DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2756GR

SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The PA2756GR is Dual N-channel MOS Field Effect

Transistor designed for switching applications.

5
1 : Source 1
2 : Gate 1
7, 8: Drain 1

FEATURES
Low on-state resistance
RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A)
Low Ciss: Ciss = 260 pF TYP.
Built-in G-S protection diode against ESD
Small and surface mount package (Power SOP8)

3 : Source 2
4 : Gate 2
5, 6: Drain 2

PART NUMBER

PACKAGE

PA2756GR

Power SOP8

6.0 0.3

4.4

0.8

+0.10
0.05

5.37 MAX.

0.15
0.05 MIN.

ORDERING INFORMATION

1.44

1.8 MAX.

0.5 0.2
0.10

1.27 0.78 MAX.

0.40

+0.10
0.05

0.12 M

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V)

VDSS

60

Gate to Source Voltage (VDS = 0 V)

VGSS

20

ID(DC)

4.0

ID(pulse)

16

PT1

1.6

PT2

2.0

Channel Temperature

Tch

150

Storage Temperature

Drain Current (DC)

Note1

Drain Current (pulse)

Note2

Total Power Dissipation (1 unit)

Note1

Total Power Dissipation (2 units)

Note1

Tstg

55 to +150

Single Avalanche Current

Note3

IAS

4.0

Single Avalanche Energy

Note3

EAS

1.6

mJ

EAR

1.6

mJ

Repetitive Avalanche Energy

Notes 1.
2.
3.
4.

Note4

EQUIVALENT CIRCUIT
Drain 1

Body
Diode Gate 2

Gate 1

Gate
Protection
Diode

Drain 2

Source 1

Gate
Protection
Diode

Body
Diode

Source 2

Mounted on ceramic substrate of 2000 mm2 x 2.2 mm

PW 10 s, Duty Cycle 1%
Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V
IAR 4.0 A, Tch 150C

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan

2005

 PA2756GR
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

10

Gate Leakage Current

IGSS

VGS = 18 V, VDS = 0 V

10

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.5

| yfs |

VDS = 10 V, ID = 2.0 A

2.0

RDS(on)1

VGS = 10 V, ID = 2.0 A

85

105

RDS(on)2

VGS = 4.0 V, ID = 2.0 A

106

150

Gate Cut-off Voltage

Forward Transfer Admittance

Note

Drain to Source On-state Resistance

Note

2.0

Input Capacitance

Ciss

VDS = 10 V

260

pF

Output Capacitance

Coss

VGS = 0 V

65

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

20

pF

Turn-on Delay Time

td(on)

VDD = 30 V, ID = 2.0 A

14

ns

tr

VGS = 10 V

ns

td(off)

RG = 10

80

ns

30

ns

Rise Time
Turn-off Delay Time
Fall Time

tf

Total Gate Charge

QG

VDD = 48 V

nC

Gate to Source Charge

QGS

VGS = 10 V

nC

QGD

ID = 4.0 A

1.5

nC

VF(S-D)

IF = 4.0 A, VGS = 0 V

0.9

Reverse Recovery Time

trr

IF = 4.0 A, VGS = 0 V

24

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/s

22

nC

Gate to Drain Charge

Body Diode Forward Voltage

Note

Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

50

VGS
RL

Wave Form

RG

PG.

VDD

VGS
0

VGS

10%

90%

VDD
VDS
90%

IAS

VDS

VDS

ID

Starting Tch

= 1 s
Duty Cycle 1%

TEST CIRCUIT 3 GATE CHARGE

PG.

