Professional Documents
Culture Documents
2SK2485
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
(in millimeter)
20.00.2
6.0
VDSS
900
VGSS
30
ID (DC)
6.0
2.20.2
ID (pulse)
12
5.45
PT1
100
PT2
3.0
Channel Temperature
Tch
150
Storage Temperature
Tstg
IAS
6.0
EAS
42.3
mJ
19 MIN.
3.00.2
1.00.2
5.45
0.60.1
2.80.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
55 to +150 C
Drain
PW 10 s, Duty Cycle 1 %
4.7 MAX.
1.5
3.20.2
7.0
Low On-Resistance
15.7 MAX.
4.50.2
1.0
FEATURES
Body
Diode
Gate
Source
1995
2SK2485
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
RDS (on)
VGS (off)
2.5
| yfs |
2.0
TYP.
2.2
MAX.
UNIT
2.8
TEST CONDITIONS
VGS = 10 V, ID = 3.0 A
3.5
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 3.0 A
VDS = VDSS, VGS = 0
IDSS
100
IGSS
100
nA
VGS = 30 V, VDS = 0
Input Capacitance
Ciss
1200
pF
VDS = 10 V
Output Capacitance
Coss
170
pF
VGS = 0
Crss
30
pF
f = 1 MHz
td (on)
20
ns
ID = 3.0 A
Rise Time
tr
10
ns
VGS = 10 V
td (off)
70
ns
VDD = 150 V
Fall Time
tf
15
ns
RG = 10 RL = 50
QG
40
nC
ID = 6.0 A
QGS
nC
VDD = 450 V
QGD
17
nC
VGS = 10 V
VF (S-D)
1.0
trr
740
ns
IF = 6.0 A, VGS = 0
Qrr
4.0
di/dt = 50 A/s
IF = 6.0 A, VGS = 0
50
VGS
RL
RG
RG = 10
PG.
VDD
VGS
Wave Form
VGS (on)
10 %
90 %
VDD
ID
90 %
90 %
BVDSS
IAS
ID
ID
VGS
0
VDS
D
Wave Form
VDD
10 %
10 %
td (on)
tr
ton
Starting Tch
td (off)
tf
toff
t = 1 us
Duty Cycle 1 %
50
RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2SK2485
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
100
80
60
40
20
20
40
60
80
120
100
80
60
40
20
0
20
40
60
80
TC - Case Temperature - C
TC - Case Temperature - C
100
10
ID(pulse)
10
10
ed
Lim
Po
S(
RD
er
Di
10
ss
ipa
8
VGS = 20 V
10 V
8V
6V
Lim
ite
TC = 25 C
Single Pulse
1
tio
0.1
it
n)
ID - Drain Current - A
ID - Drain Current - A
Pulsed
PW
10
100
1 000
12
16
ID - Drain Current - A
100
10
Pulsed
TA = 25 C
25 C
75 C
125 C
1.0
0.1
10
15
2SK2485
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
Rth(ch-a) = 41.7(C/W)
10
Rth(ch-c) = 1.25(C/W)
1
0.1
0.01
0.001
10
Single Pulse
Tc = 25 C
100
1m
10 m
100 m
10
100
1 000
100
VDS = 20 V
Pulsed
10
TA = 25 C
25 C
75 C
125 C
1.0
0.1
0.01
0.1
1.0
Pulsed
6
ID = 6 A
3A
1.5 A
12
Pulsed
VGS = 10 V
6
ID - Drain Current - A
0.1
1.0
ID - Drain Current - A
10
10
PW - Pulse Width - s
VDS = 10 V
ID = 1 mA
2
50
50
100
150
Pulsed
100
2SK2485
1
50
50
100
10
1
VGS = 10 V
VGS = 0 V
0.1
VGS = 10 V
ID = 3 A
150
SWITCHING CHARACTERISTICS
1 000
VGS = 0
f = 1 MHz
10 000
Ciss
1 000
Coss
100
Crss
10
0.1
10
100
tr
tf
100
td(off)
td(on)
10
1.0
0.1
ID - Drain Current - A
di/dt = 50 A/s
VGS = 0
1 000
100
1.0
0.1
1.0
10
ID - Drain Current - A
VDD = 150 V
VGS = 10 V
RG = 10
10
100
1.0
10 000
1.5
1.0
0.5
100
ID = 6 A
14
12
VDD = 450 V
300 V
150 V
10
8
6
4
2
0
10
20
30
40
Qg - Gate Charge - nC
2SK2485
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10
16
IAS = 6.0 A
EAS
=4
2.3
mJ
1.0
VDD = 150 V
VGS = 20 V 0
0.1 RG = 25
100
1m
VDD = 150 V
RG = 25
VGS = 20 V 0
IAS 6.0A
14
12
10
8
6
4
2
10 m
L - Inductive Load - H
100
100 m
0
25
50
75
100
125
150
2SK2485
REFERENCE
Document Name
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
TEA-1034
TEA-1035
TEA-1037
2SK2485
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on
a customer designated quality assurance program for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11