Momentum:
The components or shapes that ports are connected to must be on layout layers that are mapped to
metallization layers that are defined as strips or slots. Ports cannot be directly connected to vias.
Make sure that ports on edges are positioned so that the arrow is outside of the object, pointing
inwards, and at a straight angle.
Make sure that the port and the object you are connecting it to are on the same layout layer. For
convenience, you can set the entry layer to this layer; the Entry Layer listbox is on the Layout tool
bar.
A port must be applied to an object. If a port is applied in open space so that is not connected to an
object, Momentum will automatically snap the port to the edge of the closest object. This will not be
apparent from the layout, however, because the position of the port will not change.
If the Layout resolution is changed after adding ports that are snapped to edges, you must delete
the ports and add them again. The resolution change makes it unclear to which edges the ports are
snapped, causing errors in mesh calculations.

Note Do not use the ground port component (Component > Ground) in circuits that will be
simulated using Momentum. Either add ground planes to the substrate or use the ground reference
ports.
(Ground port component toolbar button:

Momentum Seminar

momentum_01_02

Page 18

Placing and Defining Ports


Description of Momentum Port Types
Placement

Type of layer

Edge

Strip or
Slot

Edge or
Surface

Strip

Two ports with opposite polarity

Edge

Strip

Coplanar

Two ports with opposite polarity

Edge

Slots

Common Mode

Two ports with the same polarity

Edge

Strip

Ground Ref.

An explicit ground reference for a


Single or Internal port.

Edge or
Surface

Strip

Port Type

General Description

Single
(default)

Calibrated to remove mismatch at port


boundary (might also call this a
transmission line port)

Internal

Not calibrated (might also call this a


direct excitation port)

Differential

CPW NOTE: For finite ground planes, use Ground Reference ports and Internal port on center conductor.
Momentum Seminar

momentum_01_02

Page 19

Placing and Defining Ports


Single Port Properties
It is connected to an object that is on either a strip or slot metallization layer.
It can be applied only to the edge of an object.
The port is external and calibrated. The port is excited using a calibration process that
removes any undesired reactive effects of the port excitations (mode mismatch) at the port
boundary. This is performed by extending the port boundary with a half-wavelength
calibration (transmission) line. The frequency wavelength selected during the mesh or
simulation process is used to calculate the length of the calibration line. For more information
about the calibration process, refer to "Calibration and De-embedding of the S-parameters"
on page A-7 in the Momentum manual.
The port boundary can be moved into or away from the geometry by specifying a reference
offset. S-parameters will be calculated as if the port were at this position.
When two or more single ports are on the same reference plane, coupling effects caused by
parasitics affects the S-parameters. The calibration process groups the ports so that any
coupling in the calibration arms is included in the S-parameter solution.
If the port is connected to an object on a strip layer, the substrate definition must include at
least one infinite metal layer: a top cover, ground plane, or a slot layer, or a ground
reference must be used in addition to the port.
If the port is connected to an object that is on a slot layer, the port has polarity.

Tip It is not necessary to open the Port Editor dialog box to assign this port type. Any port
without a port type specified is assumed to be a single port.

Momentum Seminar

momentum_01_02

Page 20

Placing and Defining Ports


Defining a Single Port
Choose Momentum > Port Editor.
Select the port that you want to assign this type to.
In the Port Editor dialog box, under Port Type, select Single.
Enter the components of the port impedance in the Real and Imaginary fields,
and specify the units.
You can shift the port boundary, also referred to as the port reference plane.
Shifting the boundary enables a type of de-embedding process that effectively
adds or subtracts electrical length from the circuit, based on the characteristic
impedance and propagation characteristic of the port. Enter the offset in the
Reference Offset field, and select the units. A positive value moves the port
boundary into the circuit, a negative value moves the port boundary away from
the circuit.
Click Apply to add the definition to the port.

Momentum Seminar

momentum_01_02

Page 21

Placing and Defining Ports


Single Port: Avoiding Overlap (of calibration arm)

Be aware that when using single ports, the calibration arm applied to a port may be
long enough to overlap another element in the circuit. In this case, the port will be
changed to an internal port type, and no calibration will be performed on it. If this
occurs, a message will be displayed during simulation in the Status window indicating
the change.

Momentum Seminar

momentum_01_02

Page 22

Placing and Defining Ports


Single Port: Applying Reference Offsets
Reference offsets enable you to reposition single port types in a layout and thereby adjust electrical lengths in a layout, without
changing the actual drawing. S-parameters are returned as if the ports were placed at the position of the reference offset.

Why Use Reference Offsets?

The need to adjust the position of ports in a layout is analogous to the need to eliminate the effect of probes when measuring
hardware prototypes. When hardware prototypes are measured, probes are connected to the input and output leads of the Device
Under Test (DUT). These probes feed energy to the DUT, and measure the response of the circuit. Unfortunately, the measured
response characterizes the entire setup, that is, the DUT plus the probes. This is an unwanted effect. The final measurements should
reflect the characteristics of the DUT alone. The characteristics of the probes are well known, so measurement labs can
mathematically eliminate the effects of the probes, and present the correct measurements of the DUT.
There are significant resemblances between this hardware measurement process and the way Momentum operates. In the case of
Momentum, the probes are replaced by ports, which, during simulation, will feed energy to the circuit and measure its response. The
Momentum port feeding scheme also has its own, unwanted effect: low-order mode mismatch at the port's boundary, although this is
eliminated by the calibration process. However, in order for this calibration process to work well, it is necessary that the fundamental
mode is characterized accurately. This can only be accomplished when the distance between the port boundary and the first
discontinuity is sufficiently large, that is, there exists a feedline that is long enough to provide this distance.

Momentum Seminar

momentum_01_02

Page 23

Placing and Defining Ports


Single Port: Allowing for Coupling Effects
If you have two or more single ports that lie on the same reference plane, the calibration process will
take into account the coupling caused by parasitics that naturally occurs between these ports. This
yields simulation results that more accurately reflect the behavior of an actual circuit.
The figure below helps illustrate which ports will be grouped in order for the calibration process to
account for coupling among the ports. In this setup, only the first two ports will be grouped, since the
third port is an internal port type and the fourth port is on a different reference plane. Note that even
though the second port has a reference offset assigned to it, for this process they are considered to be
on the same plane and their reference offsets will be made equal.
If you do not want the ports to be grouped, you must add a small thickness of metal to the edge of the
object that one of the ports is connected to. The ports will no longer be on the same plane, and will not
be considered part of the same group.

Momentum Seminar

momentum_01_02

Page 24

Placing and Defining Ports


Internal Port Properties

Internal ports enable you to apply a port to the surface of an object in your design. By using internal
ports, all of the physical connections in a circuit can be represented, so your simulation can take into
account all of the EM coupling effects that will occur among ports in the circuit. These coupling effects
caused by parasitics are included in your simulation results because internal ports are not calibrated.
You should avoid geometries that allow coupling between single and internal ports to prevent incorrect Sparameters.

An example of where an internal port is useful is to simulate a bond wire on the surface on an object.
Another example of where an internal port is necessary is a circuit that consists of transmission lines that
connect to a device, such as a transistor or a chip capacitor, but this device is not part of the circuit that
you are simulating. An internal port can be placed at the connection point, so even though the device is
not part of the circuit you are simulating, the coupling effects that occur among the ports and around the
device will be included in your simulation.

Internal ports are often used in conjunction with ground references.

Momentum Seminar

momentum_01_02

Page 25

Placing and Defining Ports


Internal Port Properties

It can be applied to the interior of a circuit by applying it to the surface of an object.


It can be applied to the edge of an object.
It can be applied to objects that are on strip layers only.
The orientation of the port is not considered if it is on the surface of an object. (For a
description of port orientation, refer to "Adding a Port to a Layout" on page B-5 in
the Momentum manual.)
No calibration is performed on the port. Because no calibration is performed on the
port, the results will not be as accurate as with a single port. However, the
difference in accuracy is small.

Defining an Internal Port


Choose Momentum > Port Editor.
Select the port that you want to assign this type to.
Click Apply.

Momentum Seminar

momentum_01_02

Page 26

Placing and Defining Ports


Illustration of Internal Port Excitation: Direct Point Feed

direct excitation point feed

Momentum Seminar

momentum_01_02

Page 27

Placing and Defining Ports


Illustration of Internal Port Excitation: Direct Line/Edge Feed

direct excitation
line feed

Momentum Seminar

momentum_01_02

Page 28

Placing and Defining Ports


Differential Port Properties
Differential ports should be used in situations where an electric field is likely to build up
between two ports (odd modes propagate). This can occur when:
The two ports are close together
There is no ground plane in the circuit or the ground plane is relatively far away
One port behaves (to a degree) like a ground to the other port, and polarity between the
ports is developed.
The ports are connected to objects that are on strip metallization layers.
The electric field that builds up between the two ports will have an effect on the circuit
that should be taken into account during a simulation. To do this, use differential ports.
Differential ports have the following properties:
They can be applied to objects on strip layers only.
They are assigned in pairs, and each pair is assigned a single port number.
Each of the two ports is excited with the same absolute potential, but with the opposite
polarity. The voltages are opposite (180 degrees out of phase). The currents are equal but
opposite in direction when the ports are on two symmetrical lines, and the current
direction is approximated for other configurations.
The two ports must be on the same reference plane.

Momentum Seminar

momentum_01_02

Page 29

Placing and Defining Ports


Differential Port Numbering

Note: Port numbers for differential ports are treated in the following manner: on the layout, you will continue
to see the port numbers (instance names) that were assigned to each port when they were added to the
layout. Use the Momentum Port Editor dialog box to identify which pair of ports will be treated as a differential
port.
When Momentum simulates designs containing non-consecutive port numbers, the ports are remapped to
consecutive numbers in the resulting data file. The lowest port number is remapped to 1, and remaining
numbers are remapped in consecutive order. The port numbers are not changed in the design itself. A
message in the Status window announces the change, and lists the mappings.
For example, if you are simulating a design with ports numbered 1 and 3, the following status message
informs you of the changes:

Layout has non-consecutive port numbers.


Output files will have consecutive port numbers.
layout port -> output port
1
-> 1
3
-> 2
Also, when you view results, you will see S-parameters for the differential port numbers. In the example
above, the layout would show p1, p2, p3, p4. The S-parameter results will be for combinations of the original
P1 and P3 only.
Momentum Seminar

momentum_01_02

Page 30

Placing and Defining Ports


Defining a Differential Port
Choose Momentum > Port Editor.
Select the port that you want to assign this type
to. Note the port number.
In the Port Editor dialog box, under Port Type,
select Differential.
Under Polarity, make sure that Normal is
selected.
Click Apply.
Select the second port.
In the Port Editor dialog box, under Port Type,
select Differential.
Under Polarity, select Reversed.
Under Associate with port number, enter the
number of the previously-selected port.
Click Apply.
Repeat these steps for other differential port pairs
in the circuit.
Click OK to dismiss the dialog box.

