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TO-92
Value
Units
VCEO
Collector-Emitter Voltage
Parameter
30
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
10
IC
Collector Current
TJ, TSTG
- Continuous
1.2
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Parameter
Conditions
Min.
Max
Units
Off Characteristics
V(BR)CEO
IC = 2.0mA, IB = 0
30
V(BR)CBO
IC = 10A, IE = 0
40
V(BR)EBO
IE = 100nA, IC = 0
10
ICBO
VCB = 30V, IE = 0
100
nA
On Characteristics *
hFE
DC Current Gain
VCE(sat)
IC = 100mA, IB = 0.1mA
VBE(on)
Base-Emitter On Voltage
1.4
Thermal Characteristics T
Symbol
30,000
Parameter
Value
Units
PD
625
5.0
mW
mW/C
RJC
83.3
C/W
RJA
200
C/W
BC517 Rev. A
www.fairchildsemi.com
January 2005
Mechanical Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
(0.25)
+0.10
0.38 0.05
0.38 0.05
0.20
3.86MAX
3.60
1.02 0.10
+0.10
1.27TYP
[1.27 0.20]
(R2.29)
Dimensions in Millimeters
2
BC517 Rev. A
www.fairchildsemi.com
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