50

10%

10%

Wave Form

VDD

D.U.T.
IG = 2 mA

90%

VDS

VGS
0

BVDSS

RL
VDD

Data Sheet G17407EJ1V0DS

td(on)

tr
ton

td(off)

tf
toff

 PA2756GR
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

120

2.8
PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

100
80
60
40
20

Mounted on ceramic
substrate of
2000 mm2 x 2.2 mm

2.4
2 units

1 unit

1.6
1.2
0.8
0.4
0

0
0

20

40

60

80

100 120 140 160

20

40

60

80

100 120 140 160

TA - Ambient Temperature - C

TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA

100
PW = 100 s

10

ID(DC)
1 ms

1
RDS(on) Limited
(at VGS = 10 V)

0.1

Power Dissipation Limited

Single pulse, 1unit
TA = 25C
Mounted on ceramic substrate

10 ms
100 ms

of 2000 mm x 2.2 mm

0.01
0.01

0.1

10

100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

ID(pulse)

Rth(ch-A) = 78.1C/W

100

10

0.1
100

Single pulse, 1unit

TA = 25C
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
1m

10 m

100 m

10

100

1000

PW - Pulse Width - s

Data Sheet G17407EJ1V0DS

 PA2756GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

100

20

VDS = 10 V
Pulsed

Pulsed
ID - Drain Current - A

ID - Drain Current - A

10
15

VGS = 10 V

10

4.0 V

TA = 40C
25C
75C
125C
150C

1
0.1
0.01
0.001
0.0001

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

1
0.5

-50 -25

25

50

| yfs | - Forward Transfer Admittance - S

1.5

0
75 100 125 150 175

10
VDS = 10 V
Pulsed
TA = 40C
25C
75C
125C
150C

0.1

0.01
0.01

0.1

200
Pulsed
180
160
140
VGS = 4.0 V

100
10 V

60
10

100

RDS(on) - Drain to Source On-state Resistance - m

RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

10

100

ID - Drain Current - A

Tch - Channel Temperature - C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

200
Pulsed

180
160
ID = 4.0 A
2.0 A
0.8 A

140
120
100
80
60
0

9 10 11 12

VGS - Gate to Source Voltage - V

ID - Drain Current A

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

0.1

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

2.5

80

VGS - Gate to Source Voltage - V

VDS = 10 V
ID = 1 mA

120

VDS - Drain to Source Voltage - V

3
VGS(off) - Gate Cut-off Voltage - V

Data Sheet G17407EJ1V0DS

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

200

1000

ID = 2.0 A
Pulsed

180
160
140

Ciss, Coss, Crss - Capacitance - pF

VGS = 4.0 V

120
100
10 V

80
60
40

Ciss
100
Coss

10

Crss
VGS = 0 V
f = 1 MHz

20
1

0
-50 -25

25

50

0.1

75 100 125 150 175

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

60

VDD = 30 V
VGS = 10 V
RG = 10

VDS - Drain to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

100

VDS - Drain to Source Voltage - V

Tch - Channel Temperature - C

100
td(off)
tf
td(on)

10

tr

12
ID = 4.0 A
VDD = 48 V
30 V
12 V

50
40

10
8

30

6
VGS

20
10

4
2

VDS

1
0.1

10

0
0

100

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

100

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT
1000
trr - Reverse Recovery Time - ns

Pulsed

10

QG - Gate Charge - nC

ID - Drain Current - A

IF - Diode Forward Current - A

10

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - m

PA2756GR

VGS = 10 V
4.0 V

0V

0.1

VGS = 0 V
di/dt = 100 A/s
100

10

0.01
0

0.5

1.5

0.1

10

100

IF - Diode Forward Current - A

VF(S-D) - Source to Drain Voltage - V

Data Sheet G17407EJ1V0DS

 PA2756GR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR
120
Energy Derating Factor - %

IAS - Single Avalanche Current - A

100

10
IAS = 4.0 A
EAS = 1.6 mJ
1

VDD = 30 V
RG = 25
VGS = 200 V
Starting Tch = 25C

80
60
40
20

0.1

0
10

100

1m

10 m

25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

L - Inductive Load - H

VDD = 30 V
RG = 25
VGS = 200 V
IAS 4.0 A

100

Data Sheet G17407EJ1V0DS

 PA2756GR

The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1