HF TRANSCEIVER

Prof. Yosef PINHASI

The transceiver presented in this article is designed to operate in the radio amateur
bands of the HF frequencies (3-30MHz). It was constructed on four printed circuit
boards:

Receiver and audio amplifier

Intermediate frequency (IF) modulator and product detector
Up-converter mixer and radio frequency (RF) power amplifier
Transmit / Receive (T-R) relay and RF low pass filter.

A block diagram of the transceiver is illustrated in Figure 1. In order to avoid mutual

electromagnetic interferences, the receiver and IF sections are separated from the RF
power stage. This requires transferring three signals between the two units; IF
double-side band (DSB) modulated signal, local oscillator and the RF antenna signal.
Much effort has been directed to keep the design simple and compact by utilizing
integrated circuits and direct couplings. Each of the four single-sided PCBs has its
own power supply, including a voltage regulation circuitry. In its present version, the
transceiver is operating in the 20m amateur band, covering 14.000-14.350MHz. The
receiver can detect AM, FM and SSB signals, while the transmitter operates in a DSB
mode.

RECEIVER
SA605
MPSH10
9

FM

AM

Quadrature

1
LNA

RF

455KHz

detector

LM380
VFO

AUDIO OUT

AF
3

14

Buffer

2N918

VFO

455KHz IF

CW/SSB

7404
Product detector

FREQUENCY
COUNTER

BFO

Buffer

Buffer

2N2222

BFXO
2N4416
455KHz

2N 918
BC149

2N2222
BFXO

MICROPHONE

LM741
MIC.

PA

IF
455KHz

Driver
Balanced mixer

MRF150
MRF150

2N3866

SA602

DSB
AF
Balanced modulator

MC1496

2N3553

AUXILARY
TONE
TONE
1KHz
2N3904

TRANSMITTER RF

455KHz IF
BALANCED MODULATOR & PRODUCT DETECTOR

Figure 1: Block diagram of the HF transceiver.

I.

THE RECEIVER

Figure 2 is the electronic scheme of the receiving module. The front-end of the
receiver consisted of a 4.7H inductor in series with a 27pF capacitor, constituting a
resonant circuit at 14.128MHz. The two diodes at the input protect from excessive
signals by clipping spikes and large amplitudes that may damage the receiver frontend. The series resonant filter it is followed by an impedance matching network

transferring the aerial 50 impedance into 4.5K input impedance of the SA605 RF
stage. The matching network is shown in Figure 3.a and its transmission
characteristics of the matching network are shown in Figure 3.b.

1N4148

0.1u

0.1u

455KHz

455KHz black IF
3
4
S

455KHz

5.1K

BFXO (from modulator)

+12V

270

470p

3
47K

0.1u

1
S

20
19
18
17
16
15
14
13
12
11

0.1u

270

470p

2N2222

1N4148

1K
CW / SSB

5.1K

10n
10p
10n
1
2
3
4
5
6
7
8
9
10

4.7K

1K

10n

40n

AM / FM

FM
AM

+12V

AM

2.3uH
24 turns T-50-6

1n

470pF
1N4148

1N4148

1N4148

1N4148

1n

455KHz black IF

27p
1

50p

0.577uH
12 turns T-50-6

4.7u
BNC

RF in (from T/R relay)

680
56pF

0.1u
22K

10n

510

20K

Audio (to audio amplifier)

SA605

50p

100K
BB109
120pF

50pF

100K

100K

RFC
1mH

+
6.2V
1n

15n

150p

2K

0.1u

0.1u

100u

0.1u

100K
10V
0.1u

0.47u

0.1u
47u

2N2222A
2

10n
VFO (to mixer and power amplif ier)

2.7K

220K

1K 100K

470

10n
1
10n

BNC

2N918
5.1K

100K

680K

Figure 2: The receiver and product detector.

2.3uH

Input

50 Ohm

24 turns T-50-6

56pF

4.5K

470pF

(a)
(b)
Figure 3: Front-end impedance matching network: a) scheme, b) power transmission.