Momentum Seminar

momentum_01_02

Page 31

Placing and Defining Ports


Illustration of Differential Port Excitation: Direct Point Feed

1.i

direct excitationn
line feed

-1.i

line feed
ground reference

Students Guide A-32

Momentum Seminar

momentum_01_02

Page 32

Placing and Defining Ports


Coplanar Port Properties
This type of port is used specifically for coplanar waveguide (CPW) circuits. It is similar
to a differential port, but coplanar ports are applied to objects on slot layers (that is,
where slots are used in the design). Coplanar ports should be used in situations where
an electric field is likely to build up between two ports. This can occur when:
The two ports are close together
Polarity between the ports develops
The ports are connected to objects that are on slot metallization layers
The electric field that builds up between the two ports will have an effect on the
circuit that should be taken into account during a simulation. To do this, use
coplanar ports.
Coplanar ports have the following properties:
They can be applied to objects on slot layers only.
They are assigned in pairs.
Each of the two ports is excited with the same absolute potential, but with the
opposite polarity. The voltages are opposite (180 degrees out of phase). The
currents are equal but opposite in direction when the ports are on two symmetrical
lines, and the current direction is approximated for other configurations.
The two ports must be on the same reference plane.

Momentum Seminar

momentum_01_02

Page 33

Placing and Defining Ports


Coplanar Port Polarity
Be careful when assigning polarity to coplanar ports.
An incorrect choice of polarity can change the phase of
transmission type S-parameters by 180 degrees.
To verify polarity, zoom in on a coplanar port. You will
notice two sets of arrows applied to the port. One
appears when you add the port component to the
circuit. The second will appear after the mesh is
computed. It indicates the direction of the voltage over
the slot.

Momentum Seminar

Note: Port numbers for CPW ports


are treated similar to the manner in
which differential ports are treated.

momentum_01_02

Page 34

Placing and Defining Ports


Defining a Coplanar Port
Note

Momentum Seminar

Coplanar ports can be applied to objects on slot layers only.

Choose Momentum > Port Editor.


Select the port that you want to assign this type to. Note the port
number.
In the Port Editor dialog box, under Port Type, select Coplanar.
Under Polarity, make sure that Normal is selected.
Click Apply.
Select the second port.
In the Port Editor dialog box, under Port Type, select Coplanar.
Under Polarity, select Reversed.
Under Associate with port number, enter the number of the
previously-selected port.
Click Apply.
Repeat these steps for other differential port pairs in the circuit.
Click OK to dismiss the dialog box.

momentum_01_02

Page 35

Placing and Defining Ports


Coplanar Port Example: examples/Momentum/Microwave/CPW_bend_prj

Momentum Seminar

momentum_01_02

Page 36

Placing and Defining Ports


Coplanar Port Example: examples/Momentum/Microwave/CPW_bend_prj

Momentum Seminar

momentum_01_02

Page 37

Placing and Defining Ports


Coplanar Port Example

Momentum Seminar

Note: Visualization
displays the magnetic
currents (not the
electrical currents) for
slot metallizations.
Therefore, slots are
visualized and not metal.

momentum_01_02

Page 38

Placing and Defining Ports


Common Mode Port Properties

Note: Can also be utilized for


thick conductor simulations
(more on this later)

Use common mode ports in designs where the polarity of fields is the same among two
or more ports (even modes propagate). The associated ports are excited with the same
absolute potential and are given the same port number.

Common mode ports have the following properties:


They can be applied to objects on strip layers only
A ground plane or other infinite metal (such as a cover) is required as part of the
design
Two or more ports can be associated
Associated ports are excited with the same absolute potential (and same polarity)
The ports must be on the same reference plane

Note Port numbers for common ports are treated in the following
manner: on the layout, you will continue to see the port numbers
(instance names) that were assigned to each port when they were
added to the layout. Use the Momentum Port Editor dialog box to
identify which group of ports will be treated as a common port.
Also, when you view results, you will see S-parameters for the common
port numbers. In the example above, the layout would show p1, p2, p3.
The S-parameter results will be for combinations of P1 only.

Momentum Seminar

momentum_01_02

Page 39

Placing and Defining Ports


Defining a Common Mode Port

Choose Momentum > Port Editor.


Select the port that you want to assign this type to. Note the port
number.
In the Port Editor dialog box, under Port Type, select Common
Mode.
Click Apply.
Select the second port.
In the Port Editor dialog box, under Port Type, select Common
Mode.
Under Associate with port number, enter the number of the port
that you selected first. Make sure that the value in the Associate
with port number field is the same for additional ports. For
example, if you were associating three ports and the first port was
assigned as port 1, for the second and third port, the value
entered into the Associate with port number field would be 1. (For
the first port you choose, no value is entered in this field.)
Click Apply.
Repeat these steps for other common mode ports in the circuit.
Click OK to dismiss the dialog box.

Momentum Seminar

momentum_01_02

Page 40

Placing and Defining Ports


Ground Reference Port
Ground references enable you to add explicit ground references to a circuit, which may
be necessary if implicit grounds are in your design.
Implicit ground is the potential at infinity, and it is made available to the circuit through
the closest infinite metal layer of the substrate. Implicit grounds are used with internal
ports and with single ports that are connected to objects on strip metallization layers.
There are instances where the distance between a port and its implicit ground is too
large electrically, or there are no infinite metal layers defined in the substrate. In these
cases, you need to add explicit ground references to ensure accurate simulation results.
For more information on using ground references, refer to "Simulating with Internal
Ports and Ground References" on page A-10 in the Momentum manual.

You can apply ground references to the surfaces of object. The object must be on strip
metallization layers.
Note: Multiple ground reference ports can be associated with the same port. To be
associated with a single port, the ground reference port should be a port attached to an
edge of an object in the same reference plane as the single port.

Momentum Seminar

momentum_01_02

Page 41

Placing and Defining Ports


Defining a Ground Reference Port

Choose Momentum > Port Editor.


Select the port that you want to assign as the ground reference.
In the Port Editor dialog box, under Port Type, select Ground Reference.
Under Associate with port number, enter the number of the single or
internal port that you want to associate with this ground reference. Make
sure that the distance between the port and ground reference is electrically
small.
Click Apply.

Momentum Seminar

momentum_01_02

Page 42

Placing and Defining Ports


CPW with Finite Ground Planes using INTERNAL and GROUND REF ports

Ports 1 and 2 are internal.


Ports 3, 4, 5, and 6 are ground reference . The grounds are
associated with the internal port using the editor.
Momentum Seminar

momentum_01_02

Page 43

Placing and Defining Ports


Remapping Port Numbers
Some designs contain non-consecutive port numbers. This results in simulation data files that
are difficult to use. When Momentum simulates designs containing non-consecutive port
numbers, the ports are remapped to consecutive numbers in the resulting data file. The
lowest port number is remapped to 1, and remaining numbers are remapped in consecutive
order. The port numbers are not changed in the design itself. A message in the Status
window announces the change, and lists the mappings.
For example, if you are simulating a design with ports numbered 37 and 101, the following
status message informs you of the changes:

Layout has non-consecutive port numbers.


Output files will have consecutive port numbers.
layout port -> output port
37 -> 1
101 -> 2
Port number remapping is done only for sampled and AFS CITIfiles and their corresponding
S-parameter datasets. It is not done for Visualization and far field files. The remapping is
done at the CITIfile level, and propagates to the dataset file. After remapping, all datasets
are in sync with the new port numbering.

Momentum Seminar

momentum_01_02

Page 44

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9597EN

Agilent EEsof EDA


Detailed Presentation on Momentum - Part 2 of 3

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Details of Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results

Momentum Seminar

momentum_01_03

Page 1

Defining Mesh Parameters


Mesh Setup Control
Global mesh is the default.
But you have choices.

In general, small
patterns are more
accurate but take
more time to solve.

Momentum Seminar

momentum_01_03

Page 2

Defining Mesh Parameters


Global Mesh example with Edge Mesh
1 - Port
2 - Calibration Line

Here, the cell size is the same for


all parts of the geometry, except for
the edges around each primitive.

3 - Mesh
4 - Edge Mesh

4
3

The calibration line


is automatically
drawn when the
port is defined more on this later.

1
NOTE: You can view the mesh, ports, and reference line
before simulating and make adjustments if desired.

Momentum Seminar

momentum_01_03

Page 3

Defining Mesh Parameters


Primitive Mesh example
You can combine primitive mesh,
layer mesh, and global mesh.

The center primitive of this geometry has a


different mesh (50 cells/wavelength) than the two
outside geometries (20 cells/wavelength).
1
2

Next, lets discuss ports...

Momentum Seminar

momentum_01_03

Page 4

Discretion Error - Longitudinal


Number of cells/wavelength
determines samples used for
approximation of true currents
Typical cells/wavelength is 20
30 or more is fine, but will slow down
the simulation
Minimum required to retain highfrequency accuracy is 10
Can retain accuracy AND speed with
10 cells/wavelength AND edge mesh
Remember, can also have layer-specific
meshes (or even object-specific
meshes) which allows finer meshes
where needed and coarser meshes
where current density is not as high
(such as a finite ground plane)
Momentum Seminar

momentum_01_03

Page 5

Edge Mesh Accuracy

Momentum Seminar

momentum_01_03

Page 6

Mesh: Momentum versus MomentumRF


Momentum RF & Polygon Mesh

Meshing complex geometries with POLYGONAL cells


Eliminates slivery triangles
Eliminates redundant R,L,C elements
Uncompromised accuracy for RF frequencies
Strongly reduced computer memory
Strongly reduced computation time

10
cells

reduction

4
cells

1
cell

reduction

mesh

Momentum Seminar

topology

momentum_01_03

Page 7

Using Momentum

Method of Moments
Maxwells Equations

Solution process
Select Mode
Substrate definition

Matrix Equation
[Z].[I]=[V]
Equivalent Circuit
[Z] = [R] + j[L] + 1/j [C]-1

B1(r)

B3(r)

B2(r)

I3

/10
I1
L1
1C
1
1

L12

L1
3I2

L23

R22 L22

I3
L33

C22

C12

Port Setup
Mesh Generation
Planar Solve
Display Results

Momentum Seminar

momentum_01_03

Page 8

The Low-frequency Breakdown Problem


This problem is essentially one of mathematical aspect ratios. When rooftop basis
functions are used, the interaction matrix contains all of the reactances in a single
matrix. As frequency approaches zero, the inductive reactances approach zero while the
capacitive reactances approach infinity. This results in an ill-conditioned matrix.
Any tool that uses rooftop functions as the sub-sectional basis functions will have this
problem.
Momentum (not Momentum RF) experiences this low-frequency limitation. To help
account for this, interpolation is used for three frequencies (in addition to the selected
sweeps): DC, f0, and 2f0. The low-frequency limit (f0, typically in kHz), which is
selected in an empirical way and is a function of cell edge lengths and substrate height,
increases as cell sizes decrease (resulting in shorter edges).
Momentum RF alleviates this problem by breaking the rooftop functions into
star and loop basis functions.

Momentum Seminar

momentum_01_03

Page 9

MomentumRF & Star-Loop Basis Functions


1
2

loop basis function

star basis function

db(S11)
Loop basis functions are solenoidal
Star basis functions are irrotational

- give well-conditioned interaction


matrix at low frequencies
- eliminate LF breakdown of
numerical solution
- give stable, accurate solutions
down to DC (both magnitude and
phase)

Momentum Seminar

db(S21)

Rooftop basis functions

db(S21)

db(S11)

Star-loop basis functions

momentum_01_03

Page 10

Using Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results

More on this in the next section


Momentum Seminar

momentum_01_03

Page 11

Momentum Accuracy: A couple of absolutes

Directly simulated frequency points have 60 dB accuracy. (This noise floor was
characterized on through-lines. In other words, the observed numerical noise on
those structures is ~ -60 dB. This does not mean that valid results of < -60 dB
can not be obtained for designs with an isolation or other figure of merit that is <
-60 dB.)

