Tutorial Sheet Part-2 (BJT amplifier)

1. (a) Show that the exact expression for h fe in terms of CB h-parameters is

h fb (1

h fe

(1

h rb )

h fb )(1

h ib h ob

h rb )

h ob h ib

(b) From the exact formula show that the approximate expression of h fe

h fe

h fb
1

h fb

2. (a) Show that the exact expression for h fb in terms of CE h-parameters is

h fb

h fe (1
(1

h re )

h fe )(1

h ie h oe

h re )

h oe h ie

(b) From the exact formula show that the approximate expression of h fb

h fb

h fe
1

h fe

3. Prove the following approximate conversion formulas

(a) h ic

h ie

(b) h rc

(c) h fc

(1

h fe )

4. For the circuit shown in Fig. 1 find the C E

E as the new emitter terminal.

(d) h oc

h oe

h-parameters of the configuration taking

Fig.1
Ans. h ie'

P.Sham

(1
h ie

h fe ) R e
h oe R e

h re

h re
1

h oe R e
h oe R e

Page 1

, h 'fe

h fe
1

h oe R e
h oe R e

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Tutorial Sheet Part-2 (BJT amplifier)

and h oe'

h oe
1

h oe R e

5. Given a single-stage transistor with the h parameters specified in Table-1, calculate

current gain A I , voltage gain A v , voltage gain with source resistance, input resistance
R i and output resistance R o for CB, CE and CC configuration with R s
R L 3K
Table-1

.
Ans:

6. (a) Draw the equivalent circuit for the CE and CC configuration subject to the
restriction that R L 0 . Show that input impedances of the two circuits are identical.

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Tutorial Sheet Part-2 (BJT amplifier)

(b) Draw the circuits for the CE and CC configurations subject to the restriction that
the input is open circuited. Show that the output impedances of the two circuits are
identical.
7. For any single transistor amplifier prove that R i

hi
1

h r Av

8. For the circuit shown in Fig. 2, find out the expression of current gain A I , output
resistance R o , voltage gain A v and input resistance R i in terms of h ie and h fe . Neglect
the effect of h re and h oe .

Fig. 2
Ans:

P.Sham

AI

h fe

, Ro

, AV

h fe R L
h ie

(1

h fe ) R e

Page 3

RL
Re

Ri

h ie

(1

h fe ) R e

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Tutorial Sheet Part-2 (BJT amplifier)

9. A table ( Table-2) is shown. Considering approximate h-parameter CE model and with
the assumption that h oe ( R e

RL )

CE

0 .1 ,

CE with Re

h fe

AI

prove all the expressions given in the Table-2.

Table-2

h fe

CC
1

CB
h fe

h fe

1
h ie

h ie

Ri

(1

h fe ) R e

h ie

(1

h fe ) R L

h ie
1

h fe R L

AV

RL

Re

h ie
Ro

Rs
1

h fe

h fe

h ie

h fe R L

Ri

h ie

h ie
h fe

10. The amplifier shown in Fig. 3 uses a transistor whose h parameters are h fe
h ie

4k

(c) A v
RL

4k

Ans: A I

. Neglect the effect of other h-parameters. Calculate (a) A I

Vo
Vi

, (d) A vs

Vo
Vs

(e) R o .

Assume R 1

90 k

, R2

10 k

Io
Ii

200

(b) R i

, Rs

5k

and
Vi
Ii

,
,

and all the capacitors are having infinite capacitance.

138 . 46 , R i

2 . 77 k

, Av

199 . 9 , A vs

71 . 28

, Ro =

Hints: The biasing resistances come parallel to the input terminal of the h-parameter
representation

Fig. 3

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Tutorial Sheet Part-2 (BJT amplifier)

11. The amplifier shown in Fig. 4 uses a transistor whose h parameters are h fe
h ie

Ri

Vb
Ib

, (c) R i/

Vb
I1

, (d) A i/

I2
I1

Vo

(e) A v

Vb

, (f) A vs

Vo
Vs

and

I2

. Neglect the effect of other h-parameters. Calculate (a) A I

1 . 1k

50

(b)

Ib

(g) R o . Assume all the

capacitors are having infinite capacitance

Fig. 4
Ans.: . (a) A I
Av

432 . 9 ,

(b) R i

47 . 62

(f) A vs

13 . 63

(g) R o

, (c) R i/

1 . 1k

4 . 47 k

325

10

R2

10 k

AI

Io
Ii

Ans: A I

P.Sham

h oe

10

and R e

14 . 09

(e)

12. The circuit as shown in Fig. 5, the h-parameters are h ie

h re

, (d) A i/

2 . 1k

, h fe

100

, .

. The circuit resistances are R s 2 k , R 1 90 k ,

. The capacitors are having infinite capacitance. Compute

A /V

1k

, A v , A vs and R i .
7 . 99 , A v

3 . 87

, A vs

3 . 11

, Ri

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8 . 25 k

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Tutorial Sheet Part-2 (BJT amplifier)

Fig. 5

13. A BJT biasing circuit is in the Fig.6. (a) Find the Q-point collector-emitter voltage
and collector current. (b) Find the current stability factor S , (c) Find the voltage stability
factor S and (d) the
stability factor S. Given that active region base-emitter bias
voltage VBE = 0.7 V, = 50, ICO = 210-3 nA, R1 = 100 Kohms, R2 =10Kohms, RE =
1Kohms, RC = 5Kohms and VCC = 20 V.

Fig. 6
Ans: (a) V CEQ 14 . 0493 V
, (d) S=3.2810-6 A

I CQ

0.98mA (b) S = 8.56, (c) S=-8.3210-4 A/V

14. Find the current stability factor for the circuit shown in Fig. 7.
Ans.

IC
I CO

(1
(1
( Rb

P.Sham

)
Re

Re )

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Tutorial Sheet Part-2 (BJT amplifier)

Fig. 7
15. For the self bias circuit shown in Fig. 6, R E
R1 R 2
R1

R2

/ RE

1 . 65

4 .7 K ,

R1 R 2
R1

R2

7 . 75 K

and

. The collector supply voltage and R C are adjusted to establish a

collector current of 1.5mA at 25oC. Determine the variation of I C in the range of -65oC
to +175oC when silicon transistor are having relevant parameters as shown in the Table3.
Table-3
-65

T, o C

1.95 10
25
0.78

I CO , nA

V BE , V

Ans. I C ( 175 o C )

1 . 694 mA

, I C ( 65 o C )

+25
1.0

+175
33,000

55
0.60

100
0.225

1 . 3815 mA

16. The transistor used in the circuit shown in Fig.6 may have any value of
between
o
36 and 90 at a room temperature of 25 C. The current I oc is negligibly small at the room
temperature. Find R E , R 1 and R 2 subject to the following specifications: R C 4 k ,
V cc
20 V ; the nominal bias point is to be at V CE
2 mA and I c should be in
10 V , I C
the range of 1,75mA to 2.25mA as
varies from 36 to 90.
Ans. R E

P.Sham

1k

, R1

117 k

and R 2

24 . 2 k

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