The main receiving chain is based on the Philips SA605 mixer and IF system [1].
This integrated circuit (previously manufactured by Signetics with the number
NE605) is a super-heterodyne receiver composing of an internal balanced mixer,
local oscillator and intermediate frequency amplifiers. The 6.2V regulated supply
voltage required at leg 7 is achieved by employing a zener diode.

The local oscillator (L.O.) of the SA605 is based on a varactor-tuned variable

frequency oscillator (VFO). The L.O. frequency should be 455KHz below the
receiving frequency, i.e. 13.545-13.895MHz. In this Colpitts configuration, the
frequency is determined by the coil L3, the varactor CV and the two parallel capacitors
C3a and C3b, as shown in Figure 4.a. The oscillation frequency of the L.O. is
following the expression:
f LO (V ) =

C C
2 L3 CV (V ) + C3 + 1 2
C1 + C2

While using the BB109, I found out that the coil inductance should be L3=0.577 H
(12 turns on a T-50-6 iron powder toroid yellow core). The capacitor is
approximately C3=150pF made of a C3a=120pF capacitor in parallel with a C3b=50pF
trimmer (see Figure 4.a). In that case, the receiving frequency as a function of the
voltage introduced to the varactor is shown in Figure 4.b. Note that besides the main
14.000-14.350MHz band (455KHz above the L.O. frequency), also image
frequencies of 13.09-13.440MHz (455KHz below the L.O.) are expected to be
detected as a result of a super-heterodyne configuration.

1n

1n

C2=50p

L3=0.577uH

12 turns T-50-6

C1=50p

C3a

C3b

Cv
BB109

Vtune

(a)
(b)
`Figure 4: The VFO: a) Resonant circuit, b) Receiving frequency as a function of the
voltage in the 20m bands. The image frequencies are also shown.

The continuous local oscillator sine wave appearing in leg 3 is also transferred to the
up-conversion mixer in the transmitting unit of the transceiver, via a buffering 2N918
transistor in the receiver module followed by 2N2222A transistor (located in the
transmitting module).

Two standard 455KHz ceramic filters are used in the IF stage. The SA605 is
originally designed as an FM receiver; it includes a limiter and an FM quadrature
detector, as well as an RSSI (received signal strength indicator). When an FM signal
is received, the demodulated information is obtained at the unmuted audio output (leg
9). A black 455KHz standard IF transformer is used in the quadrature detection
system. Appropriate design of the RSSI filter, enables also detection of AM signals.
In that case the demodulated audio is obtained at the RSSI output (leg 7).
In order to detect CW or SSB transmissions, an external product detector is added.
Here, a switching two-diode detector was chosen, driven by a 2N2222 bipolar
transistor and an additional 455KHz black IF transformer. The detector, which in this
construction is part of the IF PCB, is connected to leg 14 (the input of the SA505
limiter), where the IF signal is obtained. The 455KHz beat frequency is generated by
a crystal oscillator (BFXO) in the IF board.
The audio amplifier is shown in Figure 5, including the 12V regulated power supply
of the whole receiver unit. The audio amplifier is composed of the LM380 producing
about 2W of RMS power over a 8 loudspeaker.

+12V
7812
1

0.1u
4.7K
MU TE

1
2
3

OUT

IN

4.7K

2N3906
Q1

10K

470u
6
LM380

1
2
3
4
5

PH ONES

SPEAKER

+
47u

+
0.1u

+
10u

0.1u

1000u
-

100K

4
5

1u

100K
100K

7
8

Audio (f rom receiver)

1n

Figure 5: Audio amplifier and receiver 12V power supply.

II.

