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Pin Description
Features
N-Channel
30V/8A,
RDS(ON) =20m (typ.) @ VGS = 10V
RDS(ON) =27m (typ.) @ VGS = 4.5V
P-Channel
-30V/-6A,
RDS(ON) =38m (typ.) @ VGS =-10V
RDS(ON) =46m (typ.) @ VGS =-4.5V
(8)
D1
(3)
S2
(7)
D1
Applications
S1
(1)
D2
(5)
D2
(6)
Systems
APM4546
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4546 J :
APM4546
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2006
www.anpec.com.tw
APM4546J
Absolute Maximum Ratings
Symbol
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
20
20
-6
30
-20
-2
ID*
IDM*
IS*
TJ
TSTG
PD*
Power Dissipation
RJA*
VGS=10V (N)
VGS=-10V (P)
V
A
A
150
-55 to 150
TA=25C
2.5
TA=100C
Unit
W
C/W
50
Note:
*Surface Mounted on 1in pad area, t 10sec.
2
Electrical Characteristics
Symbol
Parameter
APM4546J
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250A
N-Ch
30
VGS=0V, IDS=-250A
P-Ch
-30
VDS=24V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
TJ=85C
VDS=-24V, VGS=0V
TJ=85C
RDS(ON)
Drain-Source On-State
Resistance
V
1
N-Ch
30
-1
P-Ch
-30
VDS=VGS, IDS=250A
N-Ch
0.8
1.5
VDS=VGS, IDS=-250A
P-Ch
-0.8
-1.5
-2
VGS=20V, VDS=0V
N-Ch
100
VGS=20V, VDS=0V
P-Ch
100
VGS=10V, IDS=8A
N-Ch
20
26
VGS=-10V, IDS=-6A
P-Ch
38
50
VGS=4.5V, IDS=5A
N-Ch
27
36
VGS=-4.5V, IDS=-4A
P-Ch
46
60
nA
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APM4546J
Electrical Characteristics (Cont.)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
VSD
Dynamic Characteristics
N-Ch
0.8
1.3
P-Ch
-0.8
-1.3
N-Ch
P-Ch
N-Channel
VGS =0V,
VDS=15V,
Frequency=1.0MHz
N-Ch
790
P-Ch
900
N-Ch
130
P-Channel
VGS =0V,
VDS=-15V,
Frequency=1.0MHz
P-Ch
140
N-Ch
80
P-Ch
75
N-Ch
14
P-Ch
14
N-Ch
17
P-Ch
12
17
N-Ch
27
36
P-Ch
42
56
N-Ch
12
P-Ch
19
26
N-Ch
10
P-Ch
N-Channel
VDS=15V, VGS=10V,
IDS=8A
N-Ch
18.6
25
P-Ch
18.8
25
N-Ch
1.8
P-Channel
VDS=-15V, VGS=-10V,
IDS=-6A
P-Ch
2.4
N-Ch
3.6
P-Ch
1.6
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON)
Tr
td(OFF)
VGS =0V,VDS=0V,F=1MHz
N-Channel
VDD=15V, RL =15,
IDS=1A, VGEN =10V,
RG=6
P-Channel
VDD=-15V, RL =15,
IDS=-1A, VGEN =-10V,
RG=6
Tf
Q rr
N-Channel
I =8A, dISD/dt =100A/s
Reverse Recovery Charge SD
P-Channel
ISD=-6A, dISD/dt =100A/s
pF
ns
nC
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
nC
Notes:
a : Pulse test ; pulse width300s, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2006
www.anpec.com.tw
APM4546J
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TA=25 C
0
20
40
60
40
60
Lim
it
1ms
Rd
s(o
n)
20
10ms
1
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
100
10
TA=25 C,VG=10V
0.1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
1E-3
0.01
0.1
10 30
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APM4546J
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
30
40
VGS= 4, 5, 6, 7, 8, 9, 10V
36
25
3V
20
15
2.5V
10
32
VGS=4.5V
28
24
VGS=10V
20
16
2V
12
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
15
20
25
Transfer Characteristics
30
IDS=250A
1.6
25
10
30
20
15
Tj=125 C
10
Tj=-55 C
Tj=25 C
5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
25
50
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APM4546J
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
2.0
VGS = 10V
IDS = 8A
10
1.6
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
Tj=150 C
Tj=25 C
1
0.4
o
RON@Tj=25 C: 20m
0.2
-50 -25
25
50
0.1
0.0
0.9
1.2
Capacitance
Gate Charge
1.5
10
Frequency=1MHz
VDS=15V
IDS =8A
1200
C - Capacitance (pF)
0.6
1400
1000
Ciss
800
600
400
200
0
0.3
Coss
Crss
10
15
20
25
12
16
20
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APM4546J
Typical Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
3.0
7
6
5
2.5
2.0
1.5
1.0
4
3
2
0.5
1
o
0.0
TA=25 C
0
20
40
60
20
40
60
10
Rd
s(o
n)
Lim
it
100
1ms
10ms
1
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
TA=25 C,VG=-10V
0.1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
1E-3
0.01
0.1
10 30
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APM4546J
Typical Characteristics (Cont.)
