APM4546J: Features Pin Description

APM4546J
Dual Enhancement Mode MOSFET (N-and P-Channel)
Pin Description
Features
N-Channel
30V/8A,
RDS(ON) =20m (typ.) @ VGS = 10V
RDS(ON) =27m (typ.) @ VGS = 4.5V
P-Channel
Top View of PDIP 8
-30V/-6A,
RDS(ON) =38m (typ.) @ VGS =-10V
RDS(ON) =46m (typ.) @ VGS =-4.5V
(8)
D1
(3)
S2
(7)
D1
Super High Dense Cell Design

Reliable and Rugged
(4)
G2
Lead Free Available (RoHS Compliant)

(2)
G1
Applications
S1
(1)
Power Management in Notebook Computer,

Portable Equipment and Battery Powered
D2
(5)
D2
(6)
N-Channel MOSFET P-Channel MOSFET
Systems
Ordering and Marking Information

Package Code
J : PDIP-8
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4546
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4546 J :
APM4546
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2006
www.anpec.com.tw
APM4546J
Absolute Maximum Ratings
Symbol
(TA = 25C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
20
20
-6
30
-20
-2
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
RJA*
VGS=10V (N)
VGS=-10V (P)
V
A
A
150
-55 to 150
TA=25C
2.5
TA=100C
Thermal Resistance-Junction to Ambient
Unit
W
C/W
50
Note:
*Surface Mounted on 1in pad area, t 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25C unless otherwise noted)
APM4546J
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250A
N-Ch
30
VGS=0V, IDS=-250A
P-Ch
-30
VDS=24V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
TJ=85C
VDS=-24V, VGS=0V
TJ=85C
VGS(th) Gate Threshold Voltage

IGSS
RDS(ON)
Gate Leakage Current
Drain-Source On-State
Resistance

Rev. B.3 - Jan., 2006
V
1
N-Ch
30
-1
P-Ch
-30
VDS=VGS, IDS=250A
N-Ch
0.8
1.5
VDS=VGS, IDS=-250A
P-Ch
-0.8
-1.5
-2
VGS=20V, VDS=0V
N-Ch
100
VGS=20V, VDS=0V
P-Ch
100
VGS=10V, IDS=8A
N-Ch
20
26
VGS=-10V, IDS=-6A
P-Ch
38
50
VGS=4.5V, IDS=5A
N-Ch
27
36
VGS=-4.5V, IDS=-4A
P-Ch
46
60
nA
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APM4546J
Electrical Characteristics (Cont.)
Symbol
Parameter
(T A = 25C unless otherwise noted)

APM4546J
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
VSD
Diode Forward Voltage
Dynamic Characteristics
N-Ch
0.8
1.3
ISD=-2A, VGS =0V
P-Ch
-0.8
-1.3
N-Ch
P-Ch
N-Channel
VGS =0V,
VDS=15V,
Frequency=1.0MHz
N-Ch
790
P-Ch
900
N-Ch
130
P-Channel
VGS =0V,
VDS=-15V,
Frequency=1.0MHz
P-Ch
140
N-Ch
80
P-Ch
75
N-Ch
14
P-Ch
14
N-Ch
17
P-Ch
12
17
N-Ch
27
36
P-Ch
42
56
N-Ch
12
P-Ch
19
26
N-Ch
10
P-Ch
N-Channel
VDS=15V, VGS=10V,
IDS=8A
N-Ch
18.6
25
P-Ch
18.8
25
N-Ch
1.8
P-Channel
VDS=-15V, VGS=-10V,
IDS=-6A
P-Ch
2.4
N-Ch
3.6
P-Ch
1.6
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
ISD=2A, VGS =0V
Turn-off Delay Time
VGS =0V,VDS=0V,F=1MHz
N-Channel
VDD=15V, RL =15,
IDS=1A, VGEN =10V,
RG=6
P-Channel
VDD=-15V, RL =15,
IDS=-1A, VGEN =-10V,
RG=6
Tf
Turn-off Fall Time
Q rr
N-Channel
I =8A, dISD/dt =100A/s
Reverse Recovery Charge SD
P-Channel
ISD=-6A, dISD/dt =100A/s
pF
ns
nC
Gate Charge Characteristics b

Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
nC
Notes:
a : Pulse test ; pulse width300s, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
Rev. B.3 - Jan., 2006
www.anpec.com.tw
APM4546J
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
10
3.0
ID - Drain Current (A)
Ptot - Power (W)
2.5
2.0
1.5
1.0
0.5
0.0
TA=25 C
0
20
40
60
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
Lim
it
1ms
Rd
s(o
n)
20
Tj - Junction Temperature (C)
10ms
1
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
100
10
TA=25 C,VG=10V
0.1
10
Rev. B.3 - Jan., 2006
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Mounted on 1in pad

o
RJA : 50 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
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APM4546J
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
30
40
VGS= 4, 5, 6, 7, 8, 9, 10V
36
RDS(ON) - On - Resistance (m)
25
3V
20
15
2.5V
10
32
VGS=4.5V
28
24
VGS=10V
20
16
2V
12
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
15
20
25
Transfer Characteristics
Gate Threshold Voltage

1.8
30
IDS=250A
1.6
Normalized Threshold Voltage
25
10
VDS - Drain-Source Voltage (V)
30
20
15
Tj=125 C
10
Tj=-55 C
Tj=25 C
5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
VGS - Gate - Source Voltage (V)

Rev. B.3 - Jan., 2006
25
50
75 100 125 150
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APM4546J
N-Channel
Source-Drain Diode Forward

30
2.0
VGS = 10V
IDS = 8A
10
1.6
IS - Source Current (A)
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
Tj=150 C
Tj=25 C
1
0.4
o
RON@Tj=25 C: 20m
0.2
-50 -25
25
50
0.1
0.0
75 100 125 150
0.9
1.2
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.5
10
Frequency=1MHz
VDS=15V
IDS =8A
VGS - Gate - source Voltage (V)
1200
C - Capacitance (pF)
0.6
1400
1000
Ciss
800
600
400
200
0
0.3
Coss
Crss
10
15
20
Rev. B.3 - Jan., 2006
25
12
16
20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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APM4546J
P-Channel
Power Dissipation
Drain Current
3.0
7
6
5
-ID - Drain Current (A)
Ptot - Power (W)
2.5
2.0
1.5
1.0
4
3
2
0.5
1
o
0.0
TA=25 C
0
20
40
60
80 100 120 140 160
20
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
10
Rd
s(o
n)
Lim
it
100
1ms
10ms
1
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
TA=25 C,VG=-10V
0.1
10
Rev. B.3 - Jan., 2006
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Mounted on 1in pad

o
RJA : 50 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
www.anpec.com.tw
APM4546J
P-Channel
Output Characteristics
20
80
VGS= -4,-5,-6,-7,-8,-9,-10V
18
RDS(ON) - On - Resistance (m)
-3V
16
14
12
10
8
-2.5V
6
4
2
0.5
1.0
1.5
2.0
2.5
VGS= -4.5V
50
VGS= -10V
40
30
20
10
3.0
12
16
Transfer Characteristics
Gate Threshold Voltage
20
1.8
20
IDS= -250
18
Normalized Threshold Voltage
1.6
16
60
-2V
0
0.0
14
12
10
o
Tj=125 C
8
6
Tj=25 C
Tj=-55 C
2
0
70
Rev. B.3 - Jan., 2006
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
-VGS - Gate - Source Voltage (V)
1.4
25
50
75 100 125 150
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APM4546J
P-Channel
Source-Drain Diode Forward
1.8
20
VGS = -10V
IDS = -6A
10
o
Tj=150 C
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
Tj=25 C
0.6
o
RON@Tj=25 C: 38m
0.4
-50 -25
25
50
0.1
-0.5
75 100 125 150
0.5
1.0
1.5
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
2.0
10
1400
VDS= -15V
Frequency=1MHz
-VGS - Gate - source Voltage (V)
1200
C - Capacitance (pF)
0.0
1000
Ciss
800
600
400
200
Coss
ID= -6A
8
Crss
0
10
15
20
25
Rev. B.3 - Jan., 2006
12
16
20
QG - Gate Charge (nC)
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APM4546J
Packaging Information
PDIP-8 pin ( Reference JEDEC Registration MS-001)
E1
A2
1
E3
A1
L
e2
e1
e3
Dim
A
A1
A2
D
e1
e2
e3
E
E1
E3
L
1
Millimeters
Min.
Max.
5.33
0.38
2.92
9.02
Min.
3.68
10.16
0.015
0.115
0.355
0.56
1.78
0.014
0.045
2.54 BSC
0.36
1.14
6.10
0.145
0.400
0.022
0.070
0.300 BSC
7.11
10.92
3.81
2.92
Max.
0.210
0.100 BSC
7.62 BSC
15 REF