THE IF BALANCED MODULATOR

The modulator section is based on the Motorola MC1496 balanced modulator

integrated circuit [2]. Audio signals from microphone, external auxiliary line or
internal tone generator are combined together by an operational amplifier TL071
(Equivalent to the 741). The microphone signal is fed to a single transistor preamplifier, enabling utilization of a standard 600 dynamic microphone or an
electrostatic. The transistor BC149 was chosen due to its low noise performance but
any other small-signal transistor will do well. The level of the microphone can be
adjusted by an external potentiometer, changing the modulation level. A tone of
1,000Hz is generated by a single 2N3904 (or equivalent) transistor phase-shift
oscillator, which can be switched on for transmitter testings. An internal on-board
trimmer is used for setting tone modulation level. The auxiliary input impedance is
47K, similar to that of standard audio inputs. The voltage gain of the TL071 audio
amplifier is 20, producing 300-500mVpeak to the signal input of the balanced
modulator.
The modulator generates a double-side band suppressed-carrier signal centered at an
intermediate, sub-carrier frequency of 455KHz. The sub-carrier is produced by the
beat frequency crystal oscillator (BFXO) based on the JFET 2N4416. The same
signal is used also for the product detection in the receiver. The oscillator, is buffered
by a two stage amplifier, consisting of the common emitter 2N918 followed by a
common collector 2N2222. This is required in order to feed the low impedance
carrier input of the balanced modulator with 60-100mVpeak of 455KHz continuous
wave. A trimmer is adjusted for best carrier null the output. In order to enable CW or
amplitude modulation transmission, violation of the carrier balance is created, by
connecting a 1K resistor from leg 4 to the ground.
The balanced modulator, 455KHz oscillator, audio preamplifier and tone generator
are all constructed on the same PCB including their 12V regulated power supply.

7812
180
1
2N 4416

820

2. 7K

1.2K

2N 2222A
1n

3.6K

OUT

IN

+
0. 1u

10u

15n

455KHz

2N 918
0.1u

47

RFC
47K
100K

1N4148

6.8V
1mH

100u

12K

240

1n
RCA JACK
0. 1u

1
10K

10K

5. 1K

MICR OPH ONE

14
13
12
11
10
9
8

1u
MC1496
1

150p

1. 5M
100K
BC149

1
2
3
4
5
6
7

2
3

47K

56n
50n

10K

180
2.7K

7
1

1M

47K

1K
1u

4
5

TL071
6

10K

3
1u
1
2
3

Tone

10K

10K

50K
100K

10K

100

100

1K

820

1u
+
10n

10n

10n
+

10n

2N 3904

10K

10K

10K

1K

10u +

5. 1K

+
10u

CW / AM
+
10u

1K

+
0.1u

10K

47K
50K
10m

+
0. 1u

10u

AUXILI AR Y

455KHz DSB (t o t rans mit ter)

1n

1n

Figure 6: Intermediate frequency balanced modulator.

III.

THE UP-CONVERSION MIXER AND POWER AMPLIFIER

The unique structure of the transmitter unit shown in Figure 7, is aimed at

simplification of the coupling between the mixer, driver and final amplifier. These
three stages are constructed on a single PCB, installed in a separated enclosure, to
minimize RF interferences to the sensitive receiver.
The up-conversion mixer is the well known SA602 double-balanced mixer and
oscillator [3]. A 6.2V zener diode is employed to regulate the voltage supplied to the
mixer. The double-side band, suppressed-carrier signal from the MC1496 balanced
modulator (in Figure 6), is fed to the oscillator input (leg 6) of the SA602 mixer. A
455KHz ceramic band pass filter is used to reduce inter-modulation products of the
sub-carrier before the up-conversion process. As mentioned before, the internal VFO
of the SA605 receiver (shown in Figure 2) serves also as the local oscillator of the
transmitter. The continuous sinusoidal wave of the VFO, shifted 455KHz from the
transmission carrier frequency is fed to the input of the mixer (leg 1). Two RF
suppressed carrier modulated signals are generated at the output ports of the balanced
mixer, legs 4 and 5, with a 180 phase difference between each other. This enables a
direct coupling to the subsequent push-pull driver.
The driver is based on high frequency bipolar junction transistors, the 2N3866
followed by the 2N3553. This stage is biased to operate in a class A mode, drawing a
quiescent current of 80-100mA from a 12V regulated power supply. The total power
dissipation at this stage is approximately 1W, requiring installation of heat sinks on
the 2N3553 transistors. The switch, operating the mixer and driver, also serves as the
PTT of the transmitter. The driver is coupled to the power amplifier section via a 3:1
transformer, reducing the impedance by a factor of 9 as explain in [4]. The primary
supplies the voltage to the collectors of the 2N3553, while the secondary applies the
bias to the gates of the MRF150 field effects transistors of the final amplifier. The
transformer is made of a 22AWG enameled wires wound through a BN-43-202
ferrite core, 3 bifilar windings for the primary and a single winding for the secondary.
Two MRF150 field effects transistors (FETs) serve in the final push-pull power stage.
The MRF150 transistor is an N-channel, enhancement-mode FET, designed primarily
for delivering 150W, with 45% efficiency at 50V. It is often used in broad-band
linear amplifiers operating in the HF band [5-8]. In the present design both gates are
biased from the same regulated 5V source. The positive bias is adjusted by a 10K
trimmer for a quiescent current draw of 200mA from the 50V power supply. In order
to avoid oscillations, two 1 are used, isolating the paralleling inductance, from the
gates as noted in [6-7]. The power transistors should be mounted on a proper heat
sink for efficient removal of the dissipated heat.