P-Channel
Output Characteristics
20
Drain-Source On Resistance
80
VGS= -4,-5,-6,-7,-8,-9,-10V
18
-3V
16
14
12
10
8
-2.5V
6
4
2
0.5
1.0
1.5
2.0
2.5
VGS= -4.5V
50
VGS= -10V
40
30
20
10
3.0
12
16
Transfer Characteristics
20
1.8
20
IDS= -250
18
1.6
16
60
-2V
0
0.0
14
12
10
o
Tj=125 C
8
6
Tj=25 C
Tj=-55 C
2
0
70
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
1.4
25
50
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APM4546J
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
1.8
20
VGS = -10V
IDS = -6A
10
o
Tj=150 C
1.4
Normalized On Resistance
1.6
1.2
1.0
0.8
Tj=25 C
0.6
o
RON@Tj=25 C: 38m
0.4
-50 -25
25
50
0.1
-0.5
0.5
1.0
1.5
Capacitance
Gate Charge
2.0
10
1400
VDS= -15V
Frequency=1MHz
1200
C - Capacitance (pF)
0.0
1000
Ciss
800
600
400
200
Coss
ID= -6A
8
Crss
0
10
15
20
25
12
16
20
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APM4546J
Packaging Information
PDIP-8 pin ( Reference JEDEC Registration MS-001)
E1
A2
1
E3
A1
L
e2
e1
e3
Dim
A
A1
A2
D
e1
e2
e3
E
E1
E3
L
1
Millimeters
Min.
Max.
5.33
0.38
2.92
9.02
Min.
3.68
10.16
0.015
0.115
0.355
0.56
1.78
0.014
0.045
2.54 BSC
0.36
1.14
6.10
0.145
0.400
0.022
0.070
0.300 BSC
7.11
10.92
3.81
2.92
Max.
0.210
0.100 BSC
7.62 BSC
15 REF
Inches
0.240
0.280
0.430
0.150
0.115
15 REF
10
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APM4546J
Physical Specifications
Terminal Material
Lead Solderability
Reflow Condition
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 C to Peak
Time
Pb-Free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
217C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6C/second max.
6C/second max.
6
minutes
max.
8 minutes max.
Time 25C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
11
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APM4546J
Classification Reflow Profiles (Cont.)
Table 1. SnPb Entectic Process Package Peak Reflow Temperature s
3
3
Package Thickness
Volume mm
Volume mm
<350
350
<2.5 mm
240 +0/-5C
225 +0/-5C
2.5 mm
225 +0/-5C
225 +0/-5C
Table 2. Pb-free Process Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0C*
260 +0C*
260 +0C*
1.6 mm 2.5 mm
260 +0C*
250 +0C*
245 +0C*
2.5 mm
250 +0C*
245 +0C*
245 +0C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0C.
For example 260C+0C) at the rated MSL level.
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245C,5 SEC
1000 Hrs Bias @ 125C
168 Hrs, 100% RH, 121C
-65C ~ 150C, 200 Cycles
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
12
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