For an AFS sweep, the simulated frequency points have 60 dB accuracy while the
AFS calculated frequency points have ~ 50 to 60 dB accuracy

The rest depends on how accurately you can define your problem.

Here are a few benchmarks

Momentum Seminar

momentum_01_03

Page 12

LTCC Filter Design


Momentum
Momentum RF
Measurements

AIR
[3]
[2]

7.2 mil
3.6 mil

[1]

25.2 mil

LTCC
GND

dB(S21)

7.29
mm

Momentum

(*) Example

Momentum RF

Mesh: 20 cells/wavelength, 3 GHz


Frequencies: 14

Mesh: 20 cells/wavelength, 3 GHz


Frequencies: 10

Matrix size
Process size
User time

Matrix size
Process size
User time

: 218
: 14.13 MB
: 5 m 14 s

: 56
: 7.59 MB
: 45 s

phase(S21)

from National Semiconductor

Momentum Seminar

momentum_01_03

Page 13

RFIC/MMIC Applications
AIR

Momentum
Momentum RF
Measurements

r=3.9
r=3.9

[3]
[2]

1.55 um
1.7 um

[1]

600 um Silicon =12.5


GND

dB(S11)

0.30
mm

0.80
mm

Momentum

Momentum RF

Mesh: 20 cells/wavelength, 5 GHz


Frequencies: 7

Mesh: 20 cells/wavelength, 5 GHz


Frequencies: 7

Matrix size
Process size
User time

Matrix size
Process size
User time

: 274
: 10.29 MB
: 11m 09s

PC-NT Pentium II workstation (330 MHz)

Momentum Seminar

: 35
: 3.33 MB
: 1m 39s

dB(S21)

Rule of thumb: freq < 176 GHz


momentum_01_03

Page 14

RFIC / MMIC Applications


Momentum
Momentum RF
Measurements

AIR
[1]

100 um

GaAs
GND

0.76
mm

1.65
mm

Momentum

Momentum RF

Mesh: 20 cells/wavelength, 50 GHz


Frequencies: 12

Mesh: 20 cells/wavelength, 50 GHz


Frequencies: 10

Matrix size
Process size
User time

Matrix size
Process size
User time

: 221
: 6.32 MB
: 2 m 03 s

PC-NT Pentium II workstation (330 MHz)

Momentum Seminar

: 203
: 4.50 MB
: 0 m 26 s

Rule of thumb: freq < 83.3 GHz


momentum_01_03

Page 15

Microwave Lowpass Filter (Stripline)


Momentum
Momentum RF
Measurements

GND
[2]

31 mil

Duroid

[1]

31 mil

Duroid

mag(S11)

GND

6.0 mm

25.4
mm
mag(S21)

Momentum

Momentum RF

Mesh: 20 cells/wavelength, 15 GHz


Frequencies: 20

Mesh: 20 cells/wavelength, 15 GHz


Frequencies: 15

Process size
User time

Process size
User time

: 18.07 MB
: 36 m 07 s

PC-NT Pentium II workstation (330 MHz)

Momentum Seminar

: 12.29 MB
: 2 m 21 s

Rule of thumb: freq < 5.76 GHz

momentum_01_03

Page 16

RF Board Power/Ground
AIR
[1]

59 mil

Momentum
Momentum RF
Measurements

FR4
GND

Momentum
Process size : 20.8 MB
User time
: 30 m 42 s

50.8
mm

P1

P2

Momentum RF
Process size : 15.0 MB
User time
: 4 m 41 s

76.2
mm
Momentum

50.8
mm

Process size : 20.2 MB


User time
: 50 m 29 s
P1

P2

76.2
mm

Momentum Seminar

Momentum RF
Process size : 17.0 MB
User time
: 5 m 33 s

PC-NT Pentium II workstation (330 MHz)


Rule of thumb: freq < 1.63 GHz

momentum_01_03

Page 17

RF Board Application
AIR
[1]

30 mil

FR4

FYI

rectangular & triangular mesh

GND

Momentum
Mesh: 20 cells/wavelength, 1 GHz
Ports: 60
Frequencies: 6

Matrix size
Process size
User time

35.60 mm
43.67 mm

: 3428
: 152.48 MB
: 11h 04m 51s

reduced polygonal mesh


Momentum RF
Mesh: 20 cells/wavelength, 1 GHz
Ports: 60
Frequencies: 6

Matrix size
Process size
User time

: 733
: 59.35 MB
: 48m 24s

Speed & Capacity


memory: 3 x
speed: 14 x

PC-NT Pentium II workstation (330 MHz)

Momentum Seminar

momentum_01_03

Page 18

Packaging Application

FYI
3
Vchip

4
ref 4
1

epoxi

ref 3

2
Vboard

FR4
GND

7.6 mm
port 4
port 3

ref 4
ref 3

port 2
port 1

S(1,1)

S(1,2)

S(1,3)

S(1,4)

7.6 mm

Momentum

Momentum RF

Mesh: 20 cells/wavelength, 5 GHz

Mesh: 20 cells/wavelength, 5 GHz

Matrix size
: 8244
Process size : > 1 GB
User time
: > 2 days

Matrix size
: 1354
Process size : 106.57 MB
User time
: 5h 17m 53s

PC-NT Pentium II workstation (330 MHz)


Momentum Seminar

Rule of thumb: freq < 13.8 GHz


momentum_01_03

Page 19

Microwave Applications

FYI
Momentum
Momentum RF

AIR
25 mil

[1]

mag(S11)

Alumina
GND

mag(S21)
6.65
mm
9.90
mm

Momentum

Momentum RF

Mesh: 10 cells/wavelength, 20 GHz


Frequencies: 18

Mesh: 10 cells/wavelength, 20 GHz


Frequencies: 14

Matrix size
Process size
User time

Matrix size
Process size
User time

: 181
: 2.92 MB
: 1 m 02 s

PC-NT Pentium II workstation (330 MHz)

Momentum Seminar

: 122
: 2.13 MB
: 0 m 09 s

radiated
power

Rule of thumb: freq < 12.5 GHz


momentum_01_03

Page 20

Microwave Applications

FYI
Momentum
Momentum RF

[2]

185 mil

AIR

[1]

25 mil

Alumina

mag(S11)

GND

5.21
mm
24.82 mm

Momentum

mag(S21)

Momentum RF

Mesh: 20 cells/wavelength, 7 GHz


Frequencies: 27

Mesh: 20 cells/wavelength, 7 GHz


Frequencies: 25

Process size
User time

Process size
User time

: 8.26 MB
: 7 m 53 s

PC-NT Pentium II workstation (330 MHz)

Momentum Seminar

: 4.75 MB
: 0 m 29 s

Rule of thumb: freq < 5.9 GHz

momentum_01_03

Page 21

Digital Application

FYI
full board

isolated trace
port 1
port 1

port 2
port 2

S(1,1)

S(1,2)

S(1,1)

S(1,2)

isolated trace

isolated trace

full board

full board

Momentum
Momentum RF

Momentum Seminar

momentum_01_03

Page 22

Digital Application

FYI

isolated trace
port 1

0.4 GHz
port 2

output

Momentum Seminar

S(1,1)

S(1,2)

isolated trace

isolated trace

momentum_01_03

Page 23

Digital Application

FYI

isolated trace

harmonic signal
2.33 GHz

port 1

port 2

no output

resonance

blocks the signal

Momentum Seminar

S(1,1)

S(1,2)

isolated trace

isolated trace

momentum_01_03

Page 24

Digital Application

FYI

harmonic signal
2.33 GHz

harmonic signal is coupled to neighboring traces


and spread around the board

Momentum Seminar

momentum_01_03

Page 25

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9598EN

Agilent EEsof EDA


Detailed Presentation on Momentum - Part 3 of 3

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_02_01

Page1

Momentum Datasets
Variables Available in the Standard Dataset
freq

Independent frequency variable

GAMMAn

Modal propagation constant of port n (calculated for single,


differential, and coplanar ports only)

PORTZn

Impedance of Port n

S-matrix, normalized to PORTZn

S(i,j)

S-parameters for each port pairing, normalized to PORTZn

S_50

S-matrix, normalized to 50 ohms

S_50(i,j)

S-parameters for each port pairing, normalized to 50 ohms

S_Z0

S-matrix, normalized to Z0

S_Z0(i,j)

S-parameters for each port pairing, normalized to Z0 of each port

Z0n

Characteristic impedance of Port n (calculated for single,


differential, and coplanar ports only, others are 50 ohms)

(Note that these are included in the datasets for Momentum simulations but not for MomentumRF)
Momentum Seminar

momentum_02_01

Page2

Momentum Datasets
Variables Available in the AFS Dataset
All standard dataset variables, plus
S_CONV

Boolean results for AFS convergence (success=1, fail=0)


of the entire S-matrix at a given frequency

S_CONV(i,j)

Boolean results for AFS convergence (success=1, fail=0)


of S(i,j) at a given frequency

S_ERROR

Estimated error of the entire S-matrix at a given frequency


(< -60 dB for converged frequency points)

S_ERROR(i,j)

Estimated error of S(i,j) at a given frequency


(< -60 dB for converged frequency points)

Momentum Seminar

momentum_02_01

Page3

Adaptive Frequency Sampling

Simple Answer to Convergence


AFS has converged unless it tells you that it hasn't converged (e.g., when the max number of points
that you specified was too low)

Momentum Seminar

momentum_02_01

Page4

AFS Convergence Illustration

Momentum Seminar

momentum_02_01

Page5

AFS Convergence

Momentum Seminar

momentum_02_01

Page6

Momentum Datasets
Variables Available in the Far-field Dataset

THETA

Swept parameter of planar cut

PHI

Swept parameter of conical cut

Etheta & Ephi

Absolute E field strength (V) of theta and phi far-field components

Htheta & Hphi

Absolute H field strength (A) of theta and phi far-field components

Elhp & Erhp

Normalized E field strength of LHCP and RHCP far-field components

ARcp

Axial ratio, derived from LHCP and RHCP far-field components

Eco & Ecross

Normalized E field strength of co and cross polarized far-field comp

ARlp

Linear polarization axial ratio, derived from co and cross polarized


far-field components

Gain, Directivity Gain, Directivity, Efficiency (in %), and Effective area (in m2)
Efficiency,
Effective Area
Power

Momentum Seminar

Radiation intensity (in watts/steradian)


momentum_02_01

Page7

Momentum Visualization
Momentum Visualization Enables You to View and Analyze...
Currents (surface currents)
S-parameters (mag, re, im, phase, and dB of S(i,j))
Transmission line data (propagation constant, characteristic impedance)
Far-fields (radiation patterns & axial ratio in 3D and 2D)
Antenna parameters (gain, directivity, pointing angle, etc.)

Momentum Seminar

momentum_02_01

Page8

Momentum Visualization: Surface Currents


When you scroll from 0-360,
you are actually varying the
phase which illustrates the
e^jwt time dependency of
the surface currents
The lower and upper values input
into these fields represents the
lowest and highest values of the
surface current density (A/m)
which will be viewed
You also have the
option to look at the
animated currents
when click on the
Display Properties
button

Note that you can also see the


effects of an edge mesh in the
current visualization (the skin
effect is emphasized)

Note: when you are viewing the results for a slot metallization layer, the MAGNETIC currents are plotted instead of the
ELECTRIC currents. You will also be viewing the mesh in the slots instead of a mesh on the conductors when viewing the
mesh for a slot layer.
Momentum Seminar

momentum_02_01

Page9

Momentum Visualization: Surface Currents

Momentum Seminar

momentum_02_01

Page10

Momentum Visualization:
Far-field Radiation Patterns and S-parameters

Radiation Patterns are


only available with
Momentum results, not
MomentumRF

Momentum Seminar

momentum_02_01

Page11

ADS Data Display: S-parameters, L, and Q of an Inductor


Powerful post processing data display allows you to take
advantage of countless built-in functions and provides the
flexibility to wrote your own (through both measurement
equations in a schematic or equations in a data display page).