Rev. B.3 - Jan., 2006
Inches
0.240
0.280
0.430
0.150
0.115
15 REF
10
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APM4546J
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 C to Peak
Time
Classification Reflow Profiles

Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
217C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6C/second max.
6C/second max.
6
minutes
max.
8 minutes max.
Time 25C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.

Rev. B.3 - Jan., 2006
11
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APM4546J
Classification Reflow Profiles (Cont.)
Table 1. SnPb Entectic Process Package Peak Reflow Temperature s
3
3
Package Thickness
Volume mm
Volume mm
<350
350
<2.5 mm
240 +0/-5C
225 +0/-5C
2.5 mm
225 +0/-5C
225 +0/-5C
Table 2. Pb-free Process Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0C*
260 +0C*
260 +0C*
1.6 mm 2.5 mm
260 +0C*
250 +0C*
245 +0C*
2.5 mm
250 +0C*
245 +0C*
245 +0C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0C.
For example 260C+0C) at the rated MSL level.
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245C,5 SEC
1000 Hrs Bias @ 125C
168 Hrs, 100% RH, 121C
-65C ~ 150C, 200 Cycles
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Rev. B.3 - Jan., 2006
12
www.anpec.com.tw

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APM4546J

Dual Enhancement Mode MOSFET (N-and P-Channel)

Top View of PDIP 8

Super High Dense Cell Design

Lead Free Available (RoHS Compliant)

Power Management in Notebook Computer,

N-Channel MOSFET P-Channel MOSFET

Ordering and Marking Information

XXXXX - Date Code

(TA = 25C unless otherwise noted)

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance-Junction to Ambient

(TA = 25C unless otherwise noted)

VGS(th) Gate Threshold Voltage

Gate Leakage Current

Copyright ANPEC Electronics Corp.

(T A = 25C unless otherwise noted)

Diode Forward Voltage

ISD=-2A, VGS =0V

Turn-on Delay Time

Turn-on Rise Time

ISD=2A, VGS =0V

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics b

Total Gate Charge

ID - Drain Current (A)

Ptot - Power (W)

80 100 120 140 160

80 100 120 140 160

Safe Operation Area

Thermal Transient Impedance

ID - Drain Current (A)

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Rev. B.3 - Jan., 2006

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Mounted on 1in pad

Square Wave Pulse Duration (sec)

RDS(ON) - On - Resistance (m)

ID - Drain Current (A)

ID - Drain Current (A)

Gate Threshold Voltage

Normalized Threshold Voltage

ID - Drain Current (A)

VDS - Drain-Source Voltage (V)

VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.

75 100 125 150

Tj - Junction Temperature (C)

Source-Drain Diode Forward

IS - Source Current (A)

75 100 125 150

VSD - Source - Drain Voltage (V)

VGS - Gate - source Voltage (V)

Tj - Junction Temperature (C)

Rev. B.3 - Jan., 2006

QG - Gate Charge (nC)