T / R Control (to T/R relay)

470

7812
1

0.1u

100u +
6.2V

RFC
390u

6.8K

220, 10W

OUT

IN

+
470

0.1u

10u

500mA

Driv er

5A

Power Amplif ier

0.1u

22V , 5W
1.2K

R ed

RCA J ACK
1

455KHz
1

1.8K

10n

2N 3866

8
7
6
5

2N 3553

1
2
3
4

220

10

0.1u

1.2K

220

15n
100p

100
15n

10
BN-43-202
100
1

10K

1: 3
1

10K

10 bifilar turns FT-50-43A

2
1

100
3:1
1.2K

MRF150
SA602

RF out (to T/R relay)

1
2

455KH z D SB (from modulator

Yellow

BN-43-7051

MRF150

BN C

10n

1.8K

1
2N 3866
10n

10K

1M

7805
IN

OUT

82
1

Bias

5A

1N4005

6.8K

0.1u
Green

10m , 63V

+
10n

0.1u

0.1u

10u

0.1u

0.1u

VFO (from receiver)

2N 3553

1n

(a)

(b)
Figure 7: The up-converter and power amplifier stage a) schematics, b) photo.

IV.

T/R relay and Filter

RF out (f rom transmitter)

BNC
1

7812
1
PHONEJ ACK
1
2
3

320n

ANTENNA

220p
2

4N26

4N26
2N3019

0.1u

10u

12turns T-68-6

1N914

1K

10

+
0.1u

320n
SO239

2N3019

668n

1
8t urns T-50-2

470

T / R indicator

5. 1K

OUT

IN

T/ R control (from transmitter)

22V , 5W

0.1u

1000u, 63V

1n

Filter calculation from

http://www.wa4dsy.net/filter/hp_lp_filter.html

220p

8t urns T-50-2

T/ R RELAY DPDT
4
3
5
8
6
7
1
2

RF in (to receiv er)

V.

References

1. A. K. Wong: "Reviewing key areas when designing with the SA605", Philips
Semiconductors application note AN1994 (November 2007)
2. R. Hejhall: "MC1496 Balanced Modulator", Motorola Semiconductors
application note AN531/D (January 2002)
3. "High sensitivity applications of low-power RF/IF integrated circuits", Philips
Semiconductors application note AN1993 (August 2007)
4. H. Granberg: "Broadband transformers and power combining techniques for
RF", Motorola Semiconductors application note AN749/D (January 2002)
5. H. Granberg: "MOSFET RF power in the kW level: An update", QST Part 1
(December 1982) and Part 2 (January 1983)
6. H. Granberg: "Get 600 Watts RF from four power FETs", Motorola
Semiconductors application note EB104 (1983)
7. H. Granberg: "Get 600 Watts RF from four power FETs", Motorola
Semiconductors application note EB104/D (1993)
8. T. Sowden: "Hombrew solid-state 600WHF amplifier", QST (June 2006)