Momentum Seminar

momentum_02_01

Page12

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9599EN

Agilent EEsof EDA


Detailed Presentation on Momentum Advanced
Topics - (Part 1 of 5)

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_03_01

Page 1

Momentum Component (EM/circuit co-simulation)


EM/Circuit co-simulation from the
schematic environment
Transparent integration of electromagnetic
simulators at the schematic design level
Include physical layout parasitics in
schematic

Layout setup
Momentum Component Generation

Momentum simulation options accessible


from schematic
Compiled Layout Components listed in
projects hierarchy

ADS circuit simulation

Model database for reuse option


ADS 2002C: EM/Circuit cooptimization

Momentum Seminar

momentum_03_01

Page 2

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher
EM/Circuit co-simulation from the
schematic environment

C:\ADS2002\Examples\Momentum\emcktcosim\LTCC_prj
Momentum Seminar

momentum_03_01

Page 3

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher
EM/Circuit co-simulation from the
schematic environment

C:\ADS2002\Examples\Momentum\emcktcosim\LNAEmCktCosim_prj

Momentum Seminar

momentum_03_01

Page 4

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher

2.

Example begins with schematic of LNA


and uses Layout>Generate/Update
Layout to create artwork

Note that vendor component libraries


were utilized for lumped element and
active device artwork. Also note that
a ground plane has been added with
uniform clearance around
traces/components.

Momentum Seminar

momentum_03_01

Page 5

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher

3.

A symbol is defined for the schematic


subcircuit and then it is placed in a top
level design for simulation using the
component library browser. (The
results of this simulation will be
compared to the results of the next
simulation, which will include the
physical effects.)

Momentum Seminar

momentum_03_01

Page 6

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher

Momentum Seminar

4.

The artwork is now modified to


include the vias (to connect the
poured ground plane to the explicit
ground plane) and ports are placed at
all connection points (input, output,
bias, and on each node of the lumped
elements)

momentum_03_01

Page 7

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

5.

Layout/Momentum
Component parameters
will be discussed more
later (co-optimization)

The standard example is then slightly


modified to include layout component
parameters (new in ADS 2002C).
These parameters will be used to see
the effects of a via location on gain.
Modified version provided:
(LNAEmCktCosim_prj.zap)

Momentum Seminar

momentum_03_01

Page 8

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

6.

The Layout/Momentum component is


then created

Momentum Seminar

momentum_03_01

Page 9

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

7.

Next, the Layout/Momentum component is placed in a schematic using the component library browser (just
like any other subcircuit/component). All of the lumped elements and the active device are then connected to
the pins (ports in layout are replaced with pins in the Momentum Component symbol).

Momentum Seminar

momentum_03_01

Page 10

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

8.

Once the model details are selected (Mode MomMW, MomRF, or data file; Frequency range; Mesh
properties), the parameters of the Layout/Momentum component are then defined to be variables, which will
be passed down from the top design. This is made possible by the next step, which uses the File>Design
Parameters submenu.

Momentum Seminar

momentum_03_01

Page 11

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

9.

The variables are now defined for this subcircuit. Note that we could have just placed the Layout/Momentum
component directly into the top level schematic, but this illustrates two methods of parameterization in a
schematic.

Momentum Seminar

momentum_03_01

Page 12

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

10. The subcircuit that includes the


Layout/Momentum component is then
placed in a top level design for
simulation using the component
library browser. (The results of this
simulation will be compared to the
results of the original simulation,
which did not include the physical
effects.)
Momentum Seminar

11. Note the use of variables which are


swept using the Parameter Sweep
component.
momentum_03_01

Page 13

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

Modified version provided:


(LNAEmCktCosim_prj.zap)

Momentum Seminar

12. When each iteration of the S-parameter


simulation encounters the
Layout/Momentum component with
new values for parameters, a
Momentum simulation is also
automatically invoked in the
background (for each case that was
not previously solved).
momentum_03_01

Page 14

Momentum Component (EM/circuit co-simulation)


Example included in ADS 2002 & higher (slightly modified)

13. Finally, the results from each approach


are compared. Surface currents for
the Momentum component (layout) can
also be studied using Visualization.

Modified version provided:


(LNAEmCktCosim_prj.zap)
Momentum Seminar

Initial schematic simulation


Momentum component in schematic
Momentum component in schematic
with swept variable for via location

momentum_03_01

Page 15

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters

NEW in ADS 2002C

Enables to sweep, tune or optimize geometrical variations in the


layout
- typical dimensions (length, width, gaps, spacing,)
- interdependent layout modifications (e.g. length and width varying simultaneously)
- port locations

Two ways to create a parameterized layout component


1. Using nominal/perturbed layout artwork (Momentum Optimization)

Nominal/Perturbed layout parameter


2. Using existing (built-in or GCC defined) layout artwork macros

Subnetwork layout parameter


Momentum Seminar

momentum_03_01

Page 16

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters
Momentum > Component > Parameters
Opens the Layout Component Parameters dialog

Momentum Seminar

momentum_03_01

Page 17

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters
Defining a Nominal/Perturbed Layout Parameter

Define the name of the parameter


Define the type of parameter
Enter the nominal value
Enter the perturbed value
Edit the perturbation

if no AEL artwork macro available


Momentum Seminar

momentum_03_01

Page 18

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters

Steps
1. Select points in layout
2. Select perturbation type
3. Insert perturbation values
4. Apply the perturbation
Repeat these steps
Click OK to terminate

AEL artwork macro is created


primitive layout component
Momentum Seminar

momentum_03_01

Page 19

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters to a Subnetwork
Defining a Subnetwork Layout Parameter

Define the name of the parameter


Define the type of parameter
Enter the default value
Associate the parameter with a
subnetwork parameter

If artwork macro IS available


hierarchical layout component
Momentum Seminar

momentum_03_01

Page 20

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters to a Subnetwork
Use the subnetwork layout parameter to set the parameter values of one or
more subnetwork parameters in the design

Momentum Seminar

momentum_03_01

Page 21

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Creating a Component
Momentum > Component > Create/Update
Opens the Create Momentum Component dialog
Dialog Entries: Symbol, Model Parameters and Model Database

These parameters are a


subset of the
Momentum simulation
control options in the
Layout Environment and
can be set from within
the Schematic
Environment

Momentum Seminar

momentum_03_01

Page 22

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
EM Model Database
The simulated S-parameter models are
stored in an EM Model Database for later
reuse

During the Component Create/Update, the


user has the option to:
- delete all previous entries in the model
database
- add the last simulation results obtained
from Momentum simulation in Layout to
the model database

Momentum Seminar

momentum_03_01

Page 23

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Instance Parameter Dialog
Double clicking on the Layout Component Instances in the Schematic Design
Environment opens the Instance Parameter Dialog
In the Model Page, the user can specify the
- Model Type selection
- Model Parameter values
- Model Database Reuse option

In the Parameters Page, the user can


specify the layout parameter values and
the optimization setup (optional)
In the Display Page, the user can specify
which model parameters are visible in the
schematic design

Momentum Seminar

momentum_03_01

Page 24

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Model Interpolation
Instance Dialog box
The EM model database can use
interpolation to significantly enhance
the efficiency of the co-simulation
The Layout Parameters are treated as
continuous parameters
Pushing the Options.. button brings up
the Set Interpolation Options dialog
Allows to specify the interpolation delta
values for each layout parameter
Default values for the interpolation deltas are
provided (derived from the model parameters)

Momentum Seminar

momentum_03_01

Page 25

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 26

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 27

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 28

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 29

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 30

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 31

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 32

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 33

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 34

Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)

Electronic
notebook for
LTCC
EM/circuit cooptimization
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/LTCC_prj
momentum_03_01

Page 35

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9600EN

Agilent EEsof EDA


Detailed Presentation on Momentum Advanced
Topics - (Part 2 of 5)

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_03_02

Page 1

An Aside: Vias in Momentum

1. Polygon
2. Rectangle or square
3. Polyline

Vias must be mapped


through each individual
substrate layer they pass
through

For vias, only vertical currents and surface impedances are taken into account (for now). Keep in
mind that the horizontal and rotational currents are not included. One possible trick that might
be used to obtain more complete current calculations is to break up the via structure (could be any
shape, even that of a transmission line or spiral inductor) into a few thinner layers and include the
geometry on horizontal metallization layers as well. Make sure that provide the conductivity and
thickness parameters for only one of the horizontal metallization layers; otherwise, excess loss
will be calculated.

Momentum Seminar

momentum_03_02

Page 2

An Aside: Vias in Momentum

Vias are treated as one cell (in the vertical axis);


therefore, the thickness of substrates which
contain vias is limited to ~ 1/10th to 1/20th of
a wavelength (at the highest simulation
frequency). Vias passing through thicker
substrates can be accurately represented by
splitting these thick substrates into multiple
layers.

Please note that you can view both the mesh


and the surface current density (A/m) of via
structures using Momentum Visualization

Momentum Seminar

momentum_03_02

Page 3

Thick Conductor Simulations


Momentum model Finite Thickness Conductors
Zero thickness approach
loss formulation
Finite thickness approach
loss formulation
current modeling

Momentum Seminar

momentum_03_02

Page 4

Thick Conductor Simulations


Conductor Loss in Momentum: Zero Thickness Approach
The Surface Impedance Concept is used to model
conductor losses in metallizations

3D conductor

Zs(t,,)
Sheet conductor

The Surface Impedance Model Zs(t,,) takes the finite


thickness and frequency dependency (skin effect) of the
conductor loss into account

Momentum Seminar

momentum_03_02

Page 5

Thick Conductor Simulations


Conductor Loss in Momentum: Zero Thickness Approach
The Surface Impedance formula:
Zs =

j
coth ( c t )
+ j

c =

j ( + j )

>>

Zs =

s =

LF :

Zs =

1
t

LF currents run in entire cross


section of the metalization

HF :

Zs =

(1 + j )
s

HF currents run in SINGLE skin


depth surface layer

Skin depth
=4.5e7 S/m

Momentum Seminar

(1 + j ) t
(1 + j )
coth
s
s

1 MHz
10MHz
100MHz
1 GHz

75 m
23.7 m
7.5 m
2.37 m
momentum_03_02

Page 6

Thick Conductor Simulations


Conductor Loss in Momentum: Finite Thickness Approach
3D conductors:

drawn on 2 layers (, t/2) connected with vias


LF :

t/2

LF currents run in entire cross


section of the metalization

HF :

Zs(t/2,,) for top and


bottom metalization layer

HF currents run in DOUBLE


skin depth surface layer

Better loss modeling


Better current modeling (inductive)
Momentum Seminar

momentum_03_02

Page 7

Thick Conductor Simulations


Current Modeling in Momentum for 3D Conductors

y
x

Momentum Seminar

x,y surface currents on top and bottom of finite thickness conductor


z-surface currents on vias (side walls of finite thickness conductor)
momentum_03_02

Page 8

Thick Conductor Simulations


Conductor Loss in Momentum - what to use?
w

Rule of thumb:

t
h
ground plane
w/t > 5
h/w > 10

Use 1 zero thickness conductor with correct loss specification (thickness, conductivity)

, t

other cases
2 metallization layers + vias

Momentum Seminar

, t/2
, t/2

strip
via
strip

momentum_03_02

Page 9

Thick-conductor Approach: Two Approaches


thick conductor

, t/2
, t/2

layer2: , t/2

layer3: perfect conductor

2 metallization layers + vias


strip
via
strip

Air (E0)
Substrate (Er)

layer1: , t/2

Port 1

Port 1

Port 3

Port 2

Port 2

Port 4

For Single Trace Stimulus:


Common-mode ports
Momentum Seminar

For Two or More Coupled Traces:


Single ports in layout, recombine as common-mode in schematic
momentum_03_02

Page 10

Thick-conductor Approach: For Single Trace Stimulus

Port 4
Port 2

Example:
Ports 1&3 are associated as
common-mode ports, as are
ports 2&4

Port 3
Port 1

For Single Trace Stimulus:


Common-mode ports in Layout/Momentum are fine
Momentum Seminar

momentum_03_02

Page 11

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_03_02

Page 12

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: initial layout for filter generated
from schematic (substrate definition also updated from schematic)
filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn

Momentum Seminar

momentum_03_02

Page 13

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: verify substrate and
metallization definitions

filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn

Momentum Seminar

momentum_03_02

Page 14

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: initial MomentumRF simulation

filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn

Momentum Seminar

momentum_03_02

Page 15

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: save as new design and flatten
components to enable copy-to-layer for the thick-conductor method
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 16

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: now begin copying the artwork
to the first two additional layers
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 17

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: now copy the artwork to the
second of two additional layers
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 18

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: modify substrate definitions to
include another substrate layer that is the thickness of the metal
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 19

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: map one of the copied artwork
layers as a strip conductor above the new conductor substrate and
the other as a via in the new conductor substrate
Define the top and bottom conductors with
the proper conductivity and ONE-HALF
the total conductor thickness.

filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 20

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: place additional port on the
newly mapped strip conductor layer at each original port location
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 21

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: assign and associate the
overlapping ports as common-mode ports
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 22

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: define frequency sweep and
simulate
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn

Momentum Seminar

momentum_03_02

Page 23

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: something to REMEMBER!

REMEMBER:
Vias may not coincide with a port or touch a port.

So how is this simulation accomplished?

Momentum Seminar

momentum_03_02

Page 24

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example
By slightly moving the coincident edge of the via layer
so that it no longer touches the port!
Step 1. Begin by making the via layer the only selectable layer

Momentum Seminar

momentum_03_02

Page 25

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Step 2. Drag a selection box around the edge to be moved

Momentum Seminar

momentum_03_02

Page 26

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Step 3. Select the Move Relative tool

Momentum Seminar

momentum_03_02

Page 27

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Step 4. Enter a sufficiently small (but non-zero) distance to move the
edge so that it does not exactly overlap the port.

Momentum Seminar

momentum_03_02

Page 28

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Step 5. Zoom in to verify that the edge was indeed moved. Then repeat this for any other via edges that
coincided with a port. Now it is safe to simulate without errors.

Momentum Seminar

momentum_03_02

Page 29

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example: compare results for different approaches

filter_thick_metal_prj/compare_approaches.dds

Momentum Seminar

momentum_03_02

Page 30

Thick-conductor Approach: For Single Trace Stimulus


Microstrip Coupled-line Filter Example
filter_thick_metal_prj/compare_approaches.dds

Momentum Seminar

Note that for cases that do not include coupled port


stimuli, Momentum common-mode ports yield
correct results. This can be verified by re-defining
these ports as Single ports and then recombining
the ports as common-mode in a schematic. The
results are compared below (and are identical). We
will see that only the latter approach is valid for
cases that include coupled ports.

momentum_03_02

Page 31

Thick-conductor Approach: For Coupled Traces


Layout

Port 12

Port 11

Port 10

Port 6

Port 5

Port 4

Schematic
Port 7

Port 8

Port 9

Port 1

Port 2

Port 3

Term
Term1
Num=1
Z=50 Ohm

Term 6

Term 5

Term
Term1
Num=1
Z=50 Ohm

Term 4
Term
Term1
Num=1
Z=50 Ohm

Example:
Ports 1-12 are Single ports

Term 1

Term
Term1
Num=1
Z=50 Ohm

Term 2

Term
Term1
Num=1
Z=50 Ohm

Term 3

Term
Term1
Num=1
Z=50 Ohm

For Two or More Coupled Traces:


Use Single ports in the Layout Momentum Simulation
Recombine these results as common-mode ports in a schematic (this
will ensure port calibration for the coupled ports)
Momentum Seminar

momentum_03_02

Page 32

Thick-conductor Approach: For Coupled Traces


(When the Momentum Dataset is Available Method 1)
p_6 p_5 p_4

S-PARAMETERS
p_1

p_3

p_2

p_2

p_3

p_1

12

11

10

Ref
4

Using an SnP data item


(S12P in this example)

S_Param
SP1
Start=
Stop=
Step=

S12P
p_4 p_5 p_6
SNP1
File="coupled_lines_thick_momRF_50_single_ports.ds"
p_1
T erm
T erm1
Num=1
Z=50 Ohm

p_2
p_3
Term
Term
Term2
Term3
Num=2
Num=3
Z=50 Ohm
Z=50 Ohm

p_4
Term
Term4
Num=4
Z=50 Ohm

p_5
p_6
T erm
T erm
T erm5
T erm6
Num=5
Num=6
Z=50 Ohm
Z=50 Ohm

Tips/Tricks

Place an S2P
Data Item

Momentum Seminar

Use on Use S12P data


screen
item to access
editing to
dataset from
change S2P
Momentum
to S12P

OR

To reduce wiring confusion,


use wire/pin label tool to
make connections

momentum_03_02

Page 33

Thick-conductor Approach: For Coupled Traces


(When the Momentum Dataset is Available Method 2)
Lead_frame_package_thick_momRF_50_single_ports_component
Lead_frame_package_thick_momRF_50_single_ports_component_1
ModelType=Dataset
ModelFile=".\data\Lead_frame_package_thick_momRF_50_single_ports.ds"
p_1

p_6

p_2

p_5

p_3

p_4

Using a Layout/Momentum
Component as a data item
Be sure to select Dataset as the ModelType
(not Momentum MW or Momentum RF) and then
browse to the Momentum dataset that uses all
Single ports

Ref
p_1
Term
Term1
Num=1
Z=50 Ohm

p_2
p_3
Term
Term
Term2
Term3
Num=2
Num=3
Z=50 Ohm
Z=50 Ohm

p_4
Term
Term4
Num=4
Z=50 Ohm

p_5
p_6
Term
Term
Term5
Term6
Num=5
Num=6
Z=50 Ohm
Z=50 Ohm

S-PARAMETERS
S_Param
SP1
Start=
Stop=
Step=

Tips/Tricks

Use the component library


browser to place the
Momentum Component
Momentum Seminar

To reduce wiring confusion,


use wire/pin label tool to
make connections

Note that since the 12 layout ports in this


example need to be reconnected as 6
common-mode ports, it is acceptable (even
desirable) for the pin connections to short
together each pair of pins in this component
symbol. (It is impossible not to since the pins
co-exist from this top view of the layout.)
momentum_03_02

Page 34

Comments on Overlapping (Birds Eye View)


Ports in Momentum Layout Components
When would the pins in the Layout Component symbol overlap/short?
When common-mode ports overlap on different layout layers (same xy-coordinates,
different z-coordinates). You usually want these ports to be connected/shorted in the
schematic, as shown in the previous slide.
When internal ports and ground reference ports overlap on different layers (same xycoordinates, different z-coordinates). You usually DO NOT want the pins for internal
ports to overlap/short pins that represent the ground reference ports in the schematic.

Momentum Seminar

momentum_03_02

Page 35

Comments on Overlapping (Birds Eye View)


Ports in Momentum Layout Components
(Workarounds for cases when you DO NOT want the pins for internal
ports to overlap/short pins for ground references in the schematic)
How do I avoid shorting these pins together?

When the ports are attached to an edge, it doesn't matter WHERE on that edge the port is attached, because
the current is injected in a distributed manner along the edge. So, shifting the ground reference port(s)
slightly won't make any difference in the results. The Layout Component symbol will now reflect nonoverlapping pins for the internal and ground reference ports.

When the ports are point injection ports (in the middle of the metal) then shifting them WILL make a
difference in results, so be careful. So what are your options when this is the case?

Edit the symbol page of a layout component symbol! When the Layout component is created, edit its
symbol page and look for the port pins. You can move them a little in order to correctly use the ones
that are on top of each other. This will not change the results. I have tried this and it works! You just
need to be sure to remember which pin is which, or label them with text in the symbol.

Use the "black box" symbol, then all is fine. This would be less work than the prior suggestion, but it
would not be as "pretty.
The next example will also demonstrate this

Momentum Seminar

momentum_03_02

Page 36

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9601EN

Agilent EEsof EDA


Detailed Presentation on Momentum Advanced
Topics - (Part 3 of 5)

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_03_02

Page 1

Thick Conductor Simulations

coupled_lines_prj/mlayer_lib.dsn

Coupled Lines Example: starting in a schematic

Momentum Seminar

momentum_03_03

Page 1

Thick Conductor Simulations

coupled_lines_prj/mlayer_lib.dsn

Coupled Lines Example: Layout>Generate/Update Layout

Momentum Seminar

momentum_03_03

Page 2

Thick Conductor Simulations

coupled_lines_prj/mlayer_lib.dsn

Coupled Lines Example: Auto generated layout

Momentum Seminar

momentum_03_03

Page 3

Thick Conductor Simulations

coupled_lines_prj/mlayer_lib.dsn

Coupled Lines Example: Update substrate definition from schematic

Momentum Seminar

momentum_03_03

Page 4

Thick Conductor Simulations

coupled_lines_prj/mlayer_lib.dsn

Coupled Lines Example: verify substrate and map metal layers

Momentum Seminar

momentum_03_03

Page 5

Thick Conductor Simulations

coupled_lines_prj/mlayer_lib.dsn

Coupled Lines Example: edit/assign port types

Momentum Seminar

momentum_03_03

Page 6

Thick Conductor Simulations

coupled_lines_prj/mlayer_lib.dsn

Coupled Lines Example: flatten component

Momentum Seminar

momentum_03_03

Page 7

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_momRF_50.dsn

Coupled Lines Example: save as new design

Momentum Seminar

momentum_03_03

Page 8

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_momRF_50.dsn

Coupled Lines Example: setup mesh

Momentum Seminar

momentum_03_03

Page 9

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_momRF_50.dsn

Coupled Lines Example: setup simulation (zerothickness conductor standard approach)

Momentum Seminar

momentum_03_03

Page 10

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: save as new name to be used for


thick conductor approach

Momentum Seminar

momentum_03_03

Page 11

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: make an empty layer insertable

Momentum Seminar

momentum_03_03

Page 12

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: select original geometries

Momentum Seminar

momentum_03_03

Page 13

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: copy original geometries to the empty layer

Momentum Seminar

momentum_03_03

Page 14

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: make another empty layer insertable

Momentum Seminar

momentum_03_03

Page 15

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: copy geometries to this third layout layer

Momentum Seminar

momentum_03_03

Page 16

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: modify substrate to include a dummy layer for


the metal thickness and map the new (copied) via and strip layers

Note: the conductor


thickness has been split
between the top and
bottom strip layers that
form the new thick
conductor shell.

Momentum Seminar

momentum_03_03

Page 17

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: insert ports on the newly mapped top


metallization layer

Momentum Seminar

momentum_03_03

Page 18

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: assign/associate ports as common mode

Momentum Seminar

momentum_03_03

Page 19

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: setup the new simulation

Momentum Seminar

momentum_03_03

Page 20

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports.dsn

Coupled Lines Example: save as new name to be used for


New thick conductor approach

Momentum Seminar

momentum_03_03

Page 21

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports.dsn

Coupled Lines Example: re-define ports as Single ports

Momentum Seminar

momentum_03_03

Page 22

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports.dsn

Coupled Lines Example: setup the new simulation

Momentum Seminar

momentum_03_03

Page 23

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_schematic.dsn

Coupled Lines Example: now, recombine single port data as common-mode

Accomplished by either using an SnP data item


Momentum Seminar

momentum_03_03

Page 24

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_schematic.dsn

Coupled Lines Example: now, recombine single port data as common-mode

NOTE: IF the version of ADS that


you are using shows unconnected
pins (red diamond around pin)
when using this Layout
Component method, please edit
the Layout Component symbol so
that you can see both pins for
those that overlap. If the
connection is good (blue), then no
need to worry about this.

or by using a Layout/Momentum Component as a data item


Momentum Seminar

momentum_03_03

Page 25

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_schematic.dsn

Coupled Lines Example: re-defining Layout Component symbol

Step 1. Push into symbol in


schematic

Momentum Seminar

momentum_03_03

Page 26

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component.dsn

Coupled Lines Example: re-defining Layout Component symbol

Step 2. Enable symbol view

Momentum Seminar

momentum_03_03

Page 27

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component.dsn

Coupled Lines Example: re-defining Layout Component symbol

Step 3. Separate
overlapping pins by moving
one of each pair.

Momentum Seminar

momentum_03_03

Page 28

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_test.dsn

Coupled Lines Example: re-defining Layout Component symbol

Step 4. After separating all


overlapping pins, save the
design. Note that the
specific location of each pin
is inconsequential since this
is only the symbol, not the
actual artwork!
Momentum Seminar

momentum_03_03

Page 29

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_schematic_test.dsn

Coupled Lines Example: re-defining Layout Component symbol

Step 5. Now you can


successfully wire all pins.
(No more unconnected pins!)

Momentum Seminar

momentum_03_03

Page 30

Thick Conductor Simulations

coupled_lines_prj/compare_approaches.dds

Coupled Lines Example: open a data display to compare results

Please note the following details regarding this data display:


This data display contains 3 pages (return loss, insertion loss, and coupling
data)
There are actually 5 approaches being compared (which are all included in this
coupled_lines_prj project). The 5 designs are:

coupled_lines_momRF_50.dsn standard MomRF simulation using Single ports


coupled_lines_thick_momRF_50.dsn thick-metal simulation using common-mode ports
coupled_lines_thick_momRF_50_single.dsn thick-metal simulation using our legacy
approach with only one Single port per node
coupled_lines_thick_momRF_50_single_ports_schematic.dsn schematic re-combination
of MomRF simulation using TWO Single ports per node (using SnP data item)
coupled_lines_thick_momRF_50_single_ports_component_schematic_test.dsn schematic
re-combination of MomRF simulation using TWO Single ports per node (using Layout
Component as a data item)
Momentum Seminar

Approach #4 and approach #5


are equivalent AND are the best
method for this type of
simulation
momentum_03_03

Page 31

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: comparing return loss (log magnitude & phase)

Momentum Seminar

momentum_03_03

Page 32

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: comparing insertion loss (log magnitude & phase)

Momentum Seminar

momentum_03_03

Page 33

Thick Conductor Simulations

coupled_lines_prj/coupled_lines_thick_momRF_50.dsn

Coupled Lines Example: comparing coupling (log magnitude)

Momentum Seminar

momentum_03_03

Page 34

Thick Conductor Simulations


Coupled Lines Example: visualizing various approaches

Momentum Seminar

momentum_03_03

Page 35

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_03_03

Page 36

Spiral Inductor Simulations


Spiral Inductor simulation will be shown with the Advanced Model
Composer Lab

Ref

The project LTCC_example_AMC_prj illustrates co-simulation, swept parameters of a Layout component, cooptimization, and Advanced Model Composer capabilities for a multilayer LTCC spiral inductor. The
inductance (L) and quality factor (Q) are spiral_param
calculated for several parameter values (length of sides, length of
input line, length of output line). spiral_param_1
This highlights the usage of nominal/perturbed parameters.

An additional example is included for reference. The archived ADS


project is entitled AMC_lab1_prj.zap and is discussed in detail (with
specific steps to perform) in the presentation 2003A_physical_design.ppt.
This highlights the usage of subnetwork parameters.

Momentum Seminar

momentum_03_03

Page 37

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9602EN

Agilent EEsof EDA


Detailed Presentation on Momentum Advanced
Topics - (Part 4 of 5)

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_04_01

Page 1

Advanced Model Composer (new in ADS 2003A)

Previous ADS Capabilities


Model Composer ADS 2001
Fast & accurate circuit-level
passive parameterized models
created w/ Momentum EM
technology
Automated model generation
Patented MAPS technology
Custom standard-shape
microstrip & stripline libraries
and substrates
Generates model, symbol &
layout
Provided with Linear license
Momentum Seminar

New in ADS 2003A


Advanced Model Composer
Model Composer capabilities
plus:
Arbitrary user-defined
parameterized shapes
Passive components including
spiral inductors, TFR, etc.
No end-user license required for
use of model in schematic
Model generation uses AMC and
Momentum license
ADS Design Kit format

momentum_04_01

Page 2

Advanced Model Composer (new in ADS 2003A)

Previous ADS Capabilities


Integrated Momentum EM Simulator
Momentum RF

New in ADS 2003A


Advanced Model Composer
Arbitrary shapes

Model Composer
Co-Simulation w/Layout Components
Co-Optimization w/Layout Components
30 GHz transition

Parameterized
Creates Design Kit
Automated
Fast Simulation
No end-user license required
Momentum
Queuing/Batch processing

Momentum Seminar

momentum_04_01

Page 3

Advanced Model Composer (new in ADS 2003A)


Generate libraries for wide array of custom shaped parameterized passive
models, including:
Spiral inductors
Thin Film Resistors
MIM capacitors
Arbitrary shaped
matching networks
MomentumEM
EMengine
engine
Momentum
modelingsource
source
modeling
MAPSpatented
patentedtechnique
technique
MAPS
forcompact
compactmodel
modelfitting
fitting
for
GeneratedLibraries
Librariesdont
dont
Generated
requireusage
usagelicense
license
require
Momentum Seminar

momentum_04_01

Page 4

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_04_01

Page 5

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example that utilizes all of these capabilities!

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

Note that the starting point for this


design was the spiral.dsn included in
the LTCC emcktcosim project.
momentum_04_01

Page 6

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: baseline design to which we will add parameters

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 7

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: add first parameter for the input line length

Note that the perturbation will need to have a


magnitude of 50 um
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 8

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value

LTCC_example_AMC_prj/spiral_param_length_in.dsn
Momentum Seminar

momentum_04_01

Page 9

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: click OK to return to main design

LTCC_example_AMC_prj/spiral_param_length_in.dsn
Momentum Seminar

momentum_04_01

Page 10

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: now add parameter for output line length

Note that the perturbation will need to have a


magnitude of 50 um
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 11

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example : select the objects to be moved and enter the
perturbation type and value

LTCC_example_AMC_prj/spiral_param_length_out.dsn
Momentum Seminar

momentum_04_01

Page 12

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: click OK to return to main design

LTCC_example_AMC_prj/spiral_param_length_out.dsn
Momentum Seminar

momentum_04_01

Page 13

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: now add parameter for length of spiral sides

Note that each perturbation will need to have a


total magnitude of 100 um
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 14

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value

Stretch (shrink) objects on left side of spiral

LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Momentum Seminar

momentum_04_01

Page 15

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value

Stretch (shrink) objects on top side of spiral

LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Momentum Seminar

momentum_04_01

Page 16

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value

Stretch (shrink) objects on right side of spiral

LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Momentum Seminar

momentum_04_01

Page 17

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value

Stretch (shrink) objects on bottom side of spiral


LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Momentum Seminar

momentum_04_01

Page 18

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: click OK to return to main design

All sides are now 100 um shorter

LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Momentum Seminar

momentum_04_01

Page 19

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: click OK to accept parameters

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 20

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: create a layout component symbol for schematic use

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 21

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: click OK to create Layout Component symbol

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 22

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: use component library browser to locate a place an
instance of the Layout Component in a new schematic

LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar

momentum_04_01

Page 23

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: Layout Component placed, now setup simulation

LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar

momentum_04_01

Page 24

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: double-click Layout Component to verify model details

LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar

momentum_04_01

Page 25

Momentum Co-Simulation, Co-Optimization, and AMC

An LTCC Spiral example: now verify values of parameters (0  nominal value)

LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar

momentum_04_01

Page 26

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: baseline results for the Inductor

LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q)
Momentum Seminar

momentum_04_01

Page 27

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: baseline results for the Inductor (L & Q only)

LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q only)
Momentum Seminar

momentum_04_01

Page 28

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: setup a swept parameter simulation

LTCC_example_AMC_prj/spiral_param_schematic_sweep.dsn
Momentum Seminar

momentum_04_01

Page 29

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: view resulting L & Q for each parameter sweep

LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q only (swept params))
Momentum Seminar

momentum_04_01

Page 30

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: re-use swept cases to optimize for desired L & Q

LTCC_example_AMC_prj/spiral_param_schematic_optimize.dsn
Momentum Seminar

momentum_04_01

Page 31

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: optimized L & Q (and resulting parameter values)

LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q only (optimize))
Momentum Seminar

momentum_04_01

Page 32

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: create Advanced Model Composer model

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 33

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: define specific sweep types for model parameters

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 34

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: define specific sweep types for model parameters

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 35

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: during model generation, can view status at any time

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 36

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: can see status of current simulation, too

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 37

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: final status model generation complete

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 38

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: create design kit

LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar

momentum_04_01

Page 39

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: install design kit to access the AMC model

Momentum Seminar

momentum_04_01

Page 40

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: selecting the design kit files and installation level

Momentum Seminar

momentum_04_01

Page 41

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: successful installation of kit

Momentum Seminar

momentum_04_01

Page 42

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: use component library browser again to find AMC
model from installed design kit

LTCC_example_AMC_prj/spiral_param_schematic_sweep_AMC.dsn
Momentum Seminar

momentum_04_01

Page 43

Momentum Co-Simulation, Co-Optimization, and AMC

An LTCC Spiral example: select DK AMC model from Layout Components library

LTCC_example_AMC_prj/spiral_param_schematic_sweep_AMC.dsn
Momentum Seminar

momentum_04_01

Page 44

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: note that parameters are just as any standard
component, now (not a Momentum Layout Component) define values

LTCC_example_AMC_prj/spiral_param_schematic_sweep_AMC.dsn
Momentum Seminar

momentum_04_01

Page 45

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: compare swept parameter results to those from
Momentum Layout Component results

LTCC_example_AMC_prj/spiral_param_schematic.dds (page L and Q only (swept params, compare co-sim vs AMC))


Momentum Seminar

momentum_04_01

Page 46

Momentum Co-Simulation, Co-Optimization, and AMC


An LTCC Spiral example: optimize for L & Q using AMC model

LTCC_example_AMC_prj/spiral_param_schematic_optimize_AMC.dsn
Momentum Seminar

momentum_04_01

Page 47

Momentum Co-Simulation, Co-Optimization, and AMC

An LTCC Spiral example: compare results (desired L & Q values obtained with both AMC and
Momentum Layout Component if want same optimum parameter values, would need to
lock values of 2 params and optimize 1)
LTCC_example_AMC_prj/spiral_param_schematic.dds (page L and Q only (optimize, compare co-sim vs AMC))

Momentum Seminar

momentum_04_01

Page 48

Momentum Co-Optimization/Tuning
EM/circuit TUNING (layout/Momentum components with parameters)
Example: Tuning of layout parameters
microstrip coupled stubs
2 layout parameters: L1 and L2

L1

L2

Step 1. Parameter Sweep


to fill the EM model database

variable L1 = L2 = L mil
sweep L = 100 130 mil step 3 mil
L2 [mil]

m000

130

Coupled_stubs
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

100
100

130

L1 [mil]

examples/Momentum/emcktcosim/Coupled_Stubs_tune_prj
momentum_04_01

Page 49

Momentum Co-Optimization/Tuning
EM/circuit TUNING (layout/Momentum components with parameters)
Example: Tuning of layout parameter
Step 2. Set the Interpolation Delta equal to or greater than the distance
between the samples
L1-step = 3 mil
L2-step = 3 mil
Delta = 6 mil

Coupled_stubs
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

examples/Momentum/emcktcosim/Coupled_Stubs_tune_prj
momentum_04_01

Page 50

Momentum Co-Optimization/Tuning
EM/circuit TUNING (layout/Momentum components with parameters)
Example: Tuning of layout parameter
Step 3. Start the tuning session

Coupled_stubs
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar

momentum_04_01

Page 51

Note: Momentum Batch Mode Queue Manager


New in
ADS 2003A

Batch Mode Simulation

Batch mode simulations are setup and controlled using the Queue Manager dialog box. The Queue Manager is automatically started when
submitting a queued job, or it can be invoked by selecting Tools > Queue manager in the ADS Main window. Exiting ADS will stop the
Momentum queue and all running jobs.
When the queue is running in normal operation (queue connected), the first waiting job will automatically start after the current job
finishes. If the queue is in Queue Disconnected mode, then the first waiting job will not start automatically when the current job finishes.
When connected, the Queue Manager can be used to view jobs in the queue. When the queue is disconnected, or hasn't been started, the
Queue Manager not only can be used to view jobs in the queue but can also be used to add jobs, modify or delete scheduled jobs, or
change the order of jobs in the queue.

Note Jobs cannot be modified using the Queue Manager when they are currently active (simulating). To modify these jobs, disconnect
the queue, stop the simulation, (see Stopping a Simulation) make your modifications, and resume.
To run a batch mode simulation:
Define the design you want to simulate.
In the Momentum > Simulation > S- parameters dialog box, select Queued in the Process Mode and then select simulate.
Repeat the previous two steps to add additional simulations to the queue.
Select Start Simulations in the Queue Manager to begin simulating after all simulations are queued.

Note If the Queue Manager indicates that simulations are running when they are not, type
dialog box to fix the problem.

queue_reset() in the command line

Caution Running Momentum simulations in parallel (e.g., a direct Momentum simulation and a queued Momentum simulation)
from the same ADS session may cause the loss of simulation data if both simulations end simultaneously
Note When Momentum batch simulations are run from different projects, the active project directory changes when the
simulation finishes if a new one needs to be loaded from a different project.

Momentum Seminar

momentum_04_01

Page 52

Note: Momentum Batch Mode (Legacy Method)


This is discussed in great detail (with an included example project,
L_optimize_using_artwork_macro_prj.zap) in the appendix
provided in the seminar CD. This method also includes a legacy
parametric design capability.

Momentum Seminar

momentum_04_01

Page 53

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 22, 2003
5989-9603EN

Agilent EEsof EDA


Detailed Presentation on Momentum Advanced
Topics - (Part 5 of 5)

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

Agenda for Half-day Momentum Seminar


30 minutes

Brief overview of Getting Started with Momentum


Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters

30 minutes

Overview of Viewing and Using Momentum Results


Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.

60 minutes

Advanced Topics [Part 1]


Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}

15 minutes

Break

105 minutes

Advanced Topics [Part 2]


Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}

15 minutes

Final Q&A Session

4 hours 15 minutes

Momentum Seminar

momentum_04_01

Page 1

Extras Whats in the Folder?


Momentum Box/Waveguide Information
This is a topic for which some advanced users might want to
know the theory behind our implementation.
For a thorough discussion on how the standard waveguide and
box models are implemented, see the document:
Box_waveguide.pdf

Momentum Seminar

momentum_04_01

Page 2

Extras Whats in the Folder?


Momentum Configuration Information
Momentum config file.txt

Momentum Seminar

momentum_04_01

Page 3

Extras Whats in the Folder?


RLGC Netlist from MomentumRF Information
MomentumRF_RLGC_equivalent_circuit_netlist.ppt

Momentum Seminar

momentum_04_01

Page 4

Extras Whats in the Folder?


Material Properties DesignGuide

Momentum Seminar

Materials.deb

momentum_04_01

Page 5

Extras Whats in the Folder?


Material Properties DesignGuide

Momentum Seminar

Materials.deb

momentum_04_01

Page 6

Extras Whats in the Folder?


Material Properties DesignGuide

Momentum Seminar

Materials.deb

momentum_04_01

Page 7

Remember
Momentum Examples
Included with ADS

Momentum Seminar

momentum_04_01

Page 8

Remember Links to Additional Momentum Resources


Momentum Product Webpage:

http://eesof.tm.agilent.com/products/e8921a-a.html

Momentum Technical Articles Webpage:

http://eesof.tm.agilent.com/products/e8921a-b.html#Technical Articles

Co-simulation with Momentum Layout Components


(online demo): http://eesof.tm.agilent.com/demos/#usability
Free MomentumRF NetSeminar (from 2001):

http://netseminar.com/nss/showSeminar?sem_num=413

Advanced Model Composer Product Webpage:


AMC Technical Articles Webpage:

http://eesof.tm.agilent.com/products/e8926a-a.html

http://eesof.tm.agilent.com/products/e8926a-b.html#Technical Articles

Momentum Training Class Webpage: http://eesof.tm.agilent.com/products/e8921a-d.html#Training Classes


(also available as eTraining class): http://eesof.tm.agilent.com/education/etraining.html
Momentum Support Docs on Knowledge Center:
http://edasupportweb.soco.agilent.com:7778/portal/page?_pageid=36,34228&_dad=portal&_schema=PORTAL&cid=53737&a=1&lang=1

Momentum Support Examples on Knowledge Center:


http://edasupportweb.soco.agilent.com:7778/portal/page?_pageid=36,34228&_dad=portal&_schema=PORTAL&cid=8895

Momentum Discussion Forum on Knowledge Center:


http://edasupportweb.soco.agilent.com:7778/cgi-bin/yabb/YaBB.pl?board=ads_momentum

Momentum Manual (online version):


Knowledge Center:
Tech Support:
Momentum Seminar

http://eesof.tm.agilent.com/docs/adsdoc2002C/mom/index.html

http://www.agilent.com/find/eesof-knowledgecenter

http://www.agilent.com/find/eesof-support

momentum_04_01

Page 9

Wrap-up:

Momentum Seminar

Q&A

Questions?

momentum_04_01

Page 10

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 19, 2003
5989-9604EN

Agilent EEsof EDA


Momentum Appendix

This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:

www.agilent.com/nd/eesof

APPENDIX
Graphical Cell Compiler (GCC)
Momentum Batch Simulations
A Method for Utilizing Momentum Batch
Simulation Results in EM/circuit Cooptimizations (useful before true co-optimization
was introduced)

Momentum Optimization (a review of the


original capability)
Momentum Seminar

Page 1

Note: Momentum CAN be run in a batch mode

Obtain usermenu.ael and instructions from your local ADS Applications Engineer (AE).

Once you load usermenu.ael in your $HOME/hpeesof/de/ael directory (this is usually the
users/default/hpeesof/de/ael directory), restart ADS and you will see a new user menu in the layout window
that enables you to run Momentum in a batch mode.

You can even sweep the parameters of a parameterized design.

Momentum Seminar

Page 2

Momentum Optimization using Batch Simulation


First Step : Initial Layout entry (example using Graphical Cell Compiler)

This GCC macro was taken from


\ADS2003A\Examples\RF_Board
\GCC_examples_prj
Momentum Seminar

Page 3

Custom Layout Macros: Graphical Cell Compiler

FYI

ADS Components can call custom layout macros


Allows for Parameter-driven geometry creation
Layout Macros are AEL functions
Graphical Cell Compiler can be used to generate layout macros
Writing your own macros allows for extra flexibility:
-ports placed on specific layers
-rounding functions to keep ports on-grid
-custom warning or error messages
-physical dimensions calculated from electrical data
-Boolean flags to control layout - clockwise, counter-clockwise, etc.

Momentum Seminar

Page 4

Graphical Cell Compiler (Macro): Introduction

FYI

Purpose:
adding Parameterized Artwork Macros (PAM)
Advantages:
simpler than coding in AEL
getting started very quickly
create a special model quickly, without the need to know AEL

Momentum Seminar

Page 5

Graphical Cell Compiler

FYI

Macro control operations:


Stretch / Move
Flip / Rotate
Repeat
Polar
Viewer
Modify
Add
Delete
Detail
Compile

Momentum Seminar

Page 6

Graphical Cell Compiler

FYI

Stretch

Flip / Rotate

stretch = - 25 mil

rotation = 33

rotation = 90
original

original

stretch = 150 mil

rotation = 0

Polar

Repeat

original

polygon

original

rectangle

repeat x and y = 5 x 4

Momentum Seminar

circle

path
polyline

polar sweep PI radians

Page 7

GCC Example

FYI

C:\ADS2003A\Examples\RF_Board\GCC_examples_prj

Parameterized Inductor that is a


function of :

start with

turns
space
width
sides

becomes

Momentum Seminar

Page 8

GCC: How to build a PAM

FYI

1) Define the artwork graphically in a Layout window


2) Define parameters to control the artwork dimensions
3) Compile the macro
4) Set the parameter default values and save the macro
5) Insert the new component (macro) in a layout
6) Edit the parameters for each instance of the new component

Momentum Seminar

Page 9

GCC: How to build a PAM, Step 1

FYI

Define the artwork graphically in a Layout window


- the first step is to design your artwork macro

This artwork will be used as an element and will be able to be


- stretched in length
- stretched in width
- rotated
- repeated

Momentum Seminar

Page 10

GCC: How to build a PAM, Step 2

FYI

Define parameters to effect the artwork


Macro > Stretch
Macro > Repeat...
Macro > Width

Macro > Rotate/Mirror


Macro > Polar
Macro > User-Defined...

before defining parameters, draw construction lines


use the Macro toolbar to define parameters

Momentum Seminar

Page 11

GCC: How to build a PAM, Step 2

Momentum Seminar

FYI

Page 12

GCC: How to build a PAM, Step 3

FYI

Compile the macro


- Macro>Compile
- the macro will be saved as
<design_name>_art.ael
- the model name is the name
used to select the artwork
from the libary

Momentum Seminar

Page 13

GCC: How to build a PAM, Step 4

FYI

Set the parameter default values and save the macro:


Macro > Compile
File > Design/Parameters

In the General tab :


define the characteristics
of the sub-network

Momentum Seminar

Page 14

GCC: How to build a PAM, Step 4

FYI

In the Parameter tab :


- set the default values
- default values are used
when the PAM is placed

Momentum Seminar

Page 15

GCC: How to build a PAM, Step 5&6

FYI

Insert the new component (macro) in a layout


Edit the parameters for that instance of the new component
- parameters can be edited when the PAM is inserted or later

Momentum Seminar

Page 16

Momentum Optimization using Batch Simulation


First Step : Initial Layout entry (example using Graphical Cell Compiler)

Momentum Seminar

Page 17

Momentum Optimization using Batch Simulation


First Step : Initial Layout entry (place instance in new layout)

Momentum Seminar

Page 18

Momentum Optimization using Batch Simulation


First Step : Initial Layout entry (assign parameters and add ports)

Momentum Seminar

Page 19

Momentum Optimization using Batch Simulation


First Step : Initial Layout entry (enter substrate/metallization data)

Momentum Seminar

Page 20

Momentum Optimization using Batch Simulation


First Step : Initial Layout entry (enter mesh data)

Momentum Seminar

Page 21

Momentum Optimization using Batch Simulation


Second Step : use parametric design menu to generate designs

Momentum Seminar

Page 22

Momentum Optimization using Batch Simulation


Second Step : use parametric design menu to generate designs

Only bug in this unsupported AEL approach is that if you are sweeping a parameter that is
unitless, you will see these errors and will need to go into each design to delete the None text.
THIS WILL NOT OCCUR IF YOU ARE SWEEPING A PARAMETER THAT HAS UNITS.
Momentum Seminar

Page 23

Momentum Optimization using Batch Simulation


Second Step : use parametric design menu to generate designs

Momentum Seminar

Page 24

Momentum Optimization using Batch Simulation


Second Step : use parametric design menu to generate designs

Momentum Seminar

Page 25

Momentum Optimization using Batch Simulation


Second Step : use parametric design menu to generate designs

Momentum Seminar

Page 26

Momentum Optimization using Batch Simulation


Second Step : use parametric design menu to generate designs

Momentum Seminar

Page 27

Momentum Optimization using Batch Simulation


Third Step : prepare for Batch simulation (note that designs were
automatically added to que)

Momentum Seminar

Page 28

Momentum Optimization using Batch Simulation


Fourth Step : Batch simulation

Momentum Seminar

Page 29

Momentum Optimization using Batch Simulation


Fifth Step : create discrete model subcircuit (use DAC to access the
data)

Momentum Seminar

Page 30

Momentum Optimization using Batch Simulation


Fifth Step : create discrete model subcircuit (assign a parameter to
sweep through data using File>Design Parameters)

Momentum Seminar

Page 31

Momentum Optimization using Batch Simulation


Fifth Step : create discrete model subcircuit (create a symbol optional)

Momentum Seminar

Page 32

Momentum Optimization using Batch Simulation


Sixth Step : use discrete model subcircuit in top level schematic to
sweep data (use component library browser)

Momentum Seminar

Page 33

Momentum Optimization using Batch Simulation


Sixth Step : use discrete model subcircuit in top level schematic to
sweep data

Momentum Seminar

Page 34

Momentum Optimization using Batch Simulation


Sixth Step : use discrete model subcircuit in top level schematic to
sweep data (viewing swept data)

Momentum Seminar

Page 35

Momentum Optimization using Batch Simulation


Seventh Step : use the dataset from the simulation (which interpolated
data by means of S-parameter controller) and verify results vs discrete

Momentum Seminar

Page 36

Momentum Optimization using Batch Simulation


Seventh Step : use the dataset from the simulation (verify results vs
discrete swept data results)

Momentum Seminar

Page 37

Momentum Optimization using Batch Simulation


Eighth Step : now you can use the interpolated approach to simulate a
new case WITHOUT using Momentum again

Momentum Seminar

Page 38

Momentum Optimization using Batch Simulation


Eighth Step : now you can use the interpolated approach to simulate a
new case WITHOUT using Momentum again (view data)

Momentum Seminar

Page 39

Momentum Optimization using Batch Simulation


Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (optimizing for inductance)

Momentum Seminar

Page 40

Momentum Optimization using Batch Simulation


Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (optimizing for inductance viewing iterations)

Momentum Seminar

Page 41

Momentum Optimization using Batch Simulation


Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (update optimized value and re-simulate w/o opt)

Momentum Seminar

Page 42

Momentum Optimization using Batch Simulation


Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (viewing optimized results)

Momentum Seminar

Page 43

Momentum Optimization using Batch Simulation


Tenth Step : you could also setup other parameters to be swept or
optimized to achieve other desired performance/behavior

Momentum Seminar

Page 44

Momentum Optimization using Batch Simulation


Tenth Step : you could also setup other parameters to be swept or
optimized to achieve other desired performance/behavior

Note: No errors encountered since these parameters have units!

Momentum Seminar

Page 45

Momentum Optimization using Batch Simulation


Tenth Step : you could also setup other parameters to be swept or
optimized to achieve other desired performance/behavior

Momentum Seminar

Page 46

Momentum Optimization using Batch Simulation

Tenth Step : you could also setup other parameters to be swept or optimized to achieve
other desired performance/behavior (now use this data in a similar test bench to the
previous steps)

Momentum Seminar

Page 47

Momentum Optimization using Batch Simulation


That was a great capability, but is
there a more automated process?

Now there is! You can benefit from


both EM/circuit co-optimization and
Advanced Model Composer to
accomplish this and more!

Momentum Seminar

Page 48

Momentum Optimization

Another way to optimize...

EM/circuit co-optimization (layout/Momentum components with parameters)


Adding Layout Parameters

NEW in ADS 2002C

Enables to sweep, tune or optimize geometrical variations in the


layout
- typical dimensions (length, width, gaps, spacing,)
- interdependent layout modifications (e.g. length and width varying simultaneously)
- port locations

Two ways to create a parameterized layout component


1. Using nominal/perturbed layout artwork (Momentum Optimization)

Nominal/Perturbed layout parameter


2. Using existing (built-in or GCC defined) layout artwork macros

Subnetwork layout parameter


Momentum Seminar

Page 49

Advanced Model Composer (new in ADS 2003A)

Previous ADS Capabilities


Model Composer ADS 2001
Fast & accurate circuit-level
passive parameterized models
created w/ Momentum EM
technology
Automated model generation
Patented MAPS technology
Custom standard-shape
microstrip & stripline libraries
and substrates
Generates model, symbol &
layout
Provided with Linear license
Momentum Seminar

New in ADS 2003A


Advanced Model Composer
Model Composer capabilities
plus:
Arbitrary user-defined
parameterized shapes
Passive components including
spiral inductors, TFR, etc.
No end-user license required for
use of model in schematic
Model generation uses AMC and
Momentum license
ADS Design Kit format

Page 50

Advanced Model Composer (new in ADS 2003A)

Previous ADS Capabilities


Integrated Momentum EM Simulator
Momentum RF

New in ADS 2003A


Advanced Model Composer
Arbitrary shapes

Model Composer
Co-Simulation w/Layout Components
Co-Optimization w/Layout Components
30 GHz transition

Parameterized
Creates Design Kit
Automated
Fast Simulation
No end-user license required
Momentum
Queuing/Batch processing

Momentum Seminar

Page 51

Advanced Model Composer (new in ADS 2003A)


Generate libraries for wide array of custom shaped parameterized passive
models, including:
Spiral inductors
Thin Film Resistors
MIM capacitors
Arbitrary shaped

matching networks
MomentumEM
EMengine
engine
Momentum
modelingsource
source
modeling

MAPSpatented
patentedtechnique
technique
MAPS
forcompact
compactmodel
modelfitting
fitting
for
GeneratedLibraries
Librariesdont
dont
Generated
requireusage
usagelicense
license
require
Momentum Seminar

Page 52

Momentum Optimization
A Review of the Legacy Approach

Flashback!

Optimization means varying physical dimensions to


achieve S-parameter goals.

Momentum Seminar

Page 53

Momentum Optimization
A Review of the Legacy Approach: example included with ADS

C:\ADS2002\Examples\Momentum\optimization\double_folded_stub_filter_prj
Momentum Seminar

Page 54

Momentum Optimization
A Review of the Legacy Approach: Parameters used to perturb
Start here...
1

Name the variable


and set the values.

3
Nominal layout: line.dsn

W + W

20
Nominal
Value

Select the vertices that


represent the variable
(W). The result is
another layout.

25
4

Perturbed
Value

Perturbed layout: line_W.dsn

Momentum Seminar

Page 55

Momentum Optimization
A Review of the Legacy Approach: Optimization goals
Goals require Frequency values and
Response values (S-parameters).
1
Multiple goals can
2
be set up with various
weighting: For example,
W = 5 means the Error* is
multiplied by 5. The
greater the weight, the
greater the goal importance.
*Error for optimization is a
measure of how much the
goal differs from the
solution. Zero error means
the solution = goal.

Momentum Seminar

Activated = 0
Not Activated = X

Page 56

Momentum Optimization

A Review of the Legacy Approach: Optimization control

Optimization
status...

Goal achieved: Optimal value.

Momentum Seminar

Finally, simulate the optimized layout


and display the results.

Page 57

Momentum Optimization

A Review of the Legacy Approach: Summary of Tips

GEOMETRY:
Keep structures electrically small
Make the drawing as simple as possible
Take advantage of symmetries
Make text notes in the layout, schematic, or data displays for reference
OPTIMIZATION:
Make a written list of parameters and limit the number you use
Perform what-if analyses in ADS circuit simulator

In general, plan the base geometry for optimization.


Create geometry that allows modification of parameters.
But there are new ways to optimize...
See Momentum co-simulation/co-optimization and Advanced Model
Composer in the main presentation. Also, see Momentum batch
simulation content in this appendix.
Momentum Seminar

Page 58

For more information about


Agilent EEsof EDA, visit:

Agilent Email Updates


www.agilent.com/nd/emailupdates

www.agilent.com/nd/eesof

Get the latest information on the


products and applications you select.

www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:

www.agilent.com/nd/contactus
Agilent Direct
www.agilent.com/nd/agilentdirect

Quickly choose and use your test


equipment solutions with condence.

Americas
Canada
Latin America
United States

(877) 894-4414
305 269 7500
(800) 829-4444

Asia Pacic
Australia
China
Hong Kong
India
Japan
Korea
Malaysia
Singapore
Taiwan
Thailand

1 800 629 485


800 810 0189
800 938 693
1 800 112 929
0120 (421) 345
080 769 0800
1 800 888 848
1 800 375 8100
0800 047 866
1 800 226 008

Europe & Middle East


Austria
0820 87 44 11
Belgium
32 (0) 2 404 93 40
Denmark
45 70 13 15 15
Finland
358 (0) 10 855 2100
France
0825 010 700*
*0.125 /minute

Germany

01805 24 6333**
**0.14 /minute

Ireland
1890 924 204
Israel
972-3-9288-504/544
Italy
39 02 92 60 8484
Netherlands
31 (0) 20 547 2111
Spain
34 (91) 631 3300
Sweden
0200-88 22 55
Switzerland
0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008

Product specications and descriptions


in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
Printed in USA, May 20, 2003
5989-9605EN